The Hall effect in granular metal films near the percolation threshold

We have measured the Hall effect in the granular metals Au-SiO₂ and W-Al₂O₃ near their percolation thresholds. Our results indicate that when conduction is by electronic tunneling between isolated grains, the Hall coefficient is negative for both cermets. In the bulk, Au has a negative coefficient and W a positive one.     

Anomalous Hall effect in granular Fe/SiO2 films in the tunneling-conduction regime

It is established that the Hall effect in Fe/SiO₂ nanocomposite films in the activational tunneling conduction range is anomalous, i.e., the Hall resistivity ρ_h is proportional to the magnetization and is due to the spin-orbit interaction. The parametric coupling of the Hall and longitudinal (ρ_xx) resistances ρ_h ∝ ρ _xx ^m (with temperature as the parameter) is characterized by a much lower value of the exponent m than in a uniform ferromagnetic metal. This circumstance is attributed to the characteristic features of the Hall effect mechanism in the hopping regime — in our case, the interference of the amplitudes of tunneling transitions in a set of three granules. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 87–92 (25 July 1999)     

Conductivity, magnetoresistance, and the Hall effect in granular Fe/SiO2 films

We have investigated the conductance, magnetoresistance, and Hall effect in granular Fe/SiO₂ films with size of the iron grains around 40 Å, whose volume fraction x lies in the range 0.3–0.7. The conduction activation regime has been established for x<0.6. On the insulator side of the transition we observed a giant negative magnetoresistance, falling off sharply as the metal volume fraction decreases. For x<0.4 we observed a large positive magnetoresistance of premagnetized samples, showing up in fields; ～100 Oe and characterized by large response times. The field dependence of the Hall effect in the dielectric samples, as in the metallic samples, correlates with their magnetization. We found that the Hall resistance is proportional to the square root of the longitudinal resistance, which cannot be explained by known models of the anomalous Hall effect.     

Giant Hall effect in (GaAs)Fe granular films

A series of (GaAs)_1 − xFe_x (x: volume fraction) films with Fe granules embedded in GaAs matrix were prepared by magnetron sputtering. Hall Effect of the films was characterized. The largest saturated Hall resistivity of was observed in (GaAs)₃₀Fe₇₀ film at room temperature, which is over 2 orders larger than that of pure Fe, about 1 order larger than that of (NiFe)–(Al₂O₃) and (NiCo)–(SiO₂) granular films prepared under the same preparation conditions, and 150% larger than that of Ge₃₀Fe₇₀.     

Field dependence of the anomalous Hall effect coefficient of granular alloys with giant Magnetoresistance

It is shown theoretically that the anomalous Hall effect (AHE) coefficient R _s of magnetic granular alloys exhibiting giant magnetoresistance (GMR) depends strongly and, in the general case, nonmonotonically on the magnetic field as a result of the effect of the field on the character of the charge-carrier scattering and the AHE. The experimental data, presented by H. Sato, H. Hemmi, Y. Kobayashi et al., J. Appl. Phys. 76, 6919 (1994), on the field dependence R _s (H) in Co-Ag granular alloys at low temperatures are explained. The presence of a maximum in the field dependence |R _s (H)| in annealed Co-Ag alloys attests to the fact that skew scattering plays a dominant role in the formation of the AHE and that the main carriers of the AHE in these alloys are states whose spin polarization is directed oppositely to the magnetization. The presence of a minimum in this dependence for unannealed samples indicates nonuniformity of the granule size distribution. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 6, 481–484 (25 March 1997)     

Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films

The anomalous Hall effect in disordered face-centered cubic （fcc） FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity （AHC） increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.     

Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films

The anomalous Hall effect in disordered face-centered cubic(fcc) FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity(AHC) increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.     

Dielectric study of polyaniline/poly (methylmethacrylate) composite films below the percolation threshold

We report results of dielectric relaxation studies of polyaniline/poly(methylmethacrylate) composites with polyaniline amount less than the percolation threshold in the frequency range of 0.1 Hz to 1 MHz and temperature range of 10 °C–170 °C. We find a significant dependence of the glass transition temperature Tg on the polyaniline amount in the composite. α and β relaxation processes relative to the PMMA matrix are also affected by the presence of polyaniline inclusion. We identify a relaxation process due to ionic conductivity and another process attributed to residual solvent. The characteristic relaxation frequency of each process and the activation energy depend on the polyaniline amount in the composite. The ac conductivity in the high frequency range is fitted to the universal power law of Jonscher characteristic of disordered materials.     

Scaling law of anomalous Hall effect in Fe/Cu bilayers

The scaling of anomalous Hall resistivity on longitudinal resistivity has been intensively studied in different magnetic systems, including multilayer and granular films, to examine whether a skew scattering or a side jump mechanism dominates in the origin of anomalous Hall effect (AHE). The scaling law is based on the premise that both resistivities are a consequence of electron scattering by the imperfections in the materials. By studying the anomalous Hall effect in the simple Fe/Cu bilayers, it was demonstrated that the measured anomalous Hall effect should not follow the scaling laws derived from skew scattering or side jump mechanism due to the short-circuit and shunting effects of the non-magnetic layers.     

Linear magnetization dependence of the intrinsic anomalous Hall effect

The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn5Ge3. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K but also at finite temperatures, up to about approximately 240 K (0.8TC).     

Giant Hall effect in nonmagnetic granular metal films.

Nearly 3 orders of magnitude enhancement in the Hall coefficient is observed in Cu(x)-(SiO(2))(1--x) granular films. This large enhancement of the Hall coefficient not only is significantly larger than the prediction of the classical percolation theory, but also occurs at a metal concentration identified to be the quantum percolation threshold. Measurements of the electron dephasing length and magnetoresistance, plus the TEM characterization of microstructures, yield a physical picture consistent with the mechanism of the local quantum interference effect.     

Temperature dependence of the Hall effect in high-temperature superconductors above and below Tc

We review the sign reversal of the Hall angle θ_H seen in many high-temperature superconductors in small magnetic fields. Preliminary data are presented for a tetragonal (and therefore untwinned) single crystal of YBa₂Cu₃O_7−δ with 4% of the Cu atoms replaced by Co; the sign reversal of θ_H is not seen. For an untwinned single-crystal sample of the undoped compound, the measured constant-pressure Hall-effect data above T_c are converted to constant-volume data, so direct comparison can be made with theory.     

FexSn100-x合金颗粒薄膜的反常霍耳效应

采用离子束溅射的方法制备了一系列不同原子比的Fe_xSn_100-x合金颗粒膜，系统地研究了该体系的反常霍耳效应.在该薄膜中发现了铁磁金属/非磁金属体系中最大的霍耳电阻率，讨论了不同原子配比、薄膜厚度对霍耳效应的影响.通过研究饱和霍耳电阻率ρ_xys同电阻率ρ_xx的关系，讨论了反常霍耳效应的机理. 关键词： 反常霍耳效应 xSn_100-x薄膜')" href="#">Fe_xSn_100-x薄膜     

Weak-localization correction to the anomalous Hall effect in polycrystalline fe films

In situ transport measurements have been made on ultrathin (<100 A thick) polycrystalline Fe films as a function of temperature and magnetic field for a wide range of disorder strengths. For sheet resistances Rxx less than approximately 3kOmega, we find a logarithmic temperature dependence of the anomalous Hall conductivity sigmaxy, which is shown for the first time to be due to a universal scale dependent weak-localization correction within the skew-scattering model. For higher sheet resistance, granularity becomes important and the break down of universal behavior becomes manifest as the prefactors of the lnT correction term to sigmaxx and sigmaxy decrease at different rates with increasing disorder.     

FexSn100-x合金颗粒薄膜的反常霍耳效应

采用离子束溅射的方法制备了一系列不同原子比的FexSn100-x合金颗粒膜,系统地研究了该体系的反常霍耳效应.在该薄膜中发现了铁磁金属/非磁金属体系中最大的霍耳电阻率,讨论了不同原子配比、薄膜厚度对霍耳效应的影响.通过研究饱和霍耳电阻率ρxys同电阻率ρxx的关系,讨论了反常霍耳效应的机理.     

Tb doping induced enhancement of anomalous Hall effect in NiFe films

Tbx(Ni0.8Fe0.2)1-x films with x≤0.14 are fabricated and the anomalous Hall effect is studied.The intrinsic anomalous Hall conductivity and the extrinsic one from the impurity and phonon induced scattering both increase with increasing x.The enhancement of the intrinsic anomalous Hall conductivity is ascribed to both the weak spin–orbit coupling enhancement and the Fermi level shift.The enhancement of the extrinsic term comes from the changes of both Fermi level and impurity distribution.In contrast,the in-plane and the out-of-plane uniaxial anisotropies in the Tb Ni Fe films change little with x.The enhancement of the Hall angle by Tb doping is helpful for practical applications of the Hall devices.     

Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

An obvious weak localization correction to anomalous Hall conductance(AHC) in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.