共查询到20条相似文献,搜索用时 78 毫秒
1.
Assanai Suwanvarangkoon I-Ming Tang Rassmidara Hoonsawat Bumned Soodchomshom 《Physica E: Low-dimensional Systems and Nanostructures》2011,43(10):1867-1873
We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, relativistic mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced relativistic mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced relativistic mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction. 相似文献
2.
用Bogoliubov-de Gennes方程来研究量子线/绝缘层/p波超导体结(q/I/p)中的准粒子输运过程,利用推广的Blonder,Tinkham和Klapwijk模型计算绝对零度和有限温度下q/I/p的一级谐波隧道谱.和量子线/绝缘层/d波超导体结的一级谐波隧道谱不同的是q/I/p的一级谐波隧道谱中存在零偏压电导峰.随着q/I/p中绝缘层的势垒散射增强,q/I/p的一级谐波隧道谱中零偏压电导峰变高. 相似文献
3.
N/I/d波超导体c轴隧道结的微分电导 总被引:1,自引:0,他引:1
以方势垒描述绝缘层,对N/I/d波超导体c轴隧道结的微分电导进行了研究.结果表明:在N/I/d波超导体c轴隧道结的隧道谱中存在V型结构、能隙外的凹陷和小的零偏压电导峰.这一结果能很好的解释相关的实验现象. 相似文献
4.
We have studied the tunneling conductance in ferromagnet/insulator/p-wave superconductor junctions, taking into account the
rough interface scattering effect. We find that there exist zero-bias conductance peaks and single-minimum structure in tunneling
spectroscopy. As the exchange energy increases, the Andreev reflection is always suppressed and the differential conductance
decreases. The differential conductance depends on the barrier strength and the roughness at the interface.
Supported by the Natural Science Foundation of Jiangsu Higher Education Institutions, China (Grant No. 06KJB140009) 相似文献
5.
Differential conductance in normal-metal/insulator/metal/d-wave superconductor junction carrying a supercurrent
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This paper applies the Bogoliubov--de Gennes equation and
the Blonder--Tinkham--Klapwijk approach to study the oscillatory
behaviour of differential conductance in a normal metal/insulator/metal/d-wave
superconductor junction carrying a
supercurrent Is. We find that (i) a three-humped structure
appears at a nearly critical supercurrent Is and z ≈
0.5 for the normal metal/insulator/metal/d_x2 + y2-wave
superconductor junction; (ii) the zero-bias conductance peak splits
into two peaks with sufficiently large applied current for the normal
metal/insulator/metal/dxy-wave superconductor junction; (iii)
the conductance spectrum exhibits oscillating behaviour with the
bias voltage and the peaks of the resonances are suppressed by
increasing supercurrent Is. 相似文献
6.
DONG Zheng-Chao 《理论物理通讯》2004,41(1):135-140
The tunneling conductance and tunneling magnetoresistance (TMR) are
investigated in ferromagnet/insulator/ferromagnet/insulator/d-wave
superconductor (FM/I/FM/I/d-wave SC) structures by applying an extended
Blonder-Tinkham-Klapwijk (BTK) approach. We study the effects of the
exchange splitting in the FM, the magnetic impurity scattering in the thin
insulator interface of FM/I/FM, and noncollinear magnetizations in adjacent
magnetic layers on the TMR. It is shown (1) that the tunneling conductance
and TMR exhibit amplitude-varying oscillating behavior with exchange
splitting, (2) that with the presence of spin-flip scattering in insulator
interface of FM/I/FM, the TMR can be dramatically enhanced, and (3)
that the TMR depends strongly on the angle between the magnetization of two
FMs. 相似文献
7.
We report a transport study of exfoliated few monolayer crystals of topological insulator Bi2Se3 in an electric field effect geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low bulk carrier density to change the sign of the Hall density with the gate voltage V(g). We find that the temperature T and magnetic field dependent transport properties in the vicinity of this V(g) can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high-mobility metallic channel that dominates at low T. The conductance (approximately 2×7e2/h), weak antilocalization, and metallic resistance-temperature profile of the latter lead us to identify it with the protected surface state. The relative smallness of the observed gap implies limitations for electric field effect topological insulator devices at room temperature. 相似文献
8.
LI Xiao-Wei 《理论物理通讯》2008,49(5):1345-1348
We have studied the quasiparticle transport in quantum-wire
/ferromagnetic-insulator/d wave superconductor Junction (q/FI/d) in the
framework of the Blonder-Tinkham-Klapwijk model. We calculate the tunneling conductance in q/FI/d as a function of the bias voltage at zero temperature and finite temperature based on Bogoliubov-de Gennes equations. Different from the case in normal-metal/insulator/d wave superconductor Junctions, the zero-bias conductance peaks vanish for the single-mode case. The tunneling conductance spectra depend on the magnitude of the exchange interaction at the ferromagnetic-insulator. 相似文献
9.
Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator
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AlGaN/GaN heterojunction field-effect transistors (HFETs) with p-GaN cap layer are developed for normally-off operation, in which an in-situ grown AlN layer is utilized as the gate insulator. Compared with the SiNx gate insulator, the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region, which helps to positively shift the threshold voltage. In addition, the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage. Owing to the introduction of AlN layer, normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized. Furthermore, the field-effect mobility is approximately 1500 cm2·V-1·s-1 in the 2DEG channel, implying a good device performance. 相似文献
10.
Spin transport properties in ferromagnet/superconductor junctions on topological insulator
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The spin-dependent Andreev reflection is investigated theoretically by analyzing the electronic transport in a thin-film topological insulator (TI) ferromagnet/superconductor (FM/SC) junction. The tunneling conductance and shot noise are calculated based on the Dirac-Bogoliubov-de Gennes equation and Blonder-Tinkham-Klapwijk theory. It is found that the magnetic gap in ferromagnet can enhance the Andreev retro-reflection but suppress the specular Andreev reflection. The gate potential applied to the electrode on top of superconductor can enhance the two types of reflections. There is a transition between the two types of reflections at which both the tunneling conductance and differential shot noise become zero. These results provide a method to realize and detect experimentally the intra-band specular Andreev reflection in thin film TI-based FM/SC structures. 相似文献
11.
We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio. 相似文献
12.
We present a general formula for tunneling conductance in ballistic ferromagnet/ferromagnetic insulator/superconductor junctions where the superconducting state has the opposite spin pairing symmetry. The formula shows, correctly, that ferromagnetism has been induced by the effective mass difference between up- and down-spin electrons. This effectively mass mismatched ferromagnet and a standard Stoner ferromagnet have been employed in this paper. As an application of the formulation, we have studied the tunneling effect for junctions including a spin-triplet p-wave superconductor, where we choose a normal insulator for the insulating region, although our formula can be used for a ferromagnetic insulator. Then, we have been able to devote our attention to features of a ferromagnetic metal. The conductance spectra show a clear difference between the two ferromagnets depending upon the method of normalization of the conductance. In particular, an essential difference is seen in the zero-bias conductance peaks, reflecting the characteristics of each ferromagnet. From the obtained results, we suggest that the measurements of the tunneling conductance in the junction provide us with useful information about the mechanism of itinerant ferromagnetism in metals. 相似文献
13.
We investigate theoretically the nonlocal transport properties in a ferromagnet/insulator/superconductor/insulator/ferromagnet (F/I/SC/I/F) junction with perpendicular magnetization formed on a topological insulator. The nonlocal conductance through the junction depends strongly on whether the perpendicular magnetizations of the two ferromagnets are in a parallel or an antiparallel alignment. This stems from the fact that on the surface of three dimensional topological insulator the exchange field acts as vector potential and from spin-momentum locking property of the topological insulator surface states. It is found that the nonlocal conductance as a function of barrier strength of the I regions exhibits a quantum switch on-off property. 相似文献
14.
The effect of the ferromagnetic insulator on tunneling conductance in ferromagnetic semiconductor/ferromagnetic insulator/p-wave superconductor (FS/FI/P) junctions is studied based on a scattering theory. Three kinds of pairings for the P side are chosen: px, py ,px+ipy waves. It is shown that the spin filtering effect originating from the exchange field in the FI strongly modifies the normalization conductance. Many novel features including the zero-bias conductance dip and splitting are exhibited for fixed spin polarization in the FS. The tunneling spectrum for the heavy holes is much different from that for the light holes due to the different mismatches in the effective mass and Fermi velocity between FS and P. 相似文献
15.
16.
DONG Zhengchao 《中国科学G辑(英文版)》2006,49(5)
We study the Zeeman effect on the d-wave superconductor and tunneling spectrum in normal-metal(N)/d-wave superconductor(S) junction by applying a Zeeman magnetic field to the S. It is shown that: (1) the Zeeman magnetic field can lead to the S gap decreasing, and with the increase in Zeeman energy, the superconducting state is changed to the normal state, exhibiting a first-order phase transition; (2) the Zeeman energy difference between the two splitting peaks in the conductance spectrum is equal to2h0 (h0 is the Zeeman energy); (3) both the barrier strength of interface scattering and the temperature can lower the magnitudes of splitting peaks, of which the barrier strength can lead to the splitting peaks becoming sharp and the temperature can smear out the peaks,however, neither of them can influence the Zeeman effect. 相似文献
17.
A microscopic theory is presented for the local moment formation near a nonmagnetic impurity or a copper defect in high-Tc superconductors. We use a renormalized mean-field theory of the t-J model for a doped Mott insulator and study the fully self-consistent, spatially unrestricted solutions of the d-wave superconducting (SC) state in both the spin S=0 and S=1/2 sectors. We find a transition from the singlet d-wave SC state to a spin doublet SC state when the renormalized exchange coupling exceeds a doping dependent critical value. The induced S=1/2 moment is staggered and localized around the impurity. It arises from the binding of an S=1/2 nodal quasiparticle to the impurity. The local density of states is calculated and connections to NMR and STM experiments are discussed. 相似文献
18.
19.
在正常金属/绝缘层/s波超导隧道结(NIS结)中,以方势垒描述绝缘层对准粒子输运的影 响,运用Bogoliubov_de Gennes(BdG)方程、Blonder_Tinkham_Klapwijk(BTK)理论,计算 了NIS隧道结中的准粒子输运系数和微分电导.研究表明,微分电导随绝缘层厚度的变化呈振 荡和衰减两种趋势,其振荡的周期和衰减的快慢均强烈地依赖于绝缘层的势垒值以及V=Δ 0/e的偏压值,电导峰的高低及峰的位置与绝缘层厚度密切相关,显示了比δ势 描述更为丰富多彩的隧道谱.
关键词:
NIS结
方势垒
微分电导 相似文献
20.
Bumned Soodchomshom Peerasak Chantngarm 《Physica C: Superconductivity and its Applications》2010,470(21):1949-1954
This work compares the normal-current in a NM/Fi/NM junction with the super-current in a SC/Fi/SC junction, where both are topological insulator systems. NM and Fi are normal region and ferromagnetic region of thickness d with exchange energy m playing a role of the mass of the Dirac electrons and with the gate voltage VG, respectively. SC is superconducting region induced by a s-wave superconductor. We show that, interestingly, the critical super-current passing through a SC/Fi/SC junction behaves quite similar to the normal-current passing through a NM/Fi/NM junction. The normal-current and super-current exhibit N-peak oscillation, found when currents are plotted as a function of the magnetic barrier strength χ ∼ md /?vF. With the barrier strength Z ∼ VGd /?vF, the number of peaks N is determined through the relation Z ∼ Nπ + σπ (with 0 < σ?1 for χ < Z). The normal- and the super-currents also exhibit oscillating with the same height for all of peaks, corresponding to the Dirac fermion tunneling behavior. These anomalous oscillating currents due to the interplay between gate voltage and magnetic field in the barrier were not found in graphene-based NM/Fi/NM and SC/Fi/SC junctions. This is due to the different magnetic effect between the Dirac fermions in topological insulator and graphene. 相似文献