Co掺杂ZnO薄膜的局域结构和电荷转移特性研究

采用磁束缚电感耦合等离子体溅射沉积法在不同的氧气分压下制备了Zn_0.95Co_0.05O和Zn_0.94Co_0.05Al_0.01O薄膜.利用X射线吸收精细结构技术对薄膜O-K,Co-K和Co-L边进行了局域结构研究,结果表明：Co²⁺取代了四配位晶体场中的Zn²⁺而未改变ZnO的六方纤锌矿结构,高真空条件下制备的薄膜 关键词： Co掺杂ZnO 稀磁半导体 X射线吸收精细结构 共振非弹性X射线散射     

制备工艺对Zn1-xMgxO薄膜结构及光学性能的影响

采用脉冲激光沉积（PLD）方法在单晶Si（100）衬底上沿c轴方向生长单晶Zn_1-xMg_xO薄膜,通过X射线衍射（XRD）、原子力显微镜（AFM）、扫描电镜（SEM）和荧光光谱（PL）研究了膜厚、Mg含量、退火温度及氧气氛等制备工艺对Zn_1-xMg_xO薄膜的结构、形貌和光学性质的影响.实验结果表明,Mg含量x≤0.15时, Zn_{关键词： 1-x}Mg_xO薄膜')" href="#">Zn_1-xMg_xO薄膜 制备工艺 结构 光学性质     

Zn1-xCoxO稀磁半导体薄膜的结构及其磁性研究

利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn_1-xCo_xO (x＝0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn₁-xCo_xO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn_1-xCo_xO 稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn_1-xCo_xO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn_1-xCo_xO产生室温铁磁性的主要原因. 关键词： 1-xCo_xO稀磁半导体')" href="#">Zn_1-xCo_xO稀磁半导体 X射线吸收精细结构谱 脉冲激光气相沉积法     

蓝宝石基片的处理方法对ZnO薄膜生长行为的影响

采用反应射频磁控溅射方法,在经过不同方法处理的蓝宝石基片上,在同一条件下沉积了ZnO薄膜.利用原子力显微镜、X射线衍射、反射式高能电子衍射等分析技术,对基片和薄膜的结构、表面形貌进行了系统表征.研究结果显示,不同退火条件下的蓝宝石基片表面结构之间没有本质的差异,均为α-Al₂O₃ (001)晶面,但基片表面形貌的变化较大.在不同方法处理的蓝宝石基片上生长的ZnO薄膜均具有高c轴取向的织构特征,但薄膜的表面形貌差异较大.基片经真空退火处 关键词： ZnO薄膜 反应磁控溅射 基片处理 形貌分析     

氧空位对钴掺杂氧化锌半导体磁性能的影响

从实验和理论上阐述了氧空位对Co掺杂ZnO半导体磁性能的影响.采用磁控溅射法在不同的氧分压下制备了Zn_095Co_005O薄膜,研究了氧分压对薄膜磁性能的影响.实验结果表明,高真空条件下制备的Zn_095Co_005O薄膜具有室温铁磁性,提高氧分压后制备的薄膜铁磁性逐渐消失.第一性原理计算表明,在Co掺杂ZnO体系中引入氧空位有利于降低铁磁态的能量,铁磁态的稳定性与氧空位和Co之间的距离密切相关. 关键词： Co掺杂ZnO 稀磁半导体 第一性原理计算 氧空位缺陷     

采用PVA方法制备ZnO基发光稀磁半导体

不同的制备工艺对ZnO薄膜的微结构和性能有很大的影响,为了得到成本较低,样品具有较好特性的实验方法,对于制备手段进行了探索。使用PVA溶胶-凝胶法制备了Zn_0.88Co_0.12O薄膜,研究了不同退火工艺对其微结构的影响。对于Zn_0.88Co_0.12O样品的微结构和室温下的铁磁性和发光特性,具体比较分析了产生原因。对比了Co掺杂和复合Co、Fe掺杂Zn_0.88(Co_0.5Fe_0.5)_0.12O样品的微结构,采用振动样品磁强计(VSM)测量了样品的磁特性,发现单一掺杂的薄膜具有更好的晶体质量和更强的磁性。     

退火对Mn和N共掺杂的Zn0.88Mn0.12O:N薄膜特性的影响

以NH₃为掺N源,采用电子束反应蒸发技术生长了Mn和N共掺杂的Zn_1-xMn_xO:N薄膜,生长温度为300℃,然后在O₂气氛中400℃退火0.5 h.X射线衍射测量表明,Zn_0.88Mn_0.12O(Mn掺杂)薄膜或Zn_0.88Mn_0.12O:N(Mn和N共掺杂)薄膜仍具有单一晶相纤锌矿结构,未检测到杂质相 关键词： ZnO薄膜 Mn和N共掺杂 电学特性 磁特性     

氧化处理的蓝宝石基片上沉积的ZnO/MgO多量子阱的结构及光学性质研究

采用射频反应磁控溅射的方法,在经过氧化处理的Al₂O₃（0001）基片上制备了具有良好调制结构的ZnO/MgO多层膜量子阱.利用X射线反射率测量、X射线衍射分析、电子探针显微分析、原子力显微镜、透射光谱以及光致发光光谱等表征技术,研究了ZnO/MgO多量子阱的结构、表面形貌和光致发光等特性.XRD以及扫描的结果表明多层膜样品具有高c轴择优取向并且与蓝宝石基片有良好的外延关系.通过X射线反射率测量的结果得到多量子阱的调制周期,结合电子 关键词： ZnO/MgO 多量子阱 反应磁控溅射 变温光谱     

Zn$lt;sub$gt;1-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;Mg$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;O薄膜的光致发光特性研究

采用脉冲激光沉积方法在单晶Si（100）衬底上制备出c轴取向的Zn_1-xMg_xO单晶薄膜,通过荧光光谱仪研究了薄膜的光致发光特性.实验结果表明,Mg含量增加,Zn_1-xMg_xO单晶薄膜的紫外发光峰蓝移,发光峰强度减弱,缺陷发光强度增强.同时发现,由于Mg的掺杂,引入了一些束缚能较大的局域束缚态.对于氧气氛下制备的样品,实验发现紫外峰和绿光带发光峰同时增强,但是R值减小,紫外峰红移.对绿光发光机理研究发现,绿光发光带主要与锌空位、氧间隙（O_i）或锌位氧（O_Zn）等缺陷有关,它是由多个缺陷发光峰组成,各缺陷发光峰强度相对变化导致了绿光发光带的整体移动. 关键词： 1-xMg_xO薄膜')" href="#">Zn_1-xMg_xO薄膜 光致发光 脉冲激光沉积     

Si-Al2O3复合薄膜的室温铁磁性

在Si-Al₂O₃复合薄膜中观察到室温铁磁性.Si的体积百分比为15 %的Si-Al₂O₃复合薄膜的磁性最强.Si的含量影响样品的磁有序,在样品中观察到了明显的磁畴.在不同气氛下,对样品进行快速热退火.退火样品的磁性测试结果的差别表明氧空位不是样品铁磁性的主要来源.我们认为铁磁性来源于Si与Al₂O₃基质界面之间的缺陷的磁耦合.改变Si的含量可以改变缺陷密度,从而控制铁磁耦合强度. 关键词： 2O₃薄膜')" href="#">Al₂O₃薄膜 室温铁磁性 掺杂 交换相互作用     

Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy

C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphire, the films grown on c-plane sapphire are found to be bi-crystalline; some domains have a 30o rotation to reduce the large mismatch between the film and the substrate. The presence of these rotation domains in the bi-crystalline ZnO thin film causes much more carrier scatterings at the boundaries, leading to much lower mobility and smaller mean free path of the mobile carriers than those of the single crystalline one. In addition, the complex impedance spectra are also studied to identify relaxation mechanisms due to the domains and/or domain boundaries in both the single crystalline and bi-crystalline ZnO thin films.     

Ga2O3/GaN/蓝宝石模板上β-Ga2O3薄膜的生长

为获得高质量的β-Ga2O3薄膜,将c面蓝宝石上生长的GaN薄膜进行高温氧化制成了Ga2O3/GaN/蓝宝石模板,进而在模板上利用金属有机化学气相沉积(MOCVD)工艺进行了β-Ga2O3薄膜的同质外延。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对样品的晶体结构、表面形貌等性质进行测试与分析。结果表明,该方法获得的β-Ga2O3薄膜晶体质量受GaN薄膜氧化效果与MOCVD工艺条件等因素影响较大。通过优化实验条件,得到了质量较高的β-Ga2O3薄膜。与蓝宝石上或GaN薄膜上异质外延得到的β-Ga2O3薄膜相比,薄膜的晶体质量明显提高。通过对比不同样品的晶体质量、表面形貌和制备过程,发现该方法成功地将β-Ga2O3薄膜在蓝宝石衬底或GaN/蓝宝石模板上异质外延转化为了Ga2O3/GaN/蓝宝石模板上的同质外延,有效地减小了β-Ga2O3薄膜和蓝宝石、GaN之间较大的晶格失配和热失配,有利于提高β-Ga2O3薄膜的晶体质量。     

Comparative studies on Zn0.95Co0.05O thin films on C- and R-sapphire substrates

Zn0.95Co0.05 O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method.The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane (0001) or R-plane (11 ˉ 20) sapphire substrate.Based on the results of high-resolution transmission electron microscopy and x-ray diffraction,C-plane films show larger lattice mismatch.The films exhibit magnetic and semiconductor properties at room temperature.The coercivity of the film is about 8000 A/m at room temperature.They are soft magnetic materials with small remanent squareness S for both crystal orientations.There is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis) for the wurtzite structure.     

Low-temperature MOVPE growth of ZnO thin films by using a buffer layer

ZnO thin films have been grown on a-plane (1,1,−2,0) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at low substrate temperature of 350 °C. It is showed that the crystal and electrical quality of the thin films was improved by using a ZnO buffer layer. The photoluminescence (PL) measurements indicate that the ZnO thin films grown at such a low substrate temperature have a strong UV emission.     

Optical properties and structural characteristics of ZnO thin films grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

We investigated structural and optical properties of ZnO thin films grown on (112?0) a-plane sapphire substrates using plasma-assisted molecular beam epitaxy. Negligible biaxial stress in ZnO thin films is due to the use of (112?0) a-plane sapphire substrates and slow substrate cooling. The 14 K photoluminescence spectrum shows a blueshift of energy positions compared with ZnO single crystal. A donor with binding energy of 43 meV and an acceptor with binding energy of ～170 meV are identified by well-resolved photoluminescence spectra. A characteristic emission band at 3.320 eV (so-called A-line) is studied. Based on analysis from photoluminescence spectra, the origin of the A-line, it seems, is more likely an (e, A°) transition, in which defect behaves as an acceptor. The room-temperature photoluminescence is dominated by the FX at 3.307 eV, which is an indication of strongly reduced defect density in ZnO thin films.     

Zn1-xMgxO薄膜p型导电和光学性能

采用超声喷雾热分解(Ultrasonic Spray Pyrolysis,USP)方法,以醋酸锌、醋酸镁、醋酸铵、氯化铝的混合水溶液为前驱溶液,在单晶Si(100)衬底上制备了ZnO,Zn_0.81Mg_0.19O,N-Al共掺杂ZnO和N-Al共掺杂Zn_0.81Mg_0.19O薄膜。以X射线衍射(XRD)、场发射-扫描电镜(FE-SEM)、霍尔效应(Hall-effect)、光致发光(Photoluminescence,PL)谱等手段研究了薄膜的晶体结构、表面形貌、电学性能、光学性能和带隙变化。电学测试结果表明,未掺杂ZnO及Zn_0.81Mg_0.19O薄膜为n型导电;而N-Al共掺杂ZnO和N-Al共掺杂Zn_0.81Mg_0.19O薄膜呈p型导电。Zn_0.81Mg_0.19O和N-Al共掺杂Zn_0.81Mg_0.19O(p型)薄膜在维持ZnO纤锌矿结构的前提下,光学带隙随Mg掺杂量增加而增大。初步结果显示,优化工艺参数下通过Mg掺杂制备光学带隙可调的p型Zn_0.81Mg_0.19O薄膜,对于试制Zn_1-xMg_xO基同质p-n结、短波长(紫外、深紫外)器件等方面有重要意义。     

Layer by layer growth of ZnO on (0001) sapphire substrates by radical-source molecular beam epitaxy

Layer by layer growth of ZnO epilayers on (0001) Al₂O₃ substrates is achieved by radical-source molecular beam epitaxy. A thin MgO buffer, followed by a low-temperature ZnO buffer was used in order to accommodate the lattice mismatch between ZnO and sapphire. Reflection high-energy electron diffraction intensity was employed for the optimization of the ZnO growth. The surface morphology of the samples was studied with atomic force microscopy. Investigation of the nature of the influence of the MgO buffer layer on the formation of ZnO on sapphire substrate was carried out using Transmission Electron Microscopy. For the first time it was shown that a thin spinel (magnesium aluminum oxide) layer is formed on the interface of the sapphire substrate and MgO buffer layer leading to the crystalline quality improvement of the ZnO main layer. X-Ray diffractometry measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on sapphire. The crystalline quality of the ZnO layers is even better than that of our previously reported layers grown employing hydrogen peroxide as an oxidant. The full width at half maximum of the XRD (0002) rocking curve is as low as 25 arc s. The influence of growth parameters (Zn/O flux ratio, temperature, etc.) on the structural properties as well as on the surface morphology of the zinc oxide layers on sapphire is investigated and discussed.     

In Situ Electronic Structure Study of Epitaxial Niobium Thin Films by Angle-Resolved Photoemission Spectroscopy

High-quality single crystalline niobium films are grown on a-plane sapphire in molecular beam epitaxy. The film is single crystalline with a(110) orientation, and both the rocking curve and the reflection high-energy electron diffraction pattern demonstrate its high-quality with an atomically smooth surface. By in situ study of its electronic structure, a rather weak electron-electron correlation effect is demonstrated experimentally in this4 d transition metal. Moreover, a kink structure is observed in the electronic structure, which may result from electron-phonon interaction and it might contribute to the superconductivity. Our results help to understand the properties of niobium deeply.     

The role of a ZnO buffer layer in the growth of ZnO thin film on Al2O3 substrate

A ZnO buffer layer and ZnO thin film have been deposited by the pulsed laser deposition technique at the temperatures of 200 C and 400 C, respectively. Structural, electrical and optical properties of ZnO thin films grown on sapphire (Al₂O₃) substrate with 1, 5, and 9 nm thick ZnO buffer layers were investigated. A minute shift of the (101) peak was observed which indicates that the lattice parameter was changed by varying the thickness of the buffer layer. High resolution transmission electron microscopy (TEM) was used to investigate the thickness of the ZnO buffer layer and the interface involving a thin ZnO buffer between the film and substrate. Selected area electron diffraction (SAED) patterns show high quality hexagonal ZnO thin film with 30 in-plane rotation with respect to the sapphire substrate. The use of the buffer can reduce the lattice mismatch between the ZnO thin film and sapphire substrate; therefore, the lattice constant of ZnO thin film grown on sapphire substrate became similar to that of bulk ZnO with increasing thickness of the buffer layer.