Correlation between the exchange bias and the degree of ordering of antiferromagnetic layer in PtMn/Co–Fe bilayers

Correlation between the unidirectional anisotropy constant, J_K, and the degree of ordering of PtMn layer was investigated for Pt₅₅Mn₄₅/Co₉₀Fe₁₀ bilayer, as a function of the annealing time and the PtMn layer thickness, d_AF. As a result, we found the linear relations between J_K and the degree of ordering, f_FCT·S, in the cases of the bilayers with d_AF=5–50 nm. From the extrapolation of the linear relations to f_FCT·S=1, meaning the perfect ordering of PtMn layer, we obtained the attainable value of J_K and the intrinsic critical thickness of the PtMn layer to be 0.26 erg/cm² and 6 nm, respectively.     

PtMn层厚度对NiFe/PtMn双层膜交换偏置形成及热稳定性的影响

采用磁控溅射的方法制备了一组以(Ni_0.81Fe_0.19)_1-xCr_x作为缓冲层的NiFe/PtMn双层膜样品，研究了NiFe/PtMn双层膜的形成过程和热稳定性.实验表明，Cr成分的不同会引起NiFe/PtMn双层膜中PtMn层晶粒尺寸的不同，使NiFe/PtMn双层膜的交换偏置场与PtMn层厚度之间呈现不同的变化关系.热稳定性实验表明，PtMn晶粒尺寸较大的样品，出现交换偏置现象所需要的临界厚度较小，热稳定性好，这与Mauri的理论模型一致. 关键词： NiFe/PtMn双层膜 交换偏置场 热稳定性     

Lorentz microscopy investigation of the free layer reversal in CoFe and Co top spin-valves

The magnetisation reversal of the free layer of two different spin-valve (SV) films with crossed anisotropy was studied using Lorentz microscopy in a modified transmission electron microscope. Both SVs were of similar construction, the principal difference being the replacement of Co by CoFe in the layers surrounding the non-magnetic spacer. Marked differences in the reversal mode were apparent. For CoFe SVs reversal was usually by rotation and experimental results were in good agreement with those predicted by a modified Stoner–Wohlfarth model. By contrast, reversal in Co SVs tended to involve complex domain processes with a high degree of irreversibility. The differences are attributed to the much higher magnetostriction constant of Co which gives rise to substantial local property variation.     

(Ni0.81Fe0.19)1－xCrx作为种子层对NiFe/PtMn双层膜交换偏置的影响

将NiFe/PtMn双层膜生长在(Ni_0.81Fe_0.19)_1-xCr_x种子层材料上，通过改变种子层中Cr的原子含量，系统的研究了NiFe/PtMn双层膜中PtMn晶粒尺寸和织构对交换偏置的影响.对退火270℃，5h后的NiFe/PtMn双层膜磁性的研究表明,PtMn织构强弱对交换偏置场的影响不明显，而PtMn的晶粒尺寸是影响交换偏置场的主要因素，PtMn颗粒的相干长度在11.3nm左右时得到了较大的交换偏置场. 关键词： NiFe/PtMn双层膜 交换偏置场     

Magnetization reversal in exchange biased Co/CoO patterns

The influence of patterning on exchange bias has been investigated using arrays of micron-sized Co/CoO dots with different lateral confinement and length-to-width ratio. The patterned samples show higher coercive and exchange bias fields than a continuous Co/CoO bilayer. As in unpatterned film, magnetization reversal mechanisms on opposite sides of the hysteresis loops of the microstructured samples are different. However, with the increase of lateral confinement and shape anisotropy of the dots, the asymmetry in the magnetization reversal starts to differ from that observed in continuous Co/CoO films.     

Magnetization reversal dynamics in Au/Co/Au(111) ultrathin films: Effect of roughness of the buffer layer

We present a study of the magnetization reversal dynamics in ultrathin Au/Co/Au films with perpendicular magnetic anisotropy, for a Co thickness of 0.5, 0.7 and 1 nm. In these films, the magnetization reversal is dominated by domain nucleation for t_Co=0.5, 0.7 nm and by domain wall propagation for t_Co=1 nm. The prevalence of domain nucleation for the thickness range 0.5-0.7 nm is different from results reported in the literature, for the same system and for the same thickness range, where the magnetization reversal took place mainly by domain wall motion. We attribute this difference to the effect of roughness of the Au buffer layer on the morphology of the magnetic layer.     

斯托纳粒子的磁矩翻转

文章根据朗道-利夫席茨-吉尔伯特（Landau-Lifshitz-Gilbert）理论,介绍了斯托纳（Stoner）粒子（单个磁畴的磁性颗粒）磁矩翻转的相关理论.其中指出了有关磁矩翻转的斯托纳-沃尔法特（Wohlfarth）极限（SW极限）只有在阻尼系数无穷大时才是真正准确的.在此极限下,磁矩是沿着能量下降最快的路径翻转.最小的翻转磁场出现在当系统能量曲面中只有一个稳定的不动点的情形.文中还指出了对于一个给定的各向异性的磁体,阻尼系数存在一个临界值,超过它时,最小翻转磁场与SW极限是相同的.低于此临界值,最小翻转磁场可以小于SW极限.对于在有阻尼情况下的弹道式磁矩翻转,文中指出,施加的磁场方向应该处在一特定的方向内.这个方向窗口的宽度与阻尼系数和磁内能有关.对于一给定的磁内能,窗口的上下边界随着阻尼系数的增加而增加,窗口的宽度则随着阻尼系数的增加而呈振荡的变化.在没有阻尼和阻尼无穷大的极限下,窗口宽度变为零。     

斯托纳粒子的磁矩翻转

文章根据朗道-利夫席茨-吉尔伯特(Landau-Lifshitz-Gilbert)理论, 介绍了斯托纳(Stoner)粒子(单个磁畴的磁性颗粒)磁矩翻转的相关理论. 其中指出了有关磁矩翻转的斯托纳-沃尔法特(Wohlfarth)极限(SW极限)只有在阻尼系数无穷大时才是真正准确的. 在此极限下, 磁矩是沿着能量下降最快的路径翻转. 最小的翻转磁场出现在当系统能量曲面中只有一个稳定的不动点的情形. 文中还指出了对于一个给定的各向异性的磁体, 阻尼系数存在一个临界值, 超过它时, 最小翻转磁场与SW极限是相同的. 低于此临界值,最小翻转磁场可以小于SW极限. 对于在有阻尼情况下的弹道式磁矩翻转, 文中指出,施加的磁场方向应该处在一特定的方向内. 这个方向窗口的宽度与阻尼系数和磁内能有关. 对于一给定的磁内能, 窗口的上下边界随着阻尼系数的增加而增加, 窗口的宽度则随着阻尼系数的增加而呈振荡的变化. 在没有阻尼和阻尼无穷大的极限下, 窗口宽度变为零.     

Magnetization reversal in perpendicular exchange-biased multilayers

Co/Pt multilayers with perpendicular magnetic anisotropy exhibit an exchange bias when covered with an IrMn layer. The exchange bias field, which is about 7 mT for 3 Co/Pt bilayer repetitions and a Co layer thickness of 5 Å, can be increased up to 16.5 mT by the insertion of a thin Pt layer at the Co/IrMn interface. The interfacial magnetic anisotropy of the Co/IrMn interface (KSCo/IrMn =-0.09 mJ/m2) favours in-plane magnetization and tends to tilt the Co spins away from the film normal. Dynamical measurements of the magnetization reversal process reveal that both thermally activated spin reversal in the IrMn layer and domain wall nucleation in the Co/Pt multilayer influence the interfacial spin structure and therefore the strength of the perpendicular exchange bias field.     

垂直自由层倾斜极化层自旋阀结构中的磁矩翻转和进动

在理论上研究了垂直自由层和倾斜极化层自旋阀结构中自旋转移矩驱动的磁矩翻转和进动.通过线性展开包括自旋转移矩项的Landau-Lifshitz-Gilbert方程并使用稳定性分析方法,得到了包括准平行稳定态、准反平行稳定态、伸出膜面进动态以及双稳态的磁性状态相图.发现通过调节电流密度和外磁场的大小可以实现磁矩从稳定态到进动态之间的转化以及在两个稳定态之间的翻转.翻转电流随外磁场的增加而增加,并且受自旋极化方向的影响.当自旋极化方向和自由层易磁化轴方向平行时,翻转电流最小;当自旋极化方向和自由层易磁化轴方向垂直时,翻转电流最大.通过数值求解微分方程,给出了不同磁性状态磁矩随时间的演化轨迹并验证了相图的正确性.     

Magnetization reversal in granular thin films

The paper discusses the physics of magnetization reversal in granular magnetic films. It gives an overview of the key physical properties that determine the collective and macroscopically observable magnetization reversal behavior. In particular, the multitude of observable hysteresis loops is reduced to three key physical quantities, namely the single grain switching field distribution D(h_s), the inter-granular exchange coupling constant J_ex, and the magnetostatic interaction constant J_ms. By varying the relative influence of these quantities, many different shapes of hysteresis loops can occur, which is documented by experimental examples. The regime of partially and strongly correlated reversal is discussed in detail, and minor loop measurements are presented that show scaling behavior for strongly correlated magnetization reversal in the vicinity of hysteresis loop criticality.     

Effects of Cu dilution in IrMn on the exchange bias of CoFe/IrMn bilayers

The effect of nonmagnetic dilution in metallic antiferromagnets (AFMs) on the exchange bias (EB) has been investigated from a structural, magnetic, and Monte Carlo simulation point of view in bilayers of CoFe/(IrMn)1-xCux. Dilution by Cu atoms throughout the volume of the AFM IrMn gives rise to an enhanced EB field (HEB) for 5 K相似文献   

反铁磁Cr插入层对CoFe/MgO/CoFe磁性隧道结的隧穿磁电阻的影响

利用基于密度泛函理论和非平衡态格林函数的第一性原理计算研究了CoFe/MgO/CoFe磁性隧道结的隧穿磁电阻效应。给出了该隧道结隧穿磁电阻与偏压的依赖关系,并计算了平行结构与反平行结构相应的I-V特性曲线和传输谱。通过在一侧电极与势垒层之间插入反铁磁金属Cr层,观察到了隧穿磁电阻、电导随插入层Cr层数增加发生衰减和2个原子层周期的振荡现象,这主要是由于Cr拥有反铁磁结构,在Cr/MgO界面形成了与Cr磁矩取向相关的界面散射。     

反铁磁Cr插入层对CoFe/MgO/CoFe磁性隧道结的隧穿磁电阻的影响

利用基于密度泛函理论和非平衡态格林函数的第一性原理计算研究了CoFe/MgO/CoFe磁性隧道结的隧穿磁电阻效应。给出了该隧道结隧穿磁电阻与偏压的依赖关系,并计算了平行结构与反平行结构相应的I-V特性曲线和传输谱。通过在一侧电极与势垒层之间插入反铁磁金属Cr层,观察到了隧穿磁电阻、电导随插入层Cr层数增加发生衰减和2个原子层周期的振荡现象,这主要是由于Cr拥有反铁磁结构,在Cr/MgO界面形成了与Cr磁矩取向相关的界面散射。     

Influence of Ga+ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves

Ga+ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance(MR) are investigated.The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with the increase of ion dose.The width of the forward step between the free layer and the pinned layer becomes gradually smaller with the increase of ion dose whilst the recoil step tends to be narrower with ion dose increasing up to 6×10 13 ions/cm 2 and the step disappears afterwards.Two peaks in the R-H curve are found to be asymmetric.     

Magnetization reversal of individual Co nanoislands

We investigate the magnetization reversal of individual Co islands on Cu(111) in the size range of N=700 to 18,000 atoms by spin-polarized scanning tunneling microscopy at 8 K. The switching field H(sw) changes with island size in a nonmonotonic manner: it increases with island size and reaches a maximum value of 2.4 T at N=5500 atoms, and it decreases for larger islands. We extract the energy barrier for magnetization reversal as a function of island size. The maximum H(sw) corresponds to an energy barrier of 1 eV. Our results elucidate a crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation with increasing size at around 7500 atoms.     

Magnetization reversal in weakly coupled magnetic patterns

Ion irradiation is an original process to pattern the structural and as a consequence the magnetic properties of ultra-thin films, down to the nanometer scale. Patterns of dots and tracks have been fabricated by focused Ga⁺ ion beam scanned onto a Co layer with perpendicular magnetic anisotropy. Depending on the dose, the magnetic behaviour of the nanometric irradiated lines can be tuned from the ferromagnetic with reduced coercivity to paramagnetic. The larger the fluence, the smaller is the exchange between dots or tracks. These systems enabled investigations of the competition between exchange and dipolar interactions. For arrays designed with high irradiation doses and only coupled by dipolar interactions, the magnetic relaxation proceeds by the magnetization reversal of individual dots and follows a power-law time decay. Monte Carlo simulations reproduce this time dependence.