First-principles study of ferromagnetism in Zn- and Cd-doped SnO2

The electronic structures and magnetic properties of Zn- and Cd-doped SnO₂ are investigated using first-principles calculations within the generalized gradient approximation (GGA) and GGA+U scheme. The substitutional Zn and Cd atoms introduce holes in the 2p orbitals of the O atoms and the introduced holes are mostly confined to the minority-spin states. The magnetic moment induced by doping mainly comes from the 2p orbitals of the O atoms, among which the moment of the first neighboring O atoms around the dopant are the biggest. The U correction for the anion-2p states obviously increases the moment of the first neighboring O atoms and transforms the ground states of the doped SnO₂ from half-metallic to insulating. The magnetic coupling between the moments induced by two dopants is ferromagnetic and the origin of ferromagnetic coupling can be attributed to the p–d hybridization interaction involving holes.     

Synthesis and optical properties of SnO2-CuO nanocomposite

SnO₂-CuO nanocomposite was synthesized by impregnating SnO₂ nanowires with CuCl₂ solution and subsequent calcination. SEM and XRD were used to characterize the morphology and structure of the product. The optical properties were analyzed by Raman and photoluminescence (PL) spectra at room temperature. Except the strong orange emission of SnO₂, the PL spectrum showed a red shoulder at 678 nm which originated from the interface between SnO₂ and CuO.     

钴掺杂二氧化锡纳米粉的光致发光和磁学性质

研究了钴掺杂对二氧化锡纳米粉的光致发光性质和磁学性质的影响,发现钴掺杂对发光带的位置影响很小,但紫外发光带与蓝色发光带的强度之比随掺杂含量的增加而下降.当钴掺杂含量达到0.02时,样品中的铁磁性被完全破坏.讨论了样品中的磁相互作用的机理,认为掺杂离子的不均匀分布、自旋极化子与掺杂离子之间的耦合都可能导致反铁磁性的相互作用,这种反铁磁性的作用破坏了铁磁性. 关键词： 钴掺杂二氧化锡 光致发光 磁学性质     

Gd-doped SnO2 nanoparticles: Structure and magnetism

Gd-doped SnO₂ nanoparticles were chemically prepared doping 0-12.5% Gd into SnO₂ and calcined at 600 °C. X-ray diffraction and Fourier transformed infrared spectroscopy measurements show the formation of single phase of Sn_1−xGd_xO₂ up to x=0.0625 while at x=0.125, an additional secondary phase of tetragonal GdO₂ (not cubic Gd₂O₃) is detected. The transmission electron microscopy studies show that the individual particles are single crystalline with an average size in the range of 10-12 nm. Magnetization measurements show the absence of ferromagnetic and antiferromagnetic ordering in all samples; however surface spin effects and enhanced Gd-O-Gd interactions are proposed to account for the observed magnetic properties of the samples.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.     

Effect of Mg doping on the electrical properties of SnO2 nanoparticles

Sol-gel derived Mg doped tin oxide (Sn_1−xMg_xO₂) nanocrystals were synthesized with x ranging between 0.5 and 7 at. %. Characteristic single phase tetragonal structure of pure and doped samples was obtained and doping saturation was inferred by X-ray diffraction analysis. Structural, morphological and phase informations were obtained by high resolution transmission electron microscope, field emission scanning electron microscope and X-ray photoelectron spectroscopy respectively whereas bonding information was obtained from Fourier transformed infrared spectroscopy. Measurement of different electrical parameters with frequency (200 Hz-10⁵ Hz) has been carried out at room temperature. Ultrahigh dielectric constant and metallic AC conductivity were observed for undoped tin oxide and the profiles reflected highly sensitive changes in the atomic and interfacial polarizability generated by doping concentrations. Relaxation spectra of tangent loss of any sample did not show any loss peak within the frequency range. Both the grain and grain boundary contributions are observed to increase as the doping concentration increased. Results of first principle calculation based on density functional theory indicated effective Fermi level (E_F) suppression due to Mg doping which is responsible for the experimentally observed conductivity variation. AC conductivity was found to depend strongly on the doping concentration and the defect chemistry of the compound. Mg doped SnO₂ may find applications as a low loss dielectric and high density energy storage material.     

Substrate effects on the oxygen gas sensing properties of SnO2/TiO2 thin films

In this study, SnO₂/TiO₂ thin films are fabricated on SiO₂/Si and Corning glass 1737 substrates using a R.F. magnetron sputtering process. The gas sensing properties of these films under an oxygen atmosphere with and without UV irradiation are carefully examined. The surface structure, morphology, optical transmission characteristics, and chemical compositions of the films are analyzed by atomic force microscopy, scanning electron microscopy and PL spectrometry. It is found that the oxygen sensitivity of the films deposited on Corning glass 1737 substrates is significantly lower than that of the films grown on SiO₂/Si substrates. Therefore, the results suggest that SiO₂/Si is an appropriate substrate material for oxygen gas sensors fabricated using thin SnO₂/TiO₂ films.     

Annealing effect on CdS/SnO2 films grown by chemical bath deposition

The extensive investigation of the annealing effect in nitrogen atmosphere on the structural optical and electrical properties of chemically deposited CdS films on SnO₂ has been performed. The as-deposited film shows 2.45 eV band gap (E_g) and decreases with increasing annealing temperature. The film annealed at 623 K having pure hexagonal phase (a = 4.14 Å, c = 6.71 Å for [1 0 0] plane) and E_g = 2.36 eV shows 10 times higher conductivity for all temperature range, and shows two different activation energies E_a = 0.114 eV and E_a = 0.033 eV for the temperature range 395 K ≤ T ≤ 515 K and 515 K ≤ T ≤ 585 K, respectively. The structural parameters such as dislocation density, strain and optical parameters such as absorption and extinction coefficient are calculated and compared for all the films.     

Preparation and characterization of SnO2 nanoparticles using high power pulsed laser

Tin dioxide (SnO₂) nanoparticles having 3 nm size were synthesized by irradiating pure tin metal using high power Nd:YAG laser in deionized water. Formation of nano-SnO₂ crystallites was confirmed by X-ray diffraction (XRD) and AFM study. UV-vis absorption spectral studies showed a peak at 240 nm. FTIR spectrum showed a band in the range of 400-700 cm⁻¹ which was assigned to Sn-O antisymmetric vibrations. Photoluminescence spectrum of synthesized SnO₂ nanoparticles showed peak corresponding to 3.175, 2.901 and 2.613 eV respectively.     

The influence of nickel dopant on the microstructure and optical properties of SnO2 nano-powders

The microstructure and optical properties of Ni-doped SnO2 nano-powders are studied in detail. By Ni-doping, not only the grain size reduces, but also the grain shape changes from nano-rods to spherical particles. The crystallization becomes better with annealing temperature increasing. The band gap energy decreases as nickel doping level increases. The sp-d hybridization and alloying effect due to amorphous SnO2-x phase should be responsible for the band gap narrowing effect. Nickel dopant does not change the photoluminescence （PL） peak positions.     

Effects of SnO2 addition on the microstructure and magnetic properties of NiZn ferrites

The microstructure and magnetic properties of SnO₂-doped NiZn ferrites prepared by a solid-state reaction method have been investigated. Due to its low melting point (∼1127 °C), moderate SnO₂ enhanced mass transfer and sintering by forming liquid phase, which accelerated the grain growth. However, excessive SnO₂ producing much of liquid phase retarded mass transfer and sintering, leading to a decrease in grain size. The diffraction intensity of the samples doped with SnO₂ addition was stronger than that of the sample without addition. The lattice constant initially decreased up to a content of 0.10 wt% and showed an increase at higher content up to 0.50 wt%. The initial permeability (μ_i) initially increased up to a content of 0.15 wt% and showed a decrease at higher content up to 0.50 wt%; however, losses (P_L) measured at 50 kHz and 150 mT changed contrarily. Both saturation induction (B_S) and Curie temperature (T_C) decreased gradually with increasing SnO₂. Finally, the sample doped with 0.10–0.15 wt% SnO₂ showed the higher permeability and lower losses.     

Field emission investigations of RuO2-doped SnO2 wires

Field emission studies of a bunch and a single isolated RuO₂:SnO₂ wire have been performed. A current density of 5.73 × 10⁴ A/cm² is drawn from the single wire emitter at an applied field of 8.46 × 10⁴ V/μm. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 μA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO₂:SnO₂ wires offer advantages as field emitters for many potential applications.     

Study of the synthesis and Cl2 gas-sensing properties of nanometer HNO3-doped SnO2

We focused on the effects of the inorganic acid HNO₃ on the gas-sensing properties of nanometer SnO₂ and prepared the powders via a dissolution-pyrolysis method. Furthermore, the powders were characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), field emission scanning electron microscopy (FESEM) and energy-dispersive X-ray spectra (EDS). Several aspects were surveyed, including the calcining temperature, concentration of nitric acid and the working temperature. The results showed that the gas response of 3 wt% HNO₃-doped SnO₂ powders (calcined at 500 °C) to 10 ppm Cl₂ reached 316.5, at the working temperature 175 °C. Compared with pure SnO₂, appropriate HNO₃ could increase the gas sensitivity to Cl₂ gas more significantly.     

Yb effect on the spectroscopic properties of Er-Yb codoped SnO2 thin films

We have investigated the optical properties of sol-gel thin films of tin dioxide (SnO₂) codoped with Er³⁺-Yb³⁺ as a function of Yb³⁺ concentration. The Judd-Ofelt model has been applied to absorption intensities of Er³⁺ (4f¹¹) transitions to establish the so-called Judd-Ofelt intensity parameters: Ω₂, Ω₄, Ω₆. Various spectroscopic parameters were obtained to evaluate their dependence and the potential of the samples as a laser material in the eye-safe laser wavelength (1.53 μm) as a function of Yb³⁺ concentration. An amelioration of the quality factor Ω₄/Ω₆ was found with Yb content. Both the IR photoluminescence (PL) intensity and the up-conversion emission, from Er³⁺ ion in SnO₂, were found to increase with Yb concentration. We show that the Yb³⁺ ion acts as sensitizer for Er³⁺ ion and contributes largely to the improvement of the spectroscopic properties of SnO₂:Er. The mechanism of up-conversion emission is discussed and a model is proposed. The results showed that sol-gel SnO₂ is promising gain media for developing the solid-state 1.5 μm optical amplifiers and tunable up-conversion lasers.     

Magnetic and electronic properties of Cr- and Mn-doped SnO2: ab initio calculations

The ab initio calculations, based on the Korringa–Kohn–Rostoker (KKR) approximation method combined with the coherent potential approximation (CPA), indicated as KKR–CPA, have been used to study the stability of ferromagnetic and ferrimagnetic states, for systems that are SnO₂ doped and co-doped with two transition metals, that is, chromium and manganese. Our results indicate that the ferromagnetic state is more stable than the spin-glass state for the (Sn_1−xCr_xO₂; x = 0.07, 0.09, 0.12 and 0.15)-doped system, while the spin-glass state is more stable than the ferromagnetic state for the (Sn_1−xMn_xO₂; x = 0.02 and 0.05)-doped system. However, the ferromagnetic and/or the ferrimagnetic states are stable for the (Sn_0.98−xMn_0.02Cr_xO₂; x = 0.05, 0.09 and 0.13)-doped system depending on the Cr concentration. Moreover, we estimated the Curie temperature (T_c) for the Cr-doped tin dioxide (SnO₂), and we explained the origin of magnetic behaviour through the total density of states for different doped and co-doped SnO₂ systems.     

Influence of dopant level on structural, optical and magnetic properties of Co-doped anatase TiO2 nanoparticles

Cobalt-doped TiO₂ nanoparticles were synthesized by sol-gel method. The associated structural, optical, compositional and magnetic properties of the nanoparticles as a function of cobalt concentration have been systematically studied. The X-ray powder diffraction reveals that all samples have pure anatase phase tetragonal system and the lattice parameter analysis indicated that Co ions may substitute into the lattice of TiO₂. The average particle size is 15 nm, when found through transmission electron microscope. Optical spectroscopy measurement showed that the bandgap value decreases upon increasing Co concentration. The magnetic measurements revealed that the enhanced room temperature ferromagnetism (RTFM) strongly depends on the doping content.     

Synthesis and nonlinear optical characterization of SnO2 quantum dots

The present paper demonstrates the preparation and characterization of SnO₂ semiconductor quantum dots. Extremely small ∼1.1 and ∼1.4 nm SnO₂ samples were prepared by microwave assisted technique with a frequency of 2450 MHz. Based on XRD analysis, the phase, crystal structure and purity of the SnO₂ samples are determined. UV-vis measurements showed that, for the both size of SnO₂ samples, excitonic peaks are obtained at ∼238 and ∼245 nm corresponding to ∼1.1 nm (sample 1) and ∼1.4 nm (sample 2) sizes, respectively. STM analysis showed that, the quantum dots are spherical shaped and highly monodispersed. At first, the linear absorption coefficients for two different sizes of SnO₂ quantum dots were measured by employing a CW He-Ne laser at 632.8 nm and were obtained about 1.385 and 4.175 cm⁻¹, respectively. Furthermore, the nonlinear refractive index, n₂, and nonlinear absorption coefficient, β, were measured using close and open aperture Z-scan respectively using the same laser. As quantum dots have strong absorption coefficient to obtain purely effective n₂, we divided the closed aperture transmittance by the corresponding open aperture in the same incident beam intensity. The nonlinear refraction indices of these quantum dots were measured in order of 10⁻⁷ (cm²/W) with negative sign and the nonlinear absorption coefficients were obtained for both in order of 10⁻³ (cm/W) with positive sign.     

Large nonlinear optical properties of Fe2O3 nanoparticles

Nonlinear optical properties of Fe₂O₃ nanoparticles were investigated by the signal-beam Z-scan technique with Ar⁺ and Ne–He lasers. The largest reported effective nonlinear coefficient, n₂=−8.07×10⁻⁷ cm²/W, was obtained. It is demonstrated that the nonlinear optical response originals from quantum confinement effect.     

Characterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar atmosphere on physical properties

The Zinc Selenide (ZnSe) thin films have been deposited on SnO₂/glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been characterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap (E_g) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, dρ/dT > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, linear region at low temperature. The temperature at which the transition takes place from exponential to linear region strongly depends on the annealing temperature.