A facile thermal evaporation route for large-area synthesis of tin oxide nanowires: Characterizations and their use for liquid petroleum gas sensor

In this paper, a very simple procedure was presented for the reproducible synthesis of large-area SnO₂ nanowires (NWs) on a silicon substrate by evaporating Sn powders at temperatures of 700, 750, and 800 °C. As-obtained SnO₂ NWs were characterized by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectroscopy. They revealed that the morphology of the NWs is affected by growth temperature and the SnO₂ NWs are single-crystalline tetragonal. The band gap of the NWs is in the range of 4.2–4.3 eV as determined from UV/visible absorption. The NWs show stable photoluminescence with an emission peak centered at around 620 nm at room-temperature. The sensors fabricated from the SnO₂ NWs synthesized at 700 °C exhibited good response to LPG (liquefied petroleum gas) at an operating temperature of 400 °C.     

Comparison between ZnO nanowires grown by chemical vapor deposition and hydrothermal synthesis

Vertically aligned zinc oxide nanowires (NWs) were synthesized by two different techniques: chemical vapor deposition (CVD) and hydrothermal synthesis. To compare the effects of different growth conditions, both F-doped SnO₂ (FTO) coated-glass and silicon wafers were used as substrates. Before NWs growth, all the substrates were covered with a ZnO seed layer film obtained with the same procedure, which acts as nucleation site for the subsequent growth of the nanowires both during CVD and hydrothermal synthesis. We studied the influence of the two synthesis techniques and the growth duration on the final morphology, orientation, and density of the ZnO NWs using electron microscopy and X-ray diffraction, while the NWs optical quality was addressed by UV–Vis spectroscopy. By discussing advantages and disadvantages of both synthesis methods, we finally show that the application purpose often drives the choice of the NWs growth process and the substrate to be used.     

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

Aligned straight silica nanowires (NWs) have been synthesized on Si wafer by thermal evaporation of mixed powders of zinc carbonate hydroxide and graphite at 1100 °C and condensation on Si substrate without using any catalyst. The straight silica NWs have diameters ranging from 50 to 100 nm, and lengths of several micrometers, with cone-shaped tips at their ends. High deposition temperature and relatively high SiO_x vapor concentration near the growth substrate would be beneficial to the formation of the aligned straight silica NWs. Different morphologies of silica nanostructures have also been obtained by varying the deposition temperature and the vapor concentration of the SiO_x molecules. Room temperature photoluminescence measurements on the oriented silica NWs show that two green emission bands at 510 and 560 nm, respectively, revealing that the aligned straight silica NWs might have potential applications in the future optoelectronic devices.     

Si epitaxial growth on LaAlO3(0 0 1)

We report on the growth of Si on c(2 × 2) reconstructed LaAlO₃(0 0 1) surfaces at high substrate temperature (700 °C) by molecular beam epitaxy. An initial Volmer-Weber mode is evidenced using reflection high energy electron diffraction (RHEED), X-ray photoelectron diffraction (XPD) and atomic force microscopy. After the deposition of a few monolayers, the islands coalesce. Using X-ray photoelectron spectroscopy, we demonstrate that Si islands exhibit an abrupt interface with the LaAlO₃ substrate without formation of silicate or silica. Finally, combined RHEED and XPD measurements show the epitaxial growth of Si with a unique Si(0 0 1)//LaAlO₃(0 0 1) and Si<1 0 0>//LAO<1 1 0> relationship.     

Multiple UV-blue luminescence emissions in electrochemical anodic etched n-type silicon wafer

This very paper is focusing on the preparation of porous nanostructures in n-type silicon (1 1 1) wafer by chemical etching technique in alkaline aqueous solutions of 5 M NaOH, 5 M K₂CO₃ and 5 M K₃PO₄, and particularly, on its ultraviolet-blue photoluminescence emission. The anodic chemical etched silicon wafer has been characterized by means of optical microscopy, scanning electron microscopy, fluorescence spectroscopy, atomic force microscopy and Fourier transform infrared spectroscopy. This very surface morphology characterization has been clearly shown - the effect of anodic-chemical-etching procedure processed in K₂CO₃ or K₃PO₄ was much vigorous than that processed in NaOH. The FTIR spectra indicate that the silicon oxide was formed on the surface of electrochemical etched n-Si (1 1 1) wafers, yet not on that of the pure chemical etched ones anyhow. And an intense ultraviolet-blue photoluminescence emission is observed, which then differs well from the silicon specimen etched in alkaline solution with no anodic potential applied. The proper photoluminescence mechanism is discussed, and hence there may be a belief that the intense ultraviolet-blue photoluminescence emission would be attributed to the silicon oxide coating formed on silicon wafer in anodic-chemical-etching process.     

Carbon nanotube synthesis on oxidized porous silicon

Carbon nanotubes were grown on thermally oxidized porous silicon by catalytic chemical vapor deposition from the mixture of ferrocene and xylene precursor. The growth rate of carbon nanotubes showed dependence on the oxidation extent of porous silicon. On pristine porous silicon surfaces, only poor nanotube growth was observed, whilst samples oxidized in air at 200, 400, 600 and 800 °C prior to the deposition process proved to be suitable substrates for carbon nanotube synthesis. Networks of carbon tubes with diameter of ∼40 and ∼10 nm observed on the surfaces of samples were investigated by electron microscopy and by energy dispersive X-ray analysis.     

Selective growth of carbon nantoubes on SiO2/Si substrate

Three-step raising temperature process was employed to fabricate carbon nanotubes by pyrolysis of ferrocene/melamine mixtures on silica and single crystalline silicon wafers respectively. Then the morphologies, structures and compositions of obtained carbon nanotubes are investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscope (EDX) and electron energy-loss spectroscopy (EELS). TEM and SEM observation shows that on silica substrate, high-oriented carbon nanotube can grow compactly to form continuous film on both frontal and cross-section surfaces, but on silicon substrate, only can form on cross-section surface. These carbon nanotubes have much irregular cup-like structure, and with outer diameter varying from 25 nm to 35 nm. At the top end of carbon nanotube there is a catalyst particle. EDX analysis reveals that the particle are iron cluster, and EELS spectrum indicates that the nanotube is composed of pure carbon. Finally, the effect of substrate surface roughness on the growth behavior of carbon nanotubes has been discussed.     

Surface analysis of thermally annealed porous silicon

Quasi-monocrystalline porous silicon (QMPS) has high potential for photovoltaic application for its enhanced optical absorption compared to bulk silicon in the visible range of solar spectrum. In this study, QMPS was formed from low porosity (∼20-30%) porous silicon (PS) produced by electrochemical anodization, and thermal annealing in the temperature range 1050-1100 °C under pure hydrogen ambient for a duration of 30 min. We analyzed the material surface by grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and dynamic secondary ion mass spectroscopy (SIMS) study. The crystallinity was confirmed by GIXRD while FESEM studies revealed that the surface layer is pore free with voids embedded inside the body. AFM studies indicated relatively smooth and uniform surface and the dynamic SIMS study showed the depth profiles of impurities present in the material.     

Preparation of uniform porous hydroxyapatite biomaterials by a new method

In this paper, a new method of preparation of uniform porous hydroxyapatite biomaterials was reported. In order to obtain uniform porous biomaterials, disk samples were formed by the mixture of hydroxyapatite (HAP) powders and monodispersed polystyrene microspheres, and then HAP uniform porous materials with different diameter and different porosity (diameter: 436 ± 25 nm, 892 ± 20 nm and 1890 ± 20 nm, porosity: 46.5%, 41.3% and 34.7%, respectively) were prepared by sintering these disk samples at 1250 °C for 5 h. The pure phase of HAP powders fabricated by the hydrothermal technology was confirmed by X-ray diffraction (XRD). The surface and size distribution of pores in HAP biomaterials were observed by scanning electron microscopy (SEM), and the pore size distribution in porous HAP biomaterials was tested by mercury intrusion method.     

Synthesis of silver nanowires via electroplating technology and its surface enhanced Raman scattering effect

This very paper is focusing on the preparation of silver nanostructures and the surface enhanced Raman scattering effect of the silver nanostructures produced. Via electroplating technology, silver nanowires and nanoparticles were prepared on silicon wafers. Characterization was performed by X-ray diffraction, scanning electron microscope, transmission electron microscope equipped with X-ray energy dispersion spectroscope and selected area electron diffraction, which reveals that the formation of silver nanostructures depends on the over-potential. The produced silver nanowires are of crystalline FCC structure and grow in 〈0 1 1〉 direction. The growth mechanism has been further discussed. The surface enhanced Raman scattering effect is achieved with the silver nanostructures produced.     

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm⁻¹ under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.     

Synthesis of GaN nanowires by Tb catalysis

Rare earth metal seed Tb was employed as catalyst for the growth of GaN wires. GaN nanowires were synthesized successfully through ammoniating Ga₂O₃/Tb films sputtered on Si(1 1 1) substrates. The samples characterization by X-ray diffraction and Fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite GaN. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal GaN nanowire structures. The growth mechanism of the GaN nanowires is discussed.     

Effect of nitrogen flow ratios on the structure and mechanical properties of (TiVCrZrY)N coatings prepared by reactive magnetron sputtering

This study reports the influence of growth conditions on the characteristics of (TiVCrZrY)N coatings prepared by reactive magnetron sputtering at various N₂-to-total (N₂ + Ar) flow ratio, which is R_N. The crystal structures, microstructure, and mechanical properties for different R_N were characterized by electron spectroscopy for chemical analysis, X-ray diffraction, atomic force microscopy, field-emission-scanning electron microscopy, transmission electron microscopy, and nanoindentation. The results indicate that the TiVCrZrY alloy and nitride coatings have hexagonal close-packed (hcp)-type and sodium chloride (NaCl)-type solid-solution structures, respectively. The voids in the coatings are eliminated and the growth of the columnar crystal structures is inhibited along with an increasing R_N. As a consequence, highly packed equiaxed amorphous structures with smooth surfaces are formed. The coatings accordingly achieved a pronounce hardness of 17.5 GPa when R_N = 100%.     

Preparation and photocatalytic property of α-Fe2O3 hollow core/shell hierarchical nanostructures

We report the preparation of a novel kind of α-Fe₂O₃ hollow core/shell hierarchical nanostructures self-assembled by nanosheets. A green precursor powder is first prepared using nontoxic and inexpensive FeCl₃ and urea in ethylene glycol by a surfactant-free solvothermal method at 160 °C for 15 h. The α-Fe₂O₃ hollow core/shell hierarchical nanostructures are obtained by the thermal treatment of the green precursor powder. The as-prepared α-Fe₂O₃ hollow core/shell hierarchical nanostructures are porous, and exhibit a good photocatalytic activity for the degradation of phenol. The samples are characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM).     

Study on crystalline to amorphous structure transition of Cr coatings by magnetron sputtering

The influence of deposition rate on crystalline to amorphous microstructure transition of Cr coatings was studied through preparation of Cr coatings deposited onto silicon wafers using magnetron sputtering technique. The microstructure and morphology of Cr coatings were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results show that Cr coating prepared at 400 W exhibits dense columnar crystalline structure and the crystallite size and crystallization rate are increased expressly in the initial 5 min. When the deposition rate achieved to the maximum, Cr coating shows a case of infinite periodic renucleation where new crystals are assumed to be nucleated periodically on the surfaces of growing crystals and strong persistence of the columnar growth morphology is apparent. However, Cr coating exhibits overall microstructure of amorphous phase mixed with a few nano-crystal grains as the deposition rate decreases to the minimum.     

Fabrication of well-aligned CdS nanotubes by CVD-template method

Well-aligned CdS nanotubes have been synthesized within the nanochannels of the porous anodic alumina (PAA) membranes by pyrolyzing cadmium bis(diethyldithiocarbamate) [Cd(S₂CNEt₂)₂] at 400 °C. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that the CdS nanotubes are highly ordered with uniform diameter in range of 80-150 nm and the length up to tens of microns. X-ray diffraction (XRD), Raman spectrum, energy-dispersive spectroscopy (EDS) and selected-area electron diffraction (SAED) demonstrate that the nanotubes are composed of pure hexagonal phase polycrystalline CdS. The synthetic route can, in principle, be extended to fabricate other nanotubes of a wide range of semiconductors.     

Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(1 1 1)

GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/V films at 900 °C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectrum were carried out to characterize the structure, morphology, and photoluminescence properties of GaN sample. The results show that the GaN nanowires and nanorods with pure hexagonal wurtzite structure have good emission properties. The growth direction of nanostructures is perpendicular to the fringes of (1 0 1) plane. The growth mechanism is also briefly discussed.     

Synthesis and characterization of porous silicon layers for 1D photonic crystal application

In this paper, we studied the optical and physical properties of electrochemically prepared porous silicon layers. The atomic force microscopy analysis showed that the etching depth, pore diameter and surface roughness increase as the etching time increased from 30 to 50 mA/cm². By tuning two current densities J₁ = 50 mA/cm² and J₂ = 30 mA/cm², two samples of 1D porous silicon photonic crystals were fabricated. The layered structure of 1D photonic crystals has been confirmed by scanning electron microscopy measurement which showed white and black strips of two distinct refractive index layers. Finally, the measured reflectance spectra of 1D porous silicon photonic crystals were compared with simulated results.     

Effect of the laser fluence on the surface characterization of β-FeSi2 films prepared by pulsed laser deposition

Single-phase β-FeSi₂ films on silicon (1 0 0) were fabricated by pulse laser deposition. The structure and crystal quality of the samples were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The field scanning electron microscopy showed that the film thickness increases with the increasing of the laser fluence. Moreover, atomic force microscopy observations revealed the changes of surface properties with different laser fluence. Based upon all experimental results, it is found that 7 J/cm² is the most favorable for the formation of β-FeSi₂ thin films.     

Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates

GaN nanowires have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/Cr thin films at 950 °C. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), FT-IR spectrophotometer, scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), and photoluminescence (PL) spectrum were carried out to characterize the microstructure, morphology, and optical properties of GaN samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure and high-quality crystalline, have the size of 30-80 nm in diameter and several tens of microns in length with good emission properties. The growth direction of GaN nanowires is perpendicular to the fringe of (1 0 1) plane. The growth mechanism of GaN nanowires is also discussed in detail.