氧化铝纳米线的制备及其形成机理

采用二次铝阳极氧化技术, 制备高度有序的铝阳极氧化膜(AAO模板). 经X射线衍射(XRD)分析, 模板为无定形结构. 将模板放入腐蚀液中, 可获得大量无定形结构的氧化铝纳米线. 模板在800 ℃下退火4 h后, 变为γ-Al2O3结构, 采用类似腐蚀液溶解模板, 得到大量γ-Al₂O₃纳米线. 研究了腐蚀液种类、腐蚀时间和模板晶体结构等因素对生成氧化铝纳米线的影响, 并利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和XRD对纳米线的形貌与结构进行了表征. 结果表明, 在多种腐蚀液中, 均可获得氧化铝纳米线; 随着腐蚀时间的增加, 纳米线的长度增加, 直径变小, 长径比增大; 氧化铝纳米线的晶体结构与所采用模板的晶体结构一致. 此外, 还采用原子力显微镜(AFM)和SEM对AAO膜的表面形貌及其结构特点进行了详细的观测, 并以此为基础讨论了氧化铝纳米线的形成机理, 认为AAO模板本身存在的花状微结构是形成纳米线的内因, 花瓣间的凹陷部位首先被腐蚀断裂, 形成氧化铝纳米线.     

银纳米线的TEM表征

通过交流电沉积的方法,以多孔铝阳极氧化膜（Al2O3/Al）为模板,制备金属银纳米线.透射电子显微镜（TEM）分析表明, 银纳米线长度平均约为5 μm, 直径25 nm；银纳米线在多孔Al2O3/Al孔内互相平行,显示凸凹相间的条纹结构.选区电子衍射（SAED）证实,银纳米线具有面心立方（FCC）的多晶结构,探讨了银纳米线凸凹相间条纹结构的形成机理.     

聚吡咯纳米阵列电极的光电化学

以多孔的铝阳极氧化膜(AAO)为模板制备了直径约为80 nm聚吡咯(PPy)纳米线的阵列电极, 并研究了它的光电化学响应. 结果表明, 在电极电位低于－0.1 V(vs Ag/AgCl)时出现的阴极光电流是由聚吡咯纳米线的p型半导体性质引起的, 其平带电位为－0.217 V. 聚吡咯纳米线的长度对光电流的影响较大, 最佳长度为42 nm. 这是因为在很短的聚吡咯纳米线阵列中PPy太少, 产生的光电流弱, 而在过长的聚吡咯纳米线阵列中光生电子在到达电极基底前易于与光生空穴复合而消失. 聚吡咯纳米线有可能作为纳米光电器件用于未来微器件系统.     

双槽法电沉积Cu/Ni多层纳米线有序阵列

以多孔阳极氧化铝（AAO）为模板，采用双槽法电沉积工艺制得高度有序的Cu/Ni多层纳米线阵列。利用扫描电镜（SEM）和透射电镜（TEM）对Cu/Ni多层纳米线进行了表征，观察到纳米线表面平滑，多层结构清晰，各子层厚度均匀，直径约为 100 nm，与AAO模板孔径基本一致。由选区电子衍射（SAED）照片可知，多层纳米线中Cu层和Ni层均为单晶结构。振动样品磁强计（VSM）测试结果表明，Cu/Ni多层纳米线阵列具有明显的垂直磁各向异性，外加磁场垂直和平行于AAO模板表面时，磁滞回线的矩形比分别为 0.701 和 0.101 ，矫顽力分别为 589 Oe和 202 Oe。通过控制铝阳极氧化工艺及电沉积时间，可获得不同直径、不同子层厚度的Cu/Ni多层纳米线阵列。     

电化学法制备Ni-W-P纳米线阵列电极及其催化析氢性能

采用二次氧化法制备了多孔阳极氧化铝(AAO)模板, 通过控制电位沉积技术在AAO模板内组装了Ni-W-P合金纳米线阵列. 在扫描电子显微镜(SEM)下观察到Ni-W-P纳米线表面光滑, 长约20 μm, 直径均匀(约为100 nm), 与AAO模板孔径基本一致. 阴极极化曲线和交流阻抗图谱(EIS)的测试结果表明, Ni-W-P合金纳米线阵列电极析氢反应(HER)电阻减小, 具有更高的催化析氢活性, 电流密度为10 mA·cm^-2时, 析氢极化电位较Ni-W-P合金电极正移约250 mV.     

ZnO-聚苯胺同轴纳米线及其列阵的制备和表征

以阳极氧化铝膜 (AAO)作模板 ,制备聚苯胺 (PANI)纳米管和PANI纳米管列阵 ;同时利用溶胶_凝胶法制备ZnO_PANI同轴纳米线和同轴纳米线列阵 .PANI纳米管和ZnO_PANI同轴纳米线的形貌通过透射电子显微镜表征 .PANI纳米管的外径约 3 0nm ,内径约 1 0nm ;ZnO_PANI同轴纳米线直径约 60nm .实验发现 ,较之ZnO纳米线 ,同轴AAO模板中纳米线列阵的可见光发射谱带兰移 ,强度显著增强 ,这可能和PANI链上的NH基团与表面Zn2 +离子之间的相互作用有关 ,以及由于ZnO纳米微粒在PANI上富集、PANI的光生载流子部分转移给ZnO微粒所致 .实验还发现分散在NaOH溶液中的同轴纳米线 ,其可见光发射谱带比AAO模板中同轴纳米线的谱带兰移更甚     

贫水电解质体系制备多孔阳极氧化铝模板的研究

在有机溶剂为主的含草酸电解质中,研究了大孔径有序度高的阳极氧化铝(AAO)的一步法电化学制备.实验证实,电解质中水含量的降低能够有效抑制铝的电氧化速率和溶解速率,使得其氧化膜孔道的生长能够稳定进行,所得到的六方孔道排列有序度明显高于纯水溶剂制备的电解质体系下的产物.考察了水含量、有机溶剂种类以及电解质浓度对AAO模板孔道形貌的影响.结果表明,有机溶剂贫水电解质体系使得电氧化电压的选取范围比水溶液电解质体系更宽,孔径连续可调,反应条件温和.该方法适合于制备均匀大孔径的AAO模板.     

溶胶-凝胶模板法合成SmFeO3纳米线

通过阳极氧化在质量分数为0.3 mol·L^-1草酸溶液中制得多孔氧化铝膜。经5%（质量分数）的磷酸扩孔处理得到具有孔径大小均一,排列有序,并具有一定厚度的阳极氧化铝模板（AAO）。用溶胶-凝胶法在氧化铝模板中制备了直径约为50 nm的有序SmFeO3纳米线阵列。用扫描电镜（SEM）、透射电镜（TEM）和X射线衍射仪（XRD）对SmFeO3纳米线的形貌、结构以及相组成进行了分析。结果发现：纳米线的长度受控于氧化铝模板的厚度,直径与氧化铝模板的孔径相等。同时分析了纳米线的形成机制。     

纳米金属多层膜与多层纳米线的电化学制备及其表征

分别采用单槽法和双槽法电沉积Cu/Co多层膜.研究了两种电沉积方法制备多层膜的工艺条件,利用电化学方法、XRD和SEM对多层膜进行表征,并对Cu/Co多层膜的巨磁阻性能进行了测试. 采用电沉积多层膜的方法，以多孔铝阳极氧化膜（AAO）为模板,在纳米孔内沉积Cu/Co多层线,采用TEM对多层纳米线进行了表征.     

Cu/PAA复合膜的偏振特性

应用扩孔和增大阳极氧化电压的方法制备了不同孔径的多孔铝模板,并以交流电沉积法在该模板沉积铜纳米线.测量了铜/多孔铝复合膜的透射光谱和偏振光谱.实验表明,扩孔和增加阳极氧化电压都使样品的透射率下降,但扩孔不能提高它的偏振性能;提高模板氧化电压则可以提高样品的消光比,且消光比随纳米线直径的增加而增加.     

大面积Bi单晶纳米线阵列的制备

在有序的氧化铝模板(AAO)的孔洞中, 采用电化学沉积工艺成功地制备了准金属Bi纳米线有序阵列. 使用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)及高分辨电子显微镜(HRTEM)对样品的结构和形貌进行了表征. XRD结果表明, 所制备的铋样品为六方相, 且沿[110]方向有很好的生长取向; FE-SEM图片清晰地说明铋纳米线阵列是大面积、填充率高和高度有序的; TEM的结果显示纳米线直径均匀、表面光滑且长径比大; HRTEM图片中清晰的晶格条纹和选区电子衍射(SAED)结果表明纳米线是单晶.     

Synthesis and characterization of indium-doped ZnO nanowires with periodical single-twin structures

In-doped ZnO (IZO) nanowires have been synthesized by a thermal evaporation method. The morphology and microstructure of the IZO nanowires have been extensively investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The products in general contain several kinds of nanowires. In this work, a remarkable type of IZO zigzag nanowire with a periodical twinning structure has been investigated by transmission electron microscopy (TEM). HRTEM observation reveals that this type of IZO nanowire has an uncommonly observed zinc blend crystal structure. These nanowires, with a diameter about 100 nm, grow along the [111] direction with a well-defined twinning relationship and a well-coherent lattice across the boundary. In addition, an IZO nanodendrite structure was also observed in our work. A growth model based on the vapor-liquid-solid mechanism is proposed for interpreting the growth of zigzag nanowires in our work. Due to the heavy doping of In, the emission peak in photoluminescence spectra has red-shifted as well as broadened seriously.     

Size-dependent orientation growth of large-area ordered Ni nanowire arrays

Large-area ordered Ni nanowire arrays with different diameters have been fabricated by the direct current electrodeposition into the holes of porous anodic alumina membrane. The crystal structure and micrograph of nanowire arrays are characterized by X-ray diffraction, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. The results indicate that the growth orientation of Ni nanowires turns from [110] to [111] direction with increasing diameters of nanowires. The mechanism of the growth was discussed in terms of interface energy minimum principle. The size-dependent orientation of Ni nanowire arrays has the important significance for the design and control of nanostructures.     

CdSe纳米线阵列的制备及其表征(英)

通过在含有SeSO₃^2-和Cd²⁺的室温水溶液中，用模板-电沉积法在纳米孔阵列阳极氧化铝膜(AAM)模板中制备了高有序性的CdSe纳米线阵列，并对其形貌、结构和组分进行了表征。扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果表明，纳米线阵列中的CdSe纳米线具有相同的长度和直径，分别对应于使用的AAM模板的厚度和孔径；X-射线衍射(XRD)和X-射线能谱(EDAX)结果表明，CdSe纳米线中Cd和Se的化学组成非常接近于1∶1，其结构为立方CdSe。另外，对模板-电沉积法制备CdSe纳米线的机理进行了讨论。     

Synthesis of ordered Al nanowire arrays

Ordered Al nanowire arrays with the same nanowire density but the diameters decrease radially embedded in one piece of anodic alumina membranes were successfully fabricated by two-step synthesis: electrodeposition of Zn and replacement in AlCl₃ solution. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected-area electron diffraction techniques were used to characterize the Al nanowires obtained. SEM and TEM images taken from the different areas of Al nanowire arrays show that we can control the growth of aligned Al nanowires with different diameters in a single process at the same time. The investigation results not only have potential applications in photoelectric devices but also open up a new method for fabricating nano-scale materials.     

铅纳米线阵列的制备

使用电化学沉积方法,在有序的氧化铝模板(AAO)孔洞中制备了铅纳米线有序阵列。用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)对样品的结构、形貌、进行表征和观测。XRD的结果表明所制备的样品为纯的立方面心铅,且纳米线生长沿<220>有很好的取向。FE-SEM的图片清晰地说明铅纳米线阵列是大面积、高填充率和高度有序的。TEM的结果显示纳米线直径均匀、表面光滑且长径比大。     

离子液体中电沉积制备钴纳米线阵列

Porous anodic alumina (PAA) was used as a template to prepare Co nanowires array from 1-ethyl-3-methylimidazolium chloride ionic liquid by direct current method. The surface morphology of porous anodic alumina template was observed by field emission-scanning tunneling microscopy (FE-SEM) before and after the electrodeposition of Co nanowires. The electrodeposition of Co nanowires was characterized by transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). TEM results indicate that the Co nanowire surface is coarse and porous when aqueous solution was used as electrolyte， and the Co nanowire deposited from the ionic liquid is uniform and smooth. XRD results show that the electrodeposition of Co is a mixture of crystal and microcrystal phase.     

醇热法合成单晶银纳米线及其表征

以硝酸银为前驱物, 聚乙烯醇缩丁醛(PVB)为结构导向剂, 通过醇热法, 反应温度为140 ℃, 反应时间为24 h的条件下制备了银纳米线. 采用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、热重分析(TG)、红外光谱(FT-IR)和激光拉曼光谱(Raman)等手段对产物进行了系统表征, 结果表明: 所得银纳米线具有面心立方结构, 沿着(111)晶面生长, 具有单晶结构; 考察了反应温度和时间对产物形貌的影响, 结果表明: 反应温度和时间在形成银纳米线的过程中起着关键的作用; 银纳米线具有较强的表面增强拉曼散射效应; 同时提出了银纳米线可能的晶化机理.     

Structural, magnetic, and magnetoresistive properties of electrodeposited Ni5Zn21 alloy nanowires

Ni5Zn21 alloy nanowires were fabricated through template-assisted electrochemical deposition method. The morphology and microstructures of as-deposited nanowires were determined by field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), electron diffraction (ED), and electron probe microanalysis (EPMA). The accurate composition was measured via induced coupling plasma atomic emission spectroscopy. SEM results show that Ni5Zn21 nanowires are deposited in most of the nanopores of the template, and they are continuous and dense throughout the whole length. The XRD result demonstrates that the nanowires are mainly composed of a cubic gamma phase Ni5Zn21 alloy, but there also exists a trace of Zn-rich eta phase. HRTEM and ED reveal that the alloy nanowires are polycrystalline with the crystallite size of several tens of nanometers. EPMA of a single nanowire illustrates that there exist Ni-rich microzones in as-deposited nanowires. Subsequent magnetic measurements of the array also confirmed the existence of them. In addition, it can be further inferred that the shape of Ni-rich microzones is probably barlike or disklike, from the anisotropy of zero field cooling/field cooling (ZFC/FC) curves as well as the vortex magnetization behavior of the Ni5Zn21 nanowire array. The low-temperature magnetoresistance of the Ni5Zn21 nanowire array was also measured. Giant magnetoresistance instead of anisotropic magnetoresistance is suggested to be responsible for contributing to the magnetoresistance.     

金纳米线阵列制备及其光谱特性

利用电化学沉积方法在重离子径迹模板中制备出直径从45 nm到200 nm, 长径比达700的金纳米线阵列, 利用扫描电子显微镜(SEM)和X射线衍射(XRD)对所制备金纳米线的形貌及晶体结构进行分析, 结果表明, 在1.5 V(无参比电极)沉积电压下所制备出的直径为200 nm金纳米线沿[100]晶向具有较好择优取向. 利用紫外-可见光谱(UV-Vis)对镶嵌在透明模板中平行排列的金纳米线阵列光学特性进行研究, 发现金纳米线直径为45 nm时, 其紫外可见光谱在539 nm处有强烈吸收峰, 随着金纳米线直径增加, 吸收峰红移, 当金纳米线直径达到200 nm时, 其吸收峰峰位移至700 nm. 结合金纳米颗粒相关表面等离子体共振吸收效应对实验结果进行了讨论.