Earth optimization of space experiment on growth of germanium by floating-zone technique with the use of rotating magnetic fields

The results are considered of the earth experiments on growth of high-purity and Ga-doped germanium single crystals 15 mm in diameter and 60 mm in length, which were performed in a Zona-4 “space furnace” under the technological regimes close to those existing in space orbits. It is shown that the use of a magnetohydrodynamic (MHD) factor [weak (0.15–0.2 mT) rotational (400 Hz) magnetic fields] during crystallization of semiconductors by the floating-zone technique is a very promising method for control of dopant distributions and electrophysical properties in a growing crystal. It is shown that in such magnetic fields, the effective coefficient of Ga distribution in Ge decreases by 10%. The shift of the donor-acceptor balance of the residual dopants in a compensated semiconductor during growth with the MHD-stirring of the melt was first established in growth of undoped germanium single crystals. It was also established that magnetic fields produce different effects on the resistivity microinhomogeneity in undoped and doped crystals. The mechanisms of the MHD effect on the properties of the grown crystals are discussed as well as the perspectives of performing analogous experiments aboard spacecrafts. It is predicted that, under the microgravitation conditions, the effects revealed in terrestrial experiments would be more pronounced.     

熔体法生长大尺寸有机晶体

大尺寸有机晶体在太赫兹波产生、中子探测、微波激射等多个关系国计民生、涉及国家安全的领域具有重要应用前景.但大尺寸有机单晶生长一直是国际公认的难题,无论是在生长理论、生长方法还是生长设备方面都远远落后,在整个人工晶体领域相对小众;而且有机晶体硬度低、脆性高、易解理等本征特性为加工和后期应用带来了很多困难,制约了相关领域的...     

Crystal growth,thermal, optical and microhardness studies of tris (thiourea) zinc sulphate - a semiorganic NLO material

Tris (thiourea) zinc sulphate (ZTS), a semiorganic nonlinear optical (NLO) material has been synthesized at 30 °C. The solubility was determined in different solvents such as water, ethanol and water mixture of ethanol (1:1). Good quality single crystals with size 10 × 8 × 6 mm³ were grown by slow evaporation technique within three weeks with approximate growth rate of 0.5 mm/day. The grown crystals have been subjected to single crystal X-ray diffraction to determine the unit cell dimensions and morphology. The TGA and DTA reveal that the material has good thermal stability. The UV-Vis spectrum shows that the material has wide optical transparency in the entire visible region. The second harmonic generation was confirmed by Kurtz powder method. The birefringence of the crystal was measured in the visible region and it was found to vary with the wavelength. The microhardness test was carried out in (100) plane and the load dependent hardness was measured. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)     

System of Mathematical Models for the Analysis of Industrial FZ-Si-Crystal Growth Processes

A system of coupled mathematical models and the corresponding program package is developed to study the interface shape, heat transfer, thermal stresses, fluid flow as well as the transient dopant segregation in the floating zone (FZ) growth of large silicon crystals (diameter more than 100mm) grown by the needle-eye technique. The floating zone method with needle-eye technique is used to produce high-purity silicon single crystals for semiconductor devices to overcome the problems resulting from the use of crucibles. The high frequency electric current induced by the pancake induction coil, the temperature gradients and the feed/crystal rotation determine the free surface shape of the molten zone and cause the fluid motion. The quality of the growing crystal depends on the shape of the growth interface, the temperature gradients and corresponding thermal stresses in the single crystal, the fluid flow, and especially on the dopant segregation near the growth interface. From the calculated transient dopant concentration fields in the molten zone the macroscopic and microscopic resistivity distribution in the single crystal is derived. The numerical results of the resistivity distributions are compared with the resistivity distributions measured in the grown crystal.     

FTIR spectroscopic,thermal and growth morphological studies of calcium hydrogen phosphate dihydrate crystals

Calcium hydrogen phosphate dihydrate (CHPD or DCPD) is found quite frequently in urinary calculi (stones). The CHPD crystals were grown by the single diffusion gel growth technique in sodium metasilicate gel. The crystals were found to be having platelet and broad needle type morphologies. The crystals were analyzed by FTIR spectroscopy. The thermal properties were studied by employing the thermogravimetric analysis. Various kinetic and thermodynamic parameters for dehydration were estimated. The selected platelet was studied by SEM for the growth morphologies indicating that the crystals grew in the form of leaflets having prominent (010) faces. This was in agreement with earlier reported studies. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

核辐射探测单晶生长方法研究进展

核辐射探测是指用各种核辐射探测器来得到核辐射信息的过程,在军用、民用和科研等领域具有广泛的应用。作为核辐射探测核心的核辐射探测器,主要分为气体探测器、闪烁体探测器和半导体探测器。相比于气体探测器,闪烁体探测器和半导体探测器都需要晶体作为核心材料,晶体质量的品质在很大程度上决定了探测器性能的上限。为了获得性能更好的探测器,人们对探测器用单晶材料的生长方法进行了大量的研究。本文综述了近几年核辐射探测单晶生长方法研究的最新进展,总结了目前主流的晶体生长方法,包括溶液法、熔体法、气相法等,并对不同晶体的主要生长方法进行了归纳。     

Investigation on growth,optical, thermal,mechanical and dielectric studies of Benzimidazolium L-aspartate NLO crystal

The organic salt of Benzimidazolium L-aspartate (BLA) has been synthesised and single crystals were grown by slow evaporation solution growth technique at room temperature using water as the solvent. The grown crystal was subjected to single crystal X-ray diffraction analysis and confirmed it belongs to monoclinic crystal system with space group P2₁/c. The crystalline perfection was studied using High resolution X-ray diffraction (HRXRD). The functional groups were analysed by FT-IR analysis. The optical transmittance and the lower cut-off wavelength of the BLA crystal have been identified by UV-Vis study. The thermal stability of the title crystal was investigated by TGA/DTA analyses. The Vickers microhardness analysis was carried out to study the mechanical strength of the crystal. The dielectric response of the crystal was studied in the frequency range 100 to 5 MHz at different temperatures. The surface morphology of the grown BLA crystal was studied by scanning electron microscopy (SEM). The second harmonic generation efficiency was measured in comparison with KDP by employing Kurtz Perry Powder method.     

Effect of ammonium malate on growth rate,crystalline perfection,structural, optical,thermal, mechanical,dielectric and NLO behaviour of ammonium dihydrogen phosphate crystals

The effect of ammonium malate on the growth rate, structural, optical, thermal, mechanical, dielectric properties, crystalline perfection and second harmonic generation (SHG) efficiency of ammonium dihydrogen phosphate single crystals grown by the slow cooling method has been investigated. The lattice parameters of the grown crystals were obtained by the single-crystal X-ray diffraction analysis. Fourier transform infrared studies confirm the functional groups of the crystals. UV–vis study shows that the transparency is increased much by the dopant. Thermal analysis was performed to study the thermal stability of the grown crystals. Vickers hardness measurements reveal the higher hardness of the doped crystals. Low dielectric losses were observed from the dielectric measurements for the doped ADP crystals. The high-resolution X-ray diffraction studies show that the crystalline perfection of the crystals is good. The relative SHG efficiency measurements revealed that the dopant has enhanced the efficiency.     

Synthesis,crystal growth,spectral, thermal and optical properties of acenaphthene picrate

The crystalline material of acenaphthene picrate (ACP) was synthesized and the single crystals of the title compound grown by slow evaporation solution growth technique. The solubility of the complex compound was estimated using different solvents as chloroform, ethanol, (1:1) chloroform ‐ acetone mixture. The material was characterized through elemental analysis; powder XRD, NMR and FTIR techniques. The various planes of reflection have been identified from the XRD powder pattern. The formation of the charge transfer complex was confirmed by UV‐VIS spectroscopy. The thermal stability of the crystals was studied using TG/DTA analyses techniques. The second harmonic generation (SHG) of the material was confirmed by using Nd: YAG laser. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth

It has been known that, in growing silicon from melts, vacancies (Vs) predominantly exist in crystals obtained by high-rate growth, while interstitial atoms (Is) predominantly exist in crystals obtained by low-rate growth. To reveal the cause, the temperature distributions in growing crystal surfaces were measured. From this result, it was presumed that the high-rate growth causes a small temperature gradient between the growth interface and the interior of the crystal; in contrast, the low-rate growth causes a large temperature gradient between the growth interface and the interior of the crystal. However, this presumption is opposite to the commonly-accepted notion in melt growth. In order to experimentally demonstrate that the low-rate growth increases the temperature gradient and consequently generates Is, crystals were filled with vacancies by the high-rate growth, and then the pulling was stopped as the extreme condition of the low-rate growth. Nevertheless, the crystals continued to grow spontaneously after the pulling was stopped. Hence, simultaneously with the pulling-stop, the temperature of the melts was increased to melt the spontaneously grown portions, so that the diameters were restored to sizes at the moment of pulling-stop. Then, the crystals were cooled as the cooling time elapsed, and the temperature gradient in the crystals was increased. By using X-ray topographs before and after oxygen precipitation in combination with a minority carrier lifetime distribution, a time-dependent change in the defect type distribution was successfully observed in a three-dimensional manner from the growth interface to the low-temperature portion where the cooling progressed. This result revealed that Vs are uniformly introduced in a grown crystal regardless of the pulling rate as long as the growth continues, and the Vs agglomerate as a void and remain in the crystal, unless recombined with Is. On the other hand, Is are generated only in a region where the temperature gradient is large by low-rate growth. In particular, the generation starts near the peripheral portion in the vicinity of the solid–liquid interface. First, the generated Is are recombined with Vs introduced into the growth interface, so that a recombination region is always formed which is regarded as substantially defect free. Excessively generated Is after the recombination agglomerate and form a dislocation loop region. Unlike conventional Voronkov's diffusion model, Is hardly diffuse over a long distance. Is are generated by re-heating after growth.[In a steady state, the crystal growth rate is synonymous with the pulling rate. Meanwhile, when an atypical operation is performed, the pulling rate is specifically used.]This review on point defects formation intends to contribute further silicon crystals development, because electronic devices are aimed to have finer structures, and there is a demand for more perfect crystals with controlled point defects.     

Structural,thermal, mechanical and z‐scan studies on 4‐nitrophenol single crystals

4‐nitrophenol (4‐NP) single crystals have been grown by using slow evaporation and slow cooling techniques. A single crystal with size in the range of 7x3.4x1.8cm³ has been obtained by slow cooling method. The grown crystals have been subjected to various characterization studies. The powder XRD spectrum of 4‐NP reveals the good crystalline nature of the grown crystal. Single crystal XRD studies show that the crystal belongs to monoclinic system with cell parameters of a=6.09 Å, b=8.79 Å, c=11.61 Å, α=γ=90°, β=103.15°. The resultant FTIR spectrum confirms the various functional groups present in 4‐NP. Thermal analysis has been performed on the material to study the thermal stability of 4‐NP. The grown crystals belong to the category of soft materials as confirmed by Vickers Hardness tests. The optical transmiitance of 4‐NP single crystals has been measured from Vis‐IR spectroscopy study. The nonlinear optical properties have been analyzed by z‐scan technique and 4‐NP is found to be self defocusing because of its negative nonlinear refractive index. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Induced growth of Pb0.97La0.02(Zr0.66Sn0.27Ti0.07)O3 antiferroelectric single crystals with a platinum wire

Relaxor antiferroelectric (Pb,La)(Zr,Sn,Ti)O₃ (PLZST) with the composition near the morphotropic phase boundary shows excellent electrical properties. However, the crystal growth of PLZST is limited by the incongruent melting of the materials. Crystal growth of PLZST was induced by a platinum wire in the flux solution with 50 wt% PbO‐PbF₂‐B₂O₃ as a solvent. The obtained PLZST single crystals are optical transparent with light yellow color. The size of the crystals in regular rectangular shape varies from 0.5 mm to 1 mm. The PLZST single crystals exhibit tetragonal phase structure. The element contents of the crystals were measured by inductively coupled plasma atomic emission spectrometry. The results show that the composition of as‐grown crystals is a little bit deviated from the starting composition. The single crystals show two dielectric peaks at 115 °C and 182 °C, corresponding to antiferroelectric‐ferroelectric and ferroelectric‐paraelectric phase transitions. The dielectric data of as‐grown crystals indicate there is typical relaxor behavior near 182 °C. The value of relaxor factor n is 1.49642.     

Spectroscopic, thermal and structural studies on manganous malate crystals

Prismatic crystals of manganous malate have been prepared by controlled ionic diffusion in hydrosilica gel. The structure was elucidated using single crystal X-ray diffraction. The crystals are orthorhombic with space group Pbca. Vibrations of the functional groups were identified by the FTIR spectrum. Thermogravimetric and differential thermal analyses (TG-DTA) were carried out to explore the thermal decomposition pattern of the material. Structural information derived from FTIR and TG-DTA studies is in conformity with the single crystal XRD data.     

Rotating magnetic fields: Fluid flow and crystal growth applications

Rotating or alternating magnetic fields are widely used in the industrial steel casting process or in metallurgical manufacturing. For the growth of single crystals, these techniques attracted a rapidly increasing attention within the last years: a well defined melt flow leads to a more homogeneous temperature and concentration distribution in the melt and consequently improves the growth process. Rotating magnetic fields (RMF) might be used instead of crucible and/or crystal rotation avoiding mechanically induced disturbances or might be added to conventional rotation mechanisms to gain a further flow control parameter. Compared to static magnetic fields, rotating ones are distinguished by a much lower energy consumption and technical effort. Furthermore, there are no reports on detrimental effects such as the generation of thermoelectromagnetic convection or coring effects in the grown crystals. One advantage of rotating magnetic fields is the possibility to apply them even to melts with a rather low electrical conductivity like e.g. aqueous solutions. High flow velocities are already generated with moderate fields. Therefore the field strength has to be adjusted with care because otherwise undesirable Taylor vortices might be induced. In the last years, the potential of rotating magnetic fields for crystal growth processes was demonstrated for model arrangements using e.g. gallium or mercury as a test liquid as well as for a variety of growth techniques like Float Zone, Czochralski, Bridgman, or Travelling Heater Methods: Fluctuations of the heat transport due to time-dependent natural convection have could be reduced by more than an order of magnitude or the mass transport could be improved with respect to the a better radial symmetry and/or a more homogeneous microscopic segregation.     

Growth,spectral and thermal studies of ibuprofen crystals

RS ‐Ibuprofen was crystallized for the first time in silica gel under suitable pH conditions by reduction of solubility method. The grown crystals were characterized by single crystal X‐ray diffraction and density measurement. The functional groups present in the crystal were identified using Fourier transform infrared spectroscopy. Optical bandgap energy of ibuprofen was estimated as 3.19(3) eV from UV‐Vis spectrum. Thermogravimetric analysis revealed that ibuprofen is thermally stable upto 102.9 °C and the initial loss of mass was due to evaporation only. Morphological study showed that the growth is prominent along b‐axis and the prominent face is {100}. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth,optical and thermal studies of nonlinear optical L‐arginine perchlorate single crystals

A potentially useful semiorganic nonlinear optical (NLO) material, L‐arginine perchlorate, has been synthesized and bulk crystals have been grown by slow cooling technique. The grown crystals were characterized by single crystal X‐ray diffraction, UV‐Vis‐NIR spectroscopy, FT‐IR, thermal analysis and SHG measurements. The grown crystals were thermally stable upto 153°C and exhibit SHG efficiency of about 0.17 with respect of Urea. The etching studies have been carried out on the grown crystal. LAPC has good optical transmission not only in the visible range, however, also in the near UV part of the spectra and hence it is a potential material for nonlinear frequency conversion. The refractive index was measured by the Brewster's angle method. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis,structural and thermal studies of tetrathioureacopper(I) chloride crystals

Tetrathioureacopper(I) chloride, hereafter abbreviated as TCC, was synthesised and single crystals were obtained from saturated aqueous solution by slow evaporation (solution growth) method at room temperature. The crystals obtained are bright, colourless and transparent having well defined external faces. The grown crystals were characterized through elemental analysis, single crystal X‐ray diffraction study, thermal analysis, electron spin resonance spectroscopy and Fourier Transform infrared spectroscopy. The elemental analysis confirms the stoichiometry of the compound. The single crystal diffraction studies indicate that TCC crystallises in the tetragonal lattice and the unit cell parameters are a = b = 13.4082 Å, c = 13.8074 Å, V = 2482.29 ų, α = β = γ = 90°. Space group and the number of molecules per unit cell (Z) are found to be P4₁2₁2 and 8 respectively. The TG curve of the sample shows a prolonged decomposition from 210 to 628.3 °C, from which the decomposition pattern has been formulated. The endothermic peaks in the DTA curve indicate melting and decomposition of the compound at 165.2 and 633.8 °C respectively. An exothermic peak in high temperature DSC indicates a phase transition in the compound at 274.8 °C. Thermal anomalies observed in the low temperature DSC at –163.3, –152.0, –141.5, –108.3, 1.0 and 12.1 °C in the heating run and –157.1 and –153.9 °C in the cooling run reveal first order phase transitions in the crystal. The peaks observed at –146.2 °C in both the heating and cooling runs suggest occurrence of a second order phase transition in this compound. The IR spectroscopic data were used to assign the characteristic vibrational frequencies of various groups present in the compound. The ESR study confirms that the copper is in the +1 oxidation state in the complex. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth behaviour of bulk GaN single crystals grown with various flux ratios using solvent‐thermal method

Bulk GaN single crystals were grown using a solvent‐thermal method. They were grown for 200 h at 600 °C and 800 °C using 8 MPa of N₂ gas and 1–3 mm sized pyramid GaN single crystals. Pure Na, NaN₃ and Ca were used as the flux. The mole fraction of the [flux]/([flux] + [Ga]) was 0.30–0.67. The growth behavior differed according to the flux ratio. The quality of the bulk GaN single crystals was improved by increasing the flux ratio. The bulk GaN single crystals formed by spontaneous nucleation were deposited on the BN crucible wall and bottom during the first step of synthesis. The wurtzite structure of the GaN grown single crystal was confirmed by x‐ray diffration. The chemical composition was analyzed by electron probe microanalysis. The quality and optical properties of the GaN single crystal were examined by Raman spectroscopy and photoluminesence analysis. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and basic dielectric data of high quality TSCC crystals

Tris-sarcosine calcium chloride (TSCC) single crystals were grown from water solutions by the isothermal evaporation method. The growth solutions contained sarcosine and CaCl₂ either in stoichiometric or nonstoichiometric ratio. The required phase diagram sarcosine–CaCl₂ H₂O at 40 °C was determined by the synthetic method. PFT 400 MHz NMR was used for the analysis of organic impurities in sarcosine and TSCC. The crystals grown from both types of solutions had maximum values of the dielectric permittivity 10 to 200 times larger than those measured by other authors at comparable measuring frequencies and fields. It is discussed in terms of crystal quality.     

Critical behaviour and internal bias of TGS and isomorphous crystals depending on growth conditions

The critical behaviour of TGS and isomorphous DTGS, TGSe and DTGSe single crystals grown at various conditions was investigated. The growth dependences for ΔT in heating and cooling regimes and shift ΔT of the temperature of maximal permittivity were found. These dependencies were explained in terms of existence of internal biasing fields these being measured vs temperature.