纳秒脉冲下微堆层绝缘子的真空沿面闪络特性

 为满足脉冲功率系统高性能、小型化的应用需求,设计并制作了聚酰亚胺膜为介质层、黄铜为金属层及聚全氟乙丙烯膜为介质层、不锈钢膜为金属层2种方案的微堆层绝缘子。基于Marx发生器及单同轴脉冲形成线的纳秒脉冲真空实验平台,对微堆层绝缘子的真空沿面闪络性能进行了测试。为了精确标定测量系统,利用输出脉冲幅值约20 kV的磁脉冲压缩电源对测量系统进行了标定,得到的分压比为25 133∶1。对2种方案微堆层试样的测试结果表明,闪络发生在电压上升期间,最大真空沿面闪络场强接近180 kV/cm。     

介质壁加速器高梯度绝缘子研制

与普通绝缘子相比,高梯度绝缘子(HGI)的金属层与绝缘介质层交替排列结构可以抑制真空沿面闪络过程,从而提高沿面闪络场强。使用不同绝缘介质材料和金属材料采用不同加工制备工艺制备的HGI样品其沿面闪络场强差别较大。对所制备的绝缘介质层分别为聚酰亚胺、交联聚苯乙烯和尼龙,金属层为不锈钢箔,形状分别为圆柱与圆环型的HGI样品进行了真空沿面耐压测试,并对相同尺寸的纯绝缘介质样品进行了对照实验,得到了不同材料不同制备工艺HGI样品的耐压性能差异。结合样品表面显微照片观察得到的样品表面状况,分析了影响样品沿面闪络场强的因素。     

真空中A-B-A绝缘结构的电场分析

提出了一种变插入层电导率和介电常数的三层(A-B-A)绝缘结构。分析了插入层(A)电导率和介电常数对三层绝缘结构真空-绝缘子-阴极三结合点处和真空-插入层绝缘子(A)-主绝缘子(B)三结合点处电场的影响,结果发现通过控制插入层电导率和介电常数可以有效降低真空-绝缘子-阴极三结合点处的电场又不至于使真空-插入层绝缘子-主绝缘子三结合点处电场过高。考虑了介质表面带电的情况,分析插入层介质表面带不同极性电荷对真空-绝缘子-阴极和真空-插入层绝缘子-主绝缘子两个三结合点电场分布的影响。估计了三层绝缘结构真空沿面闪络电压的变化趋势,发现在插入层电导率或介电常数不断增大时,真空沿面闪络电压会呈现先上升后下降,最后趋于稳定。     

高梯度绝缘子的实验研究与性能分析

为解决脉冲功率系统中绝缘部件的真空沿面闪络问题,开发了基于二次电子崩理论的层叠式高梯度绝缘材料。利用全金属超高真空分析系统,对高梯度绝缘子的真空出气特性进行检测;利用四极质谱仪,对高梯度绝缘子真空出气的气体成分进行分析。利用阻抗分析仪测试不同结构绝缘材料的高频介电性能。基于纳秒脉冲真空实验平台,对高梯度绝缘子的真空沿面闪络性能进行测试。研究结果表明:高梯度绝缘子具有良好的高频介电性能,其拐点频率高达200 MHz;锻炼后高梯度绝缘子的闪络场强可达190 kV/cm,其闪络性能和高梯度绝缘结构中绝缘层的材料及绝缘层与金属层的比例直接相关。     

环氧树脂基真空绝缘材料的制备和性能测试

 介绍了一种用于脉冲功率装置真空绝缘子的环氧树脂基复合材料的研制机理、制备过程和典型性能。初步测试结果表明,添加一定量的水合氧化铝颗粒可以使环氧树脂材料的表面电阻率由5×10¹⁶ Ω降低为6×10¹¹ Ω,这一特性有利于释放由于沿面闪络等原因沉积在真空绝缘子表面的电荷,从而使材料在脉冲电压下的沿面闪络电压有所提高,实验得到在上升沿400 ns的脉冲电压作用下, 沿面闪络电压可从17 kV 提高到 28 kV。     

表面改性对绝缘子真空沿面闪络特性的影响

在不同温度下对交联聚苯乙烯绝缘子进行了表面氟化处理,在脉宽0.5μs的脉冲电压下对绝缘子的真空沿面闪络性能进行测试。结果表明:在50~60℃下对交联聚苯乙烯进行表面氟化能将绝缘子沿面闪络电压提高40%~60%。通过在绝缘子表面层规律地嵌入多个薄膜导电层,制备了新型结构的高梯度绝缘子,新型高梯度绝缘子沿面闪络电压较相同材料的普通绝缘子提高40%~50%,并保持了较好的力学及加工性能。     

激光触发真空沿面闪络开关的初步实验研究

 介绍了沿面闪络开关的发展状况和基本原理，实验研究了真空条件下激光触发介质沿面闪络特性。实验采用固体Nd:YAG纳秒激光器作为触发源，对试样施加正直流高压，电压范围1～6 kV，试样绝缘子为直径50 mm的尼龙6。通过研究不同激光能量、波长和聚焦形状对介质闪络的影响，总结出适用于沿面闪络开关的激光触发形式。实验表明：在一定电场和真空度下闪络的时延和抖动将随着输入激光能量的提高而减小，而激光可触发的电压范围将提高；激光波长减小有助于提高触发的稳定性；激光焦斑的形状是沿面闪络触发的最大影响因素，采用具有一定能量密度、焦斑横跨两电极的带状激光来触发闪络是闪络开关的理想选择。     

纳秒脉冲下高气压SF6中同轴绝缘子沿面闪络影响因素实验研究

研究纳秒脉冲下的绝缘子沿面闪络影响因素对电磁脉冲模拟装置绝缘结构设计具有重要的借鉴意义。通过搭建绝缘子沿面闪络实验平台,实验研究了在0.5 MPa的SF6气体中,脉冲电压波形、绝缘材料和绝缘子沿面场强分布对绝缘子沿面闪络电压的影响。结果表明：绝缘子的闪络电压具有随着脉冲前沿时间减小而增加的趋势;相较于脉冲电压全波,绝缘子在脉冲电压前沿波形耐受下闪络电压较高;聚酰亚胺材料的绝缘性能最好;通过降低绝缘子沿面最大场强,改善电场分布可以有效地提高绝缘子的闪络电压。     

辉光放电预处理对聚酰亚胺绝缘子真空沿面闪络电压的影响

为提高绝缘子的真空沿面闪络电压,采用氩气下辉光放电对绝缘子进行处理,研究了辉光放电频率、放电电流大小和处理时间对绝缘子真空闪络电压的影响。结果表明,辉光放电能极大提高绝缘子的真空闪络电压。未处理的绝缘子真空闪络电压为55 kV左右;经高频辉光放电预处理40 min后,绝缘子真空闪络电压达到100 kV;经工频辉光放电预处理40 min后,绝缘子真空闪络电压可达125 kV,高出高频下25 kV;同时,辉光放电电流（数十mA）越大,处理后的绝缘子真空闪络电压越高,但随着辉光放电电流的增大,闪络电压的增加幅度趋于饱和。     

表面喷砂对有机玻璃沿面闪络性能影响

绝缘子表面粗糙处理是提升其沿面闪络性能的重要途径,表面粗糙化处理方式不当,极易带来表面结构不均匀,难以获得稳定耐压性能的绝缘材料。为提升绝缘子表面粗糙处理的均匀性,本文利用表面喷砂技术对圆柱形有机玻璃(PMMA)绝缘子进行了粗糙化处理研究,以球形二氧化硅(SiO2)颗粒为工作介质,研究了不同喷砂粒径、氢氟酸后处理等因素对绝缘材料表面形貌和组分的影响,并利用短脉冲高压测试平台对喷砂处理前后有机玻璃绝缘子样品进行了真空沿面闪络性能测试。研究结果表明,喷砂处理在有机玻璃表面形成了较为均匀的凹坑,HF酸能够有效去除表面残留的SiO2颗粒,具有表面喷砂粗糙结构的绝缘子沿面闪络电压得到了稳定提升,相较于未处理的绝缘子闪络电压提升了约80%。     

介质壁加速器尾场阻抗的模拟计算

为了研究尾场效应引起的束流不稳定性,建立了由非对称Blumlein脉冲形成线、导体层和微堆层构成的介质壁加速器单元模块模型,用有限积分法对强流电子束在此结构中产生的尾场进行了计算,分别计算单组元和2组单元加速模块中的尾场势和尾场阻抗。从模拟的结果来看,x,y方向的尾场势和尾场阻抗都很小,束流尾场对横向的影响比较小。z方向的尾场势和尾场阻抗影响较大,尾场阻抗达到100Ω量级。证明了由于介质壁加速器结构在加速腔长度和束流通过路径的连续性方面都具有很大的优势,横向阻抗小,束流尾场效应在束流不稳定性方面的影响相对较小,束流传输时的要求也会降低。     

Surface and electrical properties of organic-inorganic hybrid structure as gate insulator to organic thin film transistor

Carbon-based OTFT devices were fabricated using a plasma process for the gate electrode and gate insulators. A nanocrystalline carbon (nc-C) film was used as the gate electrode, and three different layers, cyclohexene, diamond-like carbon (DLC), and cyclohexene/DLC (hybrid insulator), were used as the gate insulator. The surface and electrical properties of the three different gate insulators on the nc-C gate electrode were investigated using the SPM method, and the leakage current density and dielectric constant of the metal-insulator-metal (MIM) structures with three different insulator layers were evaluated. The hybrid insulator layer had a very smooth surface, approximately 0.2 nm, a uniform surface without defects, and good adhesion between the layers. Overall, it is believed that the hybrid insulator lead to a decrease in the electrical leakage current and an improvement in the device performance.     

Investigation of the charge distribution in the insulating envelope of a high-voltage vacuum device

Methods of measuring charges in the bulk and at the surface of the insulating envelope of a high-voltage vacuum device are developed as part of studies of a complex range of dielectric strength aspects. These methods were used to measure the charge distribution over the length of the envelope and to study how this distribution is influenced by the operating regimes of the device. Laws governing the formation of charges were identified and its correlation with the appearance of physical changes in the structure of the surface layers of the insulator was determined. Processes of structural change were studied and simulated and the change in the dielectric strength of the device was compared with changes in the magnitude and polarity of the surface and bulk charges. Zh. Tekh. Fiz. 69, 30–35 (June 1999)     

Design of correction electrodes for high-voltage vacuum-dielectricinterfaces

High-voltage vacuum insulators often set the limits on energy transfer in pulsed power systems. The ideal vacuum interface has a uniform electric field distribution on the insulator well below breakdown levels and an impedance matched to the pulse generator. This paper describes a procedure to design correction electrodes for the dielectric region of a cylindrical interface using a numerical field solution code. The approach has application to both pulsed and steady-state systems. The method is illustrated with a design for a 10 TW, 6.5 MV pulsed power generator using six correction electrodes. The design minimizes the interface impedance and gives less than 10% field variation along the insulator surface     

Analysis on surface charging of insulator prior to flashover in vacuum

Prior to the flashover across an insulator in vacuum, the insulator surface is usually charged. It is of great importance to investigate the charging phenomena for better understanding the flashover characteristics. It is considered that there are two kinds of mechanisms closely related to the surface charging of insulator i.e., the secondary electron emission occurred over an insulator, and while employing a perfect electrode contact ahead of electron emission into vacuum, the charge injection and accumulation occurred inside the surface layer of an insulator. Based on the rigorous analysis of the kinetic processes of both primary and secondary electrons, the related surface charges were theoretically deduced. Involving the detrapping of charges trapped and the recombination of charges injected, the charging process due to charge injection and accumulation was analyzed. Some formulas were given to express the density of surface charges.     

Effect of stacked dielectric with high dielectric constant and surface modification on current enhancement in pentacene thin-film transistors

The effect of a stacked dielectric has been studied on pentacene thin-film transistors (TFTs) with respect to the current enhancement, the crystalline polymorph, and the structural change of the film. Here we show that the performance improvement of the device is successfully achieved by the dielectric effects of the high dielectric constant and the surface modification in hybrid dielectric configuration. The systematic analysis on the device feature governed by the interfacial property was carried out for a hybrid structured insulator system using SiO₂ and cross-linked (C-L) polyvinyl alcohol (PVA), including the surface modified layer of dilute polymethyl methacrylate (PMMA). Through thickness combinations of bilayer dielectrics with low-k SiO₂ and high-k PVA, the device also exhibits noticeable enhancement of the current drivability up to the current level of 94 μA at a practical gate bias of ?30 V. Moreover, we present the effect of a surface-modified layer with dilute PMMA. After the formation of ultra-thin PMMA layer in a bilayer insulator, the organic dielectric shows an effectively changed surface property into hydrophobicity even on a strong hydroxyl-rich dielectric surface, resulting in the distinct increase of structural order in the film due to the reduction of surface free energy.