Temperature-induced density anomaly in Te-Rich liquid germanium tellurides: p versus sp3 bonding?

The density anomaly of liquid Ge(0.15)Te(0.85) measured between 633 and 733 K is investigated with ab initio molecular dynamics calculations at four temperatures and at the corresponding experimental densities. For box sizes ranging from 56 to 112 atoms, an 8 k-points sampling of the Brillouin zone is necessary to obtain reliable results. Contrary to other Ge chalcogenides, no sp(3) hybridization of the Ge bonding is observed. As a consequence, the negative thermal expansion of the liquid is not related to a tetrahedral bonding as in the case of water or silica. We show that it results from the symmetry recovery of the local environment of Ge atoms that is distorted at low temperature by a Peierls-like mechanism acting in the liquid state in the same way as in the parent solid phases.     

Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1)

Diffusion length of Ga on the GaAs(0 0 1)-(2×4)β2 is investigated by a newly developed Monte Carlo-based computational method. The new computational method incorporates chemical potential of Ga in the vapor phase and Ga migration potential on the reconstructed surface obtained by ab initio calculations; therefore we can investigate the adsorption, diffusion and desorption kinetics of adsorbate atoms on the surface. The calculated results imply that Ga diffusion length before desorption decreases exponentially with temperature because Ga surface lifetime decreases exponentially. Furthermore, Ga diffusion length L along and [1 1 0] on the GaAs(0 0 1)-(2×4)β2 are estimated to be and L_[110]200 nm, respectively, at the incorporation–desorption transition temperature (T860 K).     

Low-energy electron energy-loss spectroscopy with Ge:GaAs (110) heterostructures

Electronic properties and chemical composition of Ge films grown by molecular beam epitaxy on GaAs (110) surfaces were studied in situ by electron energy-loss spectroscopy. The loss peaks involving core-level excitations proved that As atoms segregate at the surface of the growing film. The well known 20 eV loss peak of the clean GaAs (110) surface, being attributed to transitions from Ga(3d) to Frenkel-type excitons of dangling-bond surface states, was found to persist, slightly shifted to 19.7 eV, with the growing Ge (110) film. Since the Ga coverage amounts to below approximately 0.05 of a monolayer this transition seems to contain a strong intraatom contribution.     

Surface dangling-bond States and band lineups in hydrogen-terminated Si, Ge, and Ge/si nanowires

We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels epsilon(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3+/-0.1 eV below the vacuum level. Calculations of epsilon(+/-) for isolated atoms indicate that this nearly constant value is a periodic-table atomic property.     

Electronic structure of Ge(111)-(2 × 1) surface in the presence of doping atoms. Ab initio analysis of STM data

We present the result of ab initio modeling of the Ge(111)-(2 × 1) surface electronic structure in the presence of donor doping atom at certain position in the surface bilayer of (2 × 1) reconstruction. We briefly compare these results with the data of experimental low temperature STM investigations. Ab initio calculations demonstrate that doping atom strongly disturbs local electronic structure. The separate state, most probably split off conduction band, appears in the bandgap. Surface LDOS reveals spatial oscillations in vicinity of foreign atom. We also show that the spatial extent of non-negligible inter-atomic interaction between neighboring donor atoms is not less than 70 Å.     

Structure and formation mechanism of Ge E (') center from divalent defects in Ge-doped SiO2 glass

We have performed ab initio quantum-chemical calculations on clusters of atoms modeling a divalent Ge defect in Ge-doped SiO (2) glasses. It has been found that the divalent Ge defect interacts with a nearby GeO (4) tetrahedron, forming complex structural units that are responsible for the observed photoabsorption band at approximately 5 eV. We have shown that these structural units can be transformed into two equivalent Ge E' centers by way of the positively charged defect center.     

Theoretical investigations of the (110) interface between the full Heusler alloys and GaAs

The ab initio calculations of the electronic structure and magnetic properties of the (110) interface between Co₂YZ (Y = Cr or Mn and Z = Al, Si, or Ge) and GaAs are carried out by means of the density functional theory depending on the contact configuration. It is revealed that two of four possible atomic interface configurations have high spin polarization. For Co₂MnSi/GaAs(110), one of the contacts has almost 100% spin polarization. Calculations of the adhesion energy on the interfaces allow the most stable contacts to be established.     

Reconstruction of the (110) surface of III–V semiconductor compounds

We have used ab initio quantum chemical methods to determine the structure of the clean (110) surface of the nine III–V compounds with III = B, Al or Ga, and V = N, P or As. The theoretical results for small clusters give geometries in good agreement with the experimental geometry for GaAs (the only case for which an experimental structure is available), supporting the use of such clusters in studying the reconstruction of the other systems. We find in all cases that the reconstruction of these (110) surfaces is determined by local valence hybridization forces on the surface atoms. To show the effects of these valence forces we have also carried out extensive calculations on the trihydrides of the above-mentioned elements, for which we have calculated bond distances, bond angles, and the variation of the total energy with bond angle, leading to inversion barriers for the trihydrides of column V elements.     

Equilibrium ordering properties of Au–Pd alloys and nanoalloys

Equilibrium configurations of bulk and surface Au–Pd alloys as well as of nanoalloy clusters are studied using Metropolis Monte Carlo importance sampling and the embedded atom method. The clusters contain about 1000 atoms. Three ordered bulk phases are predicted at low temperature, centred on compositions around 25%, 50%, and 75% Pd. The predicted order–disorder transition temperatures partially disagree with the available experimental results, but they are in good agreement with ab initio calculations. Surface enrichment in Au is systematically predicted, accompanied by partial subsurface enrichment in Pd, best enhanced around the equiatomic overall composition. The subsurface enrichment in Pd is suggested to play a decoupling role between surface and bulk conditions and, subsequently, ordered surface structures not induced by the order in the bulk are predicted at low temperatures. Clusters display similar segregation and ordering properties as flat infinite surfaces. However, the stability of the ordering at cluster surfaces is not globally characterized. The order–disorder transitions in the clusters occur at temperatures between 50 and 100 K lower than in the bulk. The disorder appears at the surface and proceeds to the core as the temperature is increased.     

Photoemission studies of the electronic structure of III–V semiconductor surfaces

The photoemission technique using synchroton radiation in the photon energy range 5–450 eV has been applied to the study of the electronic structure of some III–V semiconductor surfaces, prepared by cleavage in situ under ultrahigh vacuum conditions, ? 10^?11 Torr. For p-type GaAs(110), the Fermi level is pinned at the top of the valence band and thus no filled surface states extend into the band-gap. The situation is more complicated for n-type GaAs(110), where band bending easily can be introduced by extrinsic effects (impurities, cleavage quality, etc.) and push the Fermi level down to about midgap. Chemical shifts of inner core levels (3d for Ga and As) are used to obtain information on the bonding site of oxygen on the (110) surface. GaAs(110) can be exposed to atmospheric pressure of molecular oxygen without breaking the bonds between the surface atoms and the bulk. Oxygen is predominantly bonded to the As atoms on the surface. The oxidation behavior is strikingly different for GaSb(110) with formation of gallium and antimony oxides on the surface directly upon oxygen exposure. Heavier oxidation of GaAs(110) and breaking of the surface bonds will also be reported.     

Surfactant properties of cesium in molecular beam epitaxy of GaAs(100)

The experimental and ab initio investigations of the effect of a decrease in the binding energy of surface arsenic atoms under the cesium adsorption on an As-stabilized GaAs(001)-(2 × 4) surface have been performed. The cesium-induced redistribution of the charge on the surface atoms reduces the electron density in the As-Ga bond of the upper layer of the GaAs(001) surface; thus, the As-Ga binding energy decreases and, as a result, the diffusion activation energy, as well as the arsenic atom desorption, decreases. An increase in the diffusion coefficient of surface atoms, along with the property of Cs to segregate on the surface of a growing semiconductor film, makes it possible to use cesium as a surfactant in the low-temperature growth of GaAs by molecular beam epitaxy.     

GaAs(111)表面硅烯、锗烯的几何及电子性质研究

基于密度泛函理论的第一性原理计算方法, 系统研究了硅烯、锗烯在GaAs(111) 表面的几何及电子结构. 研究发现, 硅烯、锗烯均可在As-中断和Ga-中断的GaAs(111) 表面稳定存在, 并呈现蜂窝状六角几何构型. 形成能计算结果证明了其实验制备的可行性. 同时发现硅烯、锗烯与GaAs表面存在共价键作用, 这破坏了其Dirac电子性质. 进一步探索了利用氢插层恢复硅烯、锗烯Dirac电子性质的方法. 发现该方法可使As-中断面上硅烯、锗烯的Dirac电子性质得到很好恢复, 而在Ga-中断面上的效果不够理想. 此外, 基于原子轨道成键和杂化理论揭示了GaAs表面硅烯、锗烯能带变化的物理机理. 研究结果为硅烯、锗烯在半导体基底上的制备及应用奠定了理论基础.     

New Ga-enriched reconstructions on the GaAs(001) surface

To prepare structure-ordered GaAs(001) surfaces at low temperatures, GaAs(001) surfaces coated with native oxides were exposed in an atomic hydrogen flow in the temperature range 280–450 °C. The new Ga-enriched GaAs(001) surfaces with the (4 × 4) and (2 × 4)/c(2 × 8) reconstructions were prepared and studied by the methods of X-ray photoelectron spectroscopy, low-energy electron diffraction, and high-resolution characteristic electron energy loss spectroscopy. For the GaAs(001)-(2 × 4) surface, the structure of the Ga-stabilized surface has been proposed and ab initio computed within the (2 × 4) Ga-trimer unit cell model.     

Surface diffusion of Si,Ge and C adatoms on Si （001） substrate studied the molecular dynamics simulation

Depositions of Si, Ge and C atoms onto a preliminary Si (001) substrate at different temperatures are investigated by using the molecular dynamics method. The mechanism of atomic self-assembling occurring locally on the flat terraces between steps is suggested. Diffusion and arrangement patterns of adatoms at different temperatures are observed. At 900 K, the deposited atoms are more likely to form dimers in the perpendicular [110] direction due to the more favourable movement along the perpendicular [110] direction. C adatoms are more likely to break or reconstruct the dimers on the substrate surface and have larger diffusion distances than Ge and Si adatoms. Exchange between C adatoms and substrate atoms are obvious and the epitaxial thickness is small. Total potential energies of adatoms and substrate atoms involved in the simulation cell are computed. When a newly arrived adatom reaches the stable position, the potential energy of the system will decrease and the curves turns into a ladder-like shape. It is found that C adatoms can lead to more reduction of the system energy and the potential energy of the system will increase as temperature increases.     

Influence of electronic and geometric properties on melting of sodium clusters

Systematics of the melting transition for sodium clusters with 40-355 atoms has been studied with both ab initio and semiclassical molecular dynamics simulations. The melting temperatures obtained with an ab initio method for Na₅₅ ⁺ and Na₉₃ ⁺ correlate well with the experimental results. The semiclassically determined melting temperatures show similarities with the experimentally determined ones in the size region from 55 to 93 and near size 142, and the latent heat in the size region from 55 to 139, but not elsewhere in the size region studied. This indicates that the nonmonotonical melting behavior observed experimentally cannot be fully explained by geometrical effects. The semiclassically determined melting temperature and the latent heat correlate quite well, indicating that they respond similarly to changes in cluster geometry and size. Similarly, the binding energy per atom seems to correlate with the melting temperature and the latent heat of fusion.Received: 30 October 2003, Published online: 20 January 2004PACS: 36.40.Ei Phase transitions in clusters     

Calorimetry at surfaces using high-resolution core-level photoemission

We have developed a method to measure simultaneously the internal energy of bulk and the first layer atoms of a crystal. The internal energy of bulk and the surface atoms of lithium (110) have been evaluated from 22 K up to above the melting transition, applying the Debye model to the thermal broadening of the respective 1s photoemission lines. Our measurements clearly reveal two phase changes: the known liquid to solid transition and the surface melting, occurring 50 K below the bulk melting point.     

Superconductivity in novel Ge-based skutterudites: {Sr,Ba}pt4Ge12

Combining experiments and ab initio models we report on SrPt4Ge12 and BaPt4Ge12 as members of a novel class of superconducting skutterudites, where Sr or Ba atoms stabilize a framework entirely formed by Ge atoms. Below T(c)=5.35 and 5.10 K for BaPt4Ge12 and SrPt4Ge12, respectively, electron-phonon coupled superconductivity emerges, ascribed to intrinsic features of the Pt-Ge framework, where Ge-p states dominate the electronic structure at the Fermi energy.     

Many-body calculations for the relaxed (110) surface of GaAs

Quantum Monte Carlo methods are a stochastic approach to directly tackle the manybody problem in solids. They have proven to describe virutually exactly the ground state of correlated bulk systems, like the homogeneous electron gas or solids of C, Ge, Si and GaAs. Especially Variational quantum Monte Carlo calculations using nonlocal ab initio pseudopotentials offer a way to study systematically many-body effects at solid surfaces, safely founded on the variational principle “the lower the energy, the better the wave function”. Here we report on first attempts for the relaxed (110) surface of GaAs, serving as a prototype of semiconductor surfaces. A finite layer geometry is chosen as the boundary condition of the multidimensional stochastic integration scheme. The exact many-body Hamiltonian is cast in a form allowing for rapid evaluation. New parameters in the correlated trial wave function increase the variational freedom necessary to take into account the influence of the surface. Their physical meaning and their statistical significance are discussed in detail. Presented at the VIII-th Symposium on Surface Physics, Třešt’ Castle, Czech Republic, June 28 – July 2, 1999. This work was supported by the Deutsche Forschungsgemeinschaft under Grant No. Scha 360/17-1. Our calculations were performed on the Cray-T3E at the Zentralinstitut für Angewandte Mathematik, Forschungszentrum Jülich, and on the Cray-T3E at the Konrad-Zuse-Zentrum für Informationstechnik, Berlin.     

Size-dependent spintronic properties of dilute magnetic semiconductor nanocrystals

The electronic structure and magnetic properties of Mn-doped Ge, GaAs, and ZnSe nanocrystals are investigated using real space ab initio pseudopotentials constructed within the local spin-density approximation. The ferromagnetic and half-metallicity trends found in the bulk are preserved in the nanocrystals. However, the Mn-related impurity states become much deeper in energy with decreasing nanocrystalline size, causing the ferromagnetic stabilization to be dominated by double exchange via localized holes rather than by a Zener-like mechanism.     

Si(111)4×1-In表面上铟原子的粘着系数随温度的突变现象

用AES和RHEED研究铟原子在Si(111)4×1-In结构表面粘着系数与温度的关系。在110℃以下,几乎为零的铟原子的粘着系数是由于4×1-In结构的原子排列使表面呈现价键饱和状态所致;在110—120℃温区内发生的粘着系数的阶跃变化可以用表面熔化所导致的有序-无序的相变模型来解释;高于120℃,粘着系数始终接近于1。 关键词：