Half Antiperovskites: IV. Crystallographic and Electronic Structure Investigations on A2Rh3S2 (A = In,Sn, Tl,Pb, Bi)

The crystal and electronic structures of ordered half antiperovskites A₂Rh₃S₂ = ARh_3/2S (A = In, Sn, Tl, Pb, Bi) are investigated. From powder and single crystal data superstructures, rhodium site ordering, trends in bonding and coordination are analysed with respect to the A site atom. Comparisons address isotypic and isoelectronic relations to monoclinic parkerite (Bi₂Ni₃S₂) type superconductors, the trigonal half‐metal ferromagnet Sn₂Co₃S₂, and rhodium‐containing antiperovskites. Local structure and bonding is analysed with respect to the ordered occupation of half of S₂A₄ sites (= perovskite oxygen sites) and interlinking to 2D networks [Rh₃S₂]_∞^δ– by face‐, edge‐ and corner‐sharing. The theoretical part includes DFT band structure and ELF calculations, systematic comparisons to rhodium and antiperovskites, as well as spin‐polarised calculations on Sn₂Rh₃S₂ and Pb₂Rh₃S₂.     

Zur Kenntnis der Phasen A2−2xSn5+xCl12 (A = K,In)

On the A_2?2xSn_5+xCl₁₂ (A = K, In) Phases The refinement of the structure of A_2-2xSn_5+xCl₁₂ compounds (A = K⁺, In⁺) with single crystal data is reported. They crystallize with the Th₇S₁₂ type arrangement (a = 1192(2) pm, c = 428.9(8) pm (K-compound); a = 1189.8(6) pm, c = 431.2(3) pm (In-compound)) for which we propose the space group P6 . The possibility of meroedric twinning is discussed. Due to the composition of these compounds the structure is necessarily disordered and this leads to a wide range of homogeneity which can be influenced by the size and the polarity of the A type cation.     

The Neat Ternary Solid K5−xCo1−xSn9 with Endohedral [Co@Sn9]5− Cluster Units: A Precursor for Soluble Intermetalloid [Co2@Sn17]5− Clusters

A new type of Zintl phase is presented that contains endohedrally filled clusters and that allows for the formation of intermetalloid clusters in solution by a one‐step synthesis. The intermetallic compound K_5?xCo_1?xSn₉ was obtained by the reaction of a preformed Co? Sn alloy with potassium and tin at high temperatures. The diamagnetic saltlike ternary phase contains discrete [Co@Sn₉]^5? clusters that are separated by K⁺ ions. The intermetallic compound K_5?xCo_1?xSn₉ readily and incongruently dissolves in ethylenediamine and in the presence of 4,7,13,16,21,24‐hexaoxa‐1,10‐diazabicyclo[8.8.8]hexacosane (2.2.2‐crypt), thereby leading to the formation of crystalline [K([2.2.2]crypt)]₅[Co₂Sn₁₇]. The novel polyanion [Co₂Sn₁₇]^5? contains two Co‐filled Sn₉ clusters that share one vertex. Both compounds were characterized by single‐crystal X‐ray structure analysis. The diamagnetism of K_5?xCo_1?xSn₉ and the paramagnetism of [K([2.2.2]crypt)]₅[Co₂Sn₁₇] have been confirmed by superconducting quantum interference device (SQUID) and EPR measurements, respectively. Quantum chemical calculations reveal an endohedral Co^1? atom in an [Sn₉]^4? nido cluster for [Co@Sn₉]^5? and confirm the stability of the paramagnetic [Co₂Sn₁₇]^5? unit.     

Probing the local structure of crystalline ZITO: In2−2xSnxZnxO3 (x≤0.4)

The local structure of In₂O₃ cosubstituted with Zn and Sn (In_2−2xSn_xZn_xO₃, x≤0.4 or ZITO) was determined by extended X-ray absorption fine structure (EXAFS) for x=0.1, 0.2, 0.3 and 0.4. The host bixbyite In₂O₃ structure is maintained up to the enhanced substitution limit (x=0.4). The EXAFS spectra are consistent with random substitution of In by the smaller Zn and Sn cations, a result that is consistent with the “good-to-excellent” conductivities reported for ZITO.     

Verbindungen mit Schichtstrukturen in den Systemen CuGa5S8/CuIn5S8 und AgGa5S8/AgIn5S8

Compounds with Layered Structures in the Systems CuGa₅S₈/CuIn₅S₈ and AgGa₅S₈/AgIn₅S₈ The title systems have been investigated by single crystal and powder X‐ray diffraction methods on quenched samples. In the system AgGa_xIn_5–xS₈ spinel type phases are formed up to x < 2. A compound crystallising with a hexagonal layered structure is obtained for 2 < x ≤ 3. The crystal structure of this layered phase has been solved on a single crystal of composition AgGa₃In₂S₈: space group P6₃mc, Z = 2, a = 380.80 and c = 3076.4 pm. The structure is isotypic to the Zn₂In₂S₅ (II a) type. The sample AgGa₄InS₈ crystallises in a Wurtzite like structure with a = 377.25 and c = 616.1 pm. In the system CuGa_xIn_5–xS₈ a new compound with layered structure has been detected for 1 ≤ x ≤ 2 which crystallises hexagonally with a = 380.28 and c = 3073.4 pm (x = 2). For the spinel CuIn₅S₈ an exchange of In by Ga is not detected.     

Kationenverteilung und Überstrukturordnung in ternären und quaternären Sulfidspinellen MIIMS4 – Einkristallstrukturuntersuchungen

Cation Distribution and Superstructure Ordering in Ternary and Quaternary Sulfide Spinels M^IIM₂^III S₄ – Single Crystal Structure Determinations The crystal structures of spinel type MIn₂S₄ (M ? Mn, Co, Ni), MCr_2?2xIn_2xS₄ (M ? Mn, Ni), and Cd_0.52Co_0,48Cr₂S₄ were reinvestigated by X-ray methods using single crystals grown by vapour phase transport technique. The indium sulfides possess a partially inverse distribution of the metal ions on the tetrahedral (8a) and octahedral sites (16d) of the structure. The degrees of inversion λ are 0.34 (MnIn₂S₄, a = 1072.0(1) pm, structural parameter u = 0.25726(2)), 0.84 (CoIn₂S₄, a = 1058.1(1) pm, u = 0.26921(5)) und 0.93 (NiIn₂S₄ a = 1050.5(1), u = 0.26040(3)). In the case of the chromium indium sulfide solid solutions, the degrees of inversion (and the structural parameters) increase (and decrease) linearly with increase in indium content x. ψ-scans of reflections not allowed in the space group Fd3 m do not prove simultaneous diffraction. Refinement of the structure of MnIn₂S₄ in space group F4 3m results in a partial superstructure ordering of Mn and In on the tetrahedral sites, 4a Mn_0.83In_0.17, 4c Mn_0.49In_0.51. In the case of Cd_0.52Co_0.48Cr₂S₄, superstructure ordering is like Cd_0.41Co_0.59 and Cd_0.62Co_0.38, respectively.     

Partial Sn‐atom ordering in Sm3Ga0.80–2.48Sn4.20–2.52

Trisamarium digallide tristannide crystallizes with a partially ordered Pu₃Pd₅‐type structure in space group Cmcm. In a single crystal of Sm₃Ga_1.89(4)Sn_3.11(4), the 8g position is mostly occupied by Sn atoms (93% Sn and 7% Ga), while the 4c and 8f positions are occupied by a Ga/Sn statistical mixture. The evolution of the structure as a function of the Ga content has been studied by X‐ray powder diffraction on ten Sm₃Ga_5−xSn_x samples. It is shown that the 8g position remains occupied essentially exclusively by Sn atoms within the whole homogeneity range, with x ranging from 2.52 to 4.20.     

Magnesium‐Tin Substitution in NiMg2

The binary intermetallic compound NiMg₂ (own structure type) forms a pronounced solid solution NiMg_2?xSn_x. The structure of NiMg_1.85(1)Sn_0.15(1) was refined on the basis of single crystal X‐ray data: P6₄22, a = 520.16(7), c = 1326.9(1) pm, wR2 = 0.0693, 464 F² values, and 20 variables. With increasing magnesium/tin substitution, the structure type changes. Crystals with x = 0.22 and 0.40 adopt the orthorhombic CuMg₂ type: Fddd, a = 911.0(2), b = 514.6(1), c = 1777.0(4) pm, wR2 = 0.0427, 394 F² values for NiMg_1.78(1)Sn_0.22(1), and a = 909.4(1), b = 512.9(1), c = 1775.6(1) pm, wR2 = 0.0445, 307 F² values for NiMg_1.60(1)Sn_0.40(1) with 19 variables per refinement. The nickel atoms build up almost linear chains with Ni–Ni distances between 260 and 263 pm in both modifications where each nickel atom has coordination number 10 with two nickel and eight Mg/Sn neighbors. Both magnesium sites in the NiMg₂ and CuMg₂ type structures show Mg/Sn mixing. The Ni polyhedra are condensed leading to dense layers which show a different stacking sequence in both structure types. The crystal chemical peculiarities of these intermetallics are briefly discussed.     

Synthesis and structural characterization of the type‐I clathrates K8AlxSn46–x and Rb8AlxSn46–x (x ≃ 6.4–9.7)

Exploratory studies in the systems A–Al–Sn (A = K and Rb) yielded the clathrates K₈Al_xSn_46–x (potassium aluminium stannide) and Rb₈Al_xSn_46–x (rubidium aluminium stannide), both with the cubic type‐I structure (space group Pmn, No. 223; a ? 12.0 Å). The Al:Sn ratio is close to the idealized A₈Al₈Sn₃₈ composition and it is shown that it can be varied slightly, in the range of ca ±1.5, depending on the experimental conditions. Both the (Sn,Al)₂₀ and the (Sn,Al)₂₄ cages in the structure are fully occupied by the guest alkali metal atoms, i.e. K or Rb. The A₈Al₈Sn₃₈ formula has a valence electron count that obeys the valence rules and represents an intrinsic semiconductor, while the experimentally determined compositions A₈Al_8±xSn_38?x suggest the synthesized materials to be nearly charge‐balanced Zintl phases, i.e. they are likely to behave as heavily doped p‐ or n‐type semiconductors.     

A Structural Investigation of Ga3−xIn5+xSn2O16

The structure of the recently reported transparent conductor, Ga_3−xIn_5+xSn₂O₁₆(0.3<x<1.6), was established by a combination of high-resolution electron microscopy, convergent-beam electron diffraction, and Rietveld analysis of powder diffraction data (X-ray and time-of-flight neutron methods). This “T-phase” compound has an anion-deficient fluorite-derivative structure whose space group isI4₁/a. Although there are similarities to the parent oxide structures, the T-phase lacks one of the distorted InO₆octahedra observed in In₂O₃, which may account for its inability to be donor-doped by Sn.     

Mixed crystals in the system Cu2MnGexSn1−xS4: Phase analytical investigations and inspection of tetrahedra volumes

Cu₂MnGeS₄ crystallizes orthorhombic in a wurtzite superstructure type while Cu₂MnSnS₄ crystallizes in a tetragonal sphalerite superstructure type. Lattice constants and thermal analyses of the solid solution series Cu₂MnGe_xSn_1−xS₄ are presented. A two-phase region is found from Cu₂MnGe_0.3Sn_0.7S₄ to Cu₂MnGe_0.5Sn_0.5S₄. The cell volume of the mixed crystals increases with increasing Sn content. The melting points increase smoothly with increasing Ge content to x=0.5 and then steeply for higher Ge contents. The single crystal X-ray structure analysis of Cu₂MnGe_0.55Sn_0.45S₄ is presented. The refinement converges to R=0.0270 and wR₂=0.0586, Z is 2. The volumes of the tetrahedra [MS₄] (M=Cu, Mn, Ge, Sn) are calculated. From these volumes the differences in size of the tetrahedra are derived and compared with the corresponding differences in the end members of the solid solution series. It turns out that the resulting structure type in these materials depends on the volume differences of the constituting tetrahedra [MS₄].     

Endohedrally Filled [Ni@Sn9]4− and [Co@Sn9]5− Clusters in the Neat Solids Na12Ni1−xSn17 and K13−xCo1−xSn17: Crystal Structure and 119Sn Solid‐State NMR Spectroscopy

A systematic approach to the formation of endohedrally filled atom clusters by a high‐temperature route instead of the more frequent multistep syntheses in solution is presented. Zintl phases Na₁₂Ni_1?xSn₁₇ and K_13?xCo_1?xSn₁₇, containing endohedrally filled intermetalloid clusters [Ni@Sn₉]^4? or [Co@Sn₉]^5? beside [Sn₄]^4?, are obtained from high‐temperature reactions. The arrangement of [Ni@Sn₉]^4? or [Co@Sn₉]^5? and [Sn₄]^4? clusters, which are present in the ratio 1:2, can be regarded as a hierarchical replacement variant of the hexagonal Laves phase MgZn₂ on the Mg and Zn positions, respectively. The alkali‐metal positions are considered for the first time in the hierarchical relationship, which leads to a comprehensive topological parallel and a better understanding of the composition of these compounds. The positions of the alkali‐metal atoms in the title compounds are related to the known inclusion of hydrogen atoms in the voids of Laves phases. The inclusion of Co atoms in the {Sn₉} cages correlates strongly with the number of K vacancies in K_13?xCo_1?xSn₁₇ and K_5?xCo_1?xSn₉, and consequently, all compounds correspond to diamagnetic valence compounds. Owing to their diamagnetism, K_13?xCo_1?xSn₁₇, and K_5?xCo_1?xSn₉, as well as the d‐block metal free binary compounds K₁₂Sn₁₇ and K₄Sn₉, were characterized for the first time by ¹¹⁹Sn solid‐state NMR spectroscopy.     

Neue Zinn‐reiche Stannide der Systeme AII‐Al‐Sn (AII = Ca,Sr, Ba)

New Tin‐rich Stannides of the Systems A^II‐Al‐Sn (A^II = Ca, Sr, Ba) Four new tin‐rich intermetallics of the ternary systems Ca/Sr/Ba‐Al‐Sn were synthesized from stoichiometric amounts of the elements at maximum temperatures of 1200 °C. Their crystal structures, representing two new types, have been determined using single crystal x‐ray diffraction. Close to the 1:1 composition, the structures of the two isotypic compounds A₁₈[Al₄(Al/Sn)₂Sn₄][Sn₄][Sn]₂ (overall composition A₉M₈; A = Sr/Ba, tetragonal, space group P4/mbm, a = 1325.9(1)/1378.6(1), c = 1272.8(2)/1305.4(1) pm, Z = 4, R1 = 0.0430/0.0293) contain three different anionic Sn/Al building units: Isolated Sn atoms (motif I) coordinated by the alkaline earth cations only (comparable to Ca₂Sn), linear Sn chains (II), which are comparable to the anions in trielides related to the W₅Si₃ structure type and finally octahedral clusters [Al₄M₂Sn₄] (III), composed of four Al atoms forming the center plane, two statistically occupied Al/Sn atoms at the apexes and four exohedral Sn attached to Al. Close to the AM₂ composition, two isotypic tin‐rich intermetallics A₉[Al₃Sn₂][(Sn/Al)₄]Sn₆ (overall composition A₉M₁₅; A = Ca/Sr; space group C2/m, a = 2175.2(1)/2231.0(2), b = 1210.8(1)/1247.0(1), c = 1007.4(1)/1042.0(2) pm, β = 103.38(1)/103.42(1)°, Z = 2, R1 = 0.0541/0.0378) are formed. Their structure is best described as a complex three‐dimensional network, that can be considered to consist of the building units of the binary border phases too, i.e. linear zig‐zag chains of Sn (motif I) like in CaSn, ladders of four‐bonded Sn/Al atoms (II) like in SrAl₂ and trigonal‐bipyramidal clusters [Al₃Sn₂] (III) also present in Ba₃Al₅. Despite the complex structures, some statistically occupied Al/Sn positions and the small disorder of one building unit, the bonding in both structure types can be interpreted using the Zintl concept and Wade's electron counting rules when taking partial Sn‐Sn bonds into account.     

Substitution Effects in Zintl Phases: Synthesis and Crystal Structure of the Novel Phases Ae3Sn4−xBi1+x (x ≤ 1; Ae = Sr,Ba) Containing Shubnikov‐Type Nets $^{2}_{\infty}\rm [Sn_{4-x}Bi_{x}]$

The compounds Ae₃Sn_4?xBi_1+x (Ae = Sr, Ba) with x < 1 have been synthesized by solid‐state reactions in welded Nb tubes at high temperature. Their structures were determined by single crystal X‐ray diffraction studies to be tetragonal; space group I4/mcm (No. 140); Z = 4, with a = 8.968(1) Å, c = 12.859(1) Å for Sr₃Sn_3.36Bi_1.64(3) ( 1 ) and a = 9.248(2), c = 13.323(3) Å for Ba₃Sn_3.16Bi_1.84(3) ( 2 ). The structure consists of two interpenetrating networks formed by a 3D Ae_6/2Bi substructure (anti‐ReO₃ type) forming the host, and layers of interconnected four‐member units [Sn_4?xBi_x] with “butterfly”‐like shape as the guest. According to the Zintl‐Klemm concept, the compounds are slightly electron deficient and will be charge balanced for x = 1. The electronic structures of Ae₃Sn_4?xBi_1+x calculated by the TB‐LMTO‐ASA method indicate that the compounds correspond to ideal semiconducting Zintl phases with a narrow band gap for x = 1 (zero‐gap semiconductor). The origin of the slight deviation from the optimal electron count for a valance compound is discussed.     

Zur Kenntnis des quaternären Systems Zn?In?S?Se Der Schnitt ZnIn2S4?Znln2Se4?In2S3?In2Se3

The Quaternary System ZnIn₂S₄? ZnIn₂Se₄? In₂Se₃? In₂S₃ The title system has been investigated on the indium rich side (ratio In/Zn ≥ 2) on samples quenched from 800°C to room temperature using x-ray methods. In this section 7 different phases could be identified the phase borders of which are given. ZnIn₂S₄-type and thiogallate type mixed crystals only show a small region of homogeneity while the monophase region of spinel type mixed crystals in the indiumsulfide rich part of the phase diagram has a larger extension. There is a new trigonal compound ZnIn₂S₂Se₂ (a_hex = 3.937, c_hex = 31.97 Å) with a large region of homogeneity. In the indiumselenide rich part there are two new phases: (i) Zn_0.4In₂Se_3.4 with unknown structure and (ii) a ternary phase of unknown structure in the system In₂S_3?xSe_x for 2.1 ≤ x ≤ 2.7.     

The series RE5Li2Sn7 (RE = Ce,Pr, Nd,Sm) revisited: crystal structure of RE5Li2−xSn7+x [0 ≤x≤ 0.03 (1)]

The series of RE₅Li₂Sn₇ (RE = Ce–Sm) compounds were synthesized by high‐temperature reactions and structurally characterized by single‐crystal X‐ray diffraction. The compounds are pentacerium dilithium heptastannide, Ce₅Li_1.97Sn_7.03, pentapreseodymium dilithium heptastannide, Pr₅Li_1.98Sn_7.02, pentaneodymium dilithium heptastannide, Nd₅Li_1.99Sn_7.01, and pentasamarium dilithium heptastannide, Sm₅Li₂Sn₇. All five compounds crystallize in the chiral orthorhombic space group P2₁2₁2₁ (No. 19), which is relatively uncommon among intermetallic phases. The structure belongs to the Ce₅Li₂Sn₇ structure type (Pearson symbol oP56), with 14 unique atoms in the asymmetric unit. Minor compositional variations exist, due to the mixed occupancy of Li and Sn atoms at one of the Li sites. The small occupational disorder is most evident for RE₅Li_2−xSn_7+x (RE = Ce, Pr; x≃ 0.03), while the structure of Nd₅Li₂Sn₇ and Sm₅Li₂Sn₇ show no apparent disorder.     

Biomimetic Synthesis of Metal Ion‐Doped Hierarchical Crystals Using a Gel Matrix: Formation of Cobalt‐Doped LiMn2O4 with Improved Electrochemical Properties through a Cobalt‐Doped MnCO3 Precursor

We have synthesized spinel type cobalt‐doped LiMn₂O₄ (LiMn_2?yCo_yO₄, 0≤y≤0.367), a cathode material for a lithium‐ion battery, with hierarchical sponge structures via the cobalt‐doped MnCO₃ (Mn_1‐xCo_xCO₃, 0≤x≤0.204) formed in an agar gel matrix. Biomimetic crystal growth in the gel matrix facilitates the generation of both an homogeneous solid solution and the hierarchical structures under ambient condition. The controlled composition and the hierarchical structure of the cobalt‐doped MnCO₃ precursor played an important role in the formation of the cobalt‐doped LiMn₂O₄. The charge–discharge reversible stability of the resultant LiMn_1.947Co_0.053O₄ was improved to ca. 12 % loss of the discharge capacity after 100 cycles, while pure LiMn₂O₄ showed 24 % loss of the discharge capacity after 100 cycles. The parallel control of the hierarchical structure and the composition in the precursor material through a biomimetic approach, promises the development of functional materials under mild conditions.     

Ternary Rhodium Borides A3Rh5B2 (A = Mg,Sc) and Quaternary Derivatives A2MRh5B2. Preparation,Crystal Structure (M = Main Group and 3 d Elements), and Magnetism (M = Mn,Fe)

The new ternary rhodium borides Mg₃Rh₅B₂ and Sc₃Rh₅B₂ (P4/mbm, Z = 2; a = 943.4(1) pm, c = 292.2(1) pm and a = 943.2(1) pm, c = 308.7(1) pm, respectively) crystallize with the Ti₃Co₅B₂ type structure. Mg and Sc may in part be substituted by a variety of elements M. For M = Si and Fe, homogeneity ranges were found according to A_3–xM_xRh₅B₂ with 0 ≤ x ≤ 1.0 for A = Sc and with x up to 1.5 for A = Mg. Quaternary compounds with x = 1 (A₂MRh₅B₂: A/M in short) were prepared with M = Be, Al, Si, P, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Sn (Co, Ni only with A = Mg; Sn only with A = Sc; P, As with deficiencies). Single crystal X‐ray investigations show an ordered substitutional variant of the Ti₃Co₅B₂ type in which the M atoms are arranged in chains along [001] with intrachain and interchain M–M distances of about 300 pm and 660 pm, respectively. Measuring the magnetisation (1.7 K–800 K) of the phases Mg/Mn, Sc/Mn, Mg/Fe, and Sc/Fe reveals antiferromagnetic interactions in the first and dominating ferromagnetic intrachain interactions in the remaining ones. Interchain interactions of antiferromagnetic nature are evident in Sc/Mn and Mg/Fe leading to metamagnetism below T_N = 130 K, while Sc/Fe behaves ferromagnetically below T_C = 450 K. The overall trend towards stronger ferromagnetic interactions with increasing valence electron concentration is obvious.     

Ru掺杂SnO2半导体固溶体的电子结构研究

运用基于密度泛函理论的第一性原理方法,建立了SnO₂以及不同比例Ru掺杂的SnO₂超胞模型,在对其进行几何优化后计算了Sn_1-xRu_xO₂(x=0,1/16,1/12,1/8,1/6,1/4,1/2)半导体的电子结构,并讨论了其晶格参数、电荷密度、能带结构和态密度(包括分态密度)等性质。结果表明,掺杂后,晶格参数随掺杂量的增加线性减小,与实验值的偏差在4%以内;掺杂后,在费米能级处可以提供更多的填充电子,使得电子跃迁至导带更容易,固溶体的导电性增强。为Sn_1-xRu_xO₂固溶体电极材料的发展和应用提供了理论基础。