Growth behavior of electroless Ni-Co-P deposits on Fe

The electroless Ni-Co-P films were deposited on Fe film in plating baths using sodium hypophosphite as reducing agent and nickel and cobalt sulphates as ion source at pH value of 9 and plating temperature from 60 to 85 °C. The effect of the mol ratio of CoSO₄/CoSO₄ + NiSO₄ in plating bath on the growth behavior of electroless Ni-Co-P films was studied. The electroless Ni-Co-P films were characterized by transmission electron microscopy for the microstructure and thickness, and energy dispersive spectrometer for the composition. The results showed that the electroless Ni-Co-P films can be deposited on Fe films without the step of sensitization and activization; the surface of electroless Ni-Co-P film on Fe is quite even; the more the Co²⁺ ion in plating bath, the larger the activation energy and the smaller the plating rate of electroless Ni-Co-P films; and the mol ratio of Co/Co + Ni in film is larger than that in plating bath (with the exception of the film deposited in the bath with 0.9 mol ratio of CoSO₄/CoSO₄ + NiSO₄)     

Effect of nickel on the initial growth behavior of electroless Ni-Co-P alloy on silicon substrate

In this work the small amounts of NiSO₄ was added to a basic electroless plating bath of CoSO₄ with Na₂H₂PO₂ as reducing agent for the deposition of Co-Ni-P film on a silicon substrate. The initial growth behavior, containing plating rate, chemical composition, crystal structure, surface morphology and micro-structure, of the electroless plating film was characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM). The results showed that the growth morphology variation of the Co-Ni-P films deposited in the basic CoSO₄ + small amounts of NiSO₄ bath is the same as that of Co-P film deposited in the basic CoSO₄ bath, the plating rate of the Co-Ni-P film is much more rapid than that of the Co-P film, the Ni/Co wt.% in the Co-Ni-P film is greatly larger than that in the plating bath, and the structure of as-deposited film is crystalline at first stage and later stage.     

Abnormal reduction of coercivity on magnetic cobalt–platinum alloy films

Ultrathin Co–Pt alloy films as substrate were studied by the surface magneto-optical Kerr effect. As the growth of Ni, the films show uniquely high polar Kerr responses without any in-plane signals. The coercivity decreased until the thickness of Ni film was higher than 5 ML. A new surface structure was discovered at 7–10 ML Ni/Co–Pt films by the low-energy electron diffraction. Interestingly, polar Kerr signal and coercivity of the 10 ML Ni/Co–Pt(1 1 1) template film reduced rapidly as Co films were further deposited onto only about 1–2 ML. Then the films show a canted magnetization with a rollback hysteresis in the polar configuration during the growth of Co. Coercivity of the 7 ML Co/Ni/Co–Pt film was found unusually down to almost 100 Oe.The corresponding magic number at around 7 ML of Co in the abnormal reduction of coercivity may be attributed to the cluster formations of Co.     

Correlation between the structural and optical properties of Co doped ZnO thin films prepared at different film thickness

Cobalt doped zinc oxide (ZnO:Co) thin films were deposited on glass substrates by ultrasonic spray technique decomposition of Zinc acetate dihydrate and cobalt acetate tetrahydrate in an ethanol solution with film thickness. All films are polycrystalline with a hexagonal wurtzite-type structure with a preferential orientation according to the direction (0 0 2), with the maximum crystallite size was found of 59.42 nm at 569 nm. The average transmittance of all films is about 65–95% measured by UV–vis analyzer. The band gap energy increased from 3.08 to 3.32 eV with increasing the film thickness from 192 to 569 nm. The increase of the electrical conductivity with increases in the film thickness to maximum value of 9.27 (Ω cm)⁻¹ can be explained by the increase in carrier concentration and displacement of the electrons of the films. The correlation between the band gap and crystal structure suggests that the band gap energy of Co doped ZnO is influenced by the crystallite size and the mean strain.     

Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications

The present work reports on resistive switching (RS) characteristics of Neodymium (Nd)-doped bismuth ferrite (BFO) layers. The Nd (2–10 at%) doped BFO thin film layers were deposited using a spray pyrolysis method. The structural analysis reveals that a higher Nd doping concentration in BFO leads to significant distortion of the prepared Nd:BFO thin films from rhombohedral to tetragonal characteristics. The morphological analysis shows that all the deposited Nd:BFO thin films have regularly arranged grains. The X-ray photoelectron spectroscopy (XPS) analysis reveals that the prepared Nd:BFO thin films have a higher Fe ³⁺/Fe ²⁺ratio and less oxygen vacancy (V_O) defects which enriches the ferroelectric characteristics in Nd:BFO layers. The polarization-electric field (P-E) and RS characteristics of the fabricated Nd:BFO-based RS device were examined. It was observed that the Nd (7 at%) doped BFO RS device shows large remnant polarization (P _r) of 0.21 μC/cm² and stable RS characteristics.     

Fe,Co共掺杂ZnO薄膜结构及发光特性研究

采用溶胶凝胶法在玻璃衬底上制备了Fe,Co共掺Zn0.9FexCo0.1-xO(x=0,0.03,0.05,0.07)系列薄膜.通过扫描电镜(SEM)、X射线衍射(XRD)、X射线光电子谱(XPS)和光致发光(PL)谱对薄膜样品的表面形貌、晶体结构、成分和光学性能进行了研究.XRD结果表明所有ZnO薄膜样品都呈六方纤锌矿结构,在样品中没有观察到与Fe和Co相关的团簇,氧化物及其他杂相的衍射峰,表明共掺杂改善了Fe或Co在ZnO的分散性.XPS测试结果揭示样品中Co离子的价态为+2价;Fe离子的价态为+2价和+3价共存,但Fe相对浓度的增大导致Fe3+含量增加.所有样品的室温光致发光谱(PL)均观察到紫外发光峰和蓝光双峰,其中Fe,Co共掺ZnO薄膜的紫外发光峰较本征ZnO出现蓝移,蓝光双峰峰位没有变化,但发光强度有所减弱;而掺杂ZnO薄膜的绿光发光峰几乎消失.最后,结合微结构和成分分析对薄膜样品的发光机理进行了讨论.     

Microstructural evolution and metastable phase formation in laser ablation-deposited films of Fe-rich Fe–Ge intermetallic compounds

Thin films of Fe-rich Fe–18 at% Ge and Fe–25 at% Ge were deposited by a pulsed laser ablation technique on single crystal NaCl substrates at room temperature to study phase evolution using transmission electron microscopy. As-deposited films contain nano-scale clusters embedded in a featureless matrix. Quadrupole mass spectrometric observations of the laser-ablated plume show the presence of charged clusters. During in situ heating of the films, the fine-scale clusters grow and profuse crystallization to a bcc FeGe solid solution occurs. For Fe–25?at% Ge thin film, crystallized bcc grains undergo two ordering transitions, viz. bcc?→?B2?→?DO₃, during subsequent cooling to room temperature. However, in the case of Fe–18 at% Ge thin film, crystallization leads to formation of the disordered bcc phase. Growth morphologies of the crystals formed during heat treatment indicate faceted growth form, which has been explained by using Jackson's interface model.     

Fe掺杂对溶胶凝胶法制备的ZnO: Ni薄膜结构及发光特性的影响

采用溶胶凝胶法在玻璃基片上制备了ZnO及Ni, Fe共掺杂的Zn_0.95-xNi_0.05Fe_xO (x=0, 0.005, 0.01, 0.03, 0.05) 薄膜. 通过扫描电镜(SEM) 和X射线衍射(XRD) 研究了薄膜样品的表面形貌和晶体结构. 结果表明所有样品都具有(002) 择优取向, Fe掺杂导致ZnO: Ni薄膜的晶体质量变差, 晶粒尺寸减小, 但适当的Fe掺杂有利于获得致密、 均匀的薄膜. XPS测试结果表明样品中Ni离子的价态为+2价, Fe离子的价态为+2价和+3价.室温光致发光(PL) 测量表明, 所有样品均观察到较强的紫外发光峰, 蓝光双峰和绿光发光峰. ZnO: Ni薄膜的发光强度可以通过Fe掺杂进行有效调节. 进而我们讨论了Ni, Fe共掺杂ZnO样品的发光机理.     

Optical and electronic properties of NiFe2O4 and CoFe2O4 thin films

We report the optical and electronic properties of the inverse spinel ferrite NiFe₂O₄ and CoFe₂O₄ thin films deposited on single crystal sapphire by electron beam deposition. We carried out variable temperature (78–500 K) transmittance measurements on the thin films to investigate the optical properties and electronic structures of these ferrites. The absorption spectra of both NiFe₂O₄ and CoFe₂O₄ thin films show insulating characters with Ni (Co) d to d on-site transitions below 3 eV. The energy bands above 3 eV are mainly due to the O 2p to Fe 3d charge transfer transitions. The observed electronic transitions have been assigned based on the first principles calculations and comparisons with structurally similar Ni and Co-containing compounds. The Co²⁺ d to d transition in the CoFe₂O₄ thin film shows a strong temperature dependence, likely due to the spin-charge coupling effect.     

室温生长MgO底层诱导(001)取向FePt薄膜的有序化过程对FePt成分的依赖

室温下通过磁控溅射在表面热氧化的Si基片上生长了MgO/Fe_xPt_100-x双层膜和Fe_xPt_100-x单层膜系列样品，Fe_xPt_100-x的原子成分x=48—68.研究了热处理前后不同成分FePt薄膜的晶体结构和磁性的变化，尤其是MgO底层的引入对FePt的晶体结构和磁性的影响 关键词： FePt(001)薄膜 0相')" href="#">L1₀相     

Role of electrolyte pH on structural and magnetic properties of Co–Fe films

Co–Fe films were electrodeposited on polycrystalline Titanium substrates from the electrolytes with different pH levels. X-ray diffraction (XRD) was used to study the crystal structure of the films. The XRD patterns showed that the films grown at the pH levels of 3.70 and 3.30 have a mixed phase consisting of face-centred cubic (fcc) and body-centred cubic, while those grown at pH=2.90 have only fcc structure. It was observed that the film composition, by energy dispersive x-ray spectroscopy, contain around 88 at% Co and 12 at% Fe for all films investigated in this study. Morphological observations indicated that all films have grainy structure with the slight change of grain size depending on the electrolyte pH. Magnetoresistance measurements, made at room temperature, showed that all films exhibited anisotropic magnetoresistance, which is affected by the electrolyte pH. From the magnetic measurements made by vibrating sample magnetometer, the saturation magnetization increases as the electrolyte pH decreases. Furthermore, all films have in-plane easy-axis direction of magnetization.     

Al和Sb共掺对ZnO有序阵列薄膜的结构和光学性能的影响

采用水热合成法在预先生长的ZnO种子层的玻璃衬底上制备出Al和Sb共掺ZnO纳米棒有序阵列薄膜. 通过X射线衍射、扫描电镜、透射电镜和选区电子衍射分析表明:所制备的薄膜由垂直于ZnO种子层的纳米棒组成, 呈单晶六角纤锌矿ZnO结构, 且沿[001]方向择优生长, 纳米棒的平均直径和长度分别为27.8 nm和1.02 μm. Al和Sb共掺ZnO纳米棒有序阵列薄膜的拉曼散射分析表明:相对于未掺杂ZnO薄膜的拉曼振动峰(580 cm^-1), Al和Sb共掺ZnO阵列薄膜的E₁(LO)振动模式存在拉曼位移. 当Al和Sb的掺杂量为3.0at%,4.0at%,5.0at%,6.0at%时, Al和Sb共掺ZnO阵列薄膜的拉曼振动峰的位移量分别为3,10,14,12 cm^-1. E₁ (LO) 振动模式位移是由Al和Sb掺杂ZnO产生的缺陷引起的. 室温光致发光结果表明:掺杂Al和Sb后, ZnO薄膜在545 nm处的发光强度减小,在414 nm处的发光强度增加. 这是由于掺杂Al和Sb后, ZnO薄膜中Zn_i缺陷增加, O_i缺陷减少引起的. 关键词： Al和Sb共掺ZnO薄膜 纳米棒有序阵列 结构表征 拉曼散射     

Mössbauer and XRD study of novel quaternary Sn-Fe-Co-Ni electroplated alloy

Constant current electrochemical deposition technique was used to obtain quaternary alloys of Sn-Fe-Co-Ni from a gluconate electrolyte, which to date have not been reported in the literature. For the characterization of electroplated alloys, ⁵⁷Fe and ¹¹⁹Sn Conversion Electron Mössbauer Spectroscopy (CEMS), XRD and SEM/EDAX were used. XRD revealed the amorphous character of the novel Sn-Fe-Co-Ni electrodeposited alloys. ⁵⁷Fe Mössbauer spectrum of quaternary deposit with composition of 37.0 at% Sn, 38.8 at% Fe, 16.8 at% Co and 7.4 at% Ni displayed a magnetically split sextet (B = 28.9T) with broad lines typical of iron bearing ferromagnetic amorphous alloys. Magnetically split ¹¹⁹Sn spectra reflecting a transferred hyperfine field (B = 2.3T) were also observed. New quaternary Sn-Fe-Co-Ni alloys were successfully prepared.     

Effects of γ rays irradiation on structure and property of TiO2 thin films

TiO₂ thin films were deposited on a glass substrate by the radio frequency magnetron sputtering method, and annealed for 2 h at temperatures of 550°C. Then, ⁶⁰Co γ rays with different doses were used to irradiate the resulting TiO₂ thin films. The surface features of films before and after irradiation were observed by scanning electron microscope (SEM). Simultaneously, the crystal structure and optical properties of films before and after irradiation were studied by X-ray diffraction (XRD), UV–VIS transmission spectrum and Photoluminescence (PL) spectrum, respectively. The SEM analysis shows that the film is smooth with tiny particles on the film surface, and non-crystallization trend was clear after irradiated with γ rays. The XRD results indicated that the structure of the film at the room temperature mainly exists in the form of amorphous and mixed crystal at a sputtering power of 200 W, and non-crystallinity was more obvious after irradiation. Obvious difference can be found for the transmissibility of the irradiated and pre irradiation TiO₂ films by the UV-VIS spectra. The color becomes light yellow, and the new absorption edge also appeared at about 430 nm. PL spectra and photocatalysis experiments indicate that the photocatalysis degradation rate of the TiO₂ films on methylthionine chloride solution irradiated with the maximum dose can be increased to 90%.     

结构相变对Fe掺杂TiO2薄膜室温铁磁性的影响

采用直流磁控溅射方法在玻璃基底上制备了不同Fe掺杂浓度的TiO₂薄膜, 并对其晶体结构和磁特性进行了研究.在所有掺杂样品中,均观察到了室温铁磁性, 磁性源于Fe离子与其近邻空间分布的空穴相互作用. 在掺杂量为7%的锐钛矿相薄膜中观察到了最大的磁化强度. 随着Fe掺杂浓度的进一步增加, TiO₂的晶体结构逐渐由锐钛矿相向金红石相转变,并且磁性减弱. 不同结构的TiO₂中Ti–O键长不同,导致替代的磁性Fe离子与空穴的作用强度发生改变, 进而使其磁性发生变化. 关键词： 稀磁半导体 结构相变 铁磁性     

Magnetic Texturing of Xenon-Irradiated Iron Films Studied by Magnetic Orientation Mössbauer Spectroscopy

Modifications of magnetic properties upon heavy-ion irradiation have been recently investigated for films of ferromagnetic 3d-elements (Fe, Ni, Co) and alloys (permendur, permalloy), in relation to changes of their microstructure. Here we report on Xe-ion irradiation of a highly textured iron film prepared via pulsed-laser deposition on a MgO(100) single crystal and containing a thin ⁵⁷Fe marker layer for magnetic orientation Mössbauer spectroscopy (MOMS). We compare the results with those obtained for a polycrystalline Fe/Si(100) sample produced by electron evaporation and premagnetized before Xe-irradiation in a 300 Oe external field. Characterization of the samples also included magneto-optical Kerr effect (MOKE), Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD).     

Substrate orientation-induced distinct ferromagnetic moment in Co:ZnO films

Dilute (3.8 at.%) cobalt-doped ZnO thin films are deposited on LiTaO₃ (LT) substrates with three different orientations [LT(1 1 0), LT(0 1 2) and LT(0 1 8)] by direct current reactive magnetron co-sputtering. The experimental results indicate that Co atoms with 2+ chemical valence are successfully incorporated into the ZnO host matrix on various oriented substrates, and the substrate orientations have a profound influence on the crystal growth and magnetization of Co:ZnO films. A large magnetic moment of 2.42μ_B/Co at room temperature is obtained in the film deposited on LT(0 1 2), while the corresponding values of the other films deposited on LT(1 1 0) and LT(0 1 8) are 1.21μ_B/Co and 0.65μ_B/Co, respectively. Furthermore, the crystal growth mode of Co:ZnO films on various oriented LT, the relationship between the microstructures and corresponding ferromagnetic properties are also discussed.     

Room temperature magnetism of Fe doped CdS nanocrystals

Undoped and Fe doped CdS nanocrystals with Fe content of 2–5 at% of average crystallite size 1.2–2 nm have been obtained using chemical co-precipitation method with 2-mercaptoethonal as capping agent at 80 °C. X-ray diffraction (XRD) results showed that the undoped CdS nanocrystals were in mixed phase of cubic and hexagonal, where as the doped CdS nanocrystals were in hexagonal phase. Room-temperature ferromagnetism has been observed in Fe-doped CdS nanocrystals. Magnetic studies indicated diamagnetism in undoped, ferromagnetism in lightly doped (2 and 3 at%) and paramagnetism in samples of higher Fe content (4 and 5 at%). The substitutional incorporation of Fe³⁺ ion in Cd²⁺ sites was reflected in structural and electron paramagnetic resonance (EPR) measurements. Isolated as well as interacting Fe³⁺ ions are observed in EPR.     

Fabrication and properties of Li-doped ZnCoO diluted magnetic semiconductor thin films

Li-doped ZnCoO (ZnCoO:Li) diluted magnetic semiconductor thin films were prepared on SiO₂ substrates by pulsed laser deposition. In ZnCoO:Li films, Co²⁺ substituted Zn²⁺ and Li occupied the interstitial sites behaving as donors. The ZnCoO:Li films are of high electron concentration in the 10²⁰ cm⁻³ order and acceptable crystal quality with a hexagonal wurtzite structure. No cluster, precipitate, or second phase was found from the X-ray diffraction pattern and Co k-edge X-ray absorption near-edge structure measurements. The sp-d exchange interactions between the band electrons and the localized d electrons of Co ions substituting Zn ions were observed. The magnetization of ZnCoO:Li film is 0.61 μB/Co, higher than that of the ZnCoO film (0.49 μB/Co). The enhanced defect density and electron concentration due to the introduced Li donors may answer for the improvement of ferromagnetism at room temperature.     

Sm–Co films for high-density magnetic recording media

In this experiment, Cr–Cu thin film was used as an underlayer for Sm–Co film. The magnetic properties and crystal structure of Sm–Co films prepared onto this kind of underlayer have been studied. Grain size and surface roughness have been reduced with the introduce of Cr. The Cr addition into the Cu underlayer also improves the c-axis orientation of Sm–Co films. As a result, films with squareness ratio as high as 0.95 and perpendicular coercivity as high as 12.3 kOe have been prepared.