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1.
Hiroyuki Kizaki 《Surface science》2007,601(18):3956-3960
Photon stimulated ion desorption (PSID) from methyl ester terminated self-assembled monolayer (MHDA-SAM, HS(CH2)15COOCH3) and methyl mercaptoacetate (MA, HSCH2COOCH3) on Ag has been investigated using soft X-ray in the C and O K-edge regions. In MHDA-SAM on Ag, site-selective ion desorption has been clearly observed at resonant core excitations of C1s, O1s(OCH3) → σ(OCH3) and O1s(OCH3) → σ(COCH3). Ion intensity in MA on Ag is obviously reduced for (n = 1-3) at C1s, O1s(OCH3) → σ(OCH3) excitations, and no site-selective reaction at O1s(OCH3) → σ(COCH3) excitations has been observed. These reactions may be influenced by configurational difference of reactive sites. It is suggested that surface effects on the selective reaction due to positioning methyl ester group near the surface plays an important role.  相似文献   

2.
A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH4/H2/B(OCH3)3 gas mixture. A maximum growth rate of 0.65 mg cm−2 h−1 was obtained with CH4/H2/B(OCH3)3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH3)3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH4/H2/B(OCH3)3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 1020 cm−3 with CH4/H2/B(OCH3)3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH4/H2/B(OCH3)3 ratio of 4/190/10 possessed the best phenol removal efficiency.  相似文献   

3.
Ternary thin films of cerium titanium zirconium mixed oxide were prepared by the sol-gel process and deposited by a spin coating technique at different spin speeds (1000-4000 rpm). Ceric ammonium nitrate, Ce(NO3)6(NH4)2, titanium butoxide, Ti[O(CH2)3CH3]4, and zirconium propoxide, Zr(OCH2CH2CH3)4, were used as starting materials. Differential calorimetric analysis (DSC) and thermogravimetric analysis (TGA) were carried out on the CeO2-TiO2-ZrO2 gel to study the decomposition and phase transition of the gel. For molecular, structural, elemental, and morphological characterization of the films, Fourier Transform Infrared (FTIR) spectral analysis, X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), cross-sectional scanning electron microscopy (SEM), and atomic force microscopy (AFM) were carried out. All the ternary oxide thin films were amorphous. The optical constants (refractive index, extinction coefficient, band gap) and thickness of the films were determined in the 350-1000 nm wavelength range by using an nkd spectrophotometer. The refractive index, extinction coefficient, and thickness of the films were changed by varying the spin speed. The oscillator and dispersion energies were obtained using the Wemple-DiDomenico dispersion relationship. The optical band gap is independent of the spin speed and has a value of about Eg≈2.82±0.04 eV for indirect transition.  相似文献   

4.
β-FeOOH nanoparticles have been prepared in a microemulsion system with nonionic surfactant polyoxyethylene(4)nonylphenylether CH3(CH2)8C6H4O(CH2OCH2)4H. The powder X-ray diffraction, infrared spectra, and transmission electron microscopic images indicate that the products are 20–30 nm length nanorods with a crystal structure belonging to monoclinic β-FeOOH and lattice parameters of a=0.9981, b=0.2948, c=1.0485 nm and β=92.26°. The size and shapes of β-FeOOH nanoparticles can be manipulated by the surfactant. The modified β-FeOOH nanoparticles are paramagnetic at room temperature and may be antiferromagnetic or weakly ferrimagnetic at lower temperatures. The 57Fe Mössbauer spectra show that the magnetic structure transforms below 150 K and two kinds of Fe–O octahedra exist in the lattice of the modified β-FeOOH nanoparticles. The numbers of each kind of Fe–O octahedra are not the same at room temperature or at low temperatures.  相似文献   

5.
Ferroelectric BiFeO3 thin films with Nd-Cr (or Sm-Cr) co-substitution (denoted by BNdFCr and BSmFCr, respectively) were deposited on the Pt(2 0 0)/TiO2/SiO2/Si(1 0 0) substrates by a chemical solution deposition method. X-ray diffraction patterns revealed the formation of BNdFCr and BSmFCr thin films without any secondary phases. The co-substituted BNdFCr (or BSmFCr) thin films, which were annealed at 550 °C for 30 min in N2 atmosphere, exhibited enhanced electrical properties compared to BFO thin films with the remanent polarization (2Pr) and coercive electric field (2Ec) of 196, 188 μC/cm2 and 600, 570 kV/cm with the electric field of 800 kV/cm, respectively. The leakage current densities of BNdFCr and BSmFCr thin films measured at room temperature were approximately three orders of magnitude lower than that of BFO thin film, and the leakage current at room temperature of the thin films exhibited three distinctive conduction behaviors. Furthermore, the values of pulse polarizations [i.e., +(P*-P^) or −(P*-P^)] of BNdFCr and BSmFCr thin films were reasonably unchanged up to 1.4 × 1010 switching cycles.  相似文献   

6.
Ferroelectric barium strontium titanate (Ba0.7Sr0.3TiO3)(BST) thin films have been prepared from barium 2-ethylhexanoate [Ba[CH3(CH2)3CH(C2H5)CO2]2], strontium 2-ethylhexanoate [Sr[CH3(CH2)3CH(C2H5)CO2]2] and titanium(IV) isopropoxide [TiOCH(CH3)2]4 precursors using a modified sol-gel technique. The precursor except [TiOCH(CH3)2]4 were synthesized in the laboratory. Transparent and crack-free films were fabricated on pre-cleaned quartz substrates by spin coating. The structural and optical properties of films annealed at different temperatures have been investigated. The as-fired films were found to be amorphous that crystallized to the tetragonal phase after annealing at 550 °C for 1 h in air. The lattice constants “a” and “c” were found to be 3.974 A and 3.990 A, respectively. The grain sizes of the films annealed at 450, 500 and 550 °C were found to be 30.8, 36.0 and 39.8 nm respectively. The amorphous film showed very high transparency (∼95%), which decreases slightly after crystallization (∼90%). The band gap and refractive index of the amorphous and crystalline films were estimated. The optical dispersion data are also analyzed in the light of the single oscillator model and are discussed.  相似文献   

7.
《Solid State Ionics》1999,116(3-4):197-209
A novel family of Li+-based organic/inorganic materials obtained by the sol–gel process is proposed. The compounds, named urethanesils, are obtained as thin, transparent, elastomeric and amorphous monolithic films. They incorporate solvating pendant methyl end-capped short poly(oxyethylene) chains which are covalently bonded to the silica backbone by means of urethane cross-links. The urethane linkages are formed by reacting 3-isocyanatepropyltriethoxysilane with hepta(ethylene glycol) methyl ether (HEGME). Li+ has been introduced in the urethanesils as lithium triflate (LiCF3SO3). Two compositions of salt have been considered: n=100 and 8, where n represents the molar ratio of (OCH2CH2) units per lithium ion. Infrared spectroscopy provides conclusive evidence that, although the oligopolyether chains of HEGME become less disordered upon formation of the inorganic network, the addition of salt induces disorder. The FTIR spectrum of the most concentrated urethanesil strongly suggests that the triflate ions are essentially coordinated in the material. The thermal and mechanical properties of the undoped and doped urethanesils have been investigated by DSC and DMTA. At 90°C, the highest ionic conductivity (approximately 10−6 Ω−1 cm−1) is observed for composition n=8. The electrochemical stability domain of the least concentrated urethanesil spans 5 V.  相似文献   

8.
This paper focuses the influence of porous morphology on the microstructure and optical properties of TiO2 films prepared by different sol concentration and calcination temperatures. Mesoporous TiO2 thin films were prepared on the glass substrates by sol-gel dip coating technique using titanium (IV) isopropoxide. Porous morphology of the films can be regulated by chemical kinetics and is studied by scanning electron microscopy. The optical dispersion parameters such as refractive index (n), oscillator energy (Ed), and particle co-ordination number (Nc) of the mesoporous TiO2 films were studied using Swanepoel and Wemple-DiDomenico single oscillator models. The higher precursor concentration (0.06 M), films exhibit high porosity and refractive index, which are modified under calcination treatment. Calcinated films of low metal precursor concentration (0.03 M) possess higher particle co-ordination number (Nc = 5.05) than that of 0.06 M films (Nc = 4.90) due to calcination at 400 °C. The lattice dielectric constant (E) of mesoporous TiO2 films was determined by using Spintzer model. Urbach energy of the mesoporous films has been estimated for both concentration and the analysis revealed the strong dependence of Urbach energy on porous morphology. The influence of porous morphology on the optical dispersion properties also has been explained briefly in this paper.  相似文献   

9.
GeSbTe (GST) chalcogenide thin films for the phase-change random access memory (PRAM) were deposited by an atomic layer deposition (ALD) process. New precursors for GST thin films made with an ALD process were synthesized. Among the synthesized precursors, Ge(N(CH3)2)4, Sb(N(CH3)2)4, and Te(i-Pr)2 (i-Pr = iso-propyl) were selected. Using the above precursors, GST thin films were deposited using an H2 plasma-assisted ALD process. Film resistivity abruptly changed after an N2 annealing process above a temperature of 350 °C. Cross-sectional scanning electron microscope (SEM) photographs of the GST films on the patterned substrate with aspect ratio of 7 shows that the step coverage is about 90%.  相似文献   

10.
The cobalt oxide (CoO and Co3O4) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH3OCH2CH2OH and Co(NO3)2·6H2O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co3O4 thin film was obtained by annealing in air at 300-600, and N2 at 300, and transferred to CoO thin film by raising annealing temperature in N2. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.  相似文献   

11.
Stable superhydrophobic films were prepared on the electrochemical oxidized titania/titanium substrate by a simple immersion technique into a methanol solution of hydrolyzed 1H,1H,2H,2H-perfluorooctyltriethoxysilane [CF3(CF2)5(CH2)2Si(OCH2CH3)3, PTES] for 1 h at room temperature followed by a short annealing at 140 °C in air for 1 h. The surface morphologies and chemical composition of the film were characterized by means of water contact angle (CA), field emission scanning electron microscopy (FESEM), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). The water contact angle on the surface of this film was measured to be as high as 160°. SEM images showed that the resulting surfaces exhibited special hierarchical structure. The special hierarchical structure along with the low surface energy leads to the high surface superhydrophobicity. The corrosion resistance ability and durance property of the superhydrophobic film in 3.5 wt.% NaCl solution was evaluated by the electrochemical impedance spectroscopy (EIS). The anticorrosion properties of the superhydrophobic film are compared to those of unmodified pure titanium and titania/titanium substrates. The results showed that the superhydrophobic film provides an effective corrosion resistant coating for the titanium metal even with immersion periods up to 90 d in the 3.5 wt.% NaCl solution, pointing to promising future applications.  相似文献   

12.
Flake-like ZnO/surfactant ordered layered nanocomposite has been synthesized by self-assembly at room temperature with the presence of cetyltrimethylammonium bromide (CTAB, CH3(CH2)15N+(CH3)3Br) surfactant. The procedure described in this study is attractive since it gives high yields of ordered layered nanocomposite with flake-like architecture. XRD results showed the formation of a layered structure with two layered spacings ca. 18.56 Å. SEM and FT-IR spectroscopy were used to further characterize ZnO/CTAB nanolayered composite. The ZnO/CTAB-ordered layered nanocomposite exhibits the room temperature photoluminescence (RTPL) characteristics. It is inferred that the RTPL of ZnO/CTAB-layered nanocomposite might be induced by the interfacial effect between the ZnO and the surfactant.  相似文献   

13.
The spacing of chemical functional groups on self-assembled monolayers (SAMs) plays an important role in controlling the density of biomolecules in biochips and biosensors. In this sense, a mixed SAM made of two different terminal groups is a useful organic surface since spacing can be easily controlled by changing a relative mole fraction in a mixture solution. In this study, an acetylene-OCH2O(EG)3(CH2)11S-S(CH2)11(EG)3OCH2O-propene (Eneyne) SAM and mixed SAMs made by a mixture of (S(CH2)11(EG)3OCH2O-acetylene)2 (Diyne) and (S(CH2)11(EG)3OCH2O-propene)2 (Diene) were produced on gold substrates and measured by using ToF-SIMS. The secondary ion yield ratio of [Au·S(CH2)11(EG)3OCH2O-acetylene] to [Au·S(CH2)11(EG)3OCH2O-propene] was measured for each mixed SAM and plotted as a function of the mole fraction of Diyne to Diene in a SAM solution. The ion yield ratio of a mixed SAM produced from a solution with a mole fraction of 0.5 (i.e., 1:1 mixture) was 0.3, which corresponded well to the ion yield ratio measured from an Eneyne SAM. A time-dependent experiment of Eneyne SAM formation and immersion experiment of Eneyne SAM into Diyne solution or into Diene solution were performed. The relative ion yield ratio of 0.3 was due to a different secondary ion formation and not due to the difference in the amount of adsorbates on the surface, nor to the different binding strengths onto the gold surface. Our study shows that a mixed SAM with well-controlled spacing can be produced and quantified by using the ToF-SIMS technique.  相似文献   

14.
The two-channel thermal decomposition of toluene, C6H5CH3 → C6H5CH2 + H (1) and C6H5CH3 → C6H5 + CH3 (2), was investigated in shock tube experiments over the temperature range of 1400-1780 K at a pressure of 1.5 (±0.1) bar. Rate coefficients for reactions (1) and (2) were determined by monitoring benzyl radical (C6H5CH2) absorption at 266 nm during the decomposition of toluene diluted in argon and modeling the temporal behavior of the benzyl concentration with a kinetic model. The first-order rate coefficients determined at a pressure of 1.5 bar are expressed by k1(T) = 2.09 × 1015 exp (−87510 [cal/mol]/RT) [s−1] and k2(T) = 2.66 × 1016 exp (−97880 [cal/mol]/RT) [s−1]. The resulting branching ratio, k1/(k1 + k2), ranges from 0.8 at 1350 K to 0.6 at 1800 K.  相似文献   

15.
Highly transparent conductive Dy2O3 doped zinc oxide (ZnO)1-x(Dy2O3)x nanocrystalline thin films with x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy2O3 doped thin films were investigated as a function of the x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02 × 10−4 Ω cm with x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of x value. On the contrary, the optical direct band gap of the (ZnO)1-x(Dy2O3)x films first increased, then decreased with x increasing. The average transmission of Dy2O3 doped zinc oxide films in the visible range is above 90%.  相似文献   

16.
By electrochemically controlling the structure of the surface aggregates, the grain microstructure has been optimized to yield mesoporous thin films of tungsten oxide (WO3) at the electrode-electrolyte interface in a peroxotungstate sol in the presence of a structure-directing agent (Triton) at room temperature. Apart from the dominant ultrafine nanocrystallites and pores (5-10 nm), well-developed abutting grains (25-100 nm) and nanofibrils also constitute an integral part of the film matrix. X-ray photoemission spectra reveal the as-deposited film (WO3−x) to be constituted by a high proportion of W6+ states with a low oxygen deficiency (x = 0.02). A relatively high W5+ content in the film, upon intercalation of 18 mC cm−2 charge translates into a large coloring efficiency (ηVIS ∼ 70 cm2 C−1) and transmission modulation. At a lithium intercalation level of 22 mC cm−2, in addition to W5+ and W6+ states, the film also comprises of W4+ states. The extremely fast color-bleach kinetics (3 and 2 s, respectively, for a 50% change in transmittance) shown by the as-deposited WO3 film are repercussions of the mesopore morphology, the multiple nanostructures and the sixfold channels of its hexagonal modification. The film shows a high cycling stability as the switching times do not show any significant decline even after 3500 repetitive cycles. Coloration efficiency over the solar and photopic regions and current density for lithium intercalation for the as-deposited film are superior to that observed for the films annealed at 100, 250 and 500 °C. The abysmal electrochromic response of the annealed films is a consequence of surface defects like cracks and uncontrolled densification and pore shrinkage.  相似文献   

17.
The (Pb0.90La0.10)Ti0.975O3/PbTiO3 (PLT/PT), PbTiO3/(Pb0.90La0.10)Ti0.975O3/PbTiO3 (PT/PLT/PT) multilayered thin films with a PbOx buffer layer were in situ deposited by RF magnetron sputtering at the substrate temperature of 600 °C. With this method, highly (1 0 0)-oriented PLT/PT and PT/PLT/PT multilayered thin films were obtained. The PbOx buffer layer leads to the (1 0 0) orientation of the films. The dielectric, ferroelectric and pyroelectric properties of the PLT multilayered thin films were investigated. It is found that highly (1 0 0)-oriented PT/PLT/PT multilayered thin films possess higher remnant polarization 2Pr (44.1 μC/cm2) and better pyroelectric coefficient at room temperature p (p = 2.425 × 10−8 C/cm2 K) than these of PLT and PLT/PT thin films. These results indicate that the design of the PT/PLT/PT multilayered thin films with a PbOx buffer layer should be an effective way to enhance the dielectric, ferroelectric and pyroelectric properties. The mechanism of the enhanced ferroelectric properties was also discussed.  相似文献   

18.
a-C:H films were prepared by middle frequency plasma chemical vapor deposition (MF-PCVD) on silicon substrates from two hydrocarbon source gases, CH4 and a mixture of C2H2 + H2, at varying bias voltage amplitudes. Raman spectroscopy shows that the structure of the a-C:H films deposited from these two precursors is different. For the films deposited from CH4, the G peak position around 1520 cm−1 and the small intensity ratio of D peak to G peak (I(D)/I(G)) indicate that the C-C sp3 fraction in this film is about 20 at.%. These films are diamond-like a-C:H films. For the films deposited from C2H2 + H2, the Raman results indicate that their structure is close to graphite-like amorphous carbon. The hardness and elastic modulus of the films deposited from CH4 increase with increasing bias voltage, while a decrease of hardness and elastic modulus of the films deposited from a mixture of C2H2 + H2 with increasing bias voltage is observed.  相似文献   

19.
The water-soluble Pr (Ⅲ) and Nd (Ⅲ) complexes with an ofloxacin derivative have been prepared and characterized. The single-crystal X-ray diffraction showed that the Pr (III) and Nd (III) complexes have the similar molecular structure. Under physiological pH condition, the effects of [PrL(NO3)2(CH3OH)](NO3) and [NdL(NO3)2(CH3OH)](NO3) on bovine serum albumin (BSA) were examined using fluorescence spectroscopy in combination with UV-vis absorbance and circular dichroism (CD) spectra. The result reveals that the quenching mechanism of fluorescence of BSA by two complexes is a static quenching process and the number of binding sites is about 1 for both. The thermodynamic parameters (ΔH=−14.52 kJ mol−1, ΔS=56.54 J mol−1 K−1 for [PrL(NO3)2(CH3OH)](NO3) and ΔH=−24.63 kJ mol−1, ΔS=22.07 J mol−1 K−1 for [NdL(NO3)2(CH3OH)](NO3)) indicate that hydrophobic and electrostatic interactions are the main binding force in the complexes-BSA system. The binding average distance between complexes and BSA was obtained on the basis of Förster's theory. In addition, it was proved by the CD spectra that the BSA secondary structure was changed in the presence of complexes in an aqueous solution.  相似文献   

20.
Quaternization of thin films plasma-polymerized from trimethylsilyldimethylamine, bis(dimethylamino)methylsilane, bis(dimethylamino)methylvinylsilane with methylbromide was investigated by elemental analysis, infrared spectroscopy, and ESCA. The modification of amino and amineoxide groups in these plasma polymers was accomplished to yield quaternary nitrogen residues of N+ (CH3)HBr?, N+ (CH3)2Br?, and N+ (OCH3)Br? groups. These quaternized plasma-films are sensitive to moisture, and their electrical resistance decreases exponentially with increasing the relative humidity from 20 to 90% by four orders. The hysteresis in the electrical resistance in cyclically changing the relative humidity is not so large, the response time being within 20 s.  相似文献   

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