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Photoeletricity Capability of Imager Detector with Coated Blends of Polymer and Perylene or Coronene
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Perylene and coronene have been synthesized with good yield via the Dields-Alder reaction.They have good photoluminescence properties and could transfer ultraviolet light to visible-loght.To find an easy way of making a better ultraviolet charge coupled device,we blended perylene or coronene with polymers.Then,these blends were analysed by the photoluminescence spectrum.The results indicate that the blends have larger fluorescence intensity than pure perylene or coronene.Through spreading these blends on image detectors,organic image detectors with good ultraviolet photoelectricity capability were prepared. 相似文献
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制备了基于单根ZnO纳米线的紫外光探测原型器件,并研究了聚苯乙烯硫酸钠表面修饰对器件紫外响应特性的影响.研究发现,在相同的紫外光照射条件下,表面修饰后的器件对紫外光的探测灵敏度比修饰前提高了3个数量级.I-V特性研究表明,修饰前后器件在光照时的电导没有明显变化,但修饰后器件的暗电导却下降了3个数量级.这说明通过表面修饰降低探测器的暗电导是提高紫外光探测器灵敏度的一条重要途径.
关键词:
紫外光探测器
纳米结构
ZnO
表面修饰 相似文献
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GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal-semiconductor-metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied. 相似文献
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人造卫星可以观测覆盖30acre(英亩,1acre=0.405hm^2,hm^2为公顷,1hm^2=10^4m^2)左右的森林大火,而小面积的火焰通常可以用烟雾扫描器来探测,这种扫描器可以捕捉被烟雾散射的红外光,但是在刮风的天气烟雾被驱散,或火焰在刚刚燃起的时候,唯一可靠的办法是采用能够直接发现火焰的探测器,为避免阳光与火焰混淆,这种探测器必须对波长小于185nm的紫外光灵敏,来自太阳的这种波长的紫外光被臭氧层所吸收,而所有的火焰都会发射这种光线。 相似文献
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碳化硅(SiC)雪崩光电二极管(APD)是一种独具优势的微弱紫外光探测器,其过偏压承受能力是确保器件可靠工作的一个重要因素。本工作设计并制备了穿通型SiC吸收层-电荷控制层-雪崩倍增层分离(SACM)APD。基于这种结构,器件电场从雪崩倍增层向吸收层扩展,从而减小了雪崩倍增层内电场强度变化率,最终将器件过偏压承受能力提高到10 V;得益于吸收层的分压,雪崩倍增层的电场强度得到有效降低,载流子隧穿可能性减小,这能够有效降低器件暗计数,从而有利于提高器件探测灵敏度;此外,设计的SiC SACM APD倾斜台面仅刻蚀到雪崩倍增层上表面,这能够让器件填充因子提高至约60%,显著改善了深刻蚀导致的传统SACM结构有效光敏区域减小的问题。 相似文献
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窄带光电探测系统在荧光检测、人工视觉等领域具有广泛应用.为了实现对特殊波段的窄带光谱探测,传统上需要将宽带探测器和光学滤波片集成.但是,随着检测技术的发展,人们对探测系统的功耗、尺寸、成本等方面也提出了更高要求,结构复杂、成本高的传统窄带光电探测器应用受到限制.于是,本文展示了一种基于多孔GaN/CuZnS异质结的无滤波、窄带近紫外光电探测器.通过光电化学刻蚀和水浴生长方法,分别制备了具有低缺陷密度的多孔GaN薄膜和高空穴电导率的CuZnS薄膜,并构建了多孔GaN/CuZnS异质结近紫外光电探测器.得益于GaN的多孔结构和CuZnS的光学滤波作用,器件在–2 V偏压、370 nm紫外光照下,光暗电流比超过4个数量级;更重要的是,器件具有超窄带近紫外光响应(半峰宽<8 nm,峰值为370 nm).此外,该探测器的峰值响应度、外量子效率和比探测率分别达到了0.41 A/W, 138.6%和9.8×1012 Jones.这些优异的器件性能显示了基于多孔GaN/CuZnS异质结的近紫外探测器在窄光谱紫外检测领域具有广阔的应用前景. 相似文献
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利用射频磁控溅射设备制备ZnO薄膜, 最终制备ZnO/Pt纳米粒子/ZnO 结构的金属-半导体-金属型紫外光电探测器. 研究了Pt纳米粒子处在ZnO薄膜层中的不同深度对金属-半导体-金属型紫外光电探测器响应性能的影响. 结果表明, 探测器的响应度随着Pt纳米粒子在ZnO薄膜层中所处深度的增大而升高. 在60 V偏压下, 包埋Pt最深的探测器在波长365 nm处取得响应度最大值1.4 A·W-1, 包埋有Pt探测器的响应度最大值为无Pt 纳米粒子探测器响应度最大值的7倍. 结合对ZnO薄膜表面的表征及探测器各项性能的测试, 得出包埋Pt纳米粒子增强器件的响应性能可归因于表面等离子体增强散射. 相似文献
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The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector
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In this paper the temperature dependence of responsivity and response
time for 6H-SiC ultraviolet (UV) photodetector is simulated based on
numerical model in the range from 300K to 900K. The simulation
results show that the responsivity and the response time of device
are less sensitive to temperature and this kind of UV photodetector
has excellent temperature stability. Also the effects of device
structure and bias voltage on the responsivity and the response time
are presented. The thicker the drift region is, the higher the
responsivity and the longer the response time are. So the thickness
of drift region has to be carefully designed to make trade-off
between responsivity and response time. 相似文献
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GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal-semiconductor-metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358um and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied. 相似文献
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The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsiyity changes very little with the increase of reverse bias voltage. However, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. It is proposed that the surface states near the edge of the electrode may lead to a reduction of effective Schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain. 相似文献
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Hongjuan Huang Dawei Yan Guosheng Wang Feng Xie Guofeng Yang Shaoqing Xiao Xiaofeng Gu 《中国光学快报(英文版)》2014,12(9):92301-69
We study the performance of GaN-based p–i–n ultraviolet(UV) photodetectors(PDs) with a 60 nm thin ptype contact layer grown on patterned sapphire substrate(PSS). The PDs on PSS exhibit a low dark current of ~2 pA under a bias of-5 V, a large UV/visible rejection ratio of ~7×103, and a high-quantum efficiency of ~40% at 365 nm under zero bias. The average quantum efficiency of the PDs still remains above 20% in the deep-UV region from 280 to 360 nm. In addition, the noise characteristics of the PDs are also discussed, and the corresponding specific detectivities limited by the thermal noise and the low-frequency 1/f noise are calculated. 相似文献
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ZnO肖特基势垒紫外探测器 总被引:8,自引:1,他引:7
以p-Si(111)为衬底,用水热法首次制得六棱微管ZnO。并以此为有源区利用平面磁控溅射技术沉积得到Ag叉指状电报,从而制作了Ag/n-ZnO肖特基势垒结紫外探测器。对该紫外光探测器的暗电流和365nm波长光照下的光电流、光响应和量子效率进行了测试。测试结果表明:Ag和ZnO六棱管间已形成肖特基接触.其有效势垒高度为0.35eV。无光照时,暗电流很小,当用λ=365nm的光照射Ag/n-ZnO肖特基结时.在5.9V偏压时,光生电流分别为25.6,57.9μA。Ag/n-ZnO紫外探测器有明显的光响应特性和较高的量子效率,在366nm波长处,光响应度达到最大值0.161A/W,量子效率为54.7%。 相似文献