Study on a novel vertical enhancement-mode Ga2O3 MOSFET with FINFET structure

A novel enhanced mode(E-mode)Ga₂O₃ metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated.It is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state characteristics.The metal material of the gate,the oxide material,the oxide thickness,and the epitaxial layer concentration strongly affect the threshold voltage and the output currents.Enabling an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric constant.When the output current density of the device increases,the source concentration,the thickness of the epitaxial layer,and the total width of the device need to be expanded.The threshold voltage decreases with the increase of the width of the channel area under the same gate voltage.It is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga₂O₃ MOSFET requires the epitaxial layer concentration,the channel height of the device,the thickness of the source region,and the oxide thickness of the device should be less than 5×10¹⁶ cm^-3,less than 1.5μm,between 0.1μm-0.3μm and less than 0.08μm,respectively.     

常压MOCVD生长Ga2O3薄膜及其分析

以去离子水(H₂O)和三甲基镓(TMGa)为源材料,用常压MOCVD方法在蓝宝石(0001)面上生长出β-Ga₂O₃薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)以及二次离子质谱(SIMS)实验表征Ga₂O₃外延膜的质量.在X射线衍射谱中有一个强的Ga₂O₃(102)面衍射峰,其半峰全宽(FWHM)为0.25°,表明该Ga₂O₃外延膜是(102)择优取向.在二次离子质谱中除了C、H、O和Ga原子外,没有观测到其他原子.     

Enhanced luminescence from transparent Ni-doped MgO–Al2O3–SiO2 glass ceramics by Ga2O3 addition

Transparent Ni²⁺-doped MgO–Al₂O₃–SiO₂ glass ceramics without and with Ga₂O₃ were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga₂O₃ addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni²⁺-doped glass ceramics was largely enhanced by Ga₂O₃ addition which could mainly be caused by increasing of Ni²⁺ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga₂O₃ content was all more than 200 nm. The emission lifetime increased with the Ga₂O₃ content and the longest lifetime is about 250 μs. The Ni²⁺-doped transparent glass ceramics with Ga₂O₃ addition have potential application as broadband optical amplifier and laser materials.     

Nature of intrinsic luminescence in the glasses of CaO–Ga2O3–GeO2 system

The intrinsic luminescence of glasses of the CaO–Ga₂O₃–GeO₂ system has been investigated. High chemical purity and optical quality glasses, both undoped and doped with transition and rare-earth ions with different compositions, were obtained by high-temperature synthesis. The influences of the basic glass composition, impurities (Cr³⁺, Mn²⁺, Eu²⁺, Nd³⁺, Ho³⁺, Er³⁺, and Ce³⁺) and different kinds of excitation, on the intrinsic luminescence of the CaO–Ga₂O₃–GeO₂ glasses were investigated. The nature and possible mechanisms of the intrinsic luminescence in glasses of this system are discussed. The proposed models of intrinsic luminescence are supported by electron spin resonance spectroscopy.     

超宽禁带半导体β-Ga_2O_3及深紫外透明电极、日盲探测器的研究进展

β-Ga_2O_3是一种新型的超宽禁带氧化物半导体,禁带宽度约为4.9 eV,对应日盲区,对波长大于253 nm的深紫外一可见光具有高的透过率,是天然的日盲紫外探测及深紫外透明电极材料.本文介绍了Ga_20_3材料的晶体结构、基本物性与器件应用,并综述了β-Ga_2O_3在深紫外透明导电电极和日盲紫外探测器中的最新研究进展.Sn掺杂的Ga_2O_3薄膜电导率可达到32.3 S/cm,透过率大于88%,但离商业化的透明导电电极还存在较大差距.在日盲紫外探测器应用方面,基于异质结结构的器件展现出更高的光响应度和更快的响应速度,ZnO/Ga_2O_3核/壳微米线的探测器综合性能最佳,在-6 V偏压下其对254 nm深紫外光的光响应度达1.3×10~3A/W,响应时间为20μs.     

Degradation of β-Ga_2O_3 Schottky barrier diode under swift heavy ion irradiation

The electrical characteristics and microstructures of β-Ga_2 O_3 Schottky barrier diode(SBD) devices irradiated with swift heavy ions(2096 Me V Ta ions) have been studied. It was found that β-Ga_2 O_3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5 × 10~6–1.3 × 10~7 cm~(-1). Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga_2 O_3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually,these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, theβ-Ga_2 O_3 SBD devices were more sensitive to swift heavy ions irradiation than Si C and Ga N devices.     

In situ X-ray photoelectron spectroscopy study of the oxidation of CuGaSe2

The thermal and native oxidation of CuGaSe₂ thin films was studied by in situ X-ray photoelectron spectroscopy (XPS). The special design of the XPS chamber allowed to measure XP-spectra under oxidizing gas atmospheres at pressures of up to 5 mbar (in situ) or in ultra high vacuum (UHV). During thermal oxidation, the formation of predominantly Ga₂O₃ and some amount of SeO₂ were observed, but no copper oxides could be detected in the near surface region of the thin films. The same oxides were found after native oxidation in air under ambient conditions. Only after long term native oxidation for longer than 4 months Cu(OH)₂ was detected. An additional sodium oxide compound formed at the thin film surface, Na_xO and Na₂CO₃ after thermal and native oxidation, respectively. The amount of these sodium oxide compounds depends on the Na content on the as prepared surface. The formation of SeO₂ under humid conditions at 100 °C was found to depend on the surface composition of the thin film.     

Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass

The determination of band offsets is crucial in the optimization of Ga₂O₃-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces. In this work, the band offsets of the Ga₂O₃/FTO heterojunction are studied using x-ray photoelectron spectroscopy (XPS) based on Kraut's method, which suggests a staggered type-Ⅱ alignment with a conduction band offset (ΔE_C) of 1.66 eV and a valence band offset (ΔE_V) of -2.41 eV. Furthermore, the electronic properties of the Ga₂O₃/FTO heterostructure are also measured, both in the dark and under ultraviolet (UV) illuminated conditions (254 nm UV light). Overall, this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga₂O₃.     

Atomic-layer-deposited Al_2O_3 and HfO_2 on InAlAs: A comparative study of interfacial and electrical characteristics

Al_2O_3 and HfO_2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy(AR-XPS).It is demonstrated that the Al_2O_3 layer can reduce interfacial oxidation and trap charge formation.The gate leakage current densities are 1.37×10~6 A/cm~2 and 3.22×10~6 A/cm~2 at+1V for the Al_2O_3/InAlAs and HfO_2/InAlAs MOS capacitors respectively.Compared with the HfO_2/InAlAs metal-oxide-semiconductor(MOS) capacitor,the Al_2O_3/InAlAS MOS capacitor exhibits good electrical properties in reducing gate leakage current,narrowing down the hysteresis loop,shrinking stretch-out of the C-V characteristics,and significantly reducing the oxide trapped charge(Q_(ot)) value and the interface state density(D_(it)).     

An examination of the initial oxidation of a uranium-base alloy (U–14.1 at.% Nb) by O2 and D2O using surface-sensitive techniques

The corrosion resistance of uranium is greatly enhanced by alloying with niobium. In this study the initial stages of corrosion of a specific uranium-base alloy (U–14.1 at.% Nb) by O₂ or D₂O have been examined using the surface specific techniques of X-ray photoelectron spectroscopy (XPS), thermal programmed desorption (TPD), static secondary-ion mass spectroscopy (SSIMS), and sputtered neutrals mass spectroscopy (SNMS). XPS studies of the U–14.1 at.% Nb surface following oxidation using O₂ at 300 K indicate production of a thin oxide overlayer of stoichiometric UO_2.0 intermixed with Nb₂O₅. The same stoichiometry is exhibited for uranium when the oxide is prepared at 500 K with O₂; although, niobium is much less oxidized exhibiting a mixture of NbO and Nb. Contrary to previous XPS literature, SNMS depth profiling studies reveal that oxidation by O₂ is much greater (as judged by oxide layer thickness) than that exhibited by D₂O. An oxide layer thickness of less than 20 Å was created using D₂O as an oxidant at 300 K with exposures >3500 L (oxide layers created from O₂ are significantly greater at much smaller exposures). Formation of a critical density of Nb₂O₅ is suggested to be responsible for the enhanced corrosion resistance by preventing diffusion of O⁻ (O²⁻) or OD⁻/OH⁻ into the oxide/metal interface region. The domains of stability of hydroxyl formation have also been followed using TPD, SSIMS and XPS. Maximal surface hydroxyl concentrations (Θ_rel=0.30) are obtained at a surface temperature of 175 K for these experimental conditions.     

Ho,Yb: Tb3Ga5O12纳米粉体制备及发光性能研究

以Tb₄O₇和Ga₂O₃(化学计量比为3: 5)、Ho₂O₃、Yb₂O₃为原料,其中Yb³⁺的掺杂浓度为8at.%,Ho³⁺的掺杂浓度分别为0.5at.%、1at.%、1.5at.%、2.0at.%,以碳酸氢铵为沉淀剂,在1 200 ℃下烧结10 h得到了Ho,Yb: Tb₃Ga₅O₁₂(Ho,Yb: TGG)纳米粉体。对样品进行了XRD物相分析、热重-差热分析、红外光谱分析以及扫描电镜分析、上转换发射光谱分析。实验结果表明,温度为1 200 ℃下样品平均晶粒尺寸为38.10 nm。在泵浦源为980 nm激发下,Ho³⁺掺杂浓度为1.5at.%,Yb³⁺掺杂浓度为8at.%时,在红、绿、蓝波段范围内出现了明显的上转换发光现象,并对其形成机理进行了讨论。分析认为,Ho³⁺由激发态⁵S₂,⁵F₄向基态⁵I₈跃迁,实现了绿光输出,而Ho³⁺由激发态⁵F₅和⁵F₃向基态⁵I₈跃迁,分别实现了红光和蓝光输出。     

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化

采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而增加,添加Ti使界面质量恶化,进而使栅极漏电流增大、器件可靠性降低.因此,为了在器件电特性之间实现协调,对Ti含量进行优化显得尤为重要.就所研究的Ti/La_2O_3比率而言,18.4%的Ti/La_2O_3比率最合适.该比率导致器件呈现出高k值(22.7)、低D_(it)(5.5×10~(11)eV~(-1)·cm~(-2))、可接受的J_g(V_g=1V,J_g=7.1×10~(-3)A·cm~(-2))和良好的器件可靠性.     

Cu_2O/ZnO氧化物异质结太阳电池的研究进展

介绍了近年来低成本Cu_2O/ZnO氧化物异质结太阳电池方面的研究进展.应用于光伏器件的吸收层材料Cu_2O是直接带隙半导体材料,天然呈现p型;其原材料丰富,且对环境友好.Cu_2O/ZnO异质结太阳电池结构主要有平面结构和纳米线/纳米棒结构.纳米结构的Cu_2O太阳电池提高了器件的电荷收集作用;通过热氧化Cu片技术获得的具有大晶粒尺寸平面结构Cu_2O吸收层在Cu_2O/ZnO太阳电池应用中展现出了高质量特性.界面缓冲层(如i-ZnO,a-ZTO,Ga_2O_3等)和背表面电场(如p~+-Cu_2O层等)可有效地提高界面处能级匹配和增强载流子输运.10 nm厚度的Ga_2O_3提供了近理想的导带失配,减少了界面复合;Ga_2O_3非常适合作为界面层,其能够有效地提高Cu_2O基太阳电池的开路电压V_(oc)(可达到1.2 V)和光电转换效率.p~+-Cu_2O(如Cu_2O:N和Cu_2O:Na)能够减少器件中背接触电阻和形成电子反射的背表面电场(抑制电子在界面处复合).利用p型Na掺杂Cu_2O(Cu_2O:Na)作为吸收层和Zn_(1-x)Ge_x-O作为n型缓冲层,Cu_2O异质结太阳电池(器件结构:MgF_2/ZnO:Al/Zn_(0.38)Ge_(0.62)-O/Cu_2O:Na)光电转换效率达8.1%.氧化物异质结太阳电池在光伏领域展现出极大的发展潜力.     

Pinning potential of stacking fault-related dislocations in YBa2Cu3O7

The pinning potential of the 031 type dislocation has been calculated. This dislocation bounds the excess Cu---O layer defect commonly observed in YBa₂Cu₃O₇. It was found that there is a strong pinning anisotropy between edge dislocations lying along [100] and [010]. For the former, a repulsive potential of about 30 meV is found, while the latter exhibits an attractive interaction of less than this magnitude. This potential is short-range (about 2ξ), indicating that these dislocations would act as distributed point-like pinning sites.     

Annealing effects on the properties of Ga2O3 thin films grown on sapphire by the metal organic chemical vapor deposition

We have prepared the gallium oxide (Ga₂O₃) thin films on sapphire substrates by the metal organic chemical vapor deposition (MOCVD) technique. We have compared the two films with and without the thermal annealing by using the X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and the photoluminescence (PL) spectra. Postdeposition annealing of amorphous Ga₂O₃ films was found to increase the degree of crystallization and the surface roughness. The PL emission intensities of bands in the blue–green and the ultraviolet regions increased by the thermal annealing.     

High critical current density YBa2Cu3O7−δ tapes prepared by the surface-oxidation epitaxy method

YBa₂Cu₃O_7−δ (YBCO) films with high critical current density (J_c) were successfully fabricated on nickel tapes buffered with epitaxial NiO. NiO was prepared on the textured nickel tape by the surface-oxidation epitaxy (SOE) method. We have reported so far a critical temperature (T_c) of 87 K and J_c=4–6×10⁴ A/cm² (77 K, 0 T) for the YBCO films on NiO/Ni tapes. To enhance the superconducting properties of the YBCO films on the SOE-grown NiO, depositions of thin oxide cap layers such as YSZ, CeO₂, and MgO on NiO were investigated. These oxide cap layers were epitaxially grown on NiO and provided the template for the epitaxial growth of YBCO films. Substantially improved data of T_c=88 K and J_c=3×10⁵ A/cm² (77 K, 0 T) and 1×10⁴ A/cm² (77 K, Hc, 4 T) were obtained for YBCO film on NiO, by using a MgO cap layer with a thickness of 50 nm. The method described in this paper is a simple way to produce long YBCO tape conductors with high-J_c values.     

高温条件下Ga3PO7晶体热学及声表面波性质的理论研究

高温压电晶体是许多机电器件必需的一种多功能材料, Ga₃PO₇晶体的居里温度高达1364 ℃, 可应用于高温极限条件. 但是预测高温极限条件下晶体的结构以及物理性质的问题采用实验研究的手段非常困难, 而理论上的预测未见研究. 本文采用密度泛函-准谐振近似理论计算了温度在0-1200 ℃范围内Ga₃PO₇ 晶体的结构常数和热学性质, 结果表明Ga₃PO₇晶体的晶格常数a和c随温度的升高呈线性增大, 且c方向受温度影响更为显著; 晶体的密度随温度的升高而减小, 计算的a 和c方向平均热膨胀系数分别为1.67×10^-6 K^-1和3.58×10^-6 K^-1, 高温区定压热容为2.067 J/g·K, 与实验值一致. 计算了从常温到高温下该晶体的弹性常数以及体弹性模量的变化, 研究了高温条件下的声表面波特性, 发现随着温度的升高, 声表面波速度浮动较小, 而机电耦合系数略有增大; 在传播角为151° 时该晶体具有较好的温度稳定性且机电耦合系数达到最大值, 这表明Ga₃PO₇ 晶体是一种有望应用于高温环境下的压电晶体.     

Solid-state synthesis of potassium β- and β″-gallates

Direct synthesis of K-β- and β″-gallates by Ga₂O₃–K₂O solid-state reaction is described. The formation of K-β- or β″-gallates depends on the initial Ga₂O₃ phase. -Ga₂O₃ leads to K-β-gallate; β-Ga₂O₃ leads to K-β″-gallate. K-β″-Gallate is stable <1200°C. The high temperature stability of K-β″-gallate can be enhanced by doping with aliovalent ions.     

Electrochemical performance of mixed ionic–electronic conducting oxides as anodes for solid oxide fuel cell

Mixed ionic–electronic conducting (MIEC) oxides, SrFeCo_0.5O_x, SrCo_0.8Fe_0.2O_3−δ and La_0.6Sr_0.4Fe_0.8Co_0.2O_3−δ have been synthesized and prepared on yttria-stabilized zirconia as anodes for solid oxide fuel cells. Power output measurements show that the anodes composed of such kinds of oxides exhibit modest electrochemical activities to both H₂ and CH₄ fuels, giving maximum power densities of around 0.1 W/cm² at 950°C. Polarization and AC impedance measurements found that large activation overpotentials and ohmic resistance drops were the main causes for the relative inferior performance to the Ni-YSZ anode. While interlayered with an Ni-YSZ anode, a significant improvement in the electrochemical performance was observed. In particular, for the SrFeCo_0.5O_x oxide interlayered Ni-YSZ anode, the maximum power output reaches 0.25 W/cm² on CH₄, exceeding those of both SrFeCo_0.5O_x and the Ni-YSZ, as anodes alone. A synergetic effect of SrFeCo_0.5O_x and the Ni-YSZ has been observed. Future work is needed to examine the long-term stability of MIEC oxide electrodes under a very reducing environment.     

Microstructure and oxidation of hot-dip aluminized titanium at high temperature

High-temperature diffusion of a hot-dip aluminized titanium is conducted to study microstructure changes and oxidation behavior of the aluminized titanium. After aluminizing, the titanium substrate is covered by a black layer in which tiny block-shaped TiAl₃ particles are scattered in aluminum matrix. Based on the diffusion experiment results, the thickness of the aluminum diffusion layer at 800 °C increases with diffusion time. However, the aluminum diffusion layer at 900 °C grows and reaches its maximum thickness in 6 h, and then the thickness of the aluminum diffusion layer is reduced with prolonged diffusion time. An inversion of the diffusion layer thickness versus time appears for the aluminized titanium treated at 1000 °C, and the thickness of the diffusion layer keeps declining with diffusion time. The phases present in the outer and middle sublayers are titanium-rich TiAl₃ and equilibrium TiAl₃, respectively. However, the phase in inner sublayer changes from titanium-rich TiAl₃ to TiAl₂ and TiAl as diffusion temperature and time increase. Through energy-dispersive X-ray and X-ray diffraction analysis, the oxides formed in the oxidation process are Al₂O₃ and Al₂TiO₅. Although the oxide scale formed on the surface of the aluminized titanium has an insufficient stability and integrity, the thermal oxidation resistance of the aluminized titanium is still improved by over 5 times compared with that of the pure titanium.