共查询到20条相似文献,搜索用时 78 毫秒
1.
本文对双极型静电感应晶体管(BSIT)的工作机理进行了二维分析,给出了明确的BSIT从单极作用机制到双转变过程的物理图象。得到了作用机制转变时的栅压、势分布以及载流子和电场分布等的数值计算结果。 相似文献
2.
3.
4.
5.
通过双极型静电感应晶体管(BSIT)与普通双极型晶体管(BJT)温度特性的对比,研究BSIT的温度特性。由实验看出,影响BSIT温度特性的主要因素是载流了迁移率μ和邮源极越过势垒的电子数目n。以盯可解释几个在观察BSIT温度特性时所遇到的现象。 相似文献
6.
从理论和实验两方面对静电感应晶体管(BSIT)的开关时间进行了分析和测量,提出了简单的分析方法,将影响BSIT开关时间的各个因素归结为结构因子和材料因子,从而简化了分析影响BSIT开关时间的因素,对于BSIT的实际工艺,结构设计有指导意义。 相似文献
7.
作为一种新型的功率半导体器件,绝缘栅双极型晶体管(IGBT)以其优越的性能,成为中高功率电力电子领域的主流功率开关器件,被广泛应用于智能电网、新能源、高速铁路、工业控制、汽车电子、家电产品、消费电子等领域。概述了IGBT的演变历程以及主要技术发展,同时对我国IGBT的发展现状进行了分析。 相似文献
8.
本文简要叙述了开发和研制BSIT的市场背景和技术现状,对BSIT器件模型进行了理论分析,对BSIT器件的设计和制作工艺进行了探讨,并分析了BSIT器件的工作原理和特性;介绍了BSIT器件的应用和上灯试用情况。 相似文献
9.
10.
11.
The failure of a bipolar static induction transistor(BSIT) often occurs in the transient process between the conducting-state and the blocking-state,so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices.The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper.The influences of material,structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth.The technological approaches are developed to improve the dynamical characteristics of BSITs. 相似文献
12.
13.
电力静电感应晶体管大电压特性的改善 总被引:1,自引:2,他引:1
A novel structure for designing and fabricating a power static induction transistor(SIT)with excellent high breakdown voltage performance is presented.The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance,and to avoid the parallel-current effect in particular.Three ring-shape junctions(RSJ)are arranged around the gate junction to reduce the electric field intensity.It is important to achieve maximum gate–source breakdown voltage BVGS, gate–drain breakdown voltage BVGD and blocking voltage for high power application.A number of technological methods to increase BVGD and BVGS are presented.The BVGS of the power SIT has been increased to 110 V from a previous value of 50–60 V,and the performance of the power SIT has been greatly improved.The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum BVGS of the structure are also presented. 相似文献
14.
A novel structure for designing and fabricating a power static induction transistor (SIT) with excellent high breakdown voltage performance is presented. The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance, and to avoid the parallel-current effect in particular. Three ring-shape junctions (RSJ) are arranged around the gate junction to reduce the electric field intensity. It is important to achieve maximum gate-source breakdown voltage BVGS, gate-drain breakdown voltage BVGD and blocking voltage for high power application. A number of technological methods to increase BVgd and BVGs are presented. The BVGS of the power SIT has been increased to 110 V from a previous value of 50-60 V, and the performance of the power SIT has been greatly improved. The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum B VGS of the structure are also presented. 相似文献
15.
Usually, the drain-source current (IDS) increases with positive drain-source voltage (VDS) for pentacene-based organic static induction transistor (OSIT) ITO(Source)/Pentacene/Al(Gate)/Pentacene/Au(Drain) and it shows an inherent rectifying property under negative gate voltages (VG), i.e. the slope of IDS vs. VDS curve increases with VDS but without any current saturation effect. In this paper, we investigated the electrical characteristics of pentacene-based OSIT ITO/Pentacene(80 nm)/Al(15 nm)/Pentacene(80 nm)/Au under negative VDS and VG, and found that IDS changed from rectifying property to saturation effect when the magnitude of negative VDS was increased from 0 V to −6 V under negative VG, and the turn-on voltage (VON) moved to larger negative voltages when the magnitude of negative VG increased and the movement step of VON gets smaller after keeping the device for a long time, and the possible mechanisms for such a kind of current modulation were discussed. 相似文献
16.
17.
J. H. Chun B. H. Lee D. S. Byeon D. Y. Kim M. K. Han Y. I. Choi 《Microelectronics Reliability》1999,39(1):29
A vertical Insulated Gate Bipolar Transistor, entitled CB-IGBT(Carrier-inducing Barrier-controlled IGBT) has been proposed and verified by a two-dimensional numerical simulation. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the anode structure in which the p-barrier region and n+ anode region are employed. In the CB-IGBT, the potential barrier height at the junction between the p-barrier region and n-drift region is controlled by the amount of carriers, so that the trade-off relation between the on-state voltage drop and the switching speed is decoupled efficiently. The switching speed of CB-IGBT is so much enhanced with a negligible increase of the on-state voltage drop, since electrons stored in the n-drift region can be extracted rapidly into the n+ anode via p-barrier region during turn-off process. 相似文献
18.
对埋栅型SIT,为切断栅极和源极(或阴极)之间在外延过程中形成的连体,打开栅电极区,进行外延后的台面刻蚀,对台面刻蚀的深度和形状进行研究;为消除栅墙外划片边界造成的各种寄生效应,在有源区的外面挖深槽,以保证栅源击穿发生在内部、实现击穿接近理论值。对先刻蚀台面还是先刻蚀槽的问题做了实验对比,结果发现先台后槽更有利于器件特性的改善。 相似文献
19.
An ideal static induction transistor (ISIT) structure was fabricated using molecular layer epitaxy (MLE). The doping method of MLE enabled us to achieve a sufficiently high level of doping for ISIT fabrication. In the fabrication process a low growth temperature was very important for the device structure, which requires very sharp dopant profiles. For the ISIT, two MLE processes, namely source–drain growth and gate regrowth, were required. The electrical characteristics of the source–drain were changed after heat treatment at a temperature higher than 480°C. The effect of the redistribution of dopants of the source–drain structure (n++–i–p++–i–n+) during gate regrowth was clearly shown by SIMS (secondary ion mass spectroscopy) measurements for various temperatures of heat treatment. As a result the doped Se diffused from the n++ source region to the other layers and the doped Zn diffused from the p++ layer to the i-layers. The source was a heavily Se-doped layer at the doping level of (2–3)×1019 cm−3 containing a larger amount of interstitial Se atoms in the lattice. The redistribution of Se from the heavily doped region was detectable even after heat treatment at 480°C for 30 min. For the p++ layer the profile of the C-doped layer was stable even after heat treatment at 620°C for 30 min, but the profile of Zn changed markedly after heat treatment at 480°C for 30 min. In addition, the carbon-doped p++ layer acted as a gettering layer for diffused interstitial Se from the source region. The driving force of the redistribution of dopants results in the electric field in the device structures. © 1997 John Wiley & Sons, Ltd. 相似文献