Very low energy electron reflection at Cu(001) surfaces

Measurements of the coefficient of elastic reflection of very low energy electrons at Cu(001), Cu(001) (2 × 4)45°O and Cu(001)c(2 × 2)N surfaces are reported. The measurements refer to normally-incident electrons with kinetic energies E in the range 0.5–22 eV. The elastic reflection coefficient R_el was determined from separate observations of the total reflection coefficient and of the energy distribution of reflected electrons. For Cu(001) R_el is 0.55 at E = 0.5 eV and drops monotonically to 0.03 with increasing E, the maximum slope being at E = 3 eV. Theoretical calculations of R_el are reported. The reflection amplitude of the substrate crystal was parameterized using existing results of accurate band structure calculations, and the surface scattering matrix was evaluated for assumed surface scattering potentials. It is shown that to fit the observed R_el it is necessary to take account of both the image potential and the extension of the imaginary part of the crystal scattering potential into vacuum. From the fit, the range of the imaginary potential is 1.0 Å. For Cu(001) (2 × 4)45°O and Cu(001)c(2 × 2)N the values of R_el at E = 0.5 eV were 0.35 and 0.15, respectively. The effect of adsorption in reducing R_el is especially marked for E < 2 eV. Adsorption of either O or N results in an additional peak in R_el near E = 12 eV.     

Vibrational predissociation of SF6 dimers and trimers

IR photo-dissociation spectra of SF₆ clusters have been studied. A He-seeded molecular beam has been attenuated by crossing it with a line tunable cw CO₂ laser of moderate power. — In the electron bombardment beam ionizer (E _el=100eV) small neutral clusters are found to fragment predominantly to the main monomer mass (SF ₅ ⁺ ). — Predissociation spectra have been calculated for clusters containing up to six SF₆-molecules invoking the dipole-dipole resonance force to lift the degeneracy of the molecule — excited molecule interaction. On the basis of these spectra, dimer and trimer concentrations have been determined quantitatively, for different molecular beam conditions.     

Effect of an ac field on the conductance fluctuations for mescoscopic systems

With the use of perturbation theory to perform impurity averaging, the conductance fluctuations (CF) in mesoscopic systems are evaluated at finite frequency (ω) of the applied electric field. Calculations are carried out for frequencies much smaller than the inverse elastic mean free time, ω≪τ_el⁻¹. It is shown that the CF decrease monotonically as ω increases. Also, the frequency scale over which this decrease occurs is given by τ_diff⁻¹≪τ_el⁻¹, where τ_diff is the time for an electron to diffuse across the sample. This means that the universality of the CF at zero frequency is not preserved at finite frequency. These calculations are for a rectangular prism. Six leads covering the probe faces are attached to the cube. It is also shown that at finite frequency the sample-to-sample CF have the same size as the fluctuations of a given sample as a function of frequency.     

The influence of crystal orientation on the electron energy loss spectrum of monocrystalline silver films

In electron energy loss measurements (50 keV) on monocrystalline silver films in transmission the intensity of the 3.8 eV volume plasma loss is found to be dependent on the crystal orientation. If the crystal is tilted relatively to the electron beam by an angle α the elastic intensity I_el in the primary direction oscillates by 10%, the intensity of the volume plasmon however varies much stronger similar to I_el; it can become even zero at certain angles α. The intensity of the surface loss is nearly proportional to the elastic intensity. An explanation of this phenomenon is missing. Presumably it must lie in the dynamic theory of electron diffraction.     

Features of the dissipative electron transport near the boundary in the system Al(N)-In(S)

The temperature behavior of the coherent electron transport that arises in the presence of Andreev reflections is studied near the boundary of a hybrid system consisting of aluminum (N) and indium (S). The qualitative change of the temperature behavior upon changes in the electron mean free path l _el as a result of the elastic deformation of the sample is observed for the first time on the same sample, at probes mounted in the normal region at fixed distances and from the boundary. As the temperature is lowered, the measured effective resistance decreases for l _el ? L _{1, 2} and increases in a certain temperature region in which l _el ～ L _{1, 2}. It is shown that phenomena of this kind correspond to quantum-interference features in the scattering of coherent electronic and Andreev hole excitations on elastic centers.     

SiO2 surface defect centers studied by AES

A theoretical model is proposed on how a Si dangling bond associated with an oxygen vacancy on a SiO₂ surface (E_s′ center) should be observed by Auger electron spectroscopy (AES). The Auger electron distribution N_A(E) for the L₂₃VV transition band is calculated for a stoichiometric SiO₂ surface, and for a SiO_x surface containing Si-(e^?O₃) coordinations. The latter is characterized by an additional L₂₃VD transition band, where D is the energy level of the unpaired electron e^?. The theoretical N_A(E) spectra are compared with experimental N(E) spectra for a pristine, and for an electron radiation damaged quartz surface. Agreement with the theoretical model is obtained if D is assumed to lie ≈2 eV below the conduction band edge. This result shows that AES is uniquely useful in revealing the absolute energy level of localized, occupied surface defect states. As the L₂₃VD transition band (main peak at 86 eV) cannot unambiguously be distinguished from a SiSi₄ coordination L₂₃VV spectrum (main peak at 88 eV), supporting evidence is presented as to why we exclude a SiSi₄ coordination for our particular experimental example. Application of the Si-(e^?O₃) model to the interpretation of SiO₂Si interface Auger spectra is also discussed.     

A plasma resonance study of valley transfer in (001) Si inversion layers

We observed the two-dimensional plasmons of the two-component electron plasma in the (001) Si-inversion layer resulting from simultaneous population of the [001] valley, E₀, and the [010] valley, E₀′, subbands under a compressional uniaxial stress along [010]. Our data show an onset of electron transfer from E₀ to E₀′ at X = (1.4 ± 0.1) kbar for n = 1.67 × 10¹² cm^?2 and X = (1.2 ± 0.2) kbar for n = 2.60 × 10¹² cm^?2, consistent with the theory of Takada and Ando that includes the electron-electron correlation effects.     

When,why, and how does like like like?: Electrostatic attraction between similarly charged species

In the Derjaguin-Landau-Verwey-Overbeek (DLVO) framework of the past 60 years, colloidal interaction between similarly charged particles has been claimed to be simply repulsive, and an attraction such as the van der Waals interaction is attached to the Coulombic repulsion. Statistical-thermodynamic considerations show that the electrostatic Helmholtz free energy ΔF^el is generally not equal to the electrostatic Gibbs free energy ΔG^el for simple ionic solutions, and the difference ΔG^el–ΔF^el (corresponding to the electrostatic osmotic pressure p^el) becomes larger with increasing charge number. Thus, it is expected that ΔG^el–ΔF^el be large for highly charged macroions. In the DLVO framework, however, ΔG^el = ΔF^el was postulated. Sogami showed that a mean field approach reproduced repulsion at the level of ΔF^el but resulted in (repulsion and) attraction at the level of ΔG^el. Overbeek’s critique of Sogami theory is shown to be in error. If this criticism were correct, then not only the Sogami theory but also the Debye-Hückel theory would be wrong. The attraction is thus confirmed to exist not only for multi-valent but also mono-valent counterions.     

Absolute cross sections of electron attachment to molecular clusters: Part I. Formation of (CO2) N −

A procedure of determining absolute cross section σ^? of electron attachment to (CO₂)_N clusters at pair collisions in crossed beams is suggested. The cross section is measured as a function of energy (E = 0.1–50 eV) and of cluster mean size N in a beam $(\bar N = 2 - 4000 molecules)$ . It is found that, even at $\bar N > 200$ and E ≤ 3 eV, σ^? is equal to, or larger than, 7 × 10^?13 cm², i.e., by more than one order of magnitude exceeds the maximal cross section of CO₂ ionization by electron impact. The dependences σ^? $(\bar N,E)$ have two wide continua at E ≤ 5.2 eV and E ≥ 6.9 eV, which correlate well with known functions of CO₂ electron-impact-induced excitation. These continua are attributed largely to formation of (CO₂) _N ^? ions during electron thermalization and solvation in the clusters. At E → 0, the polarization capture of an incident electron by the cluster leads to a sharp increase in cross section σ^?(E). From the dependences σ^? $(\bar N,E)$ measured, the thermalization and sovation probabilities for electrons with E ≤ 0.8 eV and the rate of electron energy loss in the cluster are found.     

Camel's back induced stabilization of electron-hole liquids : GaP

A camel's back-like nonparabolicity of the longitudinal electron mass enhances the density of states and strongly stabilized an electron-hole-liquid. In GaP therefore the EHL density is doubled to 8.6 × 18¹⁸cm^?3 and the Fermi energy ratio E_F^h/E_F^e changes from 1.9 to 4.9. The theoretical binding energy agrees with the experimental E_B=17.5±3meV interpreting the luminescence at 2.30 eV as a superposition of liquid and plasma recombination radiation.     

Ionization cross sections and rate coefficients for the ground state of AsI-like ions

Detailed level-by-level calculations of cross sections and rate coefficients for electron impact direct ionization and excitation-autoionization of AsI-like ions in the 3d ¹⁰4s ²4p ³ (⁴S_3/2) ground state have been performed. The cross sections are presented in the energy range near the threshold for the five ions Mo⁹⁺, Xe²¹⁺, Pr²⁶⁺, Dy³³⁺ and W⁴¹⁺. The rate coefficients are given for all the ions from Sr⁵⁺ to U⁵⁹⁺ in the AsI sequence at the seven electron temperatures (k T _e = 0.1E _I ,0.3E _I ,0.5E _I ,0.7E _I ,E _I ,2E _I and 10E _I , where E _I is the first ionization energy). The calculations include the contribution of direct ionization (DI) calculated using the Lotz formula approximation and the contributions of excitation-autoionization (EA) computed in the framework of the Distorted Wave (DW) approximation for the 4s ? nl, 3d ? nl and 3p ? nl resonant inner-shell excitations. The ionization enhancement due to the EA channels is presented as a function of Z along the AsI isoelectronic sequence. The present results show the great importance of the EA processes; an ionization enhancement factor of up to 6.5 is predicted for instance for Dy³³⁺ (Z = 66) at electron temperature of coronal equilibrium maximum abundance.     

Deep level transient spectroscopy in Hg1−xCdxTe

We report the application of Deep Level Transient Spectroscopy (DLTS) in Hg_1-xCd_xTe, demonstrating for the first time the utilization of DLTS techniques in a narrow band-gap semiconductor, E_g < 0.40 eV. DLTS measurements performed on an n⁺-p diode with E_g (x=0.21, T=30 K) =0.096 eV have identified an electron trap with an energy of E_v + 0.043 eV and a hole trap at E_v + 0.035 eV. Measurements of trap densities, capture cross sections, and the close proximity of the electron and hole trap locations within the band-gap suggest that DLTS may be observing both the electron and hole capture at a single Shockley-Read recombination center. The trapping parameters measured by DLTS predict minority carrier lifetime versus temperature data to be comparable with the experimentally measured values.     

Electronic structure for sliding charge density waves

We present a model for the electron system in NbSe₃ based on its quasi one-dimensional metallic properties. In a one-dimensional metal phonon drag of 2K_F-phonons takes place at temperatures higher than θ_D, since the phonon-electron scattering rate τ^?1_ph?el is greater than the phonon-phonon rate τ^?1_ph?ph. this situation is in contrast to the situation in three dimensional metals, where phonon drag takes place only at very low temperatures. Our model explains the transport properties of the material including the electrical conductivity anistropy, the conductivity in a strong electric field, and the Hall effect data.     

Plasmons in semiconductors and insulators: A simple formula

Based on the dielectric function of an excitonic system, a simple model dielectric function is constructed. The high energy zero of this function yields the plasma frequency, and is given by: (hω_x)² = (hω_f)² + E_x² where ω_f is the free electron plasma frequency and E_x the lowest exciton energy. It is argued that this formula is valid for both, Frenkel and Wannier excitons, and comparison is made with experiments on a variety of crystals, ranging from InSb to Ar. In all cases, surprisingly good agreement is found.     

Optical properties of electron irradiation induced defects in InP

The optical properties of deep hole traps H₄ and H₅ in p type and of the deep electron trap E₁₁ in n type InP, introduced by electron irradiation, have been studied using deep level optical spectroscopy. Comparison of the optical threshold with the thermal activation energy of H₅ level shows that it is highly relaxed with a Frank-Condon shift d_Fc = 0.45 eV. The electron level E₁₁ is weakly relaxed and its optical cross section σ ⁰ is well accounted for by transitions to the Γ_6c minimum. The optical absorption σ_p⁰ associated to level H₄ shows two successive onsets at hν = 0.5 and hν = 1.2 eV which can be attributed to hole transitions to the Γ_7–8 and to the L_4–5 valence band extrema, respectively. The deduced Frank-Condon shift, d_Fc = 0.23 eV, agrees with the measured difference of 40 meV between its apparent activation energy E_a and its thermal activation energy E_T.     

Mass number dependence of the difference (rel−rmu), a dispersion effect in electron scattering

A systematic analysis of rms charge radii determined by elastic electron scattering (r_el) and muonic atom X-rays (r_mu), respectively, shows that — on the average — the former is less then the latter. This difference is probably caused by virtual excitation and deexcitation of the nucleus: a dispersion effect. The mass number dependence of the difference is also investigated. Its absolute value decreases with increasing mass number as (r_el?r_mu)≈ ?12+0.03 A (am). ThisA-dependence is compared with the available theoretical predictions using low-q, low-Z approximations.     

I.R.-Absorption peculiarities of GaP:Fe crystals irradiated by electrons

Using photo-ionization transitions theory by Allen and Langer the existence of two kinds of transitions was demonstrated for GaP:Fe crystals, namely, transition from valence band to local level (E_{2 = 1.27eV}). The effect of that form local level to conduction band (E_{2 = 1.27eV}). The effect of electron irradiation (E_{el = 3 MeV}) on both intracenter absorption and absorption in the 0.7?1.6 eV spectral region was investigated and the conclusion was made that absorption E₁ is probably due to Fe²⁺+e → Fe³⁺ photoionization transition while E₂-absorption is due to Fe³⁺ → Fe⁴⁺ +e transition.     

On hole and electron scattering effects in energy band investigations by photon-enhanced field emission

The detection of change in photo-modulated field-emission currents enables one to define not only the levels from which the excited electrons are ejected, but also on which levels the holes are created. The hole recombination processes determine the necessary absorbed light intensity in order to get measurable reduction in that part of field emission current which is due to electrons with energies between E_i and E₁ + ΔE below the Fermi level. The analysis gives an estimate of the order of the parameters involved as a function of hole scattering type, band characteristics, etc. It is shown that 10³ – 10⁴ W/cm² absorbed light intensities are necessary. The problem of separating the effects of excited electron scattering from those of the energy variations of the tunneling operator is discussed.     

Mean field theory and ϵ-expansion for Anderson localization

We present a field theoretic formulation of Anderson localization of an electron in a random potential. In mean field theory we find a mobility edge at energy E_c separating a region with no states from one with conducting states. When the nearest neighbor hopping is a random variable with variance σ, E_c²=4zσ², where z is the coordination number. We study this mobility edge using the ?-expansion. We find an upper critical dimension of eight near which this mobility transition is in the same universality class as the statistics of dilute branched polymers (lattice animals).     

Hartree calculations for n-inversion layers on stressed silicon surfaces

The energy splittings and occupation number densities in n-type inversion layers are estimated in a Hartree calculation with a parametrized exponential potential. Good agreement with experiment is obtained for low temperatures and for electron concentrations 1×10¹²cm^?2 ?N_s?1×10¹³cm^?2. On the basis of these calculations the influence of uniaxial stress is considered.For a 001-stress along a (100)-surface one finds that (i) the stress induced subband splitting is a function of the electron density, and (ii) the splitting E₁-E₀ within a subband system depends on the applied stress.