Bonding configurations in amorphous carbon and nitrogenated carbon films synthesised by femtosecond laser deposition

The effect of nitrogen addition and laser fluence on the atomic structure of amorphous carbon films (a-C) synthesized by femtosecond pulsed laser deposition has been studied. The chemical bonding in the films was investigated by means of X-ray photoelectron (XPS) and Raman spectroscopies. XPS studies revealed a decrease in the sp³ bonded carbon sites and an associated increase in the N-sp²C bonding sites with increasing nitrogen content in the CN_x films. An increase in laser fluence from 0.36 to 1.7 J/cm² led to a rise in sp³C sites. These results were further confirmed by Raman spectroscopy. The I_D/I_G ratio increased monotonically and G line-width decreased with the increase of nitrogen content in the films indicating a rise in either the number or the size of the sp² clusters. Furthermore a visible excitation wavelength dependence study established the resonant Raman process in a-C and CN_x films. PACS 81.05.Uw; 81.15.Fg; 82.80     

Mechanical properties and platelet adhesion behavior of diamond-like carbon films synthesized by pulsed vacuum arc plasma deposition

Diamond-like carbon (DLC) is an attractive biomedical material due to its high inertness and excellent mechanical properties. In this study, DLC films were fabricated on Ti6Al4V and Si(1 0 0) substrates at room temperature by pulsed vacuum arc plasma deposition. By changing the argon flow from 0 to 13 sccm during deposition, the effects of argon flow on the characteristics of the DLC films were systematically examined to correlate to the blood compatibility. The microstructure and mechanical properties of the films were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) surface analysis, a nano-indenter and pin-on-disk tribometer. The blood compatibility of the films was evaluated using in vitro platelet adhesion investigation, and the quantity and morphology of the adherent platelets was investigated employing optical microscopy and scanning electron microscopy.The Raman spectroscopy results showed a decreasing sp³ fraction (an increasing trend in I_D/I_G ratio) with increasing argon flow from 0 to 13 sccm. The sp³:sp² ratio of the films was evaluated from the deconvoluted XPS spectra. We found that the sp³ fraction decreased as the argon flow was increased from 0 to 13 sccm, which is consistent with the results of the Raman spectra. The mechanical properties results confirmed the decreasing sp³ content with increasing argon flow. The Raman D-band to G-band intensity ratio increased and the platelet adhesion behavior became better with higher flow. This implies that the blood compatibility of the DLC films is influenced by the sp³:sp² ratio. DLC films deposited on titanium alloys have high wear resistance, low friction and good adhesion.     

Low energy repetitive miniature plasma focus device as high deposition rate facility for synthesis of DLC thin films

Diamond-like carbon (DLC) films were deposited on Si (1 0 0) substrate using a low energy (219 J) repetitive (1 Hz) miniature plasma focus device. DLC thin film samples were deposited using 10, 20, 50, 100 and 200 focus shots with hydrogen as filling gas at 0.25 mbar. The deposited samples were analyzed by XRD, Raman Spectroscopy, SEM and XPS. XRD results exhibited the diffraction peaks related to SiO₂, carbon and SiC. Raman studies verified the formation amorphous carbon with D and G peaks. Corresponding variation in the line width (FWHM) of the D and G positions along with change in intensity ratio (I_D/I_G) in DLC films was investigated as a function of number of deposition shots. XPS confirmed the formation sp² (graphite like) and sp³ (diamond like) carbon. The cross-sectional SEM images establish the 220 W repetitive miniature plasma focus device as the high deposition rate facility for DLC with average deposition rate of about 250 nm/min.     

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained.During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T_room), 100 °C, 150 °C and 200 °C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films.Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 °C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I_D/I_G or sp³/sp² ratio and not by the absolute sp³ or sp² concentration.     

Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films

Nitrogen-doped amorphous carbon thin films (a-CN_x) were prepared on silicon substrate by pulsed laser deposition process using methane (CH₄) and nitrogen (N₂) as source gas. The electrical properties of a-CN_x films changes with nitrogen concentration in the film structure. The intensity ratio of the D and G peak (I_D/I_G) increases with higher nitrogen concentration, which means that sp²-clusters were formed in these films and is responsible for the enhancement of conductivity of the a-CN_x films. We observed that the amorphous carbon (a-C) films becoming more graphitic in nature yielding higher conductivity/lower resistivity with increase of nitrogen concentration. Electron field emission result shows that the emission current density enhances with nitrogen doping that indicates the useful in electron field emission devices application.     

Influence of sulfidation treatment on the structure and tribological properties of nitrogen-doped diamond-like carbon films

The nitrogen-doped diamond-like carbon (DLC) films were deposited on high speed steel (HSS) substrates in the direct current unbalanced magnetron sputtering system. Sulphurized layer was formed on the surface of DLC films by means of liquid sulfidation in the intermixture of urea and thiourea solution in order to improve the tribological properties of DLC films. The influence of sulfidation treatment on the structure and tribological properties of DLC films was investigated in this work. The structure and wear surface morphology of DLC films were analyzed by Raman spectroscopy, XPS and SEM, respectively. It reveals that the treated films are smooth and uniform; and sulfur atoms are bonded chemically. The treated films have broader distribution of Raman spectra in the range of 1000-1800 cm⁻¹ and higher I_D/I_G ratio than the untreated films as a result of the appearance of the crystalline graphite structure after the sulfidation treatment. It is showed that the sp² relative content increase in the treated films from the XPS measurement. The Raman results are consistent with the XPS results. The tribological properties of DLC films were investigated using a ball-on-disk rotating friction and wear tester under dry friction conditions. It is found that the sulfidation concentration plays an important part in the tribological properties of the treated DLC films. The results showed the treated films with low sulfidation concentration have a lower friction coefficient (0.1) than the treated films with high sulfidation concentration (0.26) and the untreated films (0.27) under the same friction testing conditions, which can be attributed to both the presence of sulfur-containing materials and the forming of the mechanical alloyed layer on the wear surface. Adding the dry nitrogen to the sliding surface in the testing system helps the friction coefficient of the treated films with low sulfidation concentration to decrease to 0.04 further in this work. On the basis of the experimental results, it is indicated that the liquid sulfidation technique, which is low-cost, non-polluting and convenience, would be an appropriate method for the surface treatment of DLC films.     

Raman studies on nanocomposite silicon carbonitride thin film deposited by r.f. magnetron sputtering at different substrate temperatures

Raman studies of nanocomposite SiCN thin film by sputtering showed that with increase of substrate temperature from room temperature to 500 °C, a transition from mostly sp² graphitic phase to sp³ carbon took place, which was observed from the variation of I_D/I_G ratio and the peak shifts. This process resulted in the growth of C₃N₄ and Si₃N₄ crystallites in the amorphous matrix, which led to increase in hardness (H) and modulus (E) obtained through nanoindentation. However, at a higher temperature of 600 °C, again an increase of sp² C concentration in the film was observed but the H and E values showed a decrease due to increased growth of the graphitic carbon phase. The whole process got reflected in a modified four‐stage Ferrari–Robertson model of Raman spectroscopy. Copyright © 2010 John Wiley & Sons, Ltd.     

Low voltage electrodeposition of CNx films and study of the effect of the deposition voltage on bonding configurations

Carbon nitride (CN_x) films were deposited from acetonitrile at low voltage (150-450 V) through electrodeposition. The films were characterized by atomic force microscopy (AFM), Raman spectroscopy and Fourier transform infrared (FT-IR) spectroscopy. AFM investigations revealed that the grain size was ∼200 nm and roughness was ∼10 nm. The films were found to be continuous and close packed. IR spectra revealed existence of strong sp³, sp² type bonding and weak sp type carbon nitrogen bonds and these bonds were found to increase with voltage. The fraction of sp³-bonded species in the sample increased in low voltage range and after reaching maximum at 350 V, decreased for higher voltages. However, the concentration of sp² CN ring structures in the film increased with increasing voltage. Also, the peak width decreased at low voltages reaching a minimum and increased thereafter. It was observed that the voltage dependent increase in the concentration of polymeric type sp² CN (chain) structures was much more pronounced than that of graphitic type sp² CN (ring) structures. Raman spectra showed the presence of both the D and G bands. The shift in the G band indicated the presence of nitrogen in the film. The I_D/I_G ratio was found to increase with the incorporation of nitrogen. Auger electron spectroscopy (AES) showed a clear increase in the nitrogen content with increase in the voltage. The formation of the film could be explained on the basis of dissociation of electrolyte under applied voltage.     

Electrochemical corrosion behaviors of a-C:H and a-C:NX:H films

The a-C:H and a-C:N_X:H films were deposited onto silicon wafers using radio frequency (rf) plasma enhanced chemical vapor deposition (PECVD) and pulsed-dc glow discharge plasma CVD, respectively. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to characterize chemical nature and bond types of the films. The results demonstrated that the a-C:H film prepared by rf-CVD (rf C:H) has lower I_D/I_G ratio, indicating smaller sp² cluster size in an amorphous carbon matrix. The nitrogen concentrations of 2.9 at.% and 7.9 at.% correspond to carbon nitride films prepared with rf and pulse power, respectively.Electrochemical corrosion performances of the carbon films were investigated by potentiodynamic polarization test. The electrolyte used in this work was a 0.89% NaCl solution. The corrosion test showed that the rf C:H film exhibited excellent anti-corrosion performance with a corrosion rate of 2 nA cm⁻², while the carbon nitride films prepared by rf technique and pulse technique showed a corrosion rate of 6 nA cm⁻² and 235 nA cm⁻², respectively. It is reasonable to conclude that the smaller sp² cluster size of rf C:H film restrained the electron transfer velocity and then avoids detriment from the exchange of electrons.     

Substrate effects on the microstructure of hydrogenated amorphous carbon films

In this work, plasma enhanced chemical vapour deposition was used to prepare hydrogenated amorphous carbon films (a-C:H) on different substrates over a wide range of thickness. In order to observe clear substrate effect the films were produced under identical growth conditions. Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopies were employed to probe the chemical bonding of the films. For the films deposited on silicon substrates, the Raman I_D/I_G ratio and G-peak positions were constant for most thickness. For metallic and polymeric substrates, these parameters increased with film thickness, suggesting a change from a sp³-bonded hydrogenated structure to a more sp² network, NEXAFS results also indicate a higher sp² content of a-C:H films grown on metals than silicon. The metals, which are poor carbide precursors, gave carbon films with low adhesion, easily delaminated from the substrate. The delamination can be decreased/eliminated by deposition of a thin (∼10 nm) silicon layer on stainless steel substrates prior to a-C:H coatings. Additionally we noted the electrical resistivity decreased with thickness and higher dielectric breakdown strength for a-C:H on silicon substrate.     

退火对B掺杂纳米金刚石薄膜微结构和电化学性能的影响

采用热丝化学气相沉积法制备B掺杂纳米金刚石薄膜,并对薄膜进行真空退火处理,系统研究了不同退火温度对B掺杂纳米金刚石薄膜的微结构和电化学性能的影响.结果表明,当退火温度升高到800 ℃后,薄膜的Raman谱图中由未退火时在1157,1346,1470,1555 cm^-1处的4个峰转变为只有D峰和G峰,说明晶界上的氢大量解吸附量减少,并且D峰和G峰的积分强度比I_D/I_G值变为最小,即sp²相团簇     

Tribological effect of iron oxide residual on the DLC film surface under seawater and saline solutions

This paper discusses the seawater and saline solutions effects on the tribological behavior of diamond-like carbon (DLC) films. The adsorption of Fe on DLC surface is one of the mechanisms that is believed to be the cause of the decrease in dispersive component of the surface energy and increase of the I_D/I_G ratio leading to low friction coefficient and wear rate under corrosive environments. Tribological behaviors DLC films were experimentally evaluated under corrosive environments by using steel ball and DLC coated steel flat under rotational sliding conditions. The DLC films were prepared on 440 stainless steel disks by DC-pulsed PECVD using methane as a precursor gas. Two different set of tribological system was assembled, one when the liquids and the pairs were put inside of a stainless steel vessel and others inside of a PTFE. Every tribological test was performed under 10 N normal load120 mms^? 1 of sliding speed. The friction coefficients were evaluated during 1000 cycles.     

Structural modifications of diamond like carbon films induced by MeV nitrogen ion irradiation

Diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates using plasma deposition technique. The deposited films were irradiated using 2 MeV N⁺ ions at fluences of 1×10¹⁴, 1×10¹⁵ and 5×10¹⁵ ions/cm². Samples have been characterized by using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). Analysis of Raman spectra shows a gradual shift of both D and G band peaks towards higher frequencies along with an increase of the intensity ratio, I(D)/I(G), with increasing ion fluence in irradiation. These results are consistent with an increase of sp² bonding. XPS results also show a monotonic increase of sp²/sp³ hybridization ratio with increasing ion fluence. Plan view TEM images show the formation of clusters in the irradiated DLC films. HRTEM micrographs from the samples irradiated at a fluence of 5×10¹⁵ ions/cm² show the lattice image with an average interplanar spacing of 0.34 nm, revealing that the clusters are graphite clusters. The crystallographic planes in these clusters are somewhat distorted compared to the perfect graphite structure.     

Modeling of the molecular and electronic structures of multiple-decker sandwich macromolecules with η5-π bonds on the basis of biscyclopentadienyl derivatives 60H10 of a C60 fullerene

The molecular and electronic structures of the (CpFe)₂C₆₀H₁₀ complex of the D _5d symmetry, where Cp is the $^ \cdot C_5 H_5 $ cyclopentadienyl radical, are simulated using the ab initio Hartree-Fock-Roothaan method in the 3–21G basis set. In this complex, hydrogen atoms are attached to carbon atoms of the C₆₀ fullerene which occupy α-positions with respect to two oppositely lying five-membered rings. Each FeCp semisandwich moiety is linked to atoms of one of these five-membered rings by the η⁵-π-type bond. It is found that the energy of the η⁵-π Fe-C₆₀H₁₀ bonds in the (CpFe)₂C₆₀H₁₀ complex is comparable to that of the η⁵-π Fe-Cp bond in the FeCp₂ ferrocene molecule. The optimum geometry calculated for the (CpFe)₂C₆₀H₁₀ complex is used for modeling of the structure of the quasi-linear macromolecule [-FeC₆₀H₁₀-]_n, (I). The band structure of the energy spectrum of macromolecule I is calculated in the valence approximation of the extended Hückel method within the crystalline-orbital approach. The band gap in the spectrum of macromolecule I is ～2.27 eV. The band structure of the spectrum of this macromolecule is compared with the spectra of the hypothetical molecules [-FeCp-]_n and [-FeC₂₀-]_n.     

Possibilities of C 1s XPS and N(E) C KVV Auger spectroscopy for identification of inherent peculiarities of diamond growth

The interaction of C-atoms and CH_n-radicals with uncleaned and argon cleaned silicon substrate and with diamond surface after H-treatment have been studied in situ by XPS and Auger spectroscopy. It was found the formation of a new chemical surface state of carbon atoms in the case of carbon atoms and radicals interaction with cleaned silicon. The same chemical state was revealed on the H-treated diamond surface. Graphite-like structure of carbon atoms was observed on the surface of unlearned silicon and H-treated diamond after interaction with carbon atoms and radicals. N(E) C KVV Auger spectrum for the new chemical state of carbon atoms significantly differs from typical spectra for sp²- and sp³-bonded carbon materials. The high energy part of this spectrum was interpreted under the hypothesis of sp³-bonded carbon atoms but with shifted fermi level position.     

Magnetic Resonance Imaging of Diffusion in the Presence of Background Gradients and Imaging of Background Gradients

The measurement of the self-diffusion coefficient D by an NMR technique that uses an applied gradient G_A can be corrupted by systems that have a background magnetic field gradient G₀ and also by imaging gradients G₁, when used in an imaging mode. In a nonimaging mode, the corrupting cross term G_A · G₀can be eliminated in the diffusion measurement by use of an alternating-pulse-field-gradient (APFG) sequence that allows an accurate and uncorrupted measurement of D. A Carr-Purcell echo train enables the measurement of the expectation value, 〈DG²₀〉; assuming D and G₀ to be uncorrelated will allow 〈G²₀〉 to be determined. An image of D or of 〈DG²₀〉 may be obtained without the corrupting G_A · G₀ and G_A · G_I terms by appending a standard imaging sequence to an APFG sequence or a Carr-Purcell sequence, respectively; assuming D and G₀ to be uncorrelated will allow (〈G²₀〉 to be determined within each pixel. Measurements of D and 〈G²₀〉 and their images are made in apple flesh in which minute air bubbles are shown to produce the large 〈G²₀〉. Their values in an 81 g Golden Delicious apple at a measuring frequency of 100 MHz were D = 1.42 × 10⁻⁵ cm²/s and [formula] = 8.9 G/cm.     

High temperature Raman spectroscopy studies of carbon nanowalls

High temperature Raman experiments were carried out on carbon nanowalls (CNWs). The intensity of the defect‐induced D mode decreased significantly after the sample was heated in air ambient. The Raman intensity ratio of D mode and G mode, I_D/I_G, changed from 2.3 at room temperature to 1.95 after the sample was heated to 600 °C. This change was attributed to the removal of surface amorphous carbon by oxidation. In contrast to I_D/I_G, the intensity ratio of the D′ mode and the G mode, I_D′/I_G, did not change much after heating, indicating that the surface amorphous carbon and surface impurity do not contribute as much to the intensity of the D′ mode. The dominant contributor to the D′ mode could be the intrinsic defects. Copyright © 2007 John Wiley & Sons, Ltd.     

The structure of 32S I. Spectroscopy of highly-excited states

Assignments of I, π, T are made to 30 levels in ³²S between 7.35 and 11.76 MeV excitation energy, making the spectroscopy of the T= 0 states rather complete up to 10 MeV and that of the T = 1 states up to 12 MeV. A reassessment of existing data in the light of the new results clarifies the spectrum of I ^π = 1⁺, T = 1 states up to 15 MeV excitation energy. High-spin states (I = 52 - 7) below 10 MeV excitation energy have been investigated by n t γ angular-correlation measurements with the ²⁹Si(α, nγ) reaction at E _α 14.4 MeV. Five g-wave resonances of the ³¹P(p, γ) reaction, leading to the formation of I _π + 4⁺, 5⁺ states in ³²S, have been identified between 10 and 12 MeV excitation energy. The spectrum of T = 1 states between 10.7 and 12 MeV, has been investigated by measurements of γ-ray angular distributions on resonances of the ³¹P(p, γ) reaction and by measurements of resonance strengths. Several ³²S levels between 7.35 and 8.75 MeV excitation energy were studied as final states in resonance decays. Finally a search was performed for I ^π = 0⁺ resonances of the ²⁸Si(α, γ) reaction.     

The reaction K−p → Δπ0: Zeroes and partial waves from 0.4 to 2.5 GeV/c

We have applied here the technique of Barrelet zeroes to perform a phase-shift analysis of the reaction K^?p → Δ⁰π⁰ using most of the bubble chamber data between 1540 and 2450 MeV c.m. energy. With a minimum of assumptions, viz. the existence of the best known resonances Σ(1765) and Σ(2030), we eliminate a number of spurious resonances and we confirm resonant states D₅(2260) and G₉(2210). Furthermore we present an almost unique solution from 1540 MeV and we compare our results with the most recent analyses.     

Search for missing predicted high-spin states in28Si

New shell model calculations have predicted several high-spin (I ^π=5⁺ and 6⁺) levels in²⁸Si near 10 MeV excitation energy which are missing from or ambiguous in existing experimental studies. Angular distributions, linear polarizations and Doppler-shifts ofγ-rays have been measured for theγ-decay of theE _p=1,911 and 2,073 KeV resonances of the²⁷Al(p, γ) reaction in an attempt to discover these missing states or confirm the discrepancies between experiment and theory. The excitation energies and spin-parities of the resonances were determined as 13,424.4±0.2 keV,I ^π=5⁺ and 13,582.3±0.5 keV,I ^π=6⁺. States populated in theγ-decay of these resonances were assigned spins and parities as follows: 11,777 keV,I ^π=5⁺; 11,331 keV,I ^π=6⁺; 10,417 keV,I ^π=5⁺; 9,417 keV,I ^π=4⁺ and 8,945 keV,I ^π=5⁺. On the basis ofγ-ray transition rates T=1 is assigned to the 13,424 keV level and T=0 to the 10,417 and 11,777 keV levels. With the new data excellent agreement is achieved between the experimental spectrum of²⁸Si and the new shell model predictions. These data provide evidence for aK ^π=3⁺ rotational band comprised by the 6,276, 6,889, 8,945 and 11,331 keV levels. This band emerges also from the shell model wave functions as do theK ^π=0⁺ bands based on the ground state and the 6,691 keV state.