氩离子轰击对四面体非晶碳膜内应力和摩擦系数影响的研究

利用磁过滤真空阴极电弧技术制备了sp³键大于80%的四面体非晶碳(ta-C)薄膜, 通过冷阴极离子源产生keV能量的氩离子轰击ta-C薄膜,研究了氩离子轰击能量对ta-C薄膜结构, 内应力以及耐磨性的影响.通过X射线光电子能谱和原子力显微镜研究了氩离子轰击对薄膜结构 与表面形貌的改性,研究表明,氩离子轰击诱导了ta-C薄膜中sp³键向sp²键的转化, 并且随着氩离子轰击能量的增大,薄膜中sp²键的含量逐渐增多, 薄膜内应力随着氩离子轰击能量的增大逐渐减小.氩离子轰击对薄膜的表面形貌有较大影响, 在薄膜表面形成刻蚀坑,并且改变了薄膜的表面粗糙度,随着氩离子轰击能量的增大, 薄膜的表面粗糙度也会逐渐增大.通过摩擦磨损仪的测试结果,氩离子轰击对薄膜的初始摩擦系数影响较大, 但是对薄膜的稳定摩擦系数影响较小,经过氩离子轰击前后的ta-C薄膜的摩擦系数为0.1左右, 并且具有优异的耐磨性.     

Effect of Ar bombardment on the electrical and optical properties of low-density polyethylene films

The influence of low-energy Ar ion beam irradiation on both electrical and optical properties of low-density polyethylene (LDPE) films is presented. The polymer films were bombarded with 320 keV Ar ions with fuences up to 1×10¹⁵ cm^?2. Electrical properties of LDPE films were measured and the effect of ion bombardment on the DC conductivity, dielectric constant and loss was studied. Optically, the energy gap, the Urbach’s energy and the number of carbon atoms in a cluster were estimated for all polymer samples using the UV–Vis spectrophotometry technique. The obtained results showed slight enhancement in the conductivity and dielectric parameters due to the increase in ion fluence. Meanwhile, the energy gap and the Urbach’s energy values showed significant decrease by increasing the Ar ion fluence. It was found that the ion bombardment induced chain scission in the polymer chain causing some carbonization. An increase in the number of carbon atoms per cluster was also observed.     

High sputtering yields of organic compounds by large gas cluster ions

We measured the sputtering yield, surface roughness and surface damage of thin leucine films bombarded with Ar cluster ions and examined the usefulness of large gas cluster ions for the depth profiling of organic compounds. Ar cluster ion beams with a mean size of 2000 atoms/cluster and energies from 5 to 30 keV were used. Sputtering yields increased linearly with incident ion energy and were extremely high compared to inorganic materials. Surface damage was investigated by measuring positive secondary ions emitted from the leucine film before and after cluster ion irradiation. After irradiation the leucine surface became smoother. The yield ratio of protonated leucine ions to other fragment ions kept constant before and after Ar cluster ion irradiation. These results indicate that large gas cluster ions are useful for depth profiling of organic compounds.     

Mechanisms of oxidation-reduction processes on metal and oxide surfaces under ion bombardment

Surface oxidation occurs if metals are bombarded with low-energy (1–5 keV) ions of a chemically active gas (oxygen) in vacuum. It is ascertained that ion bombardment leads to the generation of lower, intermediate, and higher oxides. The composition and thickness of an oxidized layer depend on the metal reactivity and the dose and energy of oxygen ions. The mechanism underlying the ion-beam oxidation of metal surfaces is proposed. Surface reduction is observed if higher oxides are bombarded with low-energy (1–5 keV) ions of inert gases (argon and helium) in vacuum. It is revealed that ion bombardment not only generates intermediate and higher oxides but sometimes gives rise to surface metallization. The composition and thickness of the reduced layer are determined by the oxide type, the kind of inert gases, and the dose and energy of bombardment. The mechanism describing the ion-beam reduction of higher metal oxide surfaces is proposed.     

Ion beam modification of surface properties of CR-39

The effects of ion-beam bombardment on the physical and chemical properties of poly(allyl diglycol carbonate) (CR-39) polymer have been investigated. CR-39 samples were bombarded with 320 keV Ar and 130 keV He ions at fluences ranging from 1 × 10¹³ to 2 × 10¹⁶ ions/cm². The nature and extent of radiation damage induced were studied by UV–VIS spectrometry, Fourier-transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) analysis, as well as Vickers' hardness measurements. In addition, the effect of ion fluence on the wetting properties of ion-beam bombarded CR-39 polymer was determined by measuring the contact angle for distilled water. UV–VIS spectra of bombarded samples reveal that the optical band gap decreases with increasing ion fluence for both Ar and He ions. In the FTIR spectra, changes in the intensity of the bands on irradiation relative to pristine samples occurred with the appearance of new bands. XRD analyses showed that the degree of ordering of the CR-39 polymer is dependent on the ion fluence. Changes of surface layer composition and an increase in the number of carbonaceous clusters produced important change in the energy gap and the surface wettability. The surface hardness increased from 10.54 MPa for pristine samples to 28.98 and 23.35 MPa for samples bombarded with Ar and He ions at the highest fluence, respectively.     

Low-energy ion-induced electron emission from a MgO(100) thin film: the role of the MgO-substrate interface

We present a detailed study of the electron emission from a thin MgO(100) film on a Mo substrate, bombarded with slow He+, Ne+, and Ar+ ions. Neither the high absolute number of emitted electrons per incoming ion nor the electron spectra can be due to Auger neutralization of the incoming ions at the MgO surface alone. Therefore, an additional mechanism is proposed: holes created in the MgO film are transported to the MgO-substrate interface where they give rise to an Auger neutralization process involving two electrons from the metal substrate conduction band.     

Ion beam sputter deposition of TiO<Subscript>2</Subscript> films using oxygen ions

TiO₂ thin films were grown by ion beam sputter deposition (IBSD) using oxygen ions, with the ion energy and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) being varied systematically. Metallic Ti and ceramic TiO₂ served as target materials. The thin films were characterized concerning thickness, growth rate, surface topography, structural properties, mass density, and optical properties. It was found that the scattering geometry has the main impact on the film properties. Target material, ion energy, and ion incidence angle have only a marginal influence. Former studies on reactive IBSD of TiO₂ using Ar and Xe ions reported equivalent patterns. Nevertheless, the respective ion species distinctively affects the film properties. For instance, mass density and the refractive index of the TiO₂ thin films are remarkably lower for sputtering with oxygen ions than for sputtering with Ar or Xe ions. The variations in the thin film properties are tentatively attributed to the angular and the energy distribution of the film-forming particles, especially, to those of the backscattered primary particles.     

Ar+8轰击石墨表面损伤的扫描隧道显微镜观测研究

报道了用10—112MeV能量的Ar+8离子轰击高定向石墨造成损伤的原子水平观测结果,给出了损伤形貌、损伤大小和损伤数密度.讨论了损伤与表面核能损的关系及损伤过程的可能机制.     

Observation of the Damage on HOPG Surface Induced by Ar+8 Ions

Highly oriented pyrolytic graphite (HOPG) samples were bombarded by Ar+8 ions with energy range from 10.1 to 112MeV. After bombardment the sample surfaces were observed using a STM and NanoScope. The resultS show that the energetic ion could cause observable praotrusionlike damage on the HOPG surface.The relationship betWeen damage and energy loss, and the possible mechanism of damage process are discussed.     

Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions

Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si⁺ ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si₄⁺ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO⁺ were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields.     

SUPERCONDUCTING FILM INJECTED BY IONS FROM PULSED ENERGETIC DENSE PLASMA SOURCE

The oxygen and silicon ions have been obtained respectively from pulsed energetic dense oxygen plasma and silane plasma generated by electrodeless discharge. The oxygen ions have been injected into superconducting Nb films, and the Si ions into superconducting YBCO films in order to investigate the variation of their superconductivity with the ions injected into them. Auger profile data show that the injection depths range from 20 to 40nm in the films, depending on the injection condition and film material. The resistance－temperature relations (R-T curves) indicate that the superconductivity remains unchanged in the photoresist-masked part of the film, but is significantly changed in the exposed part. The evenness of the film surface remains unchanged after injection. This technique may serve as an alternative to the planar inhibiting fabrication technique in the fabrication of the multi-layer structure of superconducting films, and also possibly to the conventional plasma source ion implantation technique in material surface processing.     

Effects of atomic oxygen treatment on structures, morphologies and electrical properties of ZnO:Al films

ZnO:Al (ZAO) film has a potential application in providing spacecrafts the protection against atomic oxygen (AO) erosion. To advance the understanding of the AO resisting mechanisms and the relationships between the structures, morphologies and conductive properties of ZAO film, direct current magnetron sputtered ZAO films with different thicknesses were treated with AO in a ground-based simulation facility. The microstructure, surface chemical state, morphologies and electrical properties of pristine films and irradiated ones were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and Hall measurement. It is found that AO exposure produces novel, oriented recrystallization of the surface particles. It also increases the content of oxygen ions in fully oxidized stoichiometric surroundings on the surface, resulting in the decrease of the conductivity. As the thickness of ZAO film increases, the crystallinity, conductivity and resistance to AO erosion are all improved.     

The influence of argon ion bombardment on the electrical and optical properties of clean silicon surfaces

The effect of low energy noble gas ion bombardment on the electrical and optical properties of Si(211) surfaces has been investigated by surface conductivity and field effect measurements, ellipsometry and AES. With this combination of techniques, information is obtained concerning the electrical properties, the chemical composition and the damage of the surface layer. Upon ion bombardment in the energy range of 500–2000 eV, ellipsometry shows the formation of a damaged surface layer with optical properties close to those of an evaporated amorphous silicon film. In order to measure the conductivity changes as sensitive as possible, nearly intrinsic silicon crystals were used. For the clean, 5200 Ω cm Si(211) surface, bombarded only with a mass-analyzed argon ion beam, a small increase in conductivity is found to occur after a small ion dose (saturation after 5 × 10¹⁴ ions cm^?2 while after 5 × 10¹³ ions cm^?2 already half of the increase has occurred). The effect was found to be independent of ion energy between 500 and 2000 eV. As the field effect signal did not change after this treatment, it is concluded that the surface state density in the neighbourhood of the Fermi level shows a slight decrease.     

Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition

Theoretical and experimental investigations on the dependence of the intensity of infrared （IR） absorption of poly- crystalline cubic boron nitride thin films under the residual compressive stress conditions have been performed. Our results indicate that the intensity of the IR absorption is proportional to the total degree of freedom of all the ions in the ordered regions. The reduction of interstitial Ar atom concentration, which causes the increase in the ordered regions of cubic boron nitride （cBN） crystallites, could be one cause for the increase in the intensity of IR absorption after residual compressive stress relaxation. Theoretical derivation is in good agreement with the experimental results concerning the IR absorption intensity and the Ar interstitial atom concentration in cubic boron nitride films measured by energy dispersion X-ray spec- troscopy. Our results also suggest that the interstitial Ar is the origin of residual compressive stress accumulation in plasma enhanced cBN film deposition.     

Fluid simulation of inductively coupled Ar/O_2 plasmas:Comparisons with experiment

In this work, a two-dimensional fluid model has been employed to study the characteristics of Ar/O2 radio frequency(RF) inductively coupled plasma discharges. The emphasis of this work has been put on the influence of the external parameters(i.e., the RF power, the pressure, and the Ar/O2 gas ratio) on the plasma properties. The numerical results show that the RF power has a significant influence on the amplitude of the plasma density rather than on the spatial distribution.However, the pressure and the Ar/O2 gas ratio affect not only the amplitude of the plasma density, but also the spatial uniformity. Finally, the comparison between the simulation results and the experimental data has been made at different gas pressures and oxygen contents, and a good agreement has been achieved.     

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采用另加偏压的单阴极弧氦放电直线等离子体装置对氦等离子体的基本特性进行了研究.对氦轴向输运规律做了描述并与光谱测量数据做了定性地比较.实验结果表明,氦等离子体的电子温度与电子密度均随放电电流、约束磁场的增加而增加.氦原子与氦离子的辐射光谱随放电电流、偏压、磁场的变化规律进行了测量分析,同时氦离子对钨靶积分辐照效应进行了观察.这些结果不但提供了氦等离子体的基本特性,对于研究氦离子与面向等离子材料相互作用导致产生气泡、肿胀、脆化损伤等的评估,特别是对将来伴有(n,α)反应时具有一定的参考价值.     

Argon nanobubbles in Al(111): a photoemission study

Two fundamental manifestations of Al conduction electron response to Ar atom core hole in the final state of photoemission have been studied in implanted Ar bubbles in Al(111). Ar 2p binding energy and the Doniach-Sunji? asymmetry of the core-level line shape vary systematically as functions of Ar+ implantation energy and number of ions bombarded (fluence). The observations are explained by relating the strength of Al conduction electron screening to the size of the Ar nanobubbles.     

Studies on surface modification of poly(tetrafluoroethylene) film by remote and direct Ar plasma

Poly(tetrafluoroethylene) (PTFE) surfaces are modified with remote and direct Ar plasma, and the effects of the modification on the hydrophilicity of PTFE are investigated. The surface microstructures and compositions of the PTFE film were characterized with the goniometer, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Results show that the remote and direct plasma treatments modify the PTFE surface in morphology and composition, and both modifications cause surface oxidation of PTFE films, in the forming of some polar functional groups enhancing polymer wettability. When the remote and direct Ar plasma treats PTFE film, the contact angles decrease from the untreated 108-58° and 65.2°, respectively. The effect of the remote Ar plasma is more noticeable. The role of all kinds of active species, e.g. electrons, ions and free radicals involved in plasma surface modification is further evaluated. This shows that remote Ar plasma can restrain the ion and electron etching reaction and enhance radical reaction.     

级联弧放电氦等离子体特性研究

采用另加偏压的单阴极弧氦放电直线等离子体装置对氦等离子体的基本特性进行了研究。对氦轴向输运规律做了描述并与光谱测量数据做了定性地比较。实验结果表明,氦等离子体的电子温度与电子密度均随放电电流、约束磁场的增加而增加。氦原子与氦离子的辐射光谱随放电电流、偏压、磁场的变化规律进行了测量分析,同时氦离子对钨靶积分辐照效应进行了观察。这些结果不但提供了氦等离子体的基本特性,对于研究氦离子与面向等离子材料相互作用导致产生气泡、肿胀、脆化损伤等的评估,特别是对将来伴有(n, α)反应时具有一定的参考价值。     

Studies on bombardment-enhanced conductivity. IV: IV. On the chemical state of oxygen-bombarded Nb2O5

It is now a well-established result that an increased oxygen content in bombarded metal targets influences the yields of secondary ions or photons. A similar influence appears to have been identified also for a decreased oxygen content in the case of bombarded oxide targets. The chemical state of targets which have gained or lost oxygen is less often specified and the present work was therefore undertaken to determine this state in a particular system, oxygen-bombarded Nb₂O₅. The results relate to conductivity, annealing, and electron diffraction. Specifically, intermediate doses $\text{(? 4 × 10}\text{ions}\text{cm}{}^2\text{)}$ of 35 keV oxygen ions led, as with many other substances, to amorphization with unchanged conductivity. Doses in excess of $\text{2 × 10}{}^{17}\text{ions}\text{cm}{}^2$, however, caused an increase in the bulk conductivity of a factor of about 4 × 10⁸ as well as a corresponding stoichiometry change such that Oxygen was lost and a thin layer of crystalline NbO was formed. These changes persisted when bombarded specimens were heated in vacuum at 150–800 °C. The results are discussed from the standpoint of three mechanisms, namely thermal-spike induced vaporization, internal precipitation, and preferential sputtering. Vaporization could be excluded on the basis of the oxygen partial pressures for the process $\text{Nb}{}_2\text{O}{}_5\text{(1) = 2}\text{NbO}\text{(1) +}\text{3}\text{2}\text{O}{}_2\text{(g)}$ being too low, while precipitation could be tentatively excluded on the basis of the vacuum annealings. There were no obvious objections, however, to a model for oxygen loss based on preferential oxygen sputtering even if the details of the model were unclear.