阵列波导光栅设计原及优化

本文从波导光学和衍射光学理论出发，推导出阵列波导光栅（Arrayed-Waveguide Gratings）型波分复用器的重要结构参量；针对其性能参量，提出了一些优化设计方法。     

16×0.8nm硅基二氧化硅阵列波导光栅设计

给出了更为合理的阵列波导光栅(AWG)的设计原则。在设计时兼顾了输出谱的非均匀性Lu和输出通道数N的要求,克服了设计中可能引起通道数N丢失和不考虑输出谱非均匀性Lu的缺点。用该方法设计了折射率差为0 75%和16×0 8nm的硅基二氧化硅AWG。采用广角有限差分束传播方法(FD BPM)对所设计的AWG进行了输出谱的模拟,得到了插损为 1.5dB、串扰为 48dB、通道非均匀性约为1dB的AWG,设计指标达到了商用要求。     

阵列波导光栅线性系统理论分析及优化设计

运用线性系统理论分析了阵列波导光栅的模场特性 ,导出器件传输的数学模型即光栅方程。提出了设计阵列波导光栅阵列波导数M的新方法 ,该方法综合考虑了降低器件串扰以及收集发散光场的能力 ,与文献 [1 ]的方法相比简单且准确。分析了造成器件衍射损耗的原因 ,提出了降低器件衍射损耗的方法。给出了 8× 0 .8nm ,中心波长为 1 550nm的阵列波导光栅波分复用器的设计实例 ,并进行了数值模拟计算验证了文中所提方法的准确性。     

用Stigmatic Points法设计高性能80通道阵列波导光栅器件

采用Stigmatic Points方法改进传统的罗兰圆结构设计方法,给出一个实用化、高性能80通道阵列波导光栅器件设计方案.对采用这两种设计方法得到的器件性能结果进行了比较分析,指出了传统设计方法在设计大通道数阵列波导光栅器件中存在的问题以及Stigmatic Points方法对器件性能的改进.     

O波段8通道硅基二氧化硅平坦化阵列波导光栅的设计及制备

设计并制作了一款应用于IEEE 200/400GbE标准802.3bs的阵列波导光栅.该阵列波导光栅使用2.0%的超高折射率差硅基二氧化硅材料,使得芯片尺寸及损耗较小.为了获得平坦化的接收光谱,将输出波导进行展宽,采用多模波导结构,激发若干个高阶模,数个模式叠加使得原本高斯状的光谱顶部产生平坦化,形成箱形接收光谱.设计的阵列波导光栅的中心波长为1 291.10nm,通道间隔为800GHz,芯片尺寸为11mm×4mm.经过等离子增强化学气相沉积和感应耦合等离子刻蚀工艺制备了芯片,测试结果表明最小的插入损耗为-3.3dB,相邻通道间串扰小于-20dB,单通道1dB带宽在2.12~3.06nm范围,实现了良好的解复用和平坦化效果,在实际光通信系统中有一定的实用价值.     

650 nm聚合物阵列波导光栅波分复用器设计

选择在可见光波段具有较低吸收损耗的聚甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯 共聚物作为波导包层材料,使用双酚A型环氧树脂作为折射率调节剂,根据材料的折射率设计了单模波导截面尺寸;然后,采用束传播法优化设计出16信道阵列波导光栅(AWG)器件的版图结构。利用Optiwave软件模拟了AWG器件的光传输特性,结果显示,器件的信道间隔为0.845 01 nm,插入损耗小于14 dB,串扰小于-25 dB。     

16×0.8nmSi基SiO2阵列波导光栅设计、制备及测试

叙述了一个完整的16通道硅基二氧化硅阵列波导光栅(AWG)的设计、制备及测试过程。通道间隔为0.8nm(100GHz),解复用器的插入损耗为16.8dB,其中材料损耗为11.95dB,相邻通道串扰小于-17dB,通道插损非均匀性小于2.2dB。     

阵列波导光栅复用/解复用器焦场的数值分析

本文利用标量波动衍射理论分析了AWG系统焦场分布,数值计算了阵列波导光栅系统的焦场分布,此方法简便,对器件的优化设计有一定的指导意义.     

单侧耦合16通道100GHz硅基二氧化硅阵列波导光栅的研制

介绍了一种新型单侧耦合16通道、100GHz通道间隔的硅基二氧化硅阵列波导光栅(AWG)。通过增加一个Y分支波导结构,将AWG的输入、输出波导等间距整齐排列,仅用一个光纤阵列(FA)就可以对AWG器件进行耦合封装。这种AWG的结构设计可有效地减小器件尺寸和增加波导结构的弯曲半径,可减少器件的抛光和耦合时间,可降低器件的成本。     

基于质子交换和刻蚀工艺的体铌酸锂阵列波导光栅

提出一种将质子交换技术和刻蚀技术结合的体铌酸锂波导和器件加工方案,基于质子交换的铌酸锂晶体相变特性改变,降低了质子交换区直接刻蚀难度,结合质子交换的纵向折射率改变和刻蚀波导的横向结构改变,波导尺寸显著降低,采用粒子群算法优化波导尺寸,最小可达2.5μm。基于该工艺方案设计了中心波长为1550 nm、四通道且通道间隔为400 GHz的阵列波导光栅,该阵列波导光栅的传输损耗约为6 dB,相邻通道间串扰均低于22 dB,整体尺寸仅为850μm×620μm,在高密度铌酸锂光子集成互连等场景具有较大的应用潜力。     

Superprism Behaviour of an Array of Photonic Crystal Waveguides

The behaviour of an array of photonic crystal waveguides is numerically investigated. It is shown that high dispersion may be achieved in the telecommunication window around 1550 nm, with a device whose dimensions are in the order of half a mm².     

光栅周期包含的Bragg层数对Bragg型凹面衍射光栅的影响

单个衍射光栅周期所包含的Bragg周期层数是连续Bragg齿型凹面衍射光栅的主要参数之一,该参数可改变光栅齿结构,对凹面衍射光栅的分辨力.自由光谱范围及衍射效率有重要影响.本文通过理论分析与仿真模拟,对比了4种不同层数的Bragg型凹面衍射光栅的特性参数.研究结果表明:在衍射光栅尺寸不变的情况下,改变单个光栅周期包含的Bragg周期层数不会显著提高器件主衍射级次的分辨力;单个光栅周期包含的Bragg周期层数与光栅可衍射的级次数成正相关.单周期层数的Bragg凹面衍射光栅的主衍射级次效率最高,其可衍射的级次数最少,且其他衍射级次分散的能量最少;增加单个光栅周期所包含的Bragg周期层数会降低主衍射级次的自由光谱范围.该研究对于设计低插损、高分辨率、宽工作波段的波分复用器或光栅光谱仪具有重要的指导意义.     

短程透镜-光栅型集成波分复用器

制备了一种短程透镜——光栅型集成光学波分复用器。本文简述了波分复用器的原理和制备工艺,描述了其中的关键元件光波导光栅和光波导透镜的设计及特性测量,给出了波分特性的实验结果.     

Improved Design of 8-Channel Silicon-on-Insulator (SOI) Arrayed Waveguide Grating (AWG) Multiplexer Using Tapered Entry into the Slab Waveguides

An improved design of silicon-on-insulator based 8 × 8 AWG multiplexer is presented using tapered entry into the slab waveguide. Our simulation result clearly shows significant enhancement of electric field from 0.44 V/m to 0.732 V/m, reduction in insertion loss from 7.13 db to 2.7 db, with bandwidth of 230 GHz and channel spacing 200 GHz while keeping other parameters within acceptable limits.     

Improved Design of 8-Channel Silicon-on-Insulator (SOI) Arrayed Waveguide Grating (AWG) Multiplexer Using Tapered Entry into the Slab Waveguides

An improved design of silicon-on-insulator based 8 × 8 AWG multiplexer is presented using tapered entry into the slab waveguide. Our simulation result clearly shows significant enhancement of electric field from 0.44 V/m to 0.732 V/m, reduction in insertion loss from 7.13 db to 2.7 db, with bandwidth of 230 GHz and channel spacing 200 GHz while keeping other parameters within acceptable limits.     

Reduced back reflection design for an etched diffraction grating based planar demultiplexer

A design for a planar etched diffraction grating (EDG) demultiplexer is presented to reduce the back reflection. By reducing the diffracted field at the input waveguide, the present design makes the best effort to reduce the optical return loss. A design example is given to verify the performance. The spectral response at the input waveguide is simulated and the results show that at the wavelengths that cause back reflection, the reduced back reflection design only receives –47.7 dB of the input power, whereas the design without reduced back reflection receives –3.7 dB of the input power.     

A 32-channel 100 GHz wavelength division multiplexer by interleaving two silicon arrayed waveguide gratings

A 32-channel wavelength division multiplexer with 100 GHz spacing is designed and fabricated by interleaving two silicon arrayed waveguide gratings (AWGs). It has a parallel structure consisting of two silicon 16-channel AWGs with 200 GHz spacing and a Mach-Zehnder interferometer (MZI) with 200 GHz free spectral range. The 16 channels of one silicon AWG are interleaved with those of the other AWG in spectrum, but with an identical spacing of 200 GHz. For the composed wavelength division multiplexer, the experiment results reveal 32 wavelength channels in C-band, a wavelength spacing of 100 GHz, and a channel crosstalk lower than -15 dB.     

Etched-Diffraction-Grating-Based Planar Waveguide Demultiplexer on Silicon-on-Insulator

An optical wavelength demultiplexer with the etched diffraction grating (EDG) on the silicon-on-insulator (SOI) material is demonstrated. Fabricated by the wet-anisotropic-etching method, 90° turning mirrors are used to bend waveguides, and the size of the EDG-based demultiplexer is minimized to only 16×2.5 mm². The crosstalk is below −16 dB. The on-chip loss is about 9.97 dB, which is composed of about 8.72 dB excess loss and 1.25 dB diffraction loss. The polarization-dependent central wavelength shift is below 0.13 nm, and the polarization-dependent loss is about 0.35 dB. The sources of the crosstalk and loss are discussed in details, and the related measures to improve the performance are also presented.