共查询到20条相似文献,搜索用时 15 毫秒
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介绍了集成电路的EMC 问题和EMC 设计方法,重点论述了在集成电路研制过程中,在电路、版图、封装设计
各个阶段EMC 设计的要点。 相似文献
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A high sensitivity, infrared (IR) microscope operating in the wavelength range 800 to 2500 nm has been applied to a variety of packaging related issues. Applications can be divided into three categories. 1) For flip chip devices the advantage of the IR microscope is that most silicon is effectively transparent at wavelengths greater than 1100 nm. This enable defects such as voids, delamination cracks and corrosion to be investigated while the chip is mounted on the substrate. 2) The IR microscope enables thermal images of devices to be obtained with a temperature resolution of approximately 1 K and spatial resolution of 2-3 /spl mu/m. 3) The transparency of silicon to IR radiation has proved particularly valuable for characterising micro-electro-mechanical systems (MEMS) devices such as microphones, at various stages of packaging, e.g., after die bonding and wire bonding. 相似文献
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《Solid-State Circuits, IEEE Journal of》1978,13(2):265-266
Powering integrated circuits is a compromise between increasing power to increase circuit speed and maintaining high packaging density while satisfying cooling constraints. The optimization of this compromise provides the basis for a packaging figure of merit. 相似文献
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Polsky Y. Sutherlin W. Ume I.C. 《Electronics Packaging Manufacturing, IEEE Transactions on》2000,23(3):191-199
Two types of bare, four layer printed wiring board (PWB) test vehicles were designed and fabricated to replicate simplified versions of typical boards produced by PWB manufacturers. The boards were subjected to simulated infrared and wave soldering reflow processes in a small lab-scale oven integrated with a shadow Moire out-of-plane displacement measurement system. The measured warpages were qualitatively and quantitatively analyzed at selected temperatures during the reflow profiles. The results presented compare and contrast the effects that simulated wave and infrared reflow soldering processes have on the warpage of two different PWB designs 相似文献
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K.N. Tu 《Microelectronics Reliability》2011,51(3):517-523
At the moment, a major paradigm change, from 2D IC to 3D IC, is occurring in microelectronic industry. Joule heating is serious in 3D IC, and vertical interconnect is the critical element to be developed. Also reliability concerns will be extremely important. For example, in order to remove heat, a temperature gradient must exist in the packaging. If we assume just a difference of 1 °C across a micro-bump of 10 μm in diameter, the temperature gradient is 1000 °C/cm which cannot be ignored due to thermomigration. Equally challenging reliability issues are electromigration and stress-migration. Since the 3D IC structure is new, the details of reliability problems are mostly unknown. This paper presents a projection of the reliability challenges in 3D IC packaging technology on the basis of what we have known from flip chip technology. 相似文献
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The warpage orientation, which refers to the direction of maximum and minimum curvatures in a cylindrical warpage, was observed to have changed by flipping from a concave to a convex shape during thermal processing. In this paper, the mechanism of the warpage orientation rotation is demonstrated through analyzing the stress state and curvatures of the specimens using finite element method (FEM) simulations and experiments. It is revealed that the warpage transition temperature, where the curvature changes to other shapes, corresponds to the stationary point of the stress-temperature curve and the curvature change of the minimum direction precedes the curvature change of the maximum direction during the warpage orientation rotation. This precedence results from the stress relaxation of the fiber reinforced polymer (FRP) substrate. Because the curvature of minimum direction flips backward in advance of maximum direction, the cylindrical warpage shape converts to a saddle shape and it induces the rotation of the warpage orientation. The simulation without the viscoelastic properties of the FRP substrate is conducted and used for comparison in order to verify the stress relaxation effect of the warpage orientation rotation phenomenon. In conclusion, it is demonstrated that the viscoelastic properties of the FRP substrate are a critical factor in analyzing the warpage orientation rotation and its behavior. 相似文献
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Characterisation of IC packaging interfaces and loading effects 总被引:1,自引:0,他引:1
In IC packaging, the quality of the interfaces such as that between mold compound and silicon is a critical issue in the reliability testing during the manufacturing process and in-service. Weak interfaces have often gone undetected and may become potentially defective at a later stage. Furthermore, the stress due to mechanical or thermal loading may further deteriorate the interface quality, making the interface unreliable. There is a desire to study the interface quality quantitatively, so potential defects can be evaluated and identified early. In this paper, finite element analysis using multilayer interface model is used to study the reflection coefficient from the interface of varying quality. Different conditioning techniques were used to degrade the interface quality. Characterisation of the interface quality of the MC/Si interface was conducted using longitudinal ultrasonic wave propagation with contact transducers. A combined test that measures the reflection coefficient of the interface under stress load was also conducted to quantify the effect of the load. A nondestructive evaluation methodology is proposed that measures the available strength of the interface by using ultrasonic reflection coefficients, and it shows the correlation between the reflection coefficient and available strength of the interface can be developed and used as a quantitative indicator. 相似文献
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《Microelectronics Reliability》2015,55(2):418-423
The wafer warpage problem, mainly originated from coefficient of thermal expansion mismatch between the materials, becomes serious in wafer level packaging as large diameter wafer is adopted currently. The warpage poses threats to wafer handling, process qualities, and can also lead to serious reliability problems. In this paper, a novel mechanical diced trench structure was proposed to reduce the final wafer warpage. Deep patterned trenches with a depth about 100 μm were fabricated in the Si substrate by mechanical dicing method. Both experiment and simulation approaches were used to investigate the effect of the trenches on the wafer warpage and the influence of the geometry of the trenches was also studied. The results indicate that, by forming deep trenches, the stress on the individual die is decoupled and the total wafer warpage could be reduced. The final wafer warpage is closely related to the trench depth and die width. Trenched sample with a depth of 100 μm can decrease the wafer warpage by 51.4%. 相似文献
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在分析芯片内部分层不良的过程中发现使用N型EMC所生产的产品占据了所有分层不良的绝大多数。对使用N型EMC生产制程中从注胶模压到弯脚成形的每一个步骤完成后均对产品进行超声波探测(SAM),发现去残胶制程(De-flash)最有可能导致芯片内部分层,而其他制程不会导致分层。EMC是由许多高分子树脂材料及各种添加剂组成,这... 相似文献
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Xiaosong Ma K.M.B. Jansen L.J. Ernst W.D. van Driel O. van der Sluis G.Q. Zhang 《Microelectronics Reliability》2007,47(9-11):1685
In this paper we determined the water uptake of a die attach and a molding compound. The two types of polymer which were selected are a die attach filled with silver particles and an epoxy molding compound filled with silica particles. The water absorption is carried out in an adjustable thermal and humidity chamber, SGA-100, at different temperatures and humidity levels. Moisture absorption equilibrium of test data were obtained by experiment. The moisture absorption equilibrium prediction equation was modeled by using the extrapolated experimental data. Diffusion coefficients at different temperature were obtained from the moisture absorption experiments. 相似文献
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Abdul J. Wang Y. Guo N. Rehman A.U. Chan K.C. 《Electronics Packaging Manufacturing, IEEE Transactions on》2003,26(3):221-227
The silicon die and copper lead-frame in integrated circuit (IC) packaging are bonded using a die attach adhesive, and the quality of the adhesive interface is a critical issue in the reliability testing of IC packaging and during the manufacturing process. Common defects such as cracks and delamination can be detected using the C-mode ultrasonic microscopic method with sufficient confidence. However, a weak interface due to weak adhesion and poor cohesion has often gone undetected and may become a potential defect at a later stage. There is a desire to study the interface quality quantitatively, so that any potentially defective area can be evaluated and identified early. This paper describes work in evaluating the quality of the interfaces that typically exist in IC packages by using longitudinal ultrasonic wave propagation with contact transducers. An interface spring model is used to predict the ultrasonic reflection coefficient relationship with varying interfacial spring constants. Experimental results of normal incidence reflection coefficients are obtained from the two-layered specimen bonded with die attach adhesive under varying conditioning process that simulates the degrading of the interface. Good qualitative agreement between the measurement and the prediction is obtained, and shows that the reflection coefficient depends strongly on the interface quality. The study demonstrates that the quantification of the interface quality is possible, using the reflection coefficient as a criterion. 相似文献
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C.Y. Khor M.Z. Abdullah H.J. Tony Tan W.C. Leong D. Ramdan 《Microelectronics Reliability》2012,52(1):241-252
In the present study, experiment and simulation studies were conducted on the fluid/structure interaction (FSI) analysis of integrated circuit (IC) packaging. The visualisation of FSI phenomenon in the actual package is difficult due to limitations of package size, available equipment, and the high cost of the experimental setup. However, the experimental data are necessary to validate the simulation results in the FSI analysis of IC packaging. Scaled-up package size was fabricated to emulate the encapsulation of IC packaging and to study the effects of FSI phenomenon in the moulded package. The interaction between the fluid and the structure was observed. The deformation of the imitated chip was studied experimentally. The air-trap mechanism that occurred during the experiment is also presented in this paper. Simulation technique was utilised to validate the experimental result and to describe the physics of FSI. The predicted flow front was validated well by the experiment. Hence, the virtual modelling technique was proven to be excellent in handling this problem. The study also extends FSI modelling in actual-size packaging. 相似文献
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Paddle shift is one of the most serious defects which may arise during the IC encapsulation of leadframe-type packages. The term “paddle shift” means the deflection of the leadframe-pad and die as a result of the pressure difference between the top and bottom mold cavities. In extreme cases, paddle shift could lead to a substantial reduction in the reliability of package.This paper employed a computational approach to predict the paddle shift quantity during the IC packaging process. The approach was based on precise finite element (FE) models and flow-structure decoupled analyses. Two kinds of FE models were needed for the decoupled analyses, namely a 3D FE model for the mold filling analysis (i.e. fluid-flow mesh) and a 3D FE model for the structural analysis (i.e. paddle mesh). The aim of the mold filling analysis was to identify the pressure distribution acting on the paddle structure during the encapsulation process, while the objective of the structural analysis was to determine the amount of paddle shift which was caused by pressure distribution.To investigate the relationship between the package geometry and the amount of paddle shift, the present simulations considered six TQFP (Thin quad flat package) models with different geometrical parameters. The simulation results for the paddle shift were compared with the experimental results to demonstrate the accuracy of the proposed numerical approach. It was found that a good agreement exists between the two sets of results. 相似文献
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基于BP神经网络的模塑封材料疲劳寿命预测 总被引:2,自引:2,他引:0
根据模塑封材料(EMC)疲劳实验,针对BP神经网络[反向传播神经网络(BPNN)]拟合误差与预测误差关系不稳定的应用问题,结合主成分分析法,"主动"改善网络结构,建立了基于BP神经网络的EMC材料疲劳寿命预测模型,进行了分析,并与一般的BP神经网络模型作了比较。结果表明,该方法得到的BP神经网络经过训练后能稳定表征EMC材料的各种参数与疲劳寿命间的内在关系。当网络拓扑结构为2-4-1时,预测结果稳定,预测误差平方和(SSE)为0.5623~0.0271,拟合误差(MSE)为0.0906~0.0278,具有实用性。 相似文献