Effect of gamma irradiation on photoconversion characteristics of metal/gallium arsenide barrier structures with textured interface

The effect of ⁶⁰Co gamma irradiation at doses of 10³-2×10⁵ Gy on the photoconversion and dark I-V characteristics of Au/GaAs surface-barrier solar cells (SCs) is studied. The morphology of the interface microrelief is varied to reach the highest photoconversion efficiency. Of the two types of microrelief morphology (dendritic and quasi-grating) obtained by the chemical anisotropic etching of n-(100)GaAs, the latter is more promising, particularly for SCs designed for space application, since the associated SCs offer higher efficiency and radiation resistance.     

Effect of microrelief on the optical characteristics of light Cr-Zr copper alloys bombarded by ions of deuterium plasma

The effect of the structure and size of grains on changes in the microrelief and optical characteristics of specimens of mirrors made of copper alloys with substantially differing grain size upon bombardment by ions of deuterium plasma are studied. Based on a comprehensive study of the structural features of the surface layers of specimens of mirrors made of light copper-chromium alloys, a conclusion is drawn as to the determining role of grain size in their radiation properties.     

Temperature and external field-driven microrelief at free surface of smectic-A liquid crystal

A homeotropically oriented smectic-A film on a solid substrate with periodical microrelief is considered. Periodical distortions of the free surface of the film induced by this microrelief are theoretically investigated. The dependence of these distortions on the film thickness, the temperature, and external magnetic (electric) field is obtained. It is shown that, for a certain choice of the shape of the substrate surface microrelief, one can realize a temperature and external magnetic (electric) field control on the microrelief at the free surface of the smectic-A film.     

Light scattering by the surface of amorphous alloy ribbons modified by annealing and cryogenic treatment

The modification of the microrelief and structure of the surface layers of ribbons of an amorphous metal alloy based on iron and cobalt after thermal treatment at elevated and cryogenic temperatures and under the action of an external magnetic field is studied by the method of light scattering. The parameters of the surface roughness were calculated from the experimentally found indicatrices of light scattering. It is shown that heating of the metal ribbons to T=650–750 K partially relieves stresses arising in the course of the ribbon preparation and reduces the surface roughness as compared to that of freshly prepared samples. Cryogenic treatment at T=78 K increases the surface roughness, and application of a magnetic field to a ribbon causes anisotropy in the surface layer due to the magnetostrictive effect.     

Modeling of high permittivity insulator structure with interface charge by charge compensation

An analytical model of the power metal–oxide–semiconductor field-effect transistor(MOSFET)with high permittivity insulator structure(HKMOS)with interface charge is established based on superposition and developed for optimization by charge compensation.In light of charge compensation,the disturbance aroused by interface charge is efficiently compromised by introducing extra charge for maximizing breakdown voltage(BV)and minimizing specific ON-resistance(R_on,sp).From this optimization method,it is very efficient to obtain the design parameters to overcome the difficulty in implementing the R_on,sp–BV trade-off for quick design.The analytical results prove that in the HKMOS with positive or negative interface charge at a given length of drift region,the extraction of the parameters is qualitatively and quantitatively optimized for trading off BV and Ron,sp with JFET effect taken into account.     

Phase modulation of Bloch surface waves with the use of a diffraction microrelief at the boundary of a one-dimensional photonic crystal

Phase modulation methods for surface electromagnetic waves propagating at the interface between a homogeneous medium and a one-dimensional photonic crystal have been analyzed numerically and theoretically. Modulation is performed by changing the geometrical parameters of the microrelief on the surface of the photonic crystal. The phase modulation methods under consideration can be used to create optical elements for surface waves, in particular, lenses, prisms, and diffraction gratings. A Bragg grating has been calculated as an example. According to the simulation results, the average coefficient of reflection of a surface wave in the band gap is 0.95.     

Microrelief dependent on the temperature and external field on the free surface of a smectic-<Emphasis Type="Italic">A</Emphasis> liquid crystal

A homeotropically oriented smectic-A film on the surface of a solid substrate with a periodic microrelief is considered. Relationships are derived for describing the dependences of the microrelief-induced deformation of the free surface of the film on the film thickness, the temperature, and the external magnetic (electric) field strength. It is shown that, for a specific choice of the microrelief shape on the substrate surface, a variation in the sample temperature and the external magnetic (electric) field strength makes it possible to control not only the microrelief depth but also the shape of the microrelief formed on the free surface of the smectic-A film.     

Structure of the surface microrelief of a droplet evaporating from a rough substrate as a possible cause of contact angle hysteresis

Based on the refraction images of a droplet evaporating on a rough substrate, we simultaneously observed the dynamics of its surface microrelief, contact angle, and contact line deformations along the entire perimeter of the contact line. This has led us conclude that the microrelief structure is directly related to the phenomenon of contact angle hysteresis and the jump-like pattern of contact line deformation. We suggest a possible mechanism for the occurrence of contact angle hysteresis during droplet evaporation and derive the relations that specify the range of possible contact angles at known microrelief parameters.     

The technology of fabricating focusators of infrared laser radiation

The possibility of fabricating focusators of infrared laser radiation, based on photolithographic technology, is analysed. The realizability of focusator fabrication is based on the possibility of producing a set of binary photomasks and achieving the necessary depth of etching the substrate of the pattern while forming the microrelief. The possibility of producing these photomasks is evaluated with regard to the focusator's extremal zone width and the appearance of photomasks displayed on the screen. Forming of step-by-step microrelief is achieved using plasma etching or wet etching and depends on the minimum element's dimension and the etching depth. Examples of the microrelief's profiles, of focusators fabricated using photolithography, and the result of the transformation of a focusator's radiation into a straight line segment, are discussed.     

Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays

The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA.     

LaAlO_3/SrTiO_3界面增强光伏效应

探索LaAlO_3/SrTiO_3(LAO/STO)界面产生的新奇物理特性对理解关联电子系统中多自由度耦合和设计功能材料器件具有重要的价值.本文通过脉冲激光沉积方法在SrTiO_3基底上制备了LAO/STO薄膜,研究了正面照射LAO/STO膜面和侧面照射LAO/STO界面时的光伏效应,探讨了LAO/STO界面对光伏效应的影响.研究结果表明,在同样光照能量下侧面照射LAO/STO界面产生的光电压远高于正面照射LAO/STO膜面产生的光电压,说明LAO/STO界面对光伏效应有明显的增强作用.通过偏压调控可以进一步增强照射LAO/STO界面产生的光电压,当偏压为60 V时, LAO/STO样品的位置探测灵敏度达到了36.8 mV/mm.这些研究结果为设计场调控位置敏感探测器等新型光电子器件提供了新的思路.     

单光子晶体界面介质波导中的慢光效应

研究了单光子晶体界面介质波导中的慢光效应.芯层-空气层界面的全内反射效应以及光子晶体基底的禁带效应共同形成了对光场能量的横向约束.用基于超元胞的平面波展开法计算得到了导模色散曲线,并据此对其色散、群速以及群速色散性质做了详尽分析.由于利用了色散曲线慢光区域内拐点附近低群速色散的部分,该单光子晶体界面介质波导具有良好的慢光特性.对两个不同导模计算得到的平均群速分别为c/98和c/376,可用相对频带宽度分别达到2.1×10-3和4.1×10-4.另外,该慢光结构可以侧向耦合的方式克服光子晶体慢光波导耦合困难的缺点.     

Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states

The dual-channel nearly perfect absorption is realized by the coupled modes of topological interface states (TIS) in the near-infrared range. An all-dielectric layered heterostructure composed of photonic crystals (PhC)/graphene/PhC/graphene/PhC on GaAs substrate is proposed to excite the TIS at the interface of adjacent PhC with opposite topological properties. Based on finite element method (FEM) and transfer matrix method (TMM), the dual-channel absorption can be modulated by the periodic number of middle PhC, Fermi level of graphene, and angle of incident light (TE and TM polarizations). Especially, by fine-tuning the Fermi level of graphene around 0.4 eV, the absorption of both channels can be switched rapidly and synchronously. This design is hopefully integrated into silicon-based chips to control light.     

Nature of the electric forming of a thin film metal-dielectric-metal system

The influence on forming is considered in the paper of voltage, microrelief of the base electrode (BE), and width and technology of obtaining of a dielectric layer of an MDM-system. The presence is estabished experimentally of a critical width of a dielectric, depending on the microrelief of the BE, an increase of which makes forming impossible — only a breakdown is observed. Relying on the experimental results obtained, an inference is made that the most essential factors determining forming are the presence of a specific microrelief of the BE or defects of the dielectric film (cells, microfissures, et al.) and a specific correlation of the width of the dielectric film with the dimensions of the indicated microdefects.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 65–67, January, 1991.     

Dependence of transient photovoltage characteristics on bias light intensity for HgCdTe-based photovoltaic infrared detector pixel arrays

In this paper, experimental investigation of the photovoltaic effect of metal/semiconductor (M/S) interface in HgCdTe pixel arrays are reported. The transient photovoltaic (TPV) response was measured by using a pulsed laser under illumination of steady bias light. A tendency of polarity inversion from peak-to-valley of TPV was observed with increasing bias light intensity. Model for photovoltage transformation was proposed, and proved by comparing the response behavior before and after removing the aperture for the TPV measurements. The Schottky barrier junction of M/S interface is the key factor for the polarity reversal at different bias light intensity. The results provide an effective method to evaluate the electrode quality of the photodetector directly.     

On the formation of a wavy microrelief on an ion-beam-sputtered semiconductor surface

A mathematical model of regular wavy microrelief formation on a semiconductor surface subjected to an obliquely incident medium-energy ion be am is stated and analyzed. Taking into account the influence of fluctuation forces (the molecular component of the disjoining pressure) and of the ion-beam-transferred electric charge is shown to bring together model predictions and observations.     

非晶硅界面缓冲层对非晶硅锗电池性能的影响

针对非晶硅锗电池本征层高锗含量时界面带隙失配以及高界面缺陷密度造成电池开路电压和填充因子下降的问题,通过在PI界面插入具有合适带隙的非晶硅缓冲层,不仅有效缓和了带隙失配,降低界面复合,同时也通过降低界面缺陷密度改善内建电场分布,从而提高了电池的收集效率. 进一步引入IN界面缓冲层以及对非晶硅锗本征层进行能带梯度设计,在仅采用Al背电极时,单结非晶硅锗电池转换效率达8.72%. 关键词： 非晶硅缓冲层 非晶硅锗薄膜太阳电池 带隙 界面     

Ge/ZnSe(100)异质结能带偏移的同步辐射光电子能谱研究

利用同步辐射光电子能谱研究了Ge/ZnSe（100）极性界面的能带连接问题．表面灵敏的芯能级谱显示出Ge原子与Se原子在界面处存在较弱的化学反应．利用芯能级技术，测量了该异质结的价带偏移，为1.76±0.1eV．用界面键极性模型对ZnSe（100）极性表面对价带偏移的影响进行了讨论，理论与实验符合较好 关键词：     

Effect of dopant type on the formation of the growth relief of gallium arsenide in a chloride gas-transport system

The effect of dopants (zinc, tellurium) on the microrelief of the growth surface of autoepitaxial gallium arsenide layers is considered. It is shown that the type of dopant exerts a considerable effect on the characteristics of the microstep structure of the surface; the reasons for the reconstruction of the relief under the action of the dopant are analyzed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 44–48, January, 1976.