共查询到17条相似文献,搜索用时 250 毫秒
1.
利用密度泛函理论(DFT)对GanN-(n=2—8)和GanN-2 (n=1—7)阴离子团簇的结构及稳定性进行了研究.在B3LYP/6-31G*水平上进行了结构优化和频率分析,得到了GanN-(n=2—8)和GanN-2(n=1—7)阴离子团簇的基态结构.在这些团簇中,原子总数小于等于6的团簇的几何结构为平面结构,原子总数大于6的团簇的几何结构为立体结构;在所研究的团簇中,Ga4N-,Ga6N-,Ga4N-2和Ga5N-2的基态结构较稳定.
关键词:
nN-m团簇')" href="#">GanN-m团簇
密度泛函理论(DFT)
几何结构 相似文献
2.
用密度泛函理论(DFT)的杂化密度泛函B3LYP方法在6-31G*基组水平上对(Ca3N2)n(n=1—4)团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构.并对最稳定结构的振动特性、成键特性、电荷特性和稳定性等进行了理论分析.结果表明,(Ca3N2)n(n=1—4)团簇最稳定构型中N原子为3—5配位,Ca—N键长为0.231—0.251nm,Ca—Ca键长为0.295—0.358nm;N原子的自然电荷在-1.553e—-2.241e之间,Ca原子的自然电荷在1.035e—1.445e之间,Ca和N原子间相互作用呈现较强的离子性,Ca3N2和(Ca3N2)3团簇有相对较高的动力学稳定性.
关键词:
3N2)n(n=1—4)团簇')" href="#">(Ca3N2)n(n=1—4)团簇
密度泛函理论
结构与性质 相似文献
3.
利用密度泛函理论(DFT)对GanP和GanP2 (n=1—7)团 簇的几何结构、电子态及稳定 性进行了研究. 在B3LYP/6-31G*水平上进行了结构优化和频率分析,得到了Ga nP和GanP2(n=1—7) 团簇的基态结构. 结果表明,n≤ 5团簇的几何结构基本上为平面结构,n > 5的团簇均为立体结构;在GanP2 (n=1—6)团簇中,P-P比Ga-P容易 成键;在GanP和G anP2 (n=1—7) 团簇中,Ga3P, Ga4P, Ga P2, Ga2P2 和 Ga4P2的基态结构最稳定,在所研究的团簇中,稳定性随团簇总原 子数的增大而减小.
关键词:
nPm团簇')" href="#">GanPm团簇
密度泛函理论(DFT)
几何结构
电子态 相似文献
4.
利用密度泛函理论(DFT)的B3LYP方法,采用全电子基组6-311+G(d)研究了CuSi6团簇的几何构型和电子结构性质,计算表明CuSi6团簇存在多个能量相近的稳定异构体,且结构中存在多个Cu-Si键,多个低能异构体共存解释了实验中观察到的CuSi6团簇较强的现象.对于CuSi6团簇,计算得到的三个最稳定异构体的垂直电离能,电子亲和能和HOMO-LUMO能隙均相对较大,也表明这三个异构体较为稳定. 相似文献
5.
采用密度泛函理论(DFT)中的B3LYP方法和BP86方法,对Ga3S2-团簇和Ga4S3-团簇进行结构优化,并计算和分析了最稳定结构的成键性质及振动特性.计算结果表明,Ga3S2-团簇和Ga4S3-团簇的最稳定结构是由"Ga-S-Ga"结构单元和处于端位的"Ga-S"结构单元组成的.键级分析表明上述两结构单元都具有较强的稳定性.此外,通过分析红外振动光谱数据也发现在"Ga-S-Ga"单元和"Ga-S"单元处有红外强峰出现. 相似文献
6.
在密度泛函理论的基础上,对Ga6N6团簇进行了第一性原理、全电子、从头计算,得到了10种可能的三维空间结构及其电子结构.其中最稳定结构的一对GaN原子的平均结合能为9.748 eV,因此是可能存在的.但与他人计算的Ga3N3和Ga5N5相比,Ga6N6团簇可能不属于"幻数"团簇.最稳定结构的Ga6N6团簇的费米面是部分占有的,能量为EF=-5.2972 eV,因此具有"金属性",但没有自旋磁矩.我们还计算了该结构的Ga6N6团簇的亲和势、电离能和电子跃迁能.这将有助于对GanNn团簇系列的结构和性质随n变化的研究. 相似文献
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采用基于密度泛函理论的第一性原理平面波超软赝势方法研究了GaN/g-C3N4异质结的稳定性、电子结构、光学性质及功函数,同时考虑了电场效应.结果表明:GaN/g-C3N4范德瓦耳斯异质结的晶格失配率(0.9%)和晶格失配能极低(-1.230 meV/?~2,1?=0.1 nm),说明该异质结稳定性很好,且该异质结在很大程度上保留了GaN和g-C3N4的基本电子性质,可作为直接带隙半导体材料.同时,GaN/g-C3N4异质结在界面处形成了从GaN指向g-C3N4的内建电场,使得光生电子-空穴对可以有效分离,这有利于提高体系的光催化能力.进一步分析可知,外加电场使GaN/g-C3N4异质结的禁带宽度有着不同程度的减小,使得电子从价带跃迁至导带更加容易,有利于提高体系的光催化活性;此外,当外加电场高于0.3 V/A以及低于-0.4 ... 相似文献
9.
利用密度泛函理论在B3LYP/6-311G*水平上对叠氮化合物(HMgN3)n(n=1–5)团簇各种可能构型进行了几何优化,预测了各团簇的最稳定结构. 并对最稳定结构的成键特性、电荷分布、振动特性及稳定性进行理论研究. 结果表明:HMgN3团簇最稳定结构为直线型;(HMgN3)n(n=2,5)团簇最稳定结构为叠氮基中N原子和金属原子相连构成Mg–N–Mg结构;(HMgN3)n(n=3,4)团簇最稳定结构为叠氮基与Mg原子相互链接形成的环状结构. 团簇最稳定结构中金属Mg原子均显示正电性,H原子均显示负电性,叠氮基中间的N原子显示正电性、两端的N原子显示负电性,且与Mg原子直接作用的N原子负电性更强. Mg–N键和Mg–H键为典型的离子键,叠氮基内N原子之间是共价键. 团簇最稳定结构的红外光谱分为三部分,其最强振动峰均位于2258–2347 cm-1,振动模式为叠氮基中N–N键的反对称伸缩振动. 叠氮基在团簇和晶体中结构不变,始终以直线型存在. 稳定性分析显示,(HMgN3)3团簇相对于其他团簇更为稳定.
关键词:
3)n(n=1–5)团簇')" href="#">(HMgN3)n(n=1–5)团簇
叠氮基
密度泛函理论
结构与性质 相似文献
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11.
Ga_nN_3(n=1~8)团簇几何结构及光电子能谱的研究 总被引:2,自引:2,他引:0
用密度泛函理论的B3LYP方法在6-31G*的水平上,对GanN3(n=1~8)团簇的结构进行优化,并对体系的成键特性、光电子能谱及稳定性进行了计算与分析,得到了GanN3(n=1~8)团簇的最稳定结构.结果表明,当n≤5时,其基态几何结构为平面结构,N-N键在这些团簇的形成过程中起着决定性的作用;当n≥6时,其基态几何结构为立体结构,Ga-N键起主导作用;在所研究的团簇中,Ga4N3、Ga7N3的基态结构最稳定;随着n值的增大,平均极化率逐渐增强;通过对光电子能谱的分析,得到Ga-N键的振动频率与六方晶系纤锌矿结构GaN的光学声子峰值相近. 相似文献
12.
《Physics letters. A》2002,306(1):57-61
The structures and energies of a Ga5N5 cluster have been calculated using a full-potential linear-muffin-tin-orbital (FP-LMTO) method, combined with molecular dynamics technique. Twenty-four structures for a Ga5N5 cluster have been obtained. The most stable structure is a C1 planar structure with a N3 subunit. The Ga5N5 clusters show a preference for a N3 subunit, revealing the same behavior as in the Ga3N3 and Ga4N4 clusters. The existence of strong N–N bonds dominates the structure of a Ga5N5 cluster. Through the calculation of the density of states we found that the most stable structure of Ga5N5 clusters presented semiconductor-like properties. 相似文献
13.
In this paper, possible structures of GasP5 cluster were optimized by using density functional method with generalized gradient correction (B3LYP). The electronic structure of the isomers with lower energy was studied. The most stable structure obtained for GasP5 is a distorted pentaprism. The Ga-P bond formed in the cluster is strongly ionic. Based on NBO analysis, an average value of 0.59 electron transfers from Gallium to Phosphorus. The bond length 2.33-2.43 is around the value in bulk GaP. The HOMO-LUMO gap is about 2.2 eV. The dipole moment and polarizability are calculated, and the IR and Raman spectra are also presented. 相似文献
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15.
M.R Manaa 《Solid State Communications》2004,129(6):379-383
I report electronic structures and the cohesive energy for face-centered-cubic (fcc) solid C48N12 using generalized-gradient density-functional theory. The full vibrational spectrum of the C48N12 cluster is calculated within the harmonic approximation at the B3LYP/6-31G* level of theory. The results show that fcc is energetically preferred and a more stable crystal form than body-centered-cubic (bcc). C48N12 clusters are found to condense by a weak (0.29 eV) van der Waals force. The band gap of fcc C48N12 is calculated to be 1.3 eV at the GGA-PW91 level, whereas the HOMO-LUMO gap is calculated to be 2.74 eV using B3LYP/6-31G*. 相似文献
16.
A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga2O3/6H-SiC electronic devices. 相似文献
17.
First-principles study of Ga7As7 ionic cluster and influence of multi-charge on its structure 下载免费PDF全文
This paper investigates the structures and stabilities of neutral Ga7As7 cluster and its ions in detail by using first-principles density functional theory. Many low energy structures of Ga7As7 cluster are found. It confirms that the ground state structure of neutral Ga7As7 cluster is a pentagonal prism with four face atoms like a basket structure, as reported by previous works. The ground state structures of positive Ga7As7 cluster ions are different from that of the neutral cluster. These investigations suggest that Ga atoms occupy the capping positions more easily than As atoms. Mulliken population analyses also show that Ga atoms can lose or obtain charge more easily than As atoms. It finds that the neutral Ga7As7 cluster can become more stable by gaining one or two additional electrons but further more electrons would cause the decrease of binding energy. The ionisation energy increases with the increase of the number of the removed electrons. These calculated results indicate that the net magnetic moment of the neutral Ga7As7 cluster is zero because all electrons are paired together in their respective molecular orbits. But for the ionic Ga7As7 cluster with odd number of electrons, the net magnetic moment is 1.0 μB due to an unpaired electron. 相似文献