Optical In Situ Size and Concentration Measurement of Particles Dispersed in Gases at Temperatures up to 1000°C

Based on previous experience, an optical particle counter has been designed which allows the direct measurement of the size and concentration of dust particles in gas flows at high temperatures. The instrument features a new optical measuring volume definition together with a signal control to avoid border‐zone error effects. The instrument has a free working distance of 200 mm. Hence it is possible to make true in situ measurements in pipe flows with a cross‐section of ca. 60 cm² and additionally to protect the device against heat and dust precipitation on the optical windows. The instrument was initially used to examine the separation behaviour of cake‐forming rigid ceramic barrier filters at temperatures up to 1000 °C. In particular, the fractional efficiencies and the time‐related concentration changes on the clean gas side caused by a pulse jet cleaning event could be determined. The results obtained so far demonstrate that ceramic barrier filters show basically the same behaviour as conventional filters, but possess a substantially higher separation efficiency at a corresponding higher pressure drop (fractional penetration values between 10⁻⁵ and 10⁻⁹ depending on the type of filter material and the cake formation).     

In situ oxidation study of MgO(1 0 0) supported Pd nanoparticles

We have investigated the oxidation behavior of Pd nanoparticles grown epitaxially on MgO(1 0 0) single crystal substrates. We find that the interaction of oxygen with octahedral Pd nanoparticles at 500 K can be subdivided in three stages: above 10⁻⁶ mbar O₂ pressure, the particles start to flatten; above 10⁻³ mbar, the particles begin to shrink laterally and to be less truncated at the corners. The formation of epitaxial bulk PdO sets in at oxygen pressures above 0.1 mbar, which is accompanied by a continuous shrinkage of the Pd particles. Our results point to a novel nanoparticle oxidation mechanism: the Pd particles act as dissociation centers for O₂ and serve at the same time as source for Pd atoms resulting in epitaxial PdO growth on MgO(1 0 0).     

Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C

The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in‐situ Raman spectra. The data suggest that the as‐deposited material consisting of a mixture of polycrystalline InSb_0.8Te_0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In₃SbTe₂, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb_0.8Te_0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Oxidation and thermal reduction of the Cu(1 0 0) surface as studied using positron annihilation induced Auger electron spectroscopy (PAES)

Changes in the surface of an oxidized Cu(1 0 0) single crystal resulting from vacuum annealing have been investigated using positron annihilation induced Auger electron spectroscopy (PAES). PAES measurements show a large increase in the intensity of the annihilation induced Cu M_2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300 °C. The intensity then decreases monotonically as the annealing temperature is increased to ∼600 °C. Experimental probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons are estimated from the measured intensities of the positron annihilation induced Cu M_2,3VV and O KLL Auger transitions. Experimental PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface, surface reconstructions, and electron-positron correlations effects. The effects of oxygen adsorption on localization of positron surface state wave function and annihilation characteristics are also analyzed. Possible explanation is proposed for the observed behavior of the intensity of positron annihilation induced Cu M_2,3VV and O KLL Auger peaks and probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons with changes of the annealing temperature.     

Growth and oxidation of Cr films on the W(1 0 0) surface

The growth and oxidation of Cr films on the W(1 0 0) surface have been studied with low energy electron microscopy (LEEM) and diffraction (LEED). Cr grows in a Stranski-Krastanov (SK) mode above about 550 K and in a kinetically limited layer-by-layer mode at lower temperature. Stress relief in the highly strained pseudomorphic (ps) Cr film appears to be achieved by the formation of (4 × 4) periodic inclusions during the growth of the third layer between 575 and 630 K and by growth morphological instabilities of the third layer at higher temperature. Kinetic or stress-induced roughening is observed at lower temperature. In the SK regime, three-dimensional (3D) Cr islands nucleate after the growth of three Cr layers. 3D island nucleation triggers dewetting of one layer from the surrounding Cr film. Thus, two ps Cr layers are thermodynamically stable. However, one and two layer ps Cr films are unstable during oxidation. 3D clusters, that produce complex diffraction features and are believed to be Cr₂O₃, are formed during oxidation of one Cr layer at elevated temperature, T ? 790 K. The single layer Cr film remains intact during oxidation at T ? 630 K. 3D bulk Cr clusters are formed predominantly during oxidation of two ps Cr layers.     

Diffusion of oxygen atom in the topmost layer of the Si(1 0 0) surface: Structures and oxidation kinetics

The incorporations and migrations of the atomic oxygen in the topmost layer Si(1 0 0)-p(2 × 2) silicon surface, are investigated theoretically using density functional theory. We show that the diffusion is dependent on the starting and the final surrounding environment and does not simply consist in hops from one silicon-silicon bond to another. The activation energies range from 0.11 eV to 2.59 eV.     

Stress development and impurity segregation during oxidation of the Si(1 0 0) surface

We have studied the segregation of P and B impurities during oxidation of the Si(1 0 0) surface by means of combined static and dynamical first-principles simulations based on density functional theory. In the bare surface, dopants segregate to chemically stable surface sites or to locally compressed subsurface sites. Surface oxidation is accompanied by development of tensile surface stress up to 2.9 Nm⁻¹ at a coverage of 1.5 monolayers of oxygen and by formation of oxidised Si species with charges increasing approximately linearly with the number of neighbouring oxygen atoms. Substitutional P and B defects are energetically unstable within the native oxide layer, and are preferentially located at or beneath the Si/SiO_x interface. Consistently, first-principles molecular dynamics simulations of native oxide formation on doped surfaces reveal that dopants avoid the formation of P-O and B-O bonds, suggesting a surface oxidation mechanism whereby impurities remain trapped at the Si/SiO_x interface. This seems to preclude a direct influence of impurities on the surface electrostatics and, hence, on the interactions with an external environment.     

Investigation of the structure and surface characteristics of Cu-Ni-M(III) mixed oxides (M = Al, Cr and In) prepared from layered double hydroxide precursors

The Cu-Ni-M(III) mixed oxides (M = Al, Cr and In) were prepared by calcination of layered double hydroxide precursors with Cu²⁺/Ni²⁺/M³⁺ ratio of 1/2/1. The materials were characterized by means of powder X-ray diffraction (XRD), Fourier transform infrared (FT-IR), thermogravimetric-differential thermal analysis (TG-DTA), X-ray photoelectron spectroscopy (XPS) and low temperature N₂ adsorption-desorption experiments. The results indicated that calcination of precursors at 500 °C gave rise to mixed metal oxides including simple oxides and composite oxides, and the composition distributions of obtained oxides depended on the nature of trivalent cation in precursors. Under mild experimental conditions (atmospheric pressure and 25 °C), oxidation of aqueous phenol solutions by hydrogen peroxide exhibited that the Cr-containing mixed oxide achieved the highest conversion of phenol owing to the presence of more amount of composite oxide phase containing active copper centers, while the aluminum-containing one could significantly enhance deep oxidation of phenol into smaller molecules owing to the presence of more surface oxygen species.     

Reactivity of monolayer V2O5 films on TiO2(1 1 0) produced via the oxidation of vapor-deposited vanadium

The growth, and reactivity of monolayer V₂O₅ films supported on TiO₂(1 1 0) produced via the oxidation of vapor-deposited vanadium were studied using X-ray photoelectron spectroscopy and temperature programmed desorption (TPD). Oxidation of vapor-deposited vanadium in 10⁻⁷ Torr of O₂ at 600 K produced vanadia films that contained primarily V³⁺, while oxidation in 10⁻³ Torr at 400 K produced films that contained primarily V⁵⁺. The reactivity of the supported vanadia layers for the oxidation of methanol to formaldehyde was studied using TPD. The activity for this reaction was found to be a function of the oxidation state of the vanadium cations in the film.     

In situ XPS study of Pd(1 1 1) oxidation at elevated pressure, Part 2: Palladium oxidation in the 10 mbar range

The oxidation of the Pd(1 1 1) surface was studied by in situ XPS during heating and cooling in 0.4 mbar O₂. The in situ XPS data were complemented by ex situ TPD results. A number of oxygen species and oxidation states of palladium were observed in situ and ex situ. At 430 K, the Pd(1 1 1) surface was covered by a 2D oxide and by a supersaturated O_ads layer. The supersaturated O_ads layer transforms into the Pd₅O₄ phase upon heating and disappears completely at approximately 470 K. Simultaneously, small clusters of PdO, PdO seeds, are formed. Above 655 K, the bulk PdO phase appears and this phase decomposes completely at 815 K. Decomposition of the bulk oxide is followed by oxygen dissolution in the near-surface region and in the bulk. The oxygen species dissolved in the bulk is more favoured at high temperatures because oxygen cannot accumulate in the near-surface region and diffusion shifts the equilibrium towards the bulk species. The saturation of the bulk “reservoir” with oxygen leads to increasing the uptake of the near-surface region species. Surprisingly, the bulk PdO phase does not form during cooling in 0.4 mbar O₂, but the Pd₅O₄ phase appears below 745 K. This is proposed to be due to a kinetic limitation of PdO formation because at high temperature the rate of PdO seed formation is compatible with the rate of decomposition.     

Structural investigation of the c(√2 × 5√2)R45° surface alloy formed by Ti deposition on Cu(0 0 1)

The alloying process of Ti deposited on Cu(0 0 1) was studied by means of XPS, LEIS, XPD and LEED intensity analysis. With the sample held at 570 K, a linear decrease of the Cu LEIS signal as a function of the amount of Ti deposited is observed in the early stages of deposition until a constant value is reached. At the onset of the plateau a c(√2 × 5√2)R45° LEED pattern starts to be visible. XPD and LEED intensity measurements were performed for the c(√2 × 5√2)R45° phase prepared depositing ca. 1.5 monolayer of Ti. The angle-scanned XPD curves measured for the phase c(√2 × 5√2)R45° reveal that Ti atoms substitute Cu atoms in the fcc lattice of the substrate. The polar XPD curves show that at least the first four layers of the substrate are involved in the alloying process. We found that the (3 1 0) plane of the Cu₄Ti alloy (D1_a type-structure) fits, without significant contraction or expansion of the lattice parameters, the c(√2 × 5√2)R45° structure. The intensity versus energy curves of the diffracted beams were calculated on the basis of this structural model using the tensor LEED method. The results of the LEED intensity analysis provide a further evidence of the formation of a slab of Cu₄Ti(3 1 0) layers.     

Formation of 10-30 nm SiO2/Si structure with a uniform thickness at ∼120 °C by nitric acid oxidation method

Silicon dioxide (SiO₂) layers with a thickness more than 10 nm can be formed at ∼120 °C by direct Si oxidation with nitric acid (HNO₃). Si is initially immersed in 40 wt.% HNO₃ at the boiling temperature of 108 °C, which forms a ∼1 nm SiO₂ layer, and the immersion is continued after reaching the azeotropic point (i.e., 68 wt.% HNO₃ at 121 °C), resulting in an increase in the SiO₂ thickness. The nitric acid oxidation rates are the same for (1 1 1) and (1 0 0) orientations, and n-type and p-type Si wafers. The oxidation rate is constant at least up to 15 nm SiO₂ thickness (i.e., 1.5 nm/h for single crystalline Si and 3.4 nm/h for polycrystalline Si (poly-Si)), indicating that the interfacial reaction is the rate-determining step. SiO₂ layers with a uniform thickness are formed even on a rough surface of poly-Si thin film.     

Molecularly resolved studies of the role of basicity in the reaction of amines with oxygen at a Cu(1 1 0) surface

The role of basicity in the surface reactions of amines has been investigated in an STM/XPS study of the oxidation of methylamine, ethylamine and 2,2,2-trifluoroethylamine at a Cu(1 1 0) surface. Methylamine and ethylamine are strongly basic molecules and for sub monolayer concentrations of oxygen form an amine/oxygen complex characterised by a (3 × 1) structure. The complex rapidly decomposes at room temperature to form water and an imide which desorbs via β-elimination. In contrast, 2,2,2-trifluoroethylamine has a relatively low basicity and its reactions with surface oxygen do not involve a stable intermediate.     

In situ X-ray diffraction study of germanium at pressures up to 11 GPa and temperatures up to 950 K

In situ X-ray diffraction measurements on germanium were conducted in the pressure range of 5-11 GPa and temperatures up to 950 K. Using our data a better defined P-T diagram for germanium is presented. The coordinates of the triple point between Ge_I-Ge_II-Ge_L have been determined to a better degree of precision. The onsets of the Ge_I-Ge_II transition were found both under hydrostatic and non-hydrostatic conditions. Anisotropy of thermal expansion coefficient for the Ge_II is characterized from the c/a ratios in the temperature interval 473-823 K. Phases Ge_III and Ge_IV are shown to be metastable forms of germanium.     

In situ XPS study of Pd(1 1 1) oxidation. Part 1: 2D oxide formation in 10 mbar O2

The oxidation of the Pd(1 1 1) surface was studied by in situ XPS during heating and cooling in 3 × 10⁻³ mbar O₂. A number of adsorbed/dissolved oxygen species were identified by in situ XPS, such as the two dimensional surface oxide (Pd₅O₄), the supersaturated O_ads layer, dissolved oxygen and the R 12.2° surface structure.Exposure of the Pd(1 1 1) single crystal to 3 × 10⁻³ mbar O₂ at 425 K led to formation of the 2D oxide phase, which was in equilibrium with a supersaturated O_ads layer. The supersaturated O_ads layer was characterized by the O 1s core level peak at 530.37 eV. The 2D oxide, Pd₅O₄, was characterized by two O 1s components at 528.92 eV and 529.52 eV and by two oxygen-induced Pd 3d_5/2 components at 335.5 eV and 336.24 eV. During heating in 3 × 10⁻³ mbar O₂ the supersaturated O_ads layer disappeared whereas the fraction of the surface covered with the 2D oxide grew. The surface was completely covered with the 2D oxide between 600 K and 655 K. Depth profiling by photon energy variation confirmed the surface nature of the 2D oxide. The 2D oxide decomposed completely above 717 K. Diffusion of oxygen in the palladium bulk occurred at these temperatures. A substantial oxygen signal assigned to the dissolved species was detected even at 923 K. The dissolved oxygen was characterised by the O 1s core level peak at 528.98 eV. The “bulk” nature of the dissolved oxygen species was verified by depth profiling.During cooling in 3 × 10⁻³ mbar O₂, the oxidised Pd²⁺ species appeared at 788 K whereas the 2D oxide decomposed at 717 K during heating. The surface oxidised states exhibited an inverse hysteresis. The oxidised palladium state observed during cooling was assigned to a new oxide phase, probably the R 12.2° structure.     

Initial stages of the autocatalytic oxidation of the InAs(0 0 1)-(4 × 2)/c(8 × 2) surface by molecular oxygen

The initial stages of oxidation of the In-rich InAs(0 0 1)-(4 × 2)/c(8 × 2) surface by molecular oxygen (O₂) were studied using scanning tunneling microscopy (STM) and density functional theory (DFT). It was shown that the O₂ dissociatively chemisorbs along the rows in the [1 1 0] direction on the InAs surface either by displacing the row-edge As atoms or by inserting between In atoms on the rows. The dissociative chemisorption is consistent with being autocatalytic: there is a high tendency to form oxygen chemisorption sites which grow in length along the rows in the [1 1 0] direction at preexisting oxygen chemisorption sites. The most common site size is about 21-24 Å in length at ∼25% ML coverage, representing 2-3 unit cell lengths in the [1 1 0] direction (the length of ∼5-6 In atoms on the row). The autocatalysis was confirmed by modeling the site distribution as non-Poisson. The autocatalysis and the low sticking probability (∼10⁻⁴) of O₂ on the InAs(0 0 1)-(4 × 2)/c(8 × 2) are consistent with activated dissociative chemisorption. The results show that is it critical to protect the InAs surface from oxygen during subsequent atomic layer deposition (ALD) or molecular beam epitaxy (MBE) oxide growth since oxygen will displace As atoms.     

Electron-phonon contribution to hole linewidth of the surface state on Al(0 0 1)

We report an ab initio study of the electron-phonon interaction and its contribution to the excited hole linewidth of the surface state on Al(0 0 1). We have also evaluated the phonon-induced contribution to the linewidth of the occupied energy bands of Δ₁ symmetry in bulk Al. The calculations were carried out using a linear response approach in the plane-wave pseudopotential representation.     

The specific oxidation mechanism in the initial stages of O2 adsorption on submonolayer Ba covered W(1 1 0) surface

The initial oxidation of a polarized 0.35-ML Ba-covered W(1 1 0) surface has been investigated in detail by high-resolution photoemission spectroscopy using synchrotron radiation. Upon small exposures (?0.15 L) to O₂, both interfacial W 4f (Ba-coordinated W) and Ba 4d core levels shift simultaneously toward smaller binding energies and then fix during 0.15-0.25 L, finally disappear at 0.6 L. The concurrent negative shifts of both interfacial W 4f and Ba 4d peaks can be attributed to be a consequence of the increased occupancy of 5d states. This explanation is supported by the variations of 5d stats in valence band spectra upon the initial oxidation. Our results clearly demonstrate that charge rearrangement is the dominant effect in the surface reactivity of our oxidized surface. We also found that this charge redistribution is associated with a structural change during oxidation, which is in contrary to previous studies of alkali-metal promotion. That is, oxygen is first chemisorbed atop the polarized Ba adlayer, then incorporates beneath Ba adatoms to form a covalent Ba-O-W complex upon further dosage, and reacts strongly with the Ba overlayer to become an ionic Ba⁺²O⁻² surface dipole layer at 0.6 L.     

Acrolein coupling on reduced TiO2(1 1 0): The effect of surface oxidation and the role of subsurface defects

Reactions of acrolein, water, and oxygen with the vacuum-reduced surface of TiO₂(1 1 0) are reported in a temperature programmed reaction study of the interaction of an aldehydic pollutant with a reducible metal oxide. A total of 25% of the acrolein that binds to the surface is converted to products. Notably, carbon-carbon coupling occurs with 86% selectivity for formation of C₆ products: C₆H₈, identified as 1,3-cyclohexadiene, in a peak at 500 K and benzene immediately thereafter at 530 K. Acrolein is evolved from the surface in three peaks: a peak independent of coverage at 495 K, attributed to decomposition of an intermediate that is partly converted to C₆H₈; a coverage-dependent peak that shifts from 370 K (low coverage) to 260 K (high coverage), which is attributed to adsorption at 5-fold coordinated Ti sites; and a multilayer state at 160 K. Water and acrolein compete for 5-fold coordinated titanium sites when dosed sequentially. The addition of water also opens a new reaction pathway, leading to the hydrogenation of acrolein to form propanal. Water has no effect on the yield of 1,3-cyclohexadiene. Exposure of the surface to oxygen prior to acrolein dosing quenches the evolution of acrolein at 495 K and concurrently eliminates the coupling. From these results, we propose that reduced subsurface defects such as titanium ion interstitials play a role in the reactions observed here. The notion that subsurface defects may contribute to the reactivity of organic molecules over reducible oxide substrates may prove to be general.     

Synthesis of tin oxides SnO2–x in the entire composition range (x = 0 to 1) by ion‐beam sputter‐deposition

Ion‐beam sputter‐deposition (IBSD) was used to reactively deposit tin oxide crystalline films at oxygen fluxes of 3–15 sccm and at substrate temperatures of 100–600 °C. Analysing the samples by X‐ray diffraction and Raman spectro‐ scopy yields a map of the crystalline structures in dependence on the growth parameters. In addition to SnO₂, pure SnO films of high quality and an intermediate phase such as Sn₂O₃ or Sn₃O₄ can be reproducibly obtained. Thus, IBSD is, to our knowledge, the only thin‐film deposition technique verified yet to reliably produce samples in the entire composition range of tin oxides. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)