Crystal structure of Ga<Subscript>0.5</Subscript>In<Subscript>1.5</Subscript>Se<Subscript>3</Subscript> solid solution

A solid solution of the GaIn₃Se₆ (2Ga_0.5In_1.5Se₃) composition with a hexagonal lattice (a = 7.051(3) Å, c = 19.148(2) Å, sp. gr. P6₁, z = 6, V = 824.4332(4) ų, ρ = 5.379(2) g/cm³) has been synthesized as a result of alloying Ga, In, and Se elements with a metal ratio of 1: 3. It was established that six out of nine In atoms in the lattice are located in a trigonal bipyramid, while the other three In atoms and three Ga atoms have a tetrahedral coordination.     

X-ray analysis of multilayer In<Subscript>0.52</Subscript>Al<Subscript>0.48</Subscript>As/In<Subscript>0.53</Subscript>Ga<Subscript>0.47</Subscript>As/In<Subscript>0.52</Subscript>Al<Subscript>0.48</Subscript>As HEMT heterostructures with InAs nanoinsert in quantum well

In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.     

Gallium vacancy ordering in Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin layers on Si(100), Si(111), and Si(123) substrates

Thin Ga₂Se₃ layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different substrate orientations are discussed. The Ga₃Se₄(100)с(2 × 2) and Ga₂Se₃(111)(√3 × √3)-R30° ordered structures are formed on the Si(100) and Si(111) surfaces, respectively.     

Epitaxial low-temperature growth of In<Subscript>0.5</Subscript>Ga<Subscript>0.5</Subscript>As films on GaAs(100) and GaAs(111)<Emphasis Type="Italic">A</Emphasis> substrates using a metamorphic buffer

A complex investigation of epitaxial In_0.5Ga_0.5As films grown on GaAs substrates with crystallographic orientations of (100) and (111)A in the standard high- and low-temperature modes has been performed. The parameters of the GaAs substrate and In_0.5Ga_0.5As film were matched using the technology of step-graded metamorphic buffer. The electrical and structural characteristics of the grown samples have been studied by the van der Pauw method, atomic force microscopy, scanning electron microscopy, and transmission/ scanning electron microscopy. The surface morphology is found to correlate with the sample growth temperature and doping with silicon. It is revealed that doping of low-temperature In_0.5Ga_0.5As layers with silicon significantly reduces both the surface roughness and highly improves the structural quality. Pores 50–100 nm in size are found in the low-temperature samples.     

Effect of ultrasound on the growth striation and electrical properties of Ga<Subscript>0.03</Subscript>In<Subscript>0.97</Subscript>Sb single crystals

The growth striation of impurity segregation and electrical properties of Ga_0.03In_0.97Sb single crystals grown by the Czochralski method in an ultrasonic field have been investigated. It is established that ultrasonic irradiation of the melt during growth significantly decreases the growth striation (in particular, it eliminates striations spaced at a distance of more than 14 μm). The Ga_0.03In_0.97Sb single crystals grown in an ultrasonic field had a higher charge-carrier mobility and thermoelectric power in comparison with the single crystals grown without ultrasound.     

Phase transitions in compounds with the Ca<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> structure

Possible structural changes described by the group-subgroup relationships in the Ca₃Ga₂Ge₄O₁₄-type structure (sp. gr. P321) are considered. The most probable phase transitions seem to be those accompanied by lowering of the symmetry to the maximal non-isomorphic subgroups P3 and C2. It is shown that only destructive phase transitions accompanied by symmetry rise up to the minimal non-isomorphic supergroups for the given structure type can take place. The change of the trigonal symmetry to monoclinic is revealed in La₃SbZn₃Ge₂O₁₄, whose crystal structure is refined as a derivative structure of the Ca₃Ga₂Ge₄O₁₄ structure type within the sp. gr. A2 (C2). At ～250°C, La₃SbZn₃Ge₂O₁₄ undergoes a reversible phase transition accompanied by symmetry rise, A2 ? P321. Similar phase transitions, P321 ? A2, are also observed in La₃Nb_0.5Ga_5.5O₁₄ and La₃Ta_0.5Ga_5.5O₁₄ under the hydrostatic pressures 12.4(3) and 11.7(3) GPa, respectively. The mechanisms of compression and phase transition are based on the anisotropic compressibility of a layer structure. With the attainment of the critical stress level in the structure, the elevated compressibility in the (ab) plane gives rise to a phase transition accompanied by the loss of the threefold axis. Attempts to reveal low-temperature phase transitions in a number of representatives of the langasite family have failed.     

Crystal-structure refinement of Sr<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript>

The accurate X-ray diffraction study of a Sr₃Ga₂Ge₄O₁₄ crystal was performed based on two X-ray diffraction data sets collected on a diffractometer equipped with a CCD area detector (a = 8.2776(2), c = 5.0415(1) Å, sp. gr. P321, Z = 1, R/wR = 0.78/0.69%, 3645 independent reflections). The structure of Sr₃Ga₂Ge₄O₁₄ is characterized by the presence of two mixed cation sites, which is accompanied by the anharmonic motion not only of cations, but also of two oxygen atoms in general positions. The structures and electromechanical characteristics of Sr₃Ga₂Ge₄O₁₄ and Sr₃TaGa₃Si₂O₁₄ were compared. The Sr₃Ga₂Ge₄O₁₄ structure is characterized by a larger elongation of the Sr polyhedron along the a axis and, simultaneously, by the smaller unit-cell parameter a compared with Sr₃TaGa₃Si₂O₁₄, which correlates with the ratio of the piezoelectric coefficients d ₁₁. The absence of thermally stable directions in the crystals of Sr₃Ga₂Ge₄O₁₄ and Sr₃TaGa₃Si₂O₁₄ is consistent with the absence of the anomalous temperature dependence of the dielectric constant ?₃₃.     

Structure characterization of MHEMT heterostructure elements with In<Subscript>0.4</Subscript>Ga<Subscript>0.6</Subscript>As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In_0.4Ga_0.6As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In_xGa_1–xAs ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.     

Absolute structure of La<Subscript>3</Subscript>Ga<Subscript>5</Subscript>SiO<Subscript>14</Subscript> langasite crystals

The absolute structure of La₃Ga₅SiO₁₄ piezoelectric crystals (a = 8.1746(6) Å, c = 5.1022(4) Å, space group P321, Z = 1) with the positive sense of rotation of the plane of polarization is refined using X-ray diffraction analysis (R = 1.37%, R _w = 1.71%, 2413 unique reflections, max sinθ/λ = 1.15 Å^?1). The contributions from the anharmonicity of thermal vibrations of lanthanum atoms are calculated with the use of the components of the third-and fourth-rank tensors. It is demonstrated that these contributions can have a significant effect.     

Synthesis and Structure of [Fe<Subscript>3</Subscript>O(O<Subscript>2</Subscript>CCH<Subscript>2</Subscript>OMe)<Subscript>6</Subscript>(H<Subscript>2</Subscript>O)<Subscript>3</Subscript>][FeCl<Subscript>4</Subscript>]

Abstract  The structure of [Fe₃O(O₂CCH₂OMe)₆(H₂O)₃][FeCl₄] · 2.5H₂O has been determined. The three iron atoms and the μ₃-oxo are coplanar. Each carboxylic ligand is bidentate and links two iron atoms in the cluster. The clusters are linked by intra-trimer hydrogen bonding to form a zigzag motif that forms sheets via hydrogen bonding involving disordered waters of hydration. The [FeCl₄]⁻ anion is intercalated between the hydrogen-bonded sheets. Crystal data: space group P2₁/n, a = 10.276(2), b = 22.793(5), c = 17.091(3) ?, β = 96.66(3)°, V = 3976(1) ?³, Z = 4, R = 0.0837, wR ₂ = 0.1836. Graphical Abstract  The structure of [Fe₃O(O₂CCH₂OMe)₆(H₂O)₃][FeCl₄] · 2.5H₂O has been determined in which the clusters are linked by intra-trimer hydrogen bonding to form a zigzag motif that forms sheets via hydrogen bonding involving disordered waters of hydration.      

Synthesis and crystal structure of bis(malonato)tetra (aqua)barium(II)cobalt(II): [BaCo(C<Subscript>3</Subscript>H<Subscript>2</Subscript>O<Subscript>4</Subscript>)<Subscript>2</Subscript>(H<Subscript>2</Subscript>O)<Subscript>4</Subscript>]

The title compound [BaCo(C₃H₂O₄)₂(H₂O)₄] was synthesized and its crystal structure was determined. The compound is orthorhombic, space group Pccn with a = 18.974(3) Å, b = 6.783(2) Å, c = 9.394(4) Å. The structure is polymeric and consists of edge-sharing BaO₈ polyhedra and CoO₆ octahedra linked together by the malonate groups. The geometry around the Ba(II) centres is a slightly distorted square-antiprism with Ba–O distances ranging from 2.789(4) to 2.843(4) Å. Around the Co(II) centres, the coordination forms a distorted octahedron with Co–O bonds between 2.040(3) and 2.238(4) Å.     

Growth and structure of La<Subscript>3</Subscript>Zr<Subscript>0.5</Subscript>Ga<Subscript>5</Subscript>Si<Subscript>0.5</Subscript>O<Subscript>14</Subscript> crystals

The complete X-ray structure determination of Czochralski grown La₃Zr_0.5Ga₅Si_0.5O₁₄ single crystals with the Ca₃Ga₂Ge₄O₁₄ structure is performed (sp. gr. P321, a = 8.226(1) Å, c = 5.1374(6) Å, Z = 1, Mo K_α1 radiation, 1920 crystallographically independent reflections, R = 0.0166, R_w = 0.0192). The absolute structure is determined. It is shown that possible transition of some of La atoms (～1.2%) from the 3e to 6g position may give rise to the formation of structural defects.     

Crystal structure of Rb<Subscript>2</Subscript>[Ti(VO<Subscript>2</Subscript>)<Subscript>3</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>]

The crystal structure of the new compound Rb₂[Ti(VO₂)₃(PO₄)₃] obtained by hydrothermal synthesis in the RbCl-TiPO₄-V₂O₅-B₂O₃-H₂O system (a = 13.604(2) Å, c = 9.386(2) Å, sp. gr. P6cc, Z = 4, ρ_calcd = 3.32 g/cm³) has been studied by X-ray diffraction (Xcalibur-S-CCD diffractometer, R = 0.038). It is shown that the isotypism of Rb₂[Ti(VO₂)₃(PO₄)₃] and Cs₂[Ti(VO₂)₃(PO₄)₃] is caused by the flexibility of a mixed anionic framework composed of phosphorus tetrahedra, vanadium five-vertex polyhedra, and titanium octahedra (bases of the crystal structures of these compounds). The topological correlations between the structures of titanium-vanadyl phosphates and benitoite and beryl silicates are analyzed.     

Synthesis and Crystal Structure of Complex [Nd(2-FC<Subscript>6</Subscript>H<Subscript>4</Subscript>COO)<Subscript>3</Subscript>·(2-FC<Subscript>6</Subscript>H<Subscript>4</Subscript>COOH)·H<Subscript>2</Subscript>O]<Subscript>2</Subscript>

The neodymium complex with 2-fluorobenzoic acid was synthesized and characterized by X-ray diffraction. The complex crystallizes in the triclinic system with space group Pī, lattice parameters: a = 9.2747(10) Å, b = 11.7594(13) Å, c = 13.5158(14) Å, α = 110.220(2)°, β = 93.930(2)°, γ = 90.894(2)°, V = 1378.8(3) Å³, Z = 1, Dcalc = 1.733 Mg/m³. The complex is a binuclear molecule in which four 2-fluorobenzoato groups act as bidentate and tridentate bridges between the two Nd³⁺ ions. Each Nd³⁺ ion is additionally chelated by one 2-fluorobenzoato group and coordinated by one 2-fluorobenzoic acid and one water molecule.     

Synthesis and structure of (Rb<Subscript>0.50</Subscript>Ba<Subscript>0.25</Subscript>)[UO<Subscript>2</Subscript>(CH<Subscript>3</Subscript>COO)<Subscript>3</Subscript>]

A new compound (Rb_0.50Ba_0.25)[UO₂(CH₃COO)₃] is synthesized and its crystal structure is studied by X-ray diffraction. The compound crystallizes in the form of yellow plates belonging to the cubic crystal system. The unit cell parameter a = 17.0367(1) Å, V = 4944.89(5) ų, space group I \(\bar 4\)3d, Z = 16, and R = 0.0182. The coordination polyhedron of the uranium atom is a hexagonal bipyramid with oxygen atoms of three acetate groups and the uranyl group in the vertices. The crystal chemical formula of the uranium-containing group is AB ₃ ⁰¹ (A = UO ₂ ²⁺ , B ⁰¹ = CH₃COO^?). The oxygen atoms of the acetate groups that enter the coordination polyhedron of uranium are bound to barium and rubidium atoms.     

Crystal and Molecular Structure of Dichloro(ethylenediamine)gold(III) Nitrate: [Au(NH<Subscript>2</Subscript>CH<Subscript>2</Subscript>CH<Subscript>2</Subscript>NH<Subscript>2</Subscript>)Cl<Subscript>2</Subscript>]NO<Subscript>3</Subscript>

Abstract  The gold(III) atom in [Au(NH₂CH₂CH₂NH₂)Cl₂]NO₃ is chelated by the ethylenediamine (en) ligand and the approximately square planar geometry is completed by two chloride atoms. Weak Au···O and Au···Cl contacts are noted above and below the square plane leading to a tetragonally distorted octahedron for the gold(III) center. Extensive charge-assisted hydrogen bonding of the type N–H···O leads to the formation of a 2-D array and layers are consolidated into a 3-D network via C–H···O and C–H···Cl contacts. The compound crystallizes in the orthorhombic space group Pbca with a = 10.3380(11) ?, b = 8.2105(7) ?, c = 19.625(2) ?, and Z = 8. Index Abstract  Square planar complex cations form additional Au···O and Au···Cl interactions to form a tetragonally distorted octahedron for gold. The ionic components are connected into a 2-D array via charge-assisted N–H···O hydrogen bonding interactions.      

<Emphasis Type="Italic">Trans-</Emphasis>dichlorodioxobis(triphenylphosphate)molybdenum(VI), MoO<Subscript>2</Subscript>Cl<Subscript>2</Subscript>[OP(OPh)<Subscript>3</Subscript>]<Subscript>2</Subscript>

Abstract  The molecular structure of trans-dichlorodioxobis(triphenylphosphate) molybdenum(VI), MoO₂Cl₂[OP(OPh)₃]₂ has been determined. Crystal data: Monoclinic, Pn, a = 11.767(2), b = 10.341(2), c = 15.682(3) ?, β = 92.27(3)°, V = 1906.8(7) ?⁻³, Z = 2. Trans-dichlorodioxobis(triphenylphosphate)molybdenum(VI) was obtained by the reaction of molybdenum oxide, HCl and triphenylphosphate and was characterized by elemental analysis, IR, and ¹H-NMR spectroscopy. Index Abstract   Trans-dichlorodioxobis(triphenylphosphate)molybdenum(VI), MoO₂Cl₂[OP(OPh)₃]₂ V. Huch¹, R. Kumar², S. Mathur¹, R. Ratnani² The immediate environment around Mo is distorted octahedral with two cis-oxygen atoms and two trans-chlorine atoms along with two triphenylphosphate moieties.      

Magnetovolume effects and effect of pressure on the temperature dependence of sublattice magnetization in Ho(Co<Subscript>0.9</Subscript>Ga<Subscript>0.1</Subscript>)<Subscript>2</Subscript> compounds

The temperature dependence of the magnetic moments of cobalt and holmium ions in the temperature range of 5–300 K at pressures of P = 0 and 5 kbar was determined based on neutron diffraction data on Ho(Co_0.9Ga_0.1)₂ intermetallide. The temperature dependence of the lattice parameter was established, and the spontaneous bulk magnetostriction was determined. These quantities were calculated using the exchange striction model of a ferrimagnet, and good agreement with the experiment was obtained. The parameters of the exchange interaction between pairs of atoms of this compound and the magnetoelastic coupling constant were estimated. An original interpretation of the nature of the first-order magnetic phase transition in HoCo₂ is proposed.     

Accurate crystal structure refinement of La<Subscript>3</Subscript>Ta<Subscript>0.25</Subscript>Ga<Subscript>5.25</Subscript>Si<Subscript>0.5</Subscript>O<Subscript>14</Subscript>

An accurate X-ray diffraction study of an La₃Ta_0.25Ga_5.25Si_0.5O₁₄ single crystal has been performed using two data sets obtained independently for the same sample in different orientations on a diffractometer with a 2D CCD detector. This structure was refined with an averaged set of these data (a = 8.1936(15) Å c = 5.1114(6) Å, sp. gr. P321, Z = 1, R/wR = 0.75/0.71%, 4030 independent reflections). This analysis was aimed at determining the character of the occupancies of the cation position in the structure. The octahedra at the origin of coordinates turned out to be statistically occupied by gallium and tantalum ions of similar sizes, whereas the tetrahedra on the threefold symmetry axes are occupied by gallium and silicon whose ionic radii differ significantly. The latter circumstance caused the splitting of oxygen positions and made it possible to reliably establish the structural position of statistically located [SiO₄] and [GaO₄] tetrahedra of different sizes.