Anisotropic behaviour of the magnetoresistance in single crystalline iron films

Magnetoresistive properties of single crystalline Fe(0 0 1) films with thickness in the range 5–100 nm are reported. The films possess low coercive fields (∼100 A/m) but a weak irreversible behaviour of the magnetization remains to fields of the order of the anisotropy field. The anisotropic behaviour of the magnetoresistance is investigated as a function of temperature and film thickness. A reversal in sign of the anisotropic magnetoresistance from negative to positive values is found at low temperatures on decreasing the film thickness from 100 to 5 nm, or by increasing the temperature from 10 to 300 K of a sufficiently thick film. The reversal in sign is associated with a crossover from Lorentz force (ordinary) to spin–orbit (extraordinary) dominated scattering processes governing the anisotropic magnetoresistance as the length scale of the electron mean free path, λ, decreases.     

Initial stages of Bi/Ge(111) interface formation: A detailed STM study

We present a detailed scanning tunneling microscopy investigation of ultra-thin Bi films on Ge(111)-c(2 × 8) in the range up to 1.5 ML. During growth at 300 K, the second/third atomic layer of Bi already starts to nucleate before the completion of the first/second layer correspondingly. Laterally isolated first layer Bi atoms, clusters and islands posses no electronic states in the range ~ 0.5 eV above the Fermi level of the substrate. In contrast, metallic electronic properties are found for continuous films when Bi coverage nears 1 ML. Annealing the as-deposited Bi films at 450 K causes lateral redistribution of Bi due to surface diffusion: coarsening of two-dimensional Bi islands with no long range order in the adsorbate layer is observed up to 1 ML; long range ordered (√3 × √3)-Bi/Ge(111) interface plus three-dimensional Bi clusters are obtained for coverages in excess of 1 ML.     

Magnetic volcanos in gadolinium Langmuir–Blodgett films

Magnetic, structural and electronic properties of Langmuir–Blodgett films with incorporated Gd³⁺ ions has been detected using a scanning DC SQUID microscope, scanning electron microscope and X-ray diffraction. The magnetic images of 28 and 50 layer thick films at 77 K have been obtained after in-plane and out-of-plane pre-magnetization in a field of 1.4 T at 300 K. Randomly placed “magnetic volcanos” with a remanent magnetic moment of the order of 10⁻¹³ A m² was observed. A decay of the remanent magnetization with a characteristic time of about 120 h was observed. It is suggested that the magnetic order is relatively long ranged, and that topological defects (vortices) lead to the observed out-of-plane field lines, and are responsible for the magnetic volcanos. Finally, it is hypothesized that a similar topology of field lines is responsible for superconductivity as observed in ceramic high-T_C superconductors.     

The growth and field evaporation of Er and deuterated Er films

The morphological structure of clean and deuterated Er films deposited on W substrates and their removal by field evaporation have been investigated as part of a program directed toward the development of deuterium ion sources for neutron generators. Annealed Er films up to ~ 20 monolayers in thickness deposited on W < 110 > substrates appear pseudomorphic. Thicker annealed films form a hexagonal close-packed < 0001 > orientated over-layer with the Pitsch–Schrader orientation relation. The pseudomorphic and hexagonal close-packed character of the films is retained up to the last atomic layer that forms the film-substrate interface. Deuterated Er films appear polycrystalline. At 77 K in Ar, annealed Er films field evaporate at 2.5 V/Å primarily as Er^2 + and deuterated Er films evaporate at ~ 2.4 V/Å primarily as ErD_x^2 +. Field evaporation of both clean and deuterated Er films shows signs of space charge induced field lowering when film thicknesses exceeding ~ 10 layers were field evaporated using 20 ns duration voltage pulses.     

Chemical bath deposition of SnO2 and Cd2SnO4 thin films

A new approach of chemical bath deposition (CBD) of SnO₂ thin films is reported. Films with a 0.2 μm thickness are obtained using the multi-dip deposition approach with a deposition time as little as 8–10 min for each dip. The possibility of fabricating a transparent conducting oxide layer of Cd₂SnO₄ thin films using CBD is investigated through successive layer deposition of CBD-SnO₂ and CBD-CdO films, followed by annealing at different temperatures. High quality films with transmittance exceeding 80% in the visible region are obtained. Annealed CBD-SnO₂ films are orthorhombic, highly stoichiometric, strongly adhesive, and transparent with an optical band gap of ～4.42 eV. Cd₂SnO₄ films with a band gap as high as 3.08 eV; a carrier density as high as 1.7 × 10²⁰ cm^?3; and a resistivity as low as 1.01 × 10^?2 Ω cm are achieved.     

Superparamagnetic properties of C60Co3 complexes

Preparation of fullerites containing cobalt and analyses of reactions based on semiempirical quantum calculations are described. The magnetic properties of thermally treated C₆₀Co₃ samples: Curie constant (C≈3500 emu K/mol Oe) temperature and field dependencies of magnetization and nonequilibrium effects of magnetization are interpreted in terms of superparamagnetic blocking model of the compound.     

Magnetic properties and structures of Fe/MgF2 multilayered films

Multilayers composed of Fe and MgF₂ with layer thicknesses between 9 Å and 100 Å and of 30 Å, respectively, were prepared with an ultrahigh-vacuum deposition technique. Medium-angle X-ray data show that the Fe layers in the BCC phase have considerable (1 1 0) texture. Periodicity due to multilayered structures was confirmed by a small-angle X-ray diffraction study and cross-section transmission electron microscope for films with Fe layer thicknesses >45 Å. In an Fe/MgF₂(9 Å/30 Å) sample, an island structure for the Fe layers was suggested by the existence of superparamagnetism in a film. At 4.2 K, enhancements of both magnetization and hyperfine field were observed in films having Fe layers thinner than 40 Å. The maxima in the magnetization (233 emu/g of Fe) and in the average hyperfine field (390 kOe) at 4.2 K were found in an Fe/MgF₂(9 Å/30 Å) film and were approximately 105% and 115% that of the bulk α-Fe, respectively. The thickness dependence suggests a 12% enhancement in the magnetic moment of interface Fe atoms. No exchange bias was found in the films, implying that antiferromagnetic fluorides are not formed at the interface, which is different from the case of Fe/LiF and Fe/CaF₂ multilayers.     

Surface and interface effects on structural transformation of vapor-deposited ethylbenzene films

We have investigated how the structures of vapor-deposited glassy films change with increasing temperature by using time-of-flight secondary ion mass spectrometry and ion scattering spectroscopy. It is found that intermixing of the topmost layer of an ethylbenzene film occur at temperature (~ 80 K) considerably lower than the glass transition temperature (T_g = 118 K) when the film is deposited at 20 K. This phenomenon can be interpreted as the occurrence of a two-dimensional liquid that diffuses into pores of the film, which is evidenced from comparison with surface diffusivity measurements using a porous silicon layer. For nonporous films deposited at higher temperatures, the molecules intermix gradually prior to the abrupt film morphology change at T_g. This phenomenon can be interpreted as decoupling between translational diffusivity and viscosity in the bulk. The film thickness has no significant effects on the evolution of supercooled liquid at T_g except for the monolayer film, whereas crystallization is quenched for the films thinner than 8 monolayers. The roles of the 2D liquid on the surface and an immobilized layer formed at the interface are discussed in finite-size effects on the glass-liquid transition and crystallization.     

High c-axis preferred orientation ZnO thin films prepared by oxidation of metallic zinc

Thin films of zinc oxide were grown on glass substrates by thermal oxidation. The metallic zinc films were thermally oxidized at different temperatures ranging from 300 to 600 °C to yield ZnO thin films. The structural property of the thin films was characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The X-ray diffraction measurements showed that the films oxidized at 300 °C were not oxidized entirely, and the films deposited at 600 °C had better crystalline quality than the rest. When the oxidation temperature increased above 400 °C, the films exhibited preferred orientation along (002) and high transmittance ranging from 85% to 98% in vis–near-infrared band. Meanwhile, the films showed a UV emission at about 377 nm and green emission. With the increasing of oxidation temperature, the intensity of green emission peak was enhanced, and then decreased, disappearing at 600 °C, and the case of UV emission increased. Furthermore, a strong green emission was observed in the film sintered in pure oxygen atmosphere.     

Structural origin of perpendicular magnetic anisotropy in Ni–W thin films

The magnetic properties and microstructure of electrodeposited Ni–W thin films (0–11.7 at% W in composition) were studied. The film structures were divided into three regions: an FCC nanocrystalline phase (0–2 at% W), a transition region from FCC nanocrystalline to amorphous phase (2–7 at% W), and an amorphous phase (>7 at% W). In the transition region, (4–5 at% W) films with perpendicular magnetic anisotropy (PMA) were found. The saturation magnetization, magnetic anisotropy field, perpendicular magnetic anisotropy and perpendicular coercivity for a typical Ni–W film (4.5 at% W) were 420 kA/m, 451 kA/m, 230 kJ/m and 113 kA/m, respectively. The microstructure of Ni–W films with PMA is composed of isolated columnar crystalline grains (27–36 nm) with the FCC phase surrounded by the Ni–W amorphous phase. The appearance of the interface between the magnetic core of Ni crystalline grains and the Ni–W non-magnetic boundary layer seems to be the driving mechanism for the appearance of PMA. The origin of PMA in Ni–W films is mainly attributed to the magnetoelastic anisotropy associated with in-plane internal stress and positive magnetostriction. The secondary source of PMA is believed to be the magnetocrystalline anisotropy of 〈1 1 1〉 columnar grains and its shape magnetic anisotropy. It is concluded that Ni–W electrodeposited films (4–5 at% W) may be applicable for perpendicular magnetic recording media.     

Influence of heat treatment on field emission characteristics of boron nitride thin films

Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 × 10⁻⁴ Pa and the temperature of 800 and 1000 °C, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/μm and the emission current of 80 μA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 °C and disappeared at temperature of 1000 °C.     

An all-ZnO microbolometer for infrared imaging

Microbolometers are extensively used for uncooled infrared imaging applications. These imaging units generally employ vanadium oxide or amorphous silicon as the active layer and silicon nitride as the absorber layer. However, using different materials for active and absorber layers increases the fabrication and integration complexity of the pixel structure. In order to reduce fabrication steps and therefore increase the yield and reduce the cost of the imaging arrays, a single layer can be employed both as the absorber and the active material. In this paper, we propose an all-ZnO microbolometer, where atomic layer deposition grown zinc oxide is employed both as the absorber and the active material. Optical constants of ZnO are measured and fed into finite-difference-time-domain simulations where absorption performances of microbolometers with different gap size and ZnO film thicknesses are extracted. Using the results of these optical simulations, thermal simulations are conducted using finite-element-method in order to extract the noise equivalent temperature difference (NETD) and thermal time constant values of several bolometer structures with different gap sizes, arm and film thicknesses. It is shown that the maximum performance of 171 mK can be achieved with a body thickness of 1.1 μm and arm thickness of 50 nm, while the fastest response with a time constant of 0.32 ms can be achieved with a ZnO thickness of 150 nm both in arms and body.     

Influence of water on the surface structure of 1-hexyl-3-methylimidazolium chloride

The molecular surface structure of an ionic liquid (IL) with and without the presence of water was studied with the surface sensitive technique neutral impact collision ion scattering spectroscopy (NICISS). The IL chosen is 1-hexyl-3-methylimidazolium chloride, which is known to be hydrophilic. Binary mixtures were investigated within the water mole fraction range 0.43 ≤ χ_water ≤ 0.71 at 283 K. During approximately 3 h exposition time in vacuum, we have observed a very low water loss rate from sample. The NICISS measurements suggest that admixture of water to [HMIm]Cl leads to a layered surface structure. Three layers were identified (layer 1 — cations, layer 2 — cations and water, layer 3 — cations, water, and anions). While the first layer is unaffected by water, the thickness of the second layer depends on the water concentration. The thickness of layer 2 is relatively constant for water concentrations χ_water ≤ 0.61, but increases for water contents χ_water ≥ 0.68. The concentration range 0.61 ≤ χ_water ≤ 0.68 seems to play a key role in water network formation.     

Role of heat treatment on structural and optical properties of thermally evaporated Ga10Se81Pb9 chalcogenide thin films

Amorphous chalcogenides, based on Se, have become materials of commercial importance and were widely used for optical storage media. The present work deals with the structural and optical properties of Ga₁₀Se₈₁Pb₉ ternary chalcogenide glass prepared by melt quenching technique. The glass transition, crystallization and melting temperatures of the synthesized glass were measured by non-isothermal DSC measurements at a constant heating rate of 30 K/min. Thin films of thickness 4000 Å were prepared by thermal evaporation techniques on glass/Si (1 0 0) wafer substrate. These thin films were thermally annealed for two hours at three different annealing temperatures of 345, 360 and 375 K, which were in between the glass transition and crystallization temperatures of the Ga₁₀Se₈₁Pb₉ glass. The structural, morphological and optical properties of as-prepared and annealed thin films were studied. Analysis of the optical absorption data showed that the rules of the non-direct transitions predominate. It was also found that the optical band gap decreases while the absorption coefficient, refractive index and extinction coefficient increase with increasing the annealing temperature. Due to the higher values of absorption coefficient and annealing dependence of the optical band gap and optical constants, the investigated material could be used for optical storage.     

Hall anomaly in CNT-doped Y-123 high temperature superconductor

In order to study the Hall effect in pure and CNT-doped Y-123 polycrystalline samples, we have measured the longitudinal and transverse voltages at different magnetic field (0 ? 9 T) in the normal and vortex states. In the normal state, the Hall coefficient is positive and decreases with increasing temperature, and can be approximately fitted to R_H = a + bT^?1. We have found a sign reversal in the pure sample for the magnetic field of about 3 T, and double sign reversal of the Hall coefficient in the 0.7 wt% CNT-doped sample at about 3 and 5 T. The Hall resistivity in our samples depends on the pinning.     

Dependence of microstructure and magnetic properties of FePt films on Cr90Ru10 underlayers

The effect of the thickness of Cr₉₀Ru₁₀ underlayers on the microstructure and magnetic properties of FePt films has been studied. Experimental results showed that the FePt films grown on the Cr₉₀Ru₁₀ underlayers exhibited a (0 0 1) preferred orientation with out-of-plane magnetic anisotropy. The degree of the FePt(0 0 1) preferred orientation was closely related to that of the Cr(0 0 2) preferred orientation. The degree of ordering of the FePt films increased with the thickness of the Cr₉₀Ru₁₀ underlayers. The angular dependence of the coercivity curves suggested that an incoherent curling rotational mode be a dominant magnetic reversal mechanism in the FePt films at various Cr₉₀Ru₁₀ underlayer thicknesses.     

Exchange bias effects in ferromagnetic wires

We have investigated the exchange bias effect in micron-sized ferromagnetic wires made from Co and Ni₈₀Fe₂₀ films. The wires were fabricated using optical lithography, metallization by sputtering and lift-off technique. Magnetotransport measurements were performed at temperatures ranging from 3 to 300 K. We observed marked changes in the magnetoresistance (MR) properties as the temperature is varied. At 300 K, the field at which the sharp peak occurs corresponding to the magnetization reversal of the Co wires is 167 Oe and is symmetrical about the origin. As the temperature was decreased to 3 K, we observed a shift in the peak positions of the MR characteristics for both the forward and reverse field sweeps corresponding to a loop shift of 582 Oe in the field axis. The asymmetric shift in the MR loops at low temperatures clearly indicates the exchange bias between ferromagnetic (Co) and antiferromagnetic parts (Co-oxide at the surfaces) from natural oxidation. Ni₈₀Fe₂₀ wires of the same geometry showed similar effect with a low exchange bias field. The onset of exchange biasing effect is found to be 70 and 15 K for the Co and Ni₈₀Fe₂₀ wires, respectively. A striking effect is the existence of exchange biasing effect from the sidewalls of the wires even when the wires were capped with Au film.     

High quality nitrogen-doped zinc oxide thin films grown on ITO by sol–gel method

Highly transparent N-doped ZnO thin films were deposited on ITO coated corning glass substrate by sol–gel method. Ammonium nitrate was used as a dopant source of N with varying the doping concentration 0, 0.5, 1.0, 2.0 and 3.0 at%. The DSC analysis of prepared NZO sols is observed a phase transition at 150 °C. X-ray diffraction pattern showed the preferred (002) peak of ZnO, which was deteriorated with increased N concentrations. The transmittance of NZO thin films was observed to be ~88%. The bandgap of NZO thin films increased from 3.28 to 3.70 eV with increased N concentration from 0 to 3 at%. The maximum carrier concentration 8.36×10¹⁷ cm⁻³ and minimum resistivity 1.64 Ω cm was observed for 3 at% N doped ZnO thin films deposited on glass substrate. These highly transparent ZnO thin films can be used as a window layer in solar cells and optoelectronic devices.     

Structural and magnetic properties of HCP-CoCrPt–SiO2 granular media

Granular HCP-(CoCrPt)_100−x(SiO₂)_x thin films with Cr underlayers have been fabricated by sputtering multilayers followed by post-deposition annealing. Magnetic and structural properties of the films for potential applications in magnetic recording media have been investigated in detail. In as-deposited films coercivities exceeding 2.5 kOe have been obtained with SiO₂ varying from 8 to 16 vol%; high coercivity of 5.6 kOe and anisotropy of 4.6×10⁶ erg/cm³ have been achieved at low M_rt value (about 0.4 memu/cm²) in the post-annealed films. VSM measurements showed that the magnetic moment lies well in the film plane under proper preparation conditions. Grain isolation in the magnetic layer was improved by segregating SiO₂ into grain boundaries and further enhanced by post-deposition annealing. The rapid increase of the coercivity upon annealing is most likely due to the significant decrease in intergranular exchange coupling, as shown by the δM measurement in which the peak value of δM curves changed from a positive value to a negative value upon annealing. Magnetic reversal properties of the films have also been systematically studied. These results show that the HCP-CoCrPt–SiO₂ granular film is a promising candidate for ultra-high-density recording media up to 100 Gbit/in² or beyond because of its low Pt content and desirable properties.     

Electronic properties of the polycrystalline tin dioxide interface with conjugated organic layers

The results on the electronic structure of the unoccupied electronic states of the polycrystalline SnO₂ in the energy range from 5 eV to 25 eV above the Fermi level are presented. The modification of the electronic structure and of the surface potential upon deposition of the ultrathin films of copper phthalocyanine (CuPc) and of perylene tetracarboxylic acid dianhydride (PTCDA) film onto the SnO₂ surface were studied using the very low energy electron diffraction (VLEED) method and the total current spectroscopy (TCS) measurement scheme. A substantial attenuation of the TCS signal coming from the SnO₂ surface was observed upon formation of a 1.5–2 nm thick organic deposit layer while no new spectral features from the deposit were distinguishable. It was observed that the electronic structure typical for the organic films was formed within the organic deposit thickness range from 2 nm to 7 nm. The interfacial charge transfer was characterized by the formation of the polarization layer up to 5 nm thick in the organic films. The PTCDA deposition on SnO₂ was accompanied by the negative charge transfer onto the organic layer and to the 0.65 eV increase the surface work function. At the CuPc/SnO₂ interface, the negative charge was transferred to the SnO₂ surface and the overall surface work function decreased by 0.15 eV.