Understanding the insulating phase in colossal magnetoresistance manganites: shortening of the Jahn-Teller long-bond across the phase diagram of La1-xCaxMnO3

The detailed evolution of the magnitude of the local Jahn-Teller (JT) distortion in La(1-x)Ca(x)MnO3 is obtained across the phase diagram for 0< or =x< or =0.5 from high-quality neutron diffraction data using the atomic pair distribution function method. A local JT distortion is observed in the insulating phase for all Ca concentrations studied. However, in contrast with earlier local structure studies, its magnitude is not constant, but decreases continuously with increasing Ca content. This observation is at odds with a simple small-polaron picture for the insulating state.     

Systematic (63)Cu NQR and (89)Y NMR study of spin dynamics in Y(1-z)Ca(z)Ba(2)Cu(3)O(y) across the superconductor-insulator boundary

We demonstrate that the spin dynamics in underdoped Y(1-z)Ca(z)Ba(2)Cu(3)O(y) for y approximately equal to 6.0 exhibit qualitatively the same behavior to underdoped La(2-x)Sr(x)CuO(4) for an equal amount of hole concentration p = z/2 = x< or =0.11. However, a spin gap appears as more holes are doped into the CuO(2) plane by increasing the oxygen concentration to y approximately equal to 6.5 for a fixed value of Ca concentration z. Our results also suggest that Ca doping causes disorder effects that enhance the low frequency spin fluctuations.     

Onset and melting of local orbital order

The onset and melting of locally staggered charge/orbital correlations is investigated within a two-orbital correlated electron model with inter-orbital and inter-site Coulomb interactions. The CE-type orbital correlation exhibits a sharp onset close to the Curie temperature and rapid thermal melting thereafter, which provides quantitative understanding of the (π/2,π/2,0) feature observed in neutron scattering experiments on La(0.7)(Ca(y)Sr(1-y))(0.3)MnO(3) single crystals. In the zig-zag AF state, the CE-type orbital correlations are found to be even more readily stabilized, but only within a narrow doping regime around x = 0.5.     

Superconductor-to-insulator transition and transport properties of underdoped YBa2Cu3O(y) crystals

The carrier-concentration-driven superconductor-to-insulator (SI) transition as well as transport properties in underdoped YBa2Cu3O(y) twinned crystals is studied. The SI transition takes place at y approximately 6.3, carrier concentration n(SI)H approximately 3x10(20) cm(-3), anisotropy rho(c)/rho(ab) approximately 10(3), and the threshold resistivity rho(SI)ab approximately 0.8 mOmega cm which corresponds to a critical sheet resistance h/4e2 approximately 6.5 kOmega per CuO2 bilayer. The evolution of a carrier, nH infiniti y - 6.2, is clearly observed in the underdoped region. The resistivity and Hall coefficient abruptly acquire strong temperature dependence at y approximately 6.5 indicating a radical change in the electronic state.     

Anomalous peak in the superconducting condensate density of cuprate high- T(c) superconductors at a unique doping state

The doping dependence of the ratio of the superconducting condensate density to the effective mass, n(o)(s)/m(*)(ab), was studied in detail by muon-spin rotation for Y(0.8)Ca(0.2)Ba(2)(Cu(1-z)Zn(z))(3)O(7-delta) and Tl(0.5-y)Pb(0.5+y)Sr(2)Ca(1-x)Y(x)Cu(2)O(7). Our data show that n(o)(s)/m(*)(ab) exhibits a peak at a unique doping state in the overdoped regime. Its position coincides with the critical doping state, where the normal state pseudogap was reported to appear and to deplete the electronic density of states. This finding implies that the pseudogap primarily arises from a change in the electronic ground state rather than from thermal fluctuations.     

The electronic and chemical structure of the a-B(3)CO(0.5):H(y)-to-metal interface from photoemission spectroscopy: implications for Schottky barrier heights

The electronic and chemical structure of the metal-to-semiconductor interface was studied by photoemission spectroscopy for evaporated Cr, Ti, Al and Cu overlayers on sputter-cleaned as-deposited and thermally treated thin films of amorphous hydrogenated boron carbide (a-B(x)C:H(y)) grown by plasma-enhanced chemical vapor deposition. The films were found to contain ～10% oxygen in the bulk and to have approximate bulk stoichiometries of a-B(3)CO(0.5):H(y). Measured work functions of 4.7/4.5?eV and valence band maxima to Fermi level energy gaps of 0.80/0.66?eV for the films (as-deposited/thermally treated) led to predicted Schottky barrier heights of 1.0/0.7?eV for Cr, 1.2/0.9?eV for Ti, 1.2/0.9?eV for Al, and 0.9/0.6?eV for Cu. The Cr interface was found to contain a thick partial metal oxide layer, dominated by the wide-bandgap semiconductor Cr(2)O(3), expected to lead to an increased Schottky barrier at the junction and the formation of a space-charge region in the a-B(3)CO(0.5):H (y) layer. Analysis of the Ti interface revealed a thick layer of metal oxide, comprising metallic TiO and Ti (2)O (3), expected to decrease the barrier height. A thinner, insulating Al(2)O(3) layer was observed at the Al-to-a-B(3)CO(0.5):H(y) interface, expected to lead to tunnel junction behavior. Finally, no metal oxides or other new chemical species were evident at the Cu-to-a-B(3)CO(0.5):H(y) interface in either the core level or valence band photoemission spectra, wherein characteristic metallic Cu features were observed at very thin overlayer coverages. These results highlight the importance of thin-film bulk oxygen content on the metal-to-semiconductor junction character as well as the use of Cu as a potential Ohmic contact material for amorphous hydrogenated boron carbide semiconductor devices such as high-efficiency direct-conversion solid-state neutron detectors.     

红色荧光粉Na_zCa_(1-x-2y-z)Bi_yMoO_4∶Eu_(x+y)~(3+)发光研究

采用高温固相法制备系列红色荧光粉NazCa1-x-2y-zBiyMoO4∶Eux3++y(y,z=0,x=0.24,0.26,0.30,0.34,0.38;x=0.30,y=0.01,0.02,0.03,0.04,0.05,0.06,0.07,z=0;x=0.30,y=0.04,z=0.38)。用X射线粉末衍射(XRD)法测试了所制样品晶相结构。采用荧光光谱仪对样品的发光性能进行了表征,结果表明:当Eu3+单掺杂量浓度x=0.30时,荧光粉(Ca0.70MoO4∶Eu03.+30)的发光强度最强;当Eu3+-Bi3+共掺杂量浓度y=0.03时,电荷迁移带(CTB)强度达到最强,而对于Eu3+特征发射峰,当共掺杂浓度y<0.03时,位于393 nm处的激发峰强度比464 nm强,共掺浓度y>0.03时,464 nm峰比393 nm峰强,共掺浓度为y=0.04时,393和464 nm处两峰位置强度都达到最强。作为电荷补尝剂的Na2CO3掺入上述荧光粉中后,荧光粉激发和发射强度明显地增强。结果表明,通过调节Bi3+/Eu3+掺杂比例可以改变位于近紫外光393 nm和蓝光区464 nm处激发光相对强度。     

Metallic normal state of Y1Ba2Cu3O(7-delta)

Flux flow was studied over an entire temperature range down to T approximately 2% of T(c) by using intense pulsed current densities to overcome flux-vortex pinning. The resistivity at high vortex velocities is proportional to B and roughly follows rho approximately rho(n)B/H(c2), with a prefactor of order unity. Contrary to some speculation, rho(n) saturates to a finite residual value as T-->0, indicating a metallic (rho-->finite) rather than insulating (rho-->infinity) normal state, and the vortex dissipation continues to be conventional as T-->0.     

Nuclear magnetic moment of the 57Cu ground state

The nuclear magnetic moment of the ground state of (57)Cu(Iota(pi) = 3/2(-), T(1/2) = 196.3 ms) has been measured to be /mu((57)Cu)/ = (2.00 +/- 0.05)mu(N) using the beta-NMR technique. Together with the known magnetic moment of the mirror partner (57)Ni, the spin expectation value was extracted as = -0.078 +/- 0.13. This is the heaviest isospin mirror T = 1/2 pair above the (40)Ca region for which both ground state magnetic moments have been determined. The discrepancy between the present results and shell-model calculations in the full f p shell giving mu((57)Cu) approximately 2.4mu(N) and approximately 0.5 implies significant shell breaking at (56)Ni with the neutron number N = 28.     

La0.67Ca0.33MnO3薄膜中的各向异性应变与电荷有序

本文采用脉冲激光沉积法在NdGaO3(001)单晶衬底上制备了一系列的La0.67Ca0.33MnO3薄膜,实验主要研究了薄膜的输运性质.La0.67Ca0.33sMnO3块材是铁磁金属基态,而La0.67Ca0.33MnO3/NdGaO3(001)薄膜由于各向异性应变的存在,可以观测到电荷有序绝缘相的出现.薄膜样品表...     

Ru掺杂La0.7Ca0.2Ba0.1Mn1-xRuxO3的磁性和输运性质

利用固相反应法制备了Ru掺杂La0.7Ca0.2Ba0.1Mn1-xRuxO3(x=0～0.06)的多晶样品,探讨了Ru掺杂对体系结构,输运性质以及磁电阻的影响.多晶X射线衍射证实所有样品均保持简单立方钙钛矿结构.通过零场冷却(ZFC)和加场冷却(FC)下的磁化曲线的测量发现随温度降低样品发生了顺磁(PM)到铁磁(FM)的相变,且样品的居里温度(Tc)随Ru掺杂发生了显著的变化,从x=0.00时的306.7K,下降到x=0.02时的294.3K,紧接着又上升到x=0.04时的302.4K.测得居里温度明显高于La0.7Ca0.2Ba0.1Mn1-xMoxO3体系,而且其磁性也大为增强.由零场和外加磁场H=1T测量得到样品的ρ～T曲线表明随温度降低样品同时发生了从绝缘体到金属的转变,绝缘体-金属转变温度低于相应的居里温度.适量的Ru掺杂降低了样品的电阻率,增强了低温时的磁电阻.     

Gate-controlled atomic quantum switch

An atomic-scale quantum conductance switch is demonstrated that allows us to open and close an electrical circuit by the controlled and reproducible reconfiguration of silver atoms within an atomic-scale junction. The only movable parts of the switch are the contacting atoms. The switch is entirely controlled by an external electrochemical voltage applied to an independent third gate electrode. Controlled switching was performed between a quantized, electrically conducting "on state" exhibiting a conductance of G(0)=2e(2)/h ( approximately 1/12.9 kOmega) or preselectable multiples of this value and an insulating "off state."     

Orbital domain state and finite size scaling in ferromagnetic insulating manganites

55Mn and 139La NMR measurements on a high quality single crystal of ferromagnetic (FM) La0.80Ca0.20MnO3 demonstrate the formation of localized Mn(3+,4+) states below 70 K, accompanied by a strong cooling-rate dependent increase of certain FM neutron Bragg peaks. (55,139)(1/T(1)) spin-lattice and (139)(1/T(2)) spin-spin relaxation rates are strongly enhanced on approaching this temperature from below, signaling a genuine phase transition at T(tr) approximately 70 K. The disappearance of the FM metallic signal by applying a weak external magnetic field, the different NMR radio-frequency enhancement of the FM metallic and insulating states, and the observed finite size scaling of T(tr) with Ca (hole) doping, as observed in powder La(1-x)CaxMnO3 samples, are suggestive of freezing into an inhomogeneous FM insulating and orbitally ordered state embodying "metallic" hole-rich walls.     

Effect of Ca doping level on the laser-induced voltages in tilted La1−x Ca x MnO3 (0.1 ≤ x ≤ 0.7) thin films

Tilted La_1?x Ca _x MnO₃ (0.1 ≤ x ≤ 0.7) thin films have been grown on vicinal cut LaAlO₃ (100) substrate by pulsed laser deposition. The laser-induced voltage effect was studied at room temperature with the KrF excimer laser using as the thermal source. The relationships between Ca doping level and voltage signal, response time and anisotropy Seebeck coefficient were established. The voltage signal and anisotropy Seebeck coefficient increase at first with increasing Ca doping level, reach a maximum at the same Ca content around x = 0.5, and then decrease. The respond time decreases with the Ca concentration increasing, and changes very little after x = 0.5. The figure of merit F _m was also the largest at this doping level, indicating a potential good performance of the photodetector devices. The variation of intrinsic structural and transport anisotropy induced by the change of Ca concentration has been proposed to account for the different LIV effects observed in LCMO thin films.     

Dynamical Properties of Photo-Induced Spin Disorder in Half-Metal Systems

We have investigated critical relaxation phenomena of photoinduced spin-disorder and transient formation of charge-ordered states in R 0.6 Sr 0.4 MnO 3 (R = La, Nd 0.5 Sm 0.5 and Sm) and La 0.7 Ca 0.3 MnO 3 thin films by means of a pump-probe method. An absorption band at ¨ 1.5 eV is induced upon photo-irradiation, which suggests that CO clusters are transiently formed in the ferromagnetic state. In addition, it is found that the observed temperature variation of the relaxation time of photoinduced spin-disorder near the transition temperature is well interpreted in terms of the dynamical scaling theory based on a three-dimensional Heisenberg model for the second-order phase transition.     

Nd0.5Ca0.5Mn1-xAlxO3 (x=0,0.03)体系中电荷有序态的超声研究

系统研究了Nd0．5Ca0．5Mn1-xAlxO3(x=0,0．03)单相多晶样品在低温下的电磁性质和超声特性．电阻和磁化率测量表明,Nd0．5Ca0.5O3体系在TCO-257 K处发生了电荷有序相变．超声声速从室温开始随着温度的降低逐渐减小,并在TCO附近达到最小,之后,随着温度的进一步降低,声速急刷增加,同时伴随着一个尖锐的超声衰减峰出现.TCO附近的超声异常表明体系中存在着强烈的电-声子相互作用,该电-声子耦合来源于Mn3 的Jahn-Teller效应．在低温下,出现了另一个超声衰减峰,它的出现归结为反铁磁相与顺磁相之间的相分离现象.随着Al在Mn位的掺入,超声声速的最低点和衰减峰向低温移动,表明体系中的电荷有序态和反铁磁相均被部分抑制,     

Evolving dark energy with w not = -1

Theories of evolving quintessence are constructed that generically lead to deviations from the w = -1 prediction of nonevolving dark energy. The small mass scale that governs evolution, m(phi) approximately = 10(-33) eV, is radiatively stable, and the "Why now?" problem is solved. These results rest on seesaw cosmology: Fundamental physics and cosmology can be broadly understood from only two mass scales, the weak scale nu and the Planck scale M. Requiring a scale of dark energy rho(DE)(1/4) governed by nu2/M and a radiatively stable evolution rate m(phi) given by nu4/M3 leads to a distinctive form for the equation of state w(z). Dark energy resides in the potential of a hidden axion field that is generated by a new QCD-like force that gets strong at the scale lambda approximately = nu2/M approximately = rho(DE)(1/4). The evolution rate is given by a second seesaw that leads to the axion mass m(phi) approximately = lambda2/f, with f approximately = M.     

Resistivity of Mixed-Phase Manganites

The resistivity rho(dc) of manganites is studied using a random resistor-network, based on phase separation between metallic and insulating domains. When percolation occurs, both as chemical composition or temperature vary, results in good agreement with experiments are obtained. Similar conclusions are reached using quantum calculations and microscopic considerations. Above the Curie temperature, it is argued that ferromagnetic clusters should exist in Mn oxides. Small magnetic fields induce large rho(dc) changes and a bad-metal state with (disconnected) insulating domains.     

Magnetic pair making and breaking effect of Ru in La0.7Sr0.3Mn0.9Ru0.1O3 and La0.5Sr0.5Co0.9Ru0.1O3

The substitutional effect of Ru on the magnetic and transport properties of double exchange ferromagnets, La_0.7Sr_0.3MnO₃ and La_0.5Sr_0.5CoO₃ has been investigated. It is found that substitution of 10% Ru at the Mn site of La_0.7Sr_0.3MnO₃ decreases the Curie temperature by 20 K than that of the parent compound. However, a large decrease in the Curie temperature, ΔT_c80 K and the system undergoes a transition from metallic state to insulating state is observed when 10% Ru is doped in La_0.5Sr_0.5CoO₃. The marginal effect of Ru in the Mn–O–Mn sublattice in comparison to the Co–O–Co sublattice could be due to the magnetic exchange interaction between Mn and Ru by virtue of the fact that Ru exhibits variable valence states, Ru⁺⁴/Ru⁺⁵. The e_g and t_2g parentage of Ru⁺⁵ is similar to Mn⁺⁴ and therefore, Ru⁺⁵ ion appears to participate in the double exchange mediated ferromagnetic (FM) interaction. On the other hand, Ruthenium (IV) ion disrupts an intermediate spin state of cobalt (Co⁺³: t_2g⁵e_g¹), forcing a double exchange FM state to anti-FM state.     

Possible quantum critical point in La(2/3)Ca(1/3)Mn(1-x)Ga x O3

We study the magnetic ground state in La(2/3)Ca(1/3)Mn(1-x)Ga x O3 manganites, where a quantum critical point (QCP) has been theoretically predicted. The metallic ferromagnetic ground state for low Ga doping breaks down for x > or = 0.11, an insulating state being established at low temperatures. Long-range ferromagnetism coexists with short-range magnetic correlations in the concentration range 0.11 < or = x < or = 0.145 while only the short-range correlations survive for x > or = 0.16. We discuss the implications of such a QCP to the physics of manganites and compare to other QCP systems.