Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl₂·6H₂O), nickel nitrate hexahydrate (Ni(NO₃)₂·6H₂O), nickel hydroxide hexahydrate (Ni(OH)₂·6H₂O), nickel sulfate tetrahydrate (NiSO₄·4H₂O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 °C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl₂ and Ni(NO₃)₂ precursors. These films have been post-annealed at 425 °C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10⁻² Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.     

Theoretical study of Ni adsorption on the GaN(0 0 0 1) surface

First-principles pseudo-potential calculations within density-functional theory framework are performed in order to study the structural and electronic properties of nickel adsorption and diffusion on a GaN(0 0 0 1)-2×2 surface. The adsorption energies and potential energy surfaces are investigated for a Ni adatom on the Ga-terminated (0 0 0 1) surface of GaN. This surface is also used to study the effect of the nickel surface coverage. The results show that the most stable positions of a Ni adatom on GaN(0 0 0 1) are at the H₃ sites and T₄ sites, for low and high Ni coverage respectively. In addition, confirming previous experimental results, we have found that the growth of Ni monolayers on the GaN(0 0 0 1) surface is possible.     

Tailoring mixed proton-electronic conductivity of BaZrO3 by Y and Pr co-doping for cathode application in protonic SOFCs

BaZr_0.8 − xPr_xY_0.2O_3 − δ (BZPYx, 0.1 ≤ x ≤ 0.4) perovskite oxides were investigated for application as cathode materials for intermediate temperature solid oxide fuel cells based on proton conducting electrolytes (protonic-SOFCs). The BZPYx reactivity with CO₂ and water vapor was evaluated by thermogravimetric and X-ray diffraction analyses, and good chemical stability was observed for each BZPYx composition. Conductivity measurements of BZPYx sintered pellets were performed as a function of temperature and p_O2 in humidified atmospheres, corresponding to cathode operating condition in protonic-SOFCs. Different conductivity values and activation energies were measured depending on the Pr content, suggesting the presence of different charge carriers. For all the compositions, the partial electronic conductivity, calculated from conductivity measurements at different p_O2, increased with increasing the temperature from 500 to 700 °C. Furthermore, the larger the Pr content, the larger the electronic conductivity. BaZr_0.7Pr_0.1Y_0.2O_3 − δ and BaZr_0.4Pr_0.4Y_0.2O_3 − δ showed mostly pure proton and electron conductivity, respectively, whereas the intermediate compositions showed mixed proton/electronic conductivity. Among the two mixed proton/electronic conductors, BaZr_0.6Pr_0.3Y_0.2O_3 − δ presented the larger conductivity, which coupled with its good chemical stability, makes this perovskite oxide a candidate cathode materials for protonic-SOFCs.     

Effect of nickel substitution on defect chemistry, electrical properties, and dimensional stability of calcium-doped yttrium chromite

The effect of nickel substitution on defect chemistry, electrical properties, and dimensional stability of calcium-doped yttrium chromite was studied for use as an interconnect material in high temperature solid oxide fuel cells (SOFCs). The compositions of Y_0.8Ca_0.2Cr_1 − xNi_xO_3 ± δ (x = 0-0.15), prepared using the glycine nitrate process, showed single phase orthorhombic perovskite structures over a wide range of oxygen partial pressures (4.6 × 10^− 20 atm ≤ pO₂ ≤ 0.21 atm at 900 °C). X-ray diffraction (XRD) analysis indicated that most of the nickel ions replacing chromium ions are divalent and act as acceptor dopants, leading to a substantial increase in conductivity. In particular, the conductivity at 900 °C in air increased from 10 S/cm to 34 S/cm with 15% nickel substitution, and an increase in charge carrier density was confirmed by Seebeck measurements, which validated the predominant Ni²⁺ oxidation state. A point defect model was derived, and the relationship between electrical conductivity and oxygen partial pressure was successfully fitted into the proposed model. The defect modeling results indicated that nickel substitution improves the stability of calcium-doped yttrium chromite toward reduction and suppresses the oxygen vacancy formation, which results in significantly increased electrical conductivity in reducing environment. The electrical conductivity of Y_0.8Ca_0.2Cr_0.85Ni_0.15O_3 ± δ at 900 °C in reducing atmosphere (pO₂ = 10^− 17 atm) was 5.8 S/cm, which was more than an order of magnitude higher than that of Y_0.8Ca_0.2CrO_3 ± δ (0.2 S/cm). Improved stability in reducing atmosphere was further confirmed by dilatometry measurements showing reduced isothermal “chemical” expansion, and the isothermal expansion in reducing atmosphere (pO₂ = 10^− 17 atm) at 900 °C decreased from 0.07% for Y_0.8Ca_0.2CrO_3 ± δ to 0.03% for Y_0.8Ca_0.2Cr_0.85Ni_0.15O_3 ± δ. Based on these results, enhanced electrical performance and mechanical integrity is expected with nickel substitution on calcium-doped yttrium chromite in SOFC operating conditions.     

The influence of H2/(H2 + Ar) ratio on microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD

Hydrogenated microcrystalline silicon films were deposited by glow discharge decomposition of SiH₄ diluted in mixed gas of Ar and H₂. By investigating the dependence of the film crystallinity on the flow rates of Ar and H₂, we showed that the addition of Ar in diluted gas markedly improves the crystallinity due to an enhanced dissociation of SiH₄. The infrared-absorption spectrum reveals that the fraction of SiH bonding increases with increasing the rate ratio of H₂/(H₂ + Ar). The surface roughness of the films increases with increasing the flow rate ratio of H₂/(H₂ + Ar), which is attributed to the decrease of massive bombardment of Ar ions in the plasma. Refractive index and absorption coefficient of the films were obtained by simulating the optical transmission spectra using a modified envelope method. Electrical measurements of the films show that the dark conductivity increases and the activation energy decreases with the ratio of H₂/(H₂ + Ar). A reasonable explanation is presented for the dependence of the microstructure and optoelectronic properties on the flow rate ratio of H₂/(H₂ + Ar).     

Spectroscopic characterization, conductivity and relaxation anomalies in the Li2O-MgO-B2O3 glass system: Effect of nickel ions

Glass samples of the system, Li₂O-MgO-B₂O₃ containing different concentrations of nickel oxide (ranging from 0 to 1.0 mol%) were prepared by using the melt quenching technique. The optical absorption studies indicate that the nickel ions occupy both tetrahedral and octahedral positions in the glass network. However, the octahedral positions seem to be dominant when the concentration of nickel oxide is ?0.4 mol% in the glass matrix. When in the octahedral positions, nickel ions occupy the network modifying positions. This has a tremendous effect on the thermoluminescence, electrical conductivity and magnetic susceptibility studies. Electrical measurements were carried out as a function of frequency and temperature over the frequency range of 10-10⁶ Hz and a temperature range of 303-523 K. The electric modulus formalism was applied to study the relaxation behavior by using the impedance data for all the samples at 403 K, and also for analyzing the relaxation behavior of the highest conducting sample (0.4 mol% of nickel oxide) at different temperatures. An attempt has been made to relate the measured properties to the structural modifications in the glass network due to the modifying effect of octahedral Ni²⁺ ions.     

Characterization of YSr2Fe3O8 − δ as electrode materials for SOFC

YSr₂Fe₃O_8 − δ was prepared by traditional solid state reaction method and characterized by X-ray diffraction, ac impedance, dc conductivity, dilatometry and thermogravimetric analysis for possible use in solid oxide fuel cells (SOFCs). YSr₂Fe₃O_8 − δ crystallizes with tetragonal symmetry in the space group P4/mmm and found to be stable at high temperatures under H₂ and air. Four probe dc electrical conductivity measurements show that the conductivity increases up to 745 K and then decreases with temperature; the highest conductivity σ_745K = 43.5 S cm^− 1. The n-type conductivity at low oxygen partial pressure (pO₂) changes to p-type at high pO₂. Polarization behavior was investigated measuring the ac impedance response in symmetrical cell arrangements in air with YSZ and GDC electrolytes. Cathodic area specific resistance (ASR) varies with firing temperature. The lowest area specific resistance was observed with a GDC electrolyte fired at 1000 °C. In case of YSZ, ASR increases and in case of GDC, ASR decreases in air when electrode firing temperature decreases. At 800 °C ASRs are 0.20 Ω cm² and 0.65 Ω cm² with GDC and YSZ electrolytes, respectively, in air. Fuel cell measurements with symmetrical electrodes were performed using a thin YSZ electrolyte under H₂ at anode and air at cathode, show that the power density is about 0.035 W/cm² at 900 °C.     

A stable NH4PO3-glass proton conductor for intermediate temperature fuel cells

A stable and conductive composite material based on NH₄PO₃ and amorphous oxides (SiO₂-P₂O₅) has been prepared by a wet-chemical route following with firing in ammonia. The composite showed high proton conductivity in both ambient air and humidified 5% H₂/Ar. A total conductivity of 6.0-19 mS/cm in the temperature range of 150-250 °C has been achieved. The conductivity (about 19 mS/cm) is stable in humidified 5% H₂/Ar during ageing at 175 °C for over 100 h. This material is a potential electrolyte for intermediate temperature fuel cells and other electrochemical devices.     

Effects of protons and acceptor substitution on the electrical conductivity of La6WO12

Transport properties and non-stoichiometry of La_1−xCa_xW_1/6O₂ and La_1−yW_1/6O₂ (x=0, 0.005, 0.05; y=0.05, 0.1) have been characterized by means of impedance spectroscopy, the EMF-technique, H⁺/D⁺ isotope exchange, and thermogravimetry in the temperature range 300-1200 °C as a function of oxygen partial pressure and water vapor partial pressure. The materials exhibit mixed ionic and electronic conductivities; n- and p-type electronic conduction predominate at high temperatures under reducing and oxidizing conditions, respectively. Protons are the major ionic charge carrier under wet conditions and predominates the conductivity below ∼750 °C. The maximum in proton conductivity is observed for LaW_1/6O₂ with values reaching 3×10⁻³ S/cm at approximately 800 °C. The high proton conductivity for the undoped material is explained by assuming interaction between water vapor and intrinsic (anti-Frenkel) oxygen vacancies.     

Electronic conductivity of pure ceria

The electronic conductivity of pure ceria with two different impurity levels is examined by dc polarization technique based on the Hebb-Wagner ion blocking method. The impurity level for the ceria with 99.999% purity (5N-CeO₂) is about 1/100 of that with 99.9% purity (3N-CeO₂) as confirmed by the fluorescence intensity of impurities obtained by Raman spectroscopy. The electronic conductivity for the 5N-CeO₂ was measured at T = 973 K to 1173 K, and the results are essentially the same as those for the 3N-CeO₂. The electronic conductivity increases with decreasing of P(O₂) following slope values of − 1/4 to − 1/6. The − 1/4 dependent region becomes narrower for the 5N-CeO₂ than that for the 3N-CeO₂. For both types of ceria, the P(O₂) independent region appears in the same region of higher than 10^− 2 and 10^− 3 MPa at T = 1073 K and 973 K, respectively. Activation energies for the 5N-CeO₂ were 2.2 eV, 2.6 eV and 1.9 eV in P(O₂) dependent regions of − 1/6, − 1/4 and 0, respectively.     

Effect of zinc substitution on magnetic and electrical properties of nanocrystalline nickel ferrite synthesized by refluxing method

Nanocrystalline Nickel ferrite (NiFe₂O₄) and Zn substituted nickel ferrite (NiZnFe₂O₄) have been synthesized by the refluxing method. These ferrites were characterized by XRD, TEM, Mossbauer spectroscopy and VSM in order to study the effect of zinc substitution in nickel ferrite. XRD diffraction results confirm the spinel structure for the prepared nanocrystalline ferrites with an average crystallite size of 14-16 nm. Lattice parameter was found to increase with the substitution of Zn²⁺ ions from 8.40 Å to 8.42 Å. TEM images confirmed average particle size of about 20 nm and indicates nanocrystalline nature of the compounds. A shift in isomeric deviation with the doublet was observed due to the influence of Zn substitution in the nickel ferrite. The Zn content has a significant influence on the magnetic behavior and electrical conductivity of NiFe₂O₄. Saturation magnetization drastically increased whereas room temperature electrical conductivity decreased due to the addition of Zn content in NiFe₂O₄, indicating super magnetic material with lesser coercivity.     

Investigations on the thermo-chemical stability and electrical conductivity of K-doped Ba3 − xKxCaNb2O9 − δ (x = 0.5, 0.75, 1, 1.25)

In this paper, we report the synthesis, crystal structure and electrical transport properties of new K-doped Ba₃CaNb₂O₉ (BCN) and investigate their chemical stability in H₂O and pure CO₂ at elevated temperature. The powder X-ray diffraction (PXRD) of Ba_2.5K_0.5CaNb₂O_9 − δ, Ba_2.25K_0.75CaNb₂O_9 − δ, Ba₂KCaNb₂O_9 − δ, and Ba_1.75K_1.25CaNb₂O_9 − δ showed the formation of a single-phase double perovskite (A₃BB^/₂O₉)-like cell with a lattice constant of a ∼ 2a_p (where a_p is a simple perovskite cell of ∼ 4 Å). Perovskite-like structure was found to be retained after treating with CO₂ at 700 °C and also after boiling H₂O for 120 h. The lattice constant of CO₂ and H₂O treated samples was found to be comparable to that of the corresponding as-prepared compound. The total electrical conductivity of all the investigated K-doped BCN increases with increasing K content in BCN in various atmospheres, including air, dry H₂, wet N₂ and wet H₂. The electrical conductivity in dry and wet H₂ atmospheres was found to be higher than that of air in the temperature range of 300-700 °C, while in wet N₂ a slightly lower value was observed. Among the compounds investigated in the present study Ba_1.75K_1.25CaNb₂O_9 − δ showed the highest total electrical conductivity of 1 × 10^− 3 S/cm in dry H₂ at 700 °C with an activation energy of 1.28 eV in the temperature range of 300-700 °C.     

Effect of Ar+ irradiation on the electrical conductivity of BaCe0.9Y0.1O3−δ

The effects of 10 keV Ar⁺ ion irradiation on the electrical characteristics of BaCe_0.9Y_0.1O_2.95 subject to fluences of 0, 1.0 × 10¹⁷, 5.0 × 10¹⁷ and 1.0 × 10¹⁸ ions/cm² at room temperature, has been investigated using elastic recoil detection analysis (ERDA), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS) and alternating current (AC) impedance measurements. It was confirmed from the ERDA results that the hydrogen concentration near the surface increased with increase of Ar⁺ ion fluence. This increase may be associated with the increasing quantities of hydrogen generated by interaction between oxygen vacancies, formed by irradiation, and H₂O from exposure to air. SEM images showed clearly that the number of surface defects due to modification increased with increasing fluence. In addition, the size of the defects showed a tendency to increase with increasing fluence. From the results of XPS analyses, providing information on the electronic states on the surface, it was evident that with increase in the Ar⁺ ion fluence, the quantity of excess oxygen, such as hydroxide, increased in the oxygen 1s XPS spectrum. In addition, it was indirectly found, from decomposition of the Ce 3d, spectrum that the concentration of oxygen vacancies increased with fluence, since the percentage of Ce³⁺ also increased. Accordingly, the surface modification led to the formation of more oxygen vacancies and a greater hydrogen concentration on the surface, since the H₂O interacted with some of them. From the results of the DC conductivity and AC impedance measurements, the proton conductivity was shown to predominate over the temperature range from 473 K to 823 K. It was concluded that the increase in these protons and vacancies generated from surface modification contributed to the increase of proton conductivity.     

Ionic to electronic dominant conductivity in Al2(WO4)3 at high pressure and high temperature

Electrical conduction and crystal structure of Al₂(WO₄)₃ at 400 °C have been studied as a function of pressure up to 5.5 GPa using impedance methods and synchrotron radiation X-ray diffraction, respectively. AC impedance spectroscopy and DC polarization measurements reveal an ionic to electronic dominant transition in electrical conductivity at a pressure as low as 0.9 GPa. Conductivity increases with pressure and reaches a maximum at 4.0 GPa, where the conductivity value is 5 orders of magnitude greater than the 1 atm value. Upon decompression, the conductivity retains the maximum value until the sample is cooled at 0.5 GPa. The high pressure-temperature X-ray diffraction results show that the lattice parameters decrease as pressure increases and the crystal structure undergoes an orthorhombic to tetragonal-like transformation at a pressure ∼3.0 GPa. The change of conduction mechanism from ionic to electronic may be explained by means of pressure-induced valence change of W⁶⁺→W⁵⁺, which results in electron transfer between W⁵⁺-W⁶⁺ sites at high pressure.     

Density functional theory calculations of surface properties and H2 adsorption on the Cu2O (1 1 1) surface

First-principles calculation on the basis of the density functional theory (DFT) and generalized gradient approximation have been applied to study the adsorption of H₂ on the stoichiometric O-terminated Cu₂O (1 1 1), Cu₂O (1 1 1)-Cu_CUS and Cu-terminated Cu₂O (1 1 1) surfaces. The optimal adsorption position and orientation of H₂ on the stoichiometric O-terminated Cu₂O (1 1 1) surface and Cu-terminated Cu₂O (1 1 1) surface were determined and electronic structural changes upon adsorption were investigated by calculating the Local Density of States (LDOS) of the Cu_CUS 3d and Cu_CUS 4s of stoichiometric O-terminated Cu₂O (1 1 1) surface. These results showed that H₂ molecule adsorption on Cu_CUS site parallel to stoichiometric O-terminated Cu₂O (1 1 1) surface and H₂ molecule adsorption on Cu₂ site parallel to Cu-terminated Cu₂O (1 1 1) surface were the most favored, respectively. The presence of surface copper vacancy has a little influence on the structures when H₂ molecule adsorbs on Cu_CSA, O_CUS and O_CSA atoms and the H₂ molecule is only very weakly bound to the Cu₂O (1 1 1)-Cu_CUS surface. From the analysis of stoichiometric O-terminated Cu₂O (1 1 1) Local Density of States, it is observed that Cu_CUS 3d orbital has moved to a lower energy and the sharp band of Cu_CUS 4s is delocalized when compared to that before H₂ molecule adsorption, and overlapped substantially with bands due to adsorbed H₂ molecule. The Mulliken charges of H₂ adsorption on Cu_CUS site showed that H₂ molecule obtained electron from Cu_CUS which was consistent with the calculated electronic structural changes upon H₂ adsorption.     

DC conductivity of silver vanadium tellurite glasses

The mixed electronic-ionic conduction in 0.5[xAg₂O-(1−x)V₂O₅]-0.5TeO₂ glasses with x=0.1-0.8 has been investigated over a wide temperature range (70-425 K). The mechanism of dc conductivity changes from predominantly electronic to ionic within the 30?mol% Ag₂O?40 range; it is correlated with the underlying change in glass structure. The temperature dependence of electronic conductivity has been analyzed quantitatively to determine the applicability of various models of conduction in amorphous semiconducting glasses. At high temperature, T>θ_D/2 (where θ_D is the Debye temperature) the electronic dc conductivity is due to non-adiabatic small polaron hopping of electrons for 0.1?x?0.5. The density of states at Fermi level is estimated to be N(E_F)≈10¹⁹-10²⁰ eV⁻¹ cm⁻³. The carrier density is of the order of 10¹⁹ cm⁻³, with mobility ≈2.3×10⁻⁷-8.6×10⁻⁹ cm² V⁻¹ s⁻¹ at 300 K. The electronic dc conductivity within the whole range of temperature is best described in terms of Triberis-Friedman percolation model. For 0.6?x?0.8, the predominantly ionic dc conductivity is described well by the Anderson-Stuart model.     

Preparation of pulse plated GaAs films

Thin GaAs films were prepared by pulse plating from an aqueous solution containing 0.20 M GaCl₃ and 0.15 M As₂O₃ at a pH of 2 and at room temperature. The current density was kept as 50 mA cm⁻² the duty cycle was varied in the range 10-50%. The films were deposited on titanium, nickel and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40 eV. Photoelectrochemical cells were made using the films as photoelectrodes and graphite as counter electrode in 1 M polysulphide electrolyte. At 60 mW cm⁻² illumination, an open circuit voltage of 0.5 V and a short circuit current density of 5.0 mA cm⁻² were observed for the films deposited at a duty cycle of 50%.     

2D compound formation during copper dissolution: An electrochemical STM study

The reversible formation of a 2D-CuI film on Cu(1 0 0) is studied by means of cyclic voltammetry in combination with electrochemical scanning tunneling microscopy.Exposing the Cu(1 0 0) electrode surface to an acidic and iodide containing electrolyte (5 mM H₂SO₄/1 mM KI) leads to the formation of a well ordered c(p × 2)-I adsorbate layer at potentials close to the onset of the anodic copper dissolution reaction. Copper dissolution starts at slightly more positive potentials preferentially at step edges in the presence of the iodide adlayer via the removal of copper material from kink sites at step edges. This increase of mobile Cu⁺ ions causes the local exceeding of the CuI solubility product (pKL = 11.3), thereby giving rise to the nucleation and growth of a laterally well ordered 2D-CuI film. Key structural motifs of the growing CuI film are closely related to the (1 1 1) plane of bulk CuI. Quite intriguing, the 2D-CuI film does not act as a passive layer. Copper dissolution proceeds even in the presence of this binary compound via an inverse step flow mechanism.     

Sinteractivity, proton conductivity and chemical stability of BaZr0.7In0.3O3-δ for solid oxide fuel cells (SOFCs)

In³⁺ was used as dopant for BaZrO₃ proton conductor and 30 at%-doped BaZrO₃ samples (BaZr_0.7In_0.3O_3-δ, BZI) were prepared as electrolyte materials for proton-conducting solid oxide fuel cells (SOFCs). The BZI material showed a much improved sinteractivity compared with the conventional Y-doped BaZrO₃. The BZI pellets reached almost full density after sintering at 1600 °C for 10 h, whereas the Y-doped BaZrO₃ samples still remained porous under the same sintering conditions. The conductivity measurements indicated that BZI pellets showed smaller bulk but improved grain boundary proton conductivity, when compared with Y-doped BaZrO₃ samples. A total proton conductivity of 1.7 × 10⁻³ S cm⁻¹ was obtained for the BZI sample at 700 °C in wet 10% H₂ atmosphere. The BZI electrolyte material also showed adequate chemical stability against CO₂ and H₂O, which is promising for application in fuel cells.     

Influence of heat treatment on tribological properties of electroless Ni-P and Ni-P-Al2O3 coatings on Al-Si casting alloy

Evolution of tribological properties of electroless Ni-P and Ni-P-Al₂O₃ coating on an Al-10Si-0.3Mg casting alloy during heat treatment is investigated in this work. The pre-treated substrate was plated using a bath containing nickel hypophosphite, nickel lactate and lactic acid. For preparation of fiber-reinforced coating Al₂O₃ Saffil fibers pre-treated in demineralised water were used. The coated samples were heat treated at 400-550 °C/1-8 h. Tribological properties were studied using the pin-on-disc method. It is found that the best coating performance is obtained using optimal heat treatment regime (400 °C/1 h). Annealing at higher temperatures (450 °C and above) leads to the formation of intermetallic compounds that reduce the coating wear resistance. The reason is that the intermetallic phases adversely affect the coating adherence to the substrate. The analysis of wear tracks proves that abrasion is major wear mechanism, however due to the formed intermetallic sub-layers, partial coating delamination may occur during the pin-on-disc test on the samples annealed at 450 °C and above. It was found that fiber reinforcement reduces this scaling and increases wear resistance of coatings as compared to the non-reinforced Ni-P coatings.