离子敏感场效应晶体管及其应用

离子敏感场效应晶体管具有若干不同于寻常传感器的特点：超小型、全固态、集成化和自身阻抗变换等。它是一种很有发展前途的传感器。本文了讨论了离子敏感场效应晶体管的分类、结构和性能；评述了１９８９年以来其在临床医学和流动注射分析等方面的应用。引参考文献６７篇。     

Organic semiconductors for solution-processable field-effect transistors (OFETs)

The cost-effective production of flexible electronic components will profit considerably from the development of solution-processable, organic semiconductor materials. Particular attention is focused on soluble semiconductors for organic field-effect transistors (OFETs). The hitherto differentiation between "small molecules" and polymeric materials no longer plays a role, rather more the ability to process materials from solution to homogeneous semiconducting films with optimal electronic properties (high charge-carrier mobility, low threshold voltage, high on/off ratio) is pivotal. Key classes of materials for this purpose are soluble oligoacenes, soluble oligo- and polythiophenes and their respective copolymers, and oligo- and polytriarylamines. In this context, micro- or nanocrystalline materials have the general advantage of somewhat higher charge-carrier mobilities, which, however, could be offset in the case of amorphous, glassy materials by simpler and more reproducible processing.     

Potassium Ion-Selective Field-Effect Transistor (ISFET) Sensors: Studies on Gate Dimensions and Ion-Implantation Levels

Abstract

Silicon nitride membrane ISFET sensor chips have been produced with varying gate dimensions. A series of width/length (W/L) aspect ratios have been examined, combined with three levels of boron ion-implant. The level of ion-implantation affects the threshold voltage; this is important as a low threshold voltage allows the use of low noise operating conditions. Gate dimensions are also important factors for they determine the level of drain current for a given gate and drain voltages. A novel design feature, aimed at achieving wide gates, is the use of folded gates as well as having a straight structure. The evaluation of devices with gates covered with poly(vinyl chloride) (PVC)-valinomycin-dioctyl adipate was based on their response to potassium chloride standards when it was shown that there may be a maximum width of gate above which there is no improvement of response. Also, the effect of folding the gate structure is discussed and shown to be tenable, thus permitting greater miniaturisation.     

Nitrate ion-sensitive field effect transistor based on bis(bathocuproin)-copper(I) nitrate dissolved in solid solvents

Nitrate-selective ion-sensitive field effect transistors (ISFETs) were prepared by dip-coating the silica gate insulator surface with an ion exchanger based on bis(bathocuproin)-copper(I) nitrate in a molten mixture of docosan 1-ol and Triphenylphosphate. This sensor showed a linear response from 10⁻¹ mol dm⁻³ to at least 10⁻⁵ mol dm⁻³ and maintained its response characteristics for as long as 5 weeks. The selectivity sequence for common anions such as Cl0−₄ and Cl− followed the conventional Hofmeister series. This sensor was applied to rain water analysis.     

Recent advances on the development of graphene-based field-effect transistors,electrochemical biosensors and electrochemiluminescence biosensors

Graphene, a honeycomb lattice of carbon material with single-atom-layer structure, demonstrates extraordinary mechanical, thermal, chemical and electronic properties. Thus, it has sparked tremendous interests in various fields, such as energy storage and conversion devices, field-effect transistors (FET), chemical sensors and biosensors. In this review, we will first focus on the synthesis method of graphene and the fabrication strategy of graphene-based materials. Subsequently, the construction of graphene-based biosensors are introduced, in which three kinds of biosensors are discussed in details, including the FET, electrochemical biosensors and electrochemiluminescence (ECL) biosensors. The performances of the state-of-the-art biosensors on the detection of biomolecules are also displayed. Finally, we also highlight some critical challenges remain to be solved and the development in this field for further research.     

药物敏感场效应晶体管测定阿托品的研究

报道了一种测定阿托品的新方法。用四苯硼钠为电活性物质 ,将离子敏感场效应晶体管与药物敏感膜相结合 ,制成药物敏感场效应晶体管传感器。该传感器测定阿托品的线性范围为 1 .0× 1 0 - 2～ 8.5× 1 0 - 6 mol/L。用该传感器分析阿托品针剂 ,结果与药典法吻合     

硅钨酸-丁氯喘ISFET的研制与应用

以硅钨酸为活性物质 ,邻苯二甲酸二辛酯为增塑剂制成的 5%聚氯乙烯四氢呋喃溶液 ,涂在离子敏感场效应晶体管 ( ISFET)的栅极上 ,形成对药物敏感的场效应晶体管 ( Drug FET)。由该 Drug FET制成的化学传感器对盐酸丁氯喘的线性响应范围为 1 .0 0× 1 0 - 5～ 1 .50× 1 0 - 1mo L/L,斜率为 60 m V/Δpc,适宜的 p H范围为 4.5～8.2 ,检测下限为 8.50× 1 0 - 6 mo L/L。用该传感器分析了丁氯喘片剂的含量 ,和分光光度法测定的结果相一致     

Cyanation: providing a three-in-one advantage for the design of n-type organic field-effect transistors

The theoretical work presented here demonstrates that, when substitution takes place at appropriate positions, cyanation could be a useful tool for reducing the internal reorganization energy of molecules. A molecular-orbital-based explanation is given for this fundamentally important phenomenon. Some of the cyanated pentacene derivatives (nCN-PENT-n) not only have internal reorganization energies for electron transfer (lambda(-)) smaller than that of pentacene, but the lambda(-) values are even of the same magnitude as the internal reorganization energy for hole transfer (lambda(+)) of pentacene, a small value that few organic compounds have surpassed. In addition, cyanation raises the electron affinity of the parent compound and may afford good electronic couplings between neighboring molecules, because of its ability in promoting pi-stacking. For the design of high performance n-Type Organic field-effect transistors, high electron affinities, large intermolecular electronic couplings, and small reorganization energies are necessary. Cyanation may help in all three aspects. Two cyanated trialkylsilylethynyl pentacene derivatives with known pi-stacking structures are predicted to provide reasonably small internal reorganization energies, large electronic couplings, and high electron affinities. They have the potential to outperform N-fluoroalkylated dicyanoperylene-3,4:9,10-bis(dicarboximides) (PDI-FCN(2)) in terms of electron mobility.     

Air-stable n-type organic field-effect transistors based on solution-processable, electronegative oligomers containing dicyanomethylene-substituted cyclopenta[b]thiophene

Solution-processable, electronegative, π-conjugated systems containing dicyanomethylene-substituted cyclopenta[b]thiophene were synthesized as potential active materials for air-stable n-type organic field-effect transistors (OFETs). Electrochemical measurements revealed that these compounds exhibited electrochemical stability and that the lowest unoccupied molecular orbital (LUMO) had an energy level less than -4.0 eV. Flash-photolysis time-resolved microwave conductivity (FP-TRMC) measurements were performed, and the value of intradomain electron mobility was determined to be as high as 0.1 cm(2) V(-1) s(-1) . The OFETs were fabricated by spin-coating thin films of the compounds as an active layer. The electron mobility of the OFETs was 3.5×10(-3) cm(2) V(-1) s(-1) in vacuum. Furthermore, electron mobility of the same order of magnitude and stable characteristics were obtained under air-exposed conditions. X-ray diffraction measurements of the spin-coated thin films revealed the difference of molecular arrangements depending on the inner conjugated units. Atomic force microscopy measurements of crystalline-structured films exhibited the formation of grains. The accomplishment of air-stability was attributed to the combined effect of the low-lying LUMO energy level and the molecular arrangements in the solid state, avoiding both the quenching of electron carriers and the intrusion of oxygen and/or moisture.     

硅纳米线和聚3-十二烷基噻吩混合薄膜在场效应晶体管中的应用研究

为了提高聚3-十二烷基噻吩的场效应迁移率, 将硅纳米线混入聚3-十二烷基噻吩的溶液中制成薄膜. 退火后的聚3-十二烷基噻吩能够自组装成有序的微晶结构, 有利于电子传输. 聚3-十二烷基噻吩薄膜在场效应晶体管中能够获得0.015 cm²·V^-1·s^-1的迁移率, 而混合薄膜能够获得高达0.68 cm²·V^-1·s^-1的迁移率. 这是因为硅纳米线优异的电子传输性能使得电子通过硅纳米线就像通过快速通道一样, 从而能够缩短电子在场效应晶体管中的传输时间, 提高传输速度. 此外, 使用离子胶作为介电层也能够提升场效应晶体管的性能, 混合薄膜能够获得高达6.2 cm²·V^-1·s^-1的迁移率.     

Study on channel depletion in metal‐oxide‐semiconductor field effect transistor using top‐view imaging through scanning capacitance microscopy

Carrier profiles within the near‐surface channel region of n‐type metal‐oxide‐semiconductor field‐effect transistors (n‐MOSFETs) have been examined using scanning capacitance microscopy (SCM). After the removal of a poly‐Si gate electrode, we were able to assess the qualitative local carrier concentration within specified regions of an n‐MOSFET using static capacitance (dC/dZ) measurement with its bias dependence (dC/dZ–V spectra). We found that the dC/dZ‐signal at the center of the channel region lowers as the gate length is reduced. This result is attributed to the carrier depletion within the channel, which is consistent with the threshold voltage (V_th) characteristics of the device properties. Copyright © 2008 John Wiley & Sons, Ltd.     

Bis(5,7‐dimethyl‐8‐hydroxyquinolinato)platinum(II) Complex for Efficient Organic Heterojunction Solar Cells

Organic photovoltaic (OPV) cells using metal(II) (Pt, Pd, Cu, and Ni) chelates of 8‐hydroxyquinoline (Hq) or 5,7‐dimethyl‐8‐hydroxy‐quinoline (HMe₂q) as an electron donor were fabricated by vacuum deposition. The bis(5,7‐dimethyl‐8‐hydroxyquinolinato)platinum(II) [Pt(Me₂q)₂]‐based OPVs showed the best performance with an open voltage (V_OC) of 0.42 V, a short circuit current density (J_SC) of 14.8 mA cm^?2, and a maximum power conversion efficiency (η_P) of 2.4 %. The X‐ray single‐crystal structures together with the grazing incidence X‐ray diffraction (GIXRD) data of thin film samples reveal that the peripheral methyl substituent(s) and platinum(II) ion are essential for the high degree of film crystallinity resulting in improved performance of the as‐fabricated field‐effect transistors (FETs) and OPV cells.     

Synthesis and characterisation of liquid crystal molecules based on thieno [3,2-b] thiophene and their application in organic field-effect transistors

A thieno [3,2-b] thiophene-based planar liquid crystal molecule, C₁₂-PTTT, which possesses the characteristics of an organic field-effect transistor (OFET), was synthesised and its mesomorphic properties were studied by polarising optical microscopy and differential scanning calorimetry. A wide temperature range for a highly oriented smectic phase was observed. OFET devices made under various conditions, such as self-assembled monolayer treatment and alignment treatment, and with micro-channel structures, were fabricated to measure the electrical properties. Among different OFET device conditions, the best electric carrier mobility for C₁₂-PTTT was 0.038 cm²?V^?1?s^?1.     

Synthesis,characterization, and field‐effect transistor performance of poly[2,6‐bis(3‐tridecanoxythiophen‐2‐yl)benzo[1,2‐b;4,5‐b′]dithiophene]

A new copolymer of benzo[1,2‐b:4,5‐b′]dithiophene and 3,3′‐bis(tridecanoxy)‐5,5′‐bithiophene was synthesized through Stille copolymerization. The bis‐(3‐alkoxythiophene) monomer was synthesized through a silver fluoride mediated, palladium‐catalyzed cross‐coupling, in which bromide functional groups were preserved instead of consumed. The copolymer has been characterized and applied in field‐effect transistors, giving a hole mobility of 2 × 10^?3 cm²/Vs and an on/off ratio >10⁶, with negligible hysteresis, on standard silicon substrates. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 1973–1978, 2010     

Interactions of DNA with graphene and sensing applications of graphene field-effect transistor devices: A review

Graphene field-effect transistors (GFET) have emerged as powerful detection platforms enabled by the advent of chemical vapor deposition (CVD) production of the unique atomically thin 2D material on a large scale. DNA aptamers, short target-specific oligonucleotides, are excellent sensor moieties for GFETs due to their strong affinity to graphene, relatively short chain-length, selectivity, and a high degree of analyte variability. However, the interaction between DNA and graphene is not fully understood, leading to questions about the structure of surface-bound DNA, including the morphology of DNA nanostructures and the nature of the electronic response seen from analyte binding. This review critically evaluates recent insights into the nature of the DNA graphene interaction and its affect on sensor viability for DNA, small molecules, and proteins with respect to previously established sensing methods. We first discuss the sorption of DNA to graphene to introduce the interactions and forces acting in DNA based GFET devices and how these forces can potentially affect the performance of increasingly popular DNA aptamers and even future DNA nanostructures as sensor substrates. Next, we discuss the novel use of GFETs to detect DNA and the underlying electronic phenomena that are typically used as benchmarks for characterizing the analyte response of these devices. Finally, we address the use of DNA aptamers to increase the selectivity of GFET sensors for small molecules and proteins and compare them with other, state of the art, detection methods.     

Solvent Vapor‐Induced Nanowire Formation in Poly(3‐hexylthiophene) Thin Films

Summary: Nanowire lengths and length‐to‐width aspect ratios in regioregular poly(3‐hexylthiophene) (P3HT) were simply controlled through changes in the solvent vapor pressure during solidification. It is demonstrated that the nanowires grew by rod‐to‐rod association, in which the molecular long axis of the P3HT chains appeared to be well‐oriented parallel to the silicon substrate (Si/SiO_x). The formation of the nanowires took place by one dimensional self‐assembly, governed by π‐π stacking of the P3HT units.

TEM high contrast images showing P3HT nanowires fabricated by spin‐coating under a solvent vapor pressure.     

One-dimensional bromo-bridged Ni III complexes [Ni(S,S-bn)2Br]Br2 (S,S-bn=2S,3S-diaminobutane): synthesis, physical properties, and electrostatic carrier doping

A new bromo-bridged Ni III compound has been synthesized. This compound displayed a strong antiferromagnetic interaction between spins located on Ni III species (J=(2350+/-500) K) that result from the strong covalency of the Ni--Br bond and the spin-Peierls transition below 150 K. This was shown by the results of magnetic susceptibility and 81Br nuclear quadrupole resonance spectroscopy analysis. We succeeded in the electrostatic carrier doping of a single crystalline sample by using a field-effect transistor device. This compound also showed n-type semiconductor behavior, which can be reasonably rationalized by the existence of a small amount of Ni II impurities.