GaAs:Cr探测器对聚变脉冲中子诊断的灵敏度研究

 介绍了国产GaAs:Cr光电导探测器(简称PCD)在DT聚变中子辐射脉冲测量中的应用，利用PIN探测系统绝对测量结果，获得了GaAs:Cr PCD的14.1MeV中子直照灵敏度是1.5×10^-20C cm²/mm³，测量误差为±18%。此结果与理论预估和国外报道在误差内符合。     

用拉曼光谱测量离子注入引起的晶格应变

 对于10个周期的AlAs/GaAs超晶格和25个周期的GaAs/Ga0.92In0.08As超晶格,在室温下进行0.28 MeV的Zn＋注入,注入剂量为5×10¹³~5×10¹⁴ cm^-2。通过拉曼光谱测量,定量地分析了由于离子注入所引起的晶格内应变。实验结果表明：在所选用的注入剂量下,由于离子注入引起的应变小于体材料GaAs的最大非驰豫应变值0.038,说明该注入条件下,注入区的结晶态仍然保持得比较好。在较高注入剂量下应变达到饱和,说明缺陷的产生和复合达到了平衡,从而形成了均衡的应变场分布。     

NORMAL-INCIDENCE QUANTUM WELL INFRARED PHOTODETECTOR WITHOUT GRATING COUPLER

The n-type GaAs/Al_xGa_1-xAs multiple quantum well infrared photodetectors have been demonstrated without any grating couplers. We have achieved a responsivity R_v of 1.7×10⁵V/W and a detectivity D_λ^* of 4.0×10¹⁰ cm (Hz)^1/2/W for a wavelength of 8.4 μm at a temperature T = 77 K in normal incidence.     

掺铍GaAs量子阱的光致荧光

测量了掺铍的,阱宽约为10nm的GaAs量子阱在4.2K的光致荧光。掺杂浓度分别为1×10¹⁷和5×10¹⁸cm^-3。测量结果表明:对于无规掺杂,局域在阱中心的铍的状态密度与导带电子从n=1量子能级到阱中心中性铍的跃迁概率的乘积大于对应于介面铍的乘积。另外,实验结果也表明:当掺杂浓度升高时,由于带隙收缩的影响,阱中心铍的电离能减小。     

高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。     

金原子团簇的分频散射光谱研究

液相金原子团簇是一种非线性光学介质.它在580nm处产生一个最强共振散射峰.当激发波长为290nm(1.03×10¹⁵Hz)时,液相金原子团簇在580nm(1/2×1.03×10¹⁵Hz)和870nm(1/3×1.03×10¹⁵Hz)分别产生一个1/2分频和1/3分频散射峰;当激发波长为580nm(5.02×10¹⁴Hz)时在290nm(2×5.02×10^-14Hz)和870nm(2/3×5.02×10¹⁴Hz)分别产生一个2倍频和2/3分频散射峰;当激发波长为870nm(3.34×10¹⁴Hz)时在580nm(3/2×3.34×10¹⁴Hz)和290nm(3×3.34×10¹⁴Hz)分别产生一个3/2分频和3倍频散射峰.分频散射和倍频散射峰与共振散射峰具有相似的散射行为.从激励光与液相金原子团簇相互作用的运动方程出发,根据傅氏变换理论,较好地解释了液相金原子团簇产生的一些非线性散射光谱.     

MSM结构GaAs探测器的抗辐照性能

研究一种双金属接触的GaAs半导体探测器在14MeV中子辐照下的性能.测量了探测器经过10¹²n/cm²中子辐照剂量后的反向漏电流、电荷收集效率和最小电离粒子能谱,并且与⁶⁰Co 1.25MeV光子辐照的测量结果相比较.对中子辐照引起探测器时间性能变化和辐照损伤机制进行了探讨.并根据实验结果提出了这种双金属接触GaAs探测器灵敏层分布的一种假设,理论计算和实验数据相符合.     

110keV质子辐照对温控涂层性质的影响

实验研究了1.0×10¹¹—1.0×10¹⁷p/cm²通量范围内110keV质子辐照引起的温控涂层热光性能的变化. 实验表明, 在1.0×10¹¹p/cm²通量辐照下6种温控涂层材料的相对光反射率基本没有变化,当辐射通量在1.0×10¹²—1.0×10¹⁶p/cm²范围变化时,某些低吸收率的温控涂层的太阳吸收率随着辐射通量增加先变小而后又增大.这一特性对于制备更低太阳吸收率的温控涂层具有应用价值.     

基于PdSe2/GaAs异质结的高灵敏近红外光伏型探测器的制备和图像传感的应用

本文制备了一种基于PdSe₂/GaAs异质结的高灵敏近红外光电探测器,该探测器是通过将多层PdSe₂薄膜转移到平面GaAs上制成的. 所制备的PdSe₂/GaAs异质结器件在808 nm光照下表现出明显的光伏特性,这表明近红外光电探测器可以用作自驱动器件. 进一步的器件分析表明,这种杂化异质结在零偏电压和808 nm光照下具有1.16×10⁵的高开关比. 光电探测器的响应度和比探测度分别约为171.34 mA/W和2.36×10¹¹ Jones. 而且,该器件显示出优异的稳定性和可靠的重复性. 在空气中2个月后,近红外光电探测器的光电特性几乎没有下降,这归因于PdSe₂的良好稳定性. 最后,基于PdSe₂/GaAs的异质结器件还可以用作近红外光传感器.     

掺铒铋酸盐玻璃的光谱性质研究

研究了掺铒铋酸盐玻璃的吸收和荧光光谱性质,应用Judd-Ofelt理论计算了玻璃的三个强度参量Ω_t=(t=2,4,6),分别为Ω₂=3.71×10^-20cm²,Ω₄=1.86×10^-20cm²,Ω₆=1.28×10^-20cm²,计算了Er³⁺离子的自发跃迁几率、荧光分支比等光谱参量.经荧光谱测试发现掺Er³⁺铋酸盐玻璃的荧光半高宽可达70nm.应用McCumber理论计算1.53μm处的受激发射截面可达9×10^-21cm².对Er³⁺离子在不同基质玻璃中光谱特性的比较发现,Er³⁺在铋酸盐玻璃中具有相对较高的受激发射截面和宽的荧光半高宽.     

100 keV质子辐照对空间GaAs/Ge太阳电池光电效应的影响

利用空间环境模拟设备,用固定能量为100keV、注量为1×10⁹—3×10¹²cm^-2的质子,对空间实用GaAs/Ge太阳电池进行了辐照试验.利用伏安(I-V)特性、光谱响应和光致发光(PL)光谱测试,研究分析了电池的光电效应.试验表明,电池的各种电性能参数如短路电流(I_sc)、开路电压(V_oc)、最大输出功率(P_{m< 关键词： GaAs/Ge太阳电池 质子辐照 光电效应}     

Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy

The gradient-doping structure is first applied to prepare the transmission-mode GaAs photocathode and the integral sensitivity of the sealed image tube achieves 1420~μ A/lm. This paper studies the inner carrier concentration distribution of the gradient-doping transmission-mode GaAs photocathode after molecular beam epitaxy (MBE) growth using the electrochemical capacitance-voltage profiling. The results show that an ideal gradient-doping structure can be obtained by using MBE growth. The total band-bending energy in the gradient-doping GaAs active-layer with doping concentration ranging from 1× 10^19~cm^-3 to 1×10^18~cm^-3 is calculated to be 46.3 meV, which helps to improve the photoexcited electrons movement toward surface for the thin epilayer. In addition, by analysis of the band offsets, it is found that the worse carrier concentration discrepancy between GaAs and GaAlAs causes a lower back interface electron potential barrier which decreases the amount of high-energy photoelectrons and affects the short-wave response.     

Effect of high‐energy light‐ion irradiation on SI‐GaAs and GaAs:Cr as observed by Raman spectroscopy

The structural evolutions of high‐energy (50 MeV) lithium ion (Li³⁺) irradiated undoped semi‐insulating GaAs (SI‐GaAs) and chromium‐doped SI‐GaAs (GaAs:Cr) were investigated by Raman measurements. It is shown that high‐energy Li³⁺ irradiation causes amorphization beyond a fluence of 3 × 10¹³ ions/cm² in undoped SI‐GaAs. Interestingly, the same fluence of ions does not seem to affect the crystallinity in GaAs:Cr appreciably. The effect of ion irradiation on the change in lattice ordering and anharmonicity of the phonon modes of undoped SI‐GaAs and GaAs:Cr is also compared. Copyright © 2011 John Wiley & Sons, Ltd.     

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

We report on the growth of fully relaxed and smooth GaSb layers with reduced density of threading dislocations, deposited on GaAs substrate. We prove that three parameters have to be controlled in order to obtain applicable GaSb buffers with atomically smooth surface: interfacial misfit (IMF), the etch pit density (EPD) and the growth mode.The GaSb/GaAs interfacial misfit array and reduced EPD ≤1.0 × 10⁷ cm^?2 were easily obtained using As-flux reduction for 3 min and Sb-soaking surface for 10 s before the GaSb growth initiation. The successive growth of GaSb layer proceeded under the technological conditions described by the wide range of the following parameters: r_G ∈ (1.5 ÷ 1.9) Å/s, T_G ∈ (400 ÷ 520)°C, V/III ∈ (2.3 ÷ 3.5). Unfortunately, a spiral or 3D growth modes were observed for this material resulting in the surface roughness of 1.1 ÷ 3.0 nm. Two-dimensional growth mode (layer by layer) can only be achieved under the strictly defined conditions. In our case, the best quality 1-μm-thick GaSb buffer layer with atomically smooth surface was obtained for the following set of parameters: r_G = 1.5 Å/s, T_G = 530 °C, V/III = 2.9. The layer was characterized by the strain relaxation over 99.6%, 90° dislocations array with the average distance of 5.56 nm, EPD ～8.0 × 10⁶ cm^?2 and 2D undulated terraces on the surface with roughness of about 1 ML. No mounds were observed. We belive that only thin and smooth GaSb layer with reduced EPD may be applied as the buffer layer in complex device heterostructures. Otherwise, it may cause the device parameters deterioration.     

Estimation of various scattering parameters and 2-DEG mobilities from electron mobility calculations in the three conduction bands Γ, L and X of gallium arsenide

The electron drift mobility in Γ conduction band of GaAs has been calculated before, but for the first time, we have made attempts to estimate the electron mobilities in higher energy L and X minima. We have also calculated the value of mobility of two-dimensional electron gas needed to predict hetero-structure device characteristics using GaAs. Best scattering parameters have been derived by close comparison between experimental and theoretical mobilities. Room temperature electron mobilities in Γ, L and X valleys are found to be nearly 9094, 945 and 247 cm²/V-s respectively. For the above valleys, the electron masses, deformation potentials and polar phonon temperatures have been determined to be (0.067, 0.22, 0.39m ₀), (8.5, 9.5, 6.5 eV), and (416, 382, 542 K) as best values, respectively. The 2-DEG electron mobility in Γ minimum increases to 1.54 × 10⁶ from 1.59 × 10⁵ cm²/V-s (for impurity concentration of 10¹⁴ cm⁻³) at 10 K. Similarly, the 2-DEG electron mobility values in L and X minima are estimated to be 2.28 × 10⁵ and 1.44 × 10⁵ cm²/V-s at 10 K, which are about ∼4.5 and ∼3.9 times higher than normal value with impurity scattering present.      

Leed,aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption

Epitaxially grown GaAs(001), (111) and (1?1?1?) surfaces and their behaviour on Cs adsorption are studied by LEED, AES and photoemission. Upon heat treatment the clean GaAs(001) surface shows all the structures of the As-stabilized to the Ga-stabilized surface. By careful annealing it is also possible to obtain the As-stabilized surface from the Ga-stabilized surface, which must be due to the diffusion of As from the bulk to the surface. The As-stabilized surface can be recovered from the Ga-stabilized surface by treating the surface at 400°C in an AsH₃ atmosphere. The Cs coverage of all these surfaces is linear with the dosage and shows a sharp breakpoint at 5.3 × 10¹⁴ atoms cm^?2. The photoemission reaches a maximum precisely at the dosage of this break point for the GaAs(001) and GaAs(1?1?1?) surface, whereas for the GaAs(111) surface the maximum in the photoemission is reached at a higher dosage of 6.5 × 10¹⁴ atoms cm^?2. The maximum photoemission from all surfaces is in the order of 50μA Im^?1 for white light (T = 2850 K). LEED measurements show that Cs adsorbs as an amorphous layer on these surfaces at room temperature. Heat treatment of the Cs-activated GaAs (001) surface shows a stability region of 4.7 × 10¹⁴ atoms cm^?2 at 260dgC and one of 2.7 × 10¹⁴ atoms cm^?2 at 340°C without any ordering of the Cs atoms. Heat treatment of the Cs-activated GaAs(111) crystal shows a gradual desorption of Cs up to a coverage of 1 × 10¹⁴ atoms cm^?2, which is stable at 360°C and where LEED shows the formation of the GaAs(111) (√7 × √7)Cs structure. Heat treatment of the Cs-activated GaAs(1?1?1?) crystal shows a stability region at 260°C with a coverage of 3.8 × 10¹⁴ atoms cm^?2 with ordering of the Cs atoms in a GaAs(1?1?1?) (4 × 4)Cs structure and at 340°C a further stability region with a coverage of 1 × 10¹⁴ at cm^?2 with the formation of a GaAs(1?1?1?) (√21 × √21)Cs structure. Possible models of the GaAs(1?1?1?) (4 × 4)Cs, GaAs(1?1?1?)(√21 × √21)Cs and GaAs(111) (√7 × √7)Cs structures are given.     

Electrical characteristics of GaAs MOS capacitor and field effect transistor with atomic layer-deposited TiO2/Al2O3 dielectrics

The (NH₄)₂S treatment can reduce native oxides and passivate GaAs. Atomic layer-deposited Al₂O₃ can further remove the residue native oxides by self-cleaning. Stacked with high dielectric constant TiO₂ prepared by atomic layer deposition on Al₂O₃/(NH₄)₂S-treated GaAs MOS capacitor, the leakage current densities can reach 4.5 × 10^?8 and 3.4 × 10^?6 A/cm² at ±2 MV/cm. The net effective dielectric constant of the entire stack is 18 and the interface state density is about 4.2 × 10¹¹/cm²/eV. The fabricated enhancement-mode n-channel GaAs MOSFET exhibited good electrical characteristics with a maximum g _m of 122 mS/mm and electron mobility of 226 cm²/V s.     

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

ABSTRACT

In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1?×?10¹⁵ and 4?×?10¹⁷?ions?cm^?2 at 100?keV have been described. Atomic force microscopic images obtained from samples implanted with fluence up to 1?×?10¹⁷?ion?cm^?2 showed the formation of GaAs clusters on the surface of the sample. The shape, size and density of these clusters were found to depend on ion fluence. Whereas sample implanted at higher fluence of 4?×?10¹⁷?ions?cm^?2 showed bump of arbitrary shapes due to cumulative effect of multiple silicon ion impact with GaAs on the same place. GXRD study revealed formation of silicon crystallites in the gallium arsenide sample after implantation. The silicon crystallite size estimated from the full width at half maxima of silicon (111) XRD peak using Debye-Scherrer formula was found to vary between 1.72 and 1.87?nm with respect to ion fluence. Hall measurement revealed the formation of n-type layer in gallium arsenide samples. The current–voltage measurement of the sample implanted with different fluences exhibited the diode like behavior.     

Electrical and structural properties of the swift heavy ion irradiated Au/n-GaAs schottky barrier diodes

Abstract

Au/n-GaAs Schottky Barrier Diodes (SBDs) have been fabricated on LEC grown silicon doped (100) GaAs single crystals. The SBDs were irradiated using high energy (120 MeV) silicon ion with fluences of 1 × 10 ¹¹ and 1 × 10¹² ions/cm². Current-Voltage (I-V) characteristics of unirradiated and irradiated diodes were analyzed. The change in the reverse leakage current increases with increasing ion fluence. This is due to the irradiation induced defects at the interface and its increase with the fluence. The diodes were annealed at 573 and 673 K. to study the effect of annealing. The rectifying behavior of the irradiated (fluence of 1 × 10¹² ions/cm¹²) SBDs improves upon as the annealing temperature increases and is attributed to the in situ self-annealing during irradiation. Scanning Electron Microscopic analysis was carried out on the irradiated samples to delineate the projected range and to observe defects.