The Fermi surface of In2Bi

De Haas van Alphen experiments in high magnetic fields up to 35 T are presented. Earlier results from lower magnetic field investigations are re-interpreted. A model for the Fermi surface of In₂Bi is proposed, consistent with the available experimental information, using the fact that the energy bands along AL are double-degenerate and that In₂Bi is a compensated metal. The proposed model is essentially a two band model.     

Pressure-induced phase transformation in In2Bi

We have made measurements of the pressure dependence of the superconducting transition temperature, T_c, for In₂Bi and related alloys. For In₂Bi- phase alloys, a large discontinuity in T_c is seen at 15–20 kbar, which we associate with a phase transformation first seen by Bridgman [1]. Our measurements suggest that this transformation is produced by the decomposition of In₂Bi into In₅Bi₃ and an In-rich phase. In the low pressure phase, T_c shows a minimum at 9–15 kbar whereas it depends linearly on pressure in the high pressure phase with ?T_c/?P equal to -4.9 × 10^-5 K bar^-1.     

De Haas-van Alphen effect in In2Bi

We report de Haas-van Alphen measurements in the intermetallic compound In₂Bi in magnetic fields up to 15T. At least three dHvA frequency branches could be followed continuously at all field directions indicating three ellipsoid-type pieces of the Fermi surface. The largest two ellipsoids are likely located along the Brillouin zone edge HK.     

The pre-melting absorption of sound by In2Bi

Longitudinal ultrasound sets mobile dislocations into oscillation relative to the small liquid domains that develop near the melting point. The resultant attenuation goes inversely as the temperature displacement somewhat below the melting point, in agreement with the observations of Saunders and his colleagues.     

Synthesis and physical behaviour of In2S3 films

In₂S₃ layers have been grown by close-spaced evaporation of pre-synthesized In₂S₃ powder from its constituent elements. The layers were deposited on glass substrates at temperatures in the range, 200–350 °C. The effect of substrate temperature on composition, structure, morphology, electrical and optical properties of the as-grown indium sulfide films has been studied. The synthesized powder exhibited cubic structure with a grain size of 63.92 nm and S/In ratio of 1.01. The films grown at 200 °C were amorphous in nature while its crystallinity increased with the increase of substrate temperature to 300 °C. The films exhibited pure tetragonal β-In₂S₃ phase at the substrate temperature of 350 °C. The surface morphological analysis revealed that the films grown at 300 °C had an average roughness of 1.43 nm. These films showed a S/In ratio of 0.98 and a lower electrical resistivity of 1.28 × 10³ Ω cm. The optical band gap was found to be direct and the layers grown at 300 °C showed a higher optical transmittance of 78% and an energy band gap of 2.49 eV.     

112型铁基化合物EuFeAs2的单晶生长与表征

铁基超导体中含有一类特殊的112型结构化合物,其层状结构中含有一层锯齿形的As链构型.本文报道了用CsCl助熔剂法生长新型铁基112型EuFeAs₂母体单晶的具体方法,以及对该单晶的结构和物性的详细表征.通过能量色散X射线能谱扫描对单晶样品进行的化学成分分析,以及单晶X射线衍射的结构解析,确定该单晶样品属于EuFeAs₂相,结构精修得到EuFeAs₂具有空间群为Imm2（No.44）的正交晶体结构,晶格常数分别是a=21.285（9）Å,b=3.9082（10）Å,c=3.9752（9）Å.通过低温电阻测量,发现在110 K附近和46 K附近存在两个异常电阻跳变.进一步分析表明,110 K附近存在两个邻近的相变,这两个相变与铁基母体材料中常见的结构相变和Fe²⁺的反铁磁相变相符合.结合磁化率测量分析,可知46 K附近的相变属于Eu²⁺的反铁磁相变.     

Single crystal growth and electronic structure of Rh-doped Sr3Ir2O7

Ruddlesden-Popper iridate Sr₃Ir₂O₇ is a spin–orbit coupled Mott insulator. Hole doped Sr₃Ir₂O₇ provides an ideal platform to study the exotic quantum phenomena that occur near the metal–insulator transition(MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr₃Ir₂O₇ . However, the highest doping level reported in Sr3(Ir1-xRhx)2O7 single crystals was only around 3%,...     

Single crystal synthesis and electrical properties of CdSnO3, Cd2SnO4, In2TeO6 and Cdln2O4

Single crystals of CdSnO₃, Cd₂SnO₄, ln₂TeO₆ and CdIn₂O₄ were grown by either flux or high pressure methods. High electrical conductivity resulted from chemical substitution or oxygen deficiency. Crystallographic and conductivity data are given.     

Electrical and optical properties of single crystal In2Te3 and Ga2Te3

Electrical conductivity and thermopower measurements are reported for the defect semiconductors p-In₂Te₃ and n-Ga₂Te₃. The hole mobility μ_p in the former varied as Tⁿwheren=+5.98 forT<350 K and n=-4.13 forT>350 K showing a maximum of 210 cm²V^-1 sec^-1 at 350 K. Electron mobility in n-Ga₂Te₃ also went through a maximum at 320 K. The optical band-gaps for both were found to be direct, with values of 1.01 and 1.08 eV for In₂Te₃ and Ga₂Te₃ respectively at 300 K. Pronounced effects of annealing on TEP and optical absorption gave evidence of defect ordering at low temperatures followed by defect creation at T>350 K.     

强耦合磁失措自旋冰系统Dy2Ti2O7单晶生长和基本磁性质测量

利用红外光源浮区法生长出大尺寸、高质量的磁失措自旋冰化合物Dy₂Ti₂O₇单晶体.X射线衍射实验证实晶体具有面心立方结构，空间群为Fd3m，晶胞参数a＝1.0112(2) nm，［111］和［400］方向X射线衍射摇摆曲线半高宽分别仅为0.07°和0.05°.直流磁化率与温度关系测量给出晶体的Van Vleck顺磁因子为2.46×10^-5 m³/mol，有效磁矩μ_eff＝10.24(4)μ_B，Cure-Weiss温度Θ_CW＝1.1 K，揭示Dy₂Ti₂O₇具有弱的铁磁性.对磁性起源的综合分析表明，该自旋冰晶体磁性质主要来源于磁偶极相互作用，且相关最近邻长程偶极相互作用能量标度D_nn＝3.00 K. 关键词： 2Ti₂O₇')" href="#">Dy₂Ti₂O₇ 浮区法晶体生长 关联电子系统 自旋冰     

Coexistence of superconductivity and antiferromagentic order in Er2O2Bi with anti-ThCr2Si2 structure

We investigated the coexistence of superconductivity and antiferromagnetic order in the compound Er₂O₂Bi with anti-ThCr₂Si₂-type structure through resistivity, magnetization, specific heat measurements and first-principle calculations. The superconducting transition temperature T_c of 1.23 K and antiferromagnetic transition temperature TN of 3 K are observed in the sample with the best nominal composition. The superconducting upper critical field H_c2(0) and electron-phonon coupling constant λ_e−ph in Er₂O₂Bi are similar to those in the previously reported non-magnetic superconductor Y2O2Bi with the same structure, indicating that the superconductivity in Er₂O₂Bi may have the same origin as in Y₂O₂Bi. The first-principle calculations of Er₂O₂Bi show that the Fermi surface is mainly composed of the Bi 6p orbitals both in the paramagnetic and antiferromagnetic state, implying minor effect of the 4f electrons on the Fermi surface. Besides, upon increasing the oxygen incorporation in Er₂O_xBi, Tc increases from 1 to 1.23 K and T_N decreases slightly from 3 K to 2.96 K, revealing that superconductivity and antiferromagnetic order may compete with each other. The Hall effect measurements indicate that hole-type carrier density indeed increases with increasing oxygen content, which may account for the variations of T_c and T_N with different oxygen content.     

Crystal growth and dielectric, piezoelectric and elastic properties of Ca3TaGa3Si2O14 single crystal

Single crystals of Ca₃TaGa₃Si₂O₁₄ (CTGS) were successfully grown from stoichiometric melts by the conventional Czochralski technique. The relative dielectric constants, the piezoelectric strain constants and the elastic compliance constants of CTGS single crystal have been determined by an electric bridge and resonance-antiresonance method. At room temperature, the two piezoelectric strain constants d₁₁ and d₁₄ are −4.58×10⁻¹² coulombs per newton (C/N) and 10.43×10⁻¹² coulombs per newton (C/N), respectively. The velocities of the bulk acoustic wave are also calculated.     

Synthesis and performance of core-shell structured ZnO/In2O3 composites in situ growth

Core-shell structured ZnO/In₂O₃ composites were successfully synthesized via situ growth method. Phase structure, morphology, microstructure and property of the products were investigated by X-ray diffraction (XRD), TG-DTA, field emission scanning electron microscopy (FESEM), energy-dispersive spectrometry (EDS), transmission electron microscope (TEM) and photoluminescence (PL). Results show that the core-shell structures consist of spindle-like ZnO with about 800 nm in length and 200 nm in diameter, and In₂O₃ particles with a diameter of 50 nm coated on the surface of ZnO uniformly. HMTA plays an important role in the formation of core-shell structures and the addition of In₂O₃ has a great effect on PL spectrum. Possible mechanism for the formation of core-shell structures is also proposed in this paper.     

The elastic behaviour of the ternary zincblende structure semiconductor CuGe2P3

A single crystal has been grown of CuGe₂P₃, a ternary semiconductor with a zincblende structure in which the copper and germanium atoms are randomly distributed on the cation sites. The second order elastic constants measured by the ultrasonic pulse echo overlap technique (C₁₁ = 13.66, C₁₂ = 6.17, C₄₄ = 6.66 and bulk modulus B = 8.67 in units of 10¹⁰Nm^?2 at 291 K) are closely similar to those of GaP and conform well to Keyes' correlation for zincblende structure crystals. The hydrostatic pressure derivatives of the second order elastic constants ($\text{?C}{}_{11}\text{?P}\text{= 4.40}$, $\text{?C}{}_{12}\text{?P}\text{= 3.9}$, $\text{?C}{}_{44}\text{?P}\text{= 0.93}$ and $\text{?B}\text{?P}\text{= 4.07}$) and the third order elastic constants (C₁₁₁ = ? 8.45, C₁₁₂ = ? 3.49, C₁₂₃ = ? 1.13, C₁₄₄ = ? 2.82, C₁₅₅ = ? 1.44 and C₄₅₆ = ? 0.69 in units of 10¹¹Nm^?2) also resemble those of GaP: even the anharmonicity of the long wavelength acoustic modes of this ternary semiconductor resembles that of its binary “parent” compound. The positive signs of the hydrostatic pressure derivatives and the negative signs of the third order elastic constants show that the acoustic modes at the long wavelength limit stiffen under pressure, an effect which is quantified here by computation of the mode Grüneisen parameters, which are all positive. The harmonic and anharmonic force constants, obtained in the valence force field model, fit well into the pattern shown by related zincblende structure compounds: the ratio ($\text{β}\text{α}$) for bond bending (β) to stretching (α) force constants is greater than 4:1; the dominating anharmonic force constant is γ: most of the anharmonicity is associated with nearest neighbour atoms. Analysis of the temperature dependence of the elastic constants on the basis of a simple anharmonic model again emphasises the similarity between the elastic behaviour of CuGe₂P₃ and GaP. The thermal expansion of CuGe₂P₃ varies almost linearly with temperature between 291 K and 1000 K, the linear coefficient of thermal expansion α being 8.21 ± 0.02 × 10^?6 °C^?1. The similar lattice parameters and elastic behaviour of CuGe₂P₃ and GaP indicate that semiconducting devices made of epitaxial deposits of CuGe₂P₃ on a GaP substrate should prove to be almost strain-free.     

Diffuse dielectric anomaly of （Na0.5K0.5Bi）0.5TiO3 crystal at high temperature

This paper investigates the dielectric properties of (Na_0.5K_0.5Bi)_0.5TiO₃ crystal at intermediate frequencies (1kHz \le f \le 1MHz) in the temperature range of 30--560℃. A pronounced high-temperature diffuse dielectric anomaly has been observed. This dielectric anomaly is shown to arise from a Debye-like dielectric dispersion that slows down following an Arrhenius law. The activation energy E_r obtained in the fitting process is about 0.69eV. It proposes that the dielectric peak measured at low frequency above 400℃ is not related to the phase transition but to a space-charge relaxation.     

Characterization of interface between CuInSe2 and In2O3

CuInSe₂/In₂O₃ structures were formed by depositing CuInSe₂ films by stepwise flash evaporation onto In₂O₃ films, which were grown by DC reactive sputtering of In target in presence of (Ar+O₂) gas mixture. Phase purity of the CuInSe₂ and In₂O₃ films was confirmed by Transmission Electron Microscopy (TEM) studies. X-ray diffraction (XRD) results on CuInSe₂/In₂O₃/glass structures showed sharp peaks corresponding to (112) plane of CuInSe₂ and (222) plane of In₂O_3. Rutherford Backscattering Spectrometry (RBS) investigations were carried out on CuInSe₂/In₂O₃/Si structures in order to characterize the interface between In₂O₃ and CuInSe₂. The results show that the CuInSe₂ films were near stoichoimetric and In₂O₃ films had oxygen deficient composition. CuInSe₂/In₂O₃ interface was found to include a ∼20 nm thick region consisting of copper, indium and oxygen. Also, the In₂O₃/Si interface showed the formation of ∼20 nm thick region consisting of silicon, indium and oxygen. The results are explained on the basis of diffusion/reaction taking place at the respective interfaces.     

The influence of interfacial barrier engineering on the resistance switching of In2O3：SnO2/TiO2/In2O3：SnO2 device

The I-V characteristics of In2O3：SnO2/TiO2/In2O3：SnO2 junctions with different interracial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interracial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interracial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.     

High elastic modulus in b-axis-oriented single crystal V2O5

The elastic moduli of V₂O₅ are of great importance for the assessment of the buildup of strain during thin-film growth as well as for the analysis of defect generation and propagation. The usually rather small crystal dimensions make a precise experimental determination of the elastic constants highly challenging and only very little is known about the temperature dependent strain evolution. Here large V₂O₅ single crystals grown with different parameter sets are investigated by ultrasonic pulse experiments and by sampled continuous wave ultrasound spectroscopy. The elastic modulus C₂₂ is determined to be 220 GPa at room temperature. Temperature dependent investigations of the elastic behavior show that ultrasonic experiments are suitable for highly sensitive detection of oxygen-deficient phases in rapidly grown samples. In addition they indicate the presence of temperature dependent elastic instabilities in inhomogeneous samples.     

Electron concentration and mobility in In2O3

The electron concentration and mobility in polycrystalline In₂O₃ have been measured as a function of temperature and partial oxygen pressure, in the temperature range from 25 to 700°C. These experimental data are critically compared with literature data. A conduction model is proposed. Theoretical values of the electron concentration as a function of the partial oxygen pressure are reported for temperatures from 700 to 1400°C. An estimate is given for the minimum room temperature “intrinsic” electron concentration in In₂O₃ after a high temperature annealing experiment. It is also shown that interpretations of conductivity values for porous material in terms of carrier concentration only, can be very misguiding.     

Tb3+-activated In2Si2O7 phosphor

Indium silicate activated by terbium was found to be an efficient phosphor with CR excitation, the luminosity of which was comparable to the most luminous of other terbium-activated silicates. For the preparation of this phosphor, alkaline earth metal flourides proved to act as a good mineralizer. The best result was obtained when a mixture of 1 mol In₂O₃, 2.2 mol SiO₂, 0.015 mol Tb₄O₇ and 0.05 mol BaF₂ was fired at 1 400°C in air for 4 h. Other rare earth luminescent centers such as Ce, Pr, Eu, Dy, Er and Tm were examined but none showed noticeable emission. Some UV excitation properties are also described.