溶胶凝胶燃烧合成法制备Y_2O_3∶RE(RE=Er或Er/Yb)上转换发光材料

采用溶胶凝胶燃烧合成法制备了稀土掺杂Y2O3粉体,考察了煅烧温度、Er3+浓度和Yb3+浓度对粉体发光性能的影响。研究结果表明,在800℃的温度下可以得到结晶良好的单相Y2O3粉体;随着煅烧温度的升高,样品结晶度越高,其上转换发光强度变强;在900℃的煅烧温度下,样品的粒径大约为lμm左右,颗粒尺寸分布较均匀;当Er3+掺杂浓度达到1mol%时,绿光发射强度达到最大值,而对于红光发射,其发射强度的最大值出现在4mol%的掺杂浓度;当Yb3+与Er3+掺杂比例达到4:1时,绿光发射强度达到最大值,而红光发射强度随着Yb3+浓度的增加一直增强。     

Growth and spectroscopic properties of RE, Mn:YAP (RE=Yb and Ce) photorefractive crystals

RE, Mn:YAP (RE=Yb and Ce) crystals with dimension of Φ 25×60 mm were successfully grown by the Czochralski method. The spectroscopic properties of RE, Mn:YAP (RE=Yb and Ce) crystals before and after γ-irradiation were investigated at room temperature. The results show that the content of Mn⁴⁺ ions was increased with the Yb³⁺ ions co-doping, but decreased by Ce³⁺ ions co-doping. Thermoluminescence (TL) spectra of the crystals indicate three steps of recombination, and the probable recombination processes were discussed.     

+3价离子掺杂钨酸铅晶体发光性能和微观缺陷的研究

通过透射光谱、x射线激发发射光谱（XSL）的测试，研究了Bridgman法生长的几种不同+3价离子掺杂钨酸铅晶体的发光性能，并利用正电子湮没寿命谱（PAT）和x光电子能谱（XPS）的实验手段，对不同钨酸铅晶体的微观缺陷进行研究.实验表明，不同的+3价离子掺杂，对钨酸铅晶体发光性能的改善不同，并使得晶体中正电子俘获中心和低价氧的浓度发生不同变化.其中掺镧晶体的正电子俘获中心和低价氧浓度均上升，而掺钇和掺铋晶体的正电子俘获中心和低价氧浓度均下降，掺锑晶体则出现了正电子俘获中心浓度上升、低价氧浓度下降的情况.提 关键词： 钨酸铅晶体 +3价离子掺杂 正电子湮没寿命谱 x光电子能谱     

Investigation of up-conversion luminescence properties of RE/Yb co-doped Y2O3 transparent ceramic (RE=Er, Ho, Pr, and Tm)

RE/Yb co-doped Y₂O₃ transparent ceramics (RE=Er, Ho, Pr, Tm) were fabricated and characterized from the point of up-conversion luminescence. All the samples exhibit high transparence not only in near-infrared band (NIR) band but also in visible region, which ensures the output of the up-conversion luminescence. Under 980 nm excitation, green and red emissions were observed in Er, Yb:Y₂O₃ transparent ceramic, while green emission was detected in Ho, Yb and Pr, Yb co-doped Y₂O₃ transparent ceramics. In Tm, Yb co-doped Y₂O₃ ceramic, very intense blue up-conversion luminescence was detected. The dependence of up-conversion emission intensity on the pumping power was measured for each RE/Yb co-doped Y₂O₃ transparent ceramic, and the up-conversion mechanism was discussed in detail. Meanwhile, the energy transfer efficiency was calculated.     

Influence of Gamma-Ray Irradiation on Absorption and Fluorescent Spectra of Nd：YAG and Yb：YAG Laser Crystals

We investigate the influence of gamma-ray irradiation on the absorption and fluorescent spectra of Nd^3＋：Y3A15 O12 （Nd： YAG） and Yb^3＋ ： Y3A15 O12 （Yb： YAG） crystals grown by the Czochralski method. Two additional absorption （AA） bands induced by gamma-ray irradiation appear at 255nm and 340nm. The former is contributed due to Fe^3＋ impurity, the latter is due to Fe^2＋ ions and F-type colour centres. The intensity of the excitation and emission spectra as well as the fluorescent lifetime of Nd：YAG crystal decrease after the irradiation of 100 Mrad gamma-ray. In contrast, the same dose irradiation does not impair the fluorescent properties of Yb：YAG crystal. These results indicate that Yb： YA G crystal possesses the advantage over Nd： YA G crystal that has better reliability for applications in harsh radiant environment.     

Synthesis and photoluminescence characteristics of doped ZnS nanoparticles

Free-standing powders of doped ZnS nanoparticles have been synthesized by using a chemical co-precipitation of Zn²⁺, Mn²⁺, Cu²⁺ and Cd²⁺ with sulfur ions in aqueous solution. X-ray diffraction analysis shows that the diameter of the particles is ∼2–3 nm. The unique luminescence properties, such as the strength (its intensity is about 12 times that of ZnS nanoparticles) and stability of the visible-light emission, were observed from ZnS nanoparticles co-doped with Cu²⁺ and Mn²⁺. The nanoparticles could be doped with copper and manganese during the synthesis without altering the X-ray diffraction pattern. However, doping shifts the luminescence to 520–540 nm in the case of co-doping with Cu²⁺ and Mn²⁺. Doping also results in a blue shift on the excitation wavelength. In Cd²⁺-doped ZnS nanometer-scale particles, the fluorescence spectra show a red shift in the emission wavelength (ranging from 450 nm to 620 nm). Also a relatively broad emission (ranging from blue to yellow) has been observed. The results strongly suggest that doped ZnS nanocrystals, especially two kinds of transition metal-activated ZnS nanoparticles, form a new class of luminescent materials. Received: 16 October 2000 / Accepted: 17 October 2000 / Published online: 23 May 2001     

F,Y双掺钨酸铅晶体的发光性能和微观缺陷

通过透射光谱、光产额(LY)和光致发光等发光性能测试，研究了F,Y双掺钨酸铅(PbWO₄ ，简称PWO)晶体的发光性能，并利用热释光曲线和正电子湮没寿命谱对F,Y双掺PWO晶 体中的缺陷种类和变化进行了分析. 结果表明：与未掺杂晶体相比，双掺样品在350nm附近 的透过率大大提高，吸收边向短波方向移动约30nm，光致发光谱中出现位于350nm的发光峰 ，双掺样品的LY(100ns内)为未掺杂PWO的2.7倍左右.晶体中主要存在的缺陷为(WO_{3)^{-关键词： F Y双掺钨酸铅闪烁晶体 高光产额 热释光 正电子湮没寿命谱}}     

Radioluminescence spectra of PWO crystals (co)doped by Ba

The influence of Ba (co)doping of PWO samples on the radioluminescence intensities has been tested. The codoping of the PWO:Mo,Nb crystals by Ba can increase markedly the intensities of the green luminescence, but only under the condition that the Ba concentrations fall into a limited concentration region. The green luminescence was also found in the PWO crystals doped only by Ba, and in the PWO crystals grown from melts with surplus of tungsten oxide. In the case of PWO:Mo,Ba crystals the increase of radioluminescence intensities with Ba concentrations is tentatively connected with inner stress caused by the difference in the size of Ba and Pb ions.     

Yb:YAG晶体的合作发光现象

研究了Yb：YAG晶体的合作发光现象。当用940nm的近红外光激发时,Yb:YAG晶体有明显的上转换蓝色发光。实验发现498 nm的蓝色发光强度与激发功率的平方成正比,而且Yb3+掺杂浓度越高,蓝色发光越强。分析表明这是Yb3+间强的相互作用导致的合作发光,是由于Yb3+在共价性的YAG基质中,它的4f13电子易于与近邻离子发生相互作用导致的。     

The excitation mechanism of rare-earth ions in silicon nanocrystals

A detailed investigation on the excitation mechanisms of rare-earth (RE) ions introduced in Si nanocrystals (nc) is reported. Silicon nanocrystals were produced by high-dose 80-keV Si implantation in thermally grown SiO₂ followed by 1100 °C annealing for 1 h. Subsequently some of the samples were implanted by 300-keV Er, Yb, Nd, or Tm at doses in the range 2×10¹²–3×10¹⁵ /cm². The energy was chosen in such a way to locate the RE ions at the same depth where nanocrystals are. Finally an annealing at 900 °C for 5 min was performed in order to eliminate the implantation damage. These samples show intense room-temperature luminescence due to internal 4f shell transitions within the RE ions. For instance, luminescence at 1.54 μm and 0.98 μm is observed in Er-doped nc, at 0.98 μm in Yb-doped nc, at 0.92 μm in nc and two lines at 0.78 μm and 1.65 μm in Tm-doped nc. Furthermore, these signals are much more intense than those observed when RE ions are introduced in pure SiO₂ in the absence of nanocrystals, demonstrating the important role of nanocrystals in efficiently exciting the REs. It is shown that the intense nc-related luminescence at around 0.85 μm decreases with increasing RE concentration and the energy is preferentially transferred from excitons in the nc to the RE ions which, subsequently, emit radiatively. The exact mechanism of energy transfer has been studied in detail by excitation spectroscopy measurements and time-resolved photoluminescence. On the basis of the obtained results a plausible phenomenological model for the energy transfer mechanism emerges. The pumping laser generates excitons within the Si nanocrystals. Excitons confined in the nc can either give their energy to an intrinsic luminescent center emitting at around 0.85 μm nor pass this energy to the RE 4f shell, thus exciting the ion. The shape of the luminescence spectra suggests that excited rare-earth ions are not incorporated within the nanocrystals and the energy is transferred at a distance while they are embedded within SiO₂. Rare-earth excitation can quantitatively be described by an effective cross section σ_eff taking into account all the intermediate steps leading to excitation. We have directly measured σ_eff for Er in Si nc obtaining a value of ≈2×10⁻¹⁷ cm². This value is much higher than the cross section for excitation through direct photon absorption (8×10⁻²¹ cm²) demonstrating that this process is extremely efficient. Furthermore, the non-radiative decay processes typically limiting rare-earth luminescence in Si (namely back-transfer and Auger) are demonstrated to be absent in Si nc further improving the overall efficiency of the process. These data are reported and their implications. Received: 9 April 1999 / Accepted: 10 April 1999 / Published online: 2 June 1999     

稀土Tb3+掺杂纳米ZnO的发光性质

ZnO是一种优良的直接宽带隙半导体发光材料(Eg=3.4 eV),具有优异的晶格、光学和电学性质,稀土离子掺杂浓度和热处理温度对ZnO∶Re3 纳米晶发光强度、峰位变化等光学性质具有重要影响.利用溶胶-凝胶法(Sol-Gel),在不同退火温度下,制备了不同浓度的ZnO∶Tb3 纳米晶.室温下,测量了样品的X射线衍射谱(XRD)、光致发光谱(PL)和激发谱(PLE).观察到纳米ZnO基质在520 nm附近宽的绿光可见发射和稀土Tb3 在485,544,584和620 nm附近的特征发射.通过ZnO基质可见发射强度和稀土Tb3 特征发射强度随Tb3 掺杂浓度、退火温度的变化关系,获得了5D4→7F5跃迁的绿色主发射峰最强的样品制备工艺参数,其退火温度为600℃、掺杂浓度为4 at%;给出了稀土Tb3 的激发态5D4→7F6(485 nm),5D4→7F5(544 nm)和5D4→7F4(584 nm)的发射机制;证实了稀土Tb3 与纳米ZnO基质之间存在双向能量传递.     

掺Sb对PbWO_4晶体发光性能的改善

首次报道了ＰｂＷＯ４：Ｓｂ的光谱特性,包括透射谱和Ｘｅ灯光源激发的发射谱与激发谱．掺Ｓｂ具有增强绿光带、抑制红光带并大幅度提高光产额的效果．通过与空气退火ＰＷＯ发光的比较,对绿光带的起因、Ｓｂ掺杂的作用也进行了简要的讨论．     

Luminescence Spectra of YGG：RE^3＋, Bi^3＋ （RE = Eu and Tb） and Energy Transfer from Bi^3＋ to RE^3＋

We investigate the luminescence properties of Bi^3＋ and RE^3＋ （RE = Tb or Eu） in a Y3Ga5O12 （YGG） host system. The additional doping of Bi^3＋ can enhance the luminescence of Th^3＋ or Eu^3＋ in this host. Energy transfer from Bi^3＋ to Tb^3＋ and Eu^3＋ is observed and the mechanism of energy transfer is investigated. Mechanism of energy transfer can be explained as electric multipole interaction since the Bi^3＋ emission band and Tb^3＋ or Eu^3＋ excitation band overlaps and the Bi^3＋ emission intensity decreases while the intensity of Tb^3＋ or Eu^3＋ increases with the increase of Tb^3＋ or Eu^3＋ concentration. Therefore, Bi^3＋ ion is a kind of efficient sensitizer to the Tb^3＋ and Eu^3＋ activators in the Y3Ga5O12 host.     

Properties of hexagonal Al2Ge2RE (RE=Y,La,Ce,Nd,Eu,Gd,Tb,Y b and Lu) : A first-principles study

In this work, we present a study of the structural, elastic and electronic properties of the Al₂Ge₂RE (RE=Y, La, Ce, Nd, Eu, Gd, Tb, Yb and Lu) through the approaches of generalized gradient approximation (GGA) and local spin density approximation with the Hubbard energy (LSDA+U) based on density-functional theory. For most of the compounds (RE=Y, La, Ce, Nd, Eu, Yb and Lu), the results of the structural constants calculated from the approach of LSDA+U are in good agreement with the reported experimental data. Both the approaches of GGA and LSDA+U have been used to calculate DOS. Compared with the results of the GGA approach, the LSDA+U is more credible because it can show the influence of RE-f states and the RE-f states play an important role in the compound. The magnetic property has been investigated according to the result of DOS and it shows that the Al₂Ge₂Y, Al₂Ge₂La, Al₂Ge₂Y b and Al₂Ge₂Lu do not exhibit obvious magnetic property, while the other five ternary compounds are magnetic. The Voigt-Reuss-Hill (VRH) approach is used to calculate the elastic properties including bulk and shear moduli. The results of the calculated Poisson’s ratio ν and the B/G ratio demonstrate that all the Al₂Ge₂RE ternary compounds are brittle materials. The compounds, i.e. Al₂Ge₂Nd, Al₂Ge₂Eu, Al₂Ge₂Gd and Al₂Ge₂Tb which are mechanically unstable, display differences with the other five in the elastic properties.     

Mechanism of Th, Zr doping in PbWO4 crystals

To check the doping mechanism of trivalent ion doping in PbWO₄ (PWO) and verify the formation of dipoles [2M_Pb³⁺-V_Pb], the researches on an investigation of tetravalent ion (Th⁴⁺, Zr⁴⁺) doped PWO was conducted by dielectric loss spectroscopy, thermoluminescence and optical absorption spectroscopy. The doping mechanism of tetravalent ion doping is similar to that of trivalent ion doping, while the dipole defects should be formed more easily due to the convenience for the two defects V_Pb and M_Pb⁴⁺ to get close to each other. However, in the case of Zr⁴⁺ doping, Zr was found to enter interstitial sites because of its small ionic radius, with the introduced charges compensated by V_Pb far away and hence does not exert an obvious influence on the performance of this material. Thus, no dielectric relaxation was found in the DS (dielectric spectra) experiment.     

Er3+-Yb3+-Tm3+共掺CdF2:PbF2基玻璃中的荧光特性及其上转换机制

在 98 0nm半导体激光激发下 ,在Er3 Yb3 Tm3 共掺玻璃样品中得到了如下的 5条较强的上转换荧光带 ,分别是近红外 (80 0nm) ,红 (6 4 5nm) ,绿 (5 4 5和 5 2 5nm) ,蓝 (4 80nm)及紫 (4 0 7nm)。与Er3 Yb3 共掺样品相比 ,Tm3 的加入使得 4 80nm的蓝光显著增强 ,这应与Tm3 特殊的能级结构有关 ;荧光强度随激发功率变化的双对数曲线表明 4 80nm蓝光发射是双光子激发过程 ,为两个Yb3 的合作上转换敏化发光 ,随着激发功率的增加 ,4 80nm荧光的logI logP曲线的斜率将变小 ,逐渐向下“弯曲”。作者详细的分析了各条荧光带的上转换机制 ;并用速率方程讨论了稳态情况下 4 80nm蓝色上转换荧光强度随激发功率变化的关系 ,其结果与实验一致。     

稀土配合物RE(TPTZ)Cl_3的合成、表征及荧光性能研究

首次以2,4,6-三吡啶基三嗪（TPTZ）与Sm, Eu, Tb和Dy氯化物反应,合成四种单一稀土配合物以及Tb分别1∶1掺Gd, Y, La的三种异核配合物。经元素分析、稀土络合滴定、摩尔电导率、红外光谱、紫外光谱和差热-热重测定表明,配合物的组成分别为RE（TPTZ）Cl3·3H2O（RE=Sm, Eu, Tb, Dy）和Tb0.5Ln0.5（TPTZ）Cl3·3H2O（Ln=Gd, Y, La）;TPTZ作为三齿配体与稀土离子配位,即中心环提供一个N原子,两个吡啶环分别提供一个N原子;配合物中3个水分子与稀土离子配位,1个Cl-在外界,2个在内界,为1∶1型电解质;配合物内外界可能为[RE（TPTZ）（H2O）3Cl2] Cl,稀土离子的配位数为8。配合物的荧光光谱测试表明,四种单一稀土配合物中,Tb配合物发光最强;三种1∶1掺杂异核Tb配合物荧光强度大于纯Tb配合物,表明Y3＋, La3＋和Gd3＋都可以敏化Tb3＋的发光,其中Gd3＋的敏化作用最强,Y3＋次之,La3＋最差。     

La在La:PWO闪烁晶体中的作用机制探讨

根据掺La的PWO晶体(LaPWO晶体)的透射光谱和发射光谱随La浓度的变化特性及其电子顺磁共振(EPR)谱,作者认为,掺La使晶体产生了新的以(LaPb)2/3(VPb)1/3WO4为主的缺陷,LaPWO晶体的透光性能的改善主要是由于Pb空位(VPb)"的增加.而发光性能的降低则主要是(LaPb)和(VPb)"的共同作用.     

Enhanced Up-Conversion Emission in Al<Superscript>3+</Superscript> Co-Doped ZnGa<Subscript>2</Subscript>O<Subscript>4</Subscript>:Yb<Superscript>3+</Superscript>,Tm<Superscript>3+</Superscript> Powder Phosphors

Yb³⁺-Tm³⁺ co-doped up-conversion powder phosphors using Zn(Al_xGa_1-x)₂O₄ (ZAGO) as the host materials were synthesized via solid-state reaction successfully. In addition, the morphology, structural characterization and up-conversion luminescent properties were all investigated by scanning electron microscope (SEM), x-ray diffraction (XRD) and fluorescence spectrophotometer (F-7000), respectively. Under the excitation of a 980 nm laser, all as-prepared powders can carry out blue emission at about 477 nm (corresponding to ¹G₄ → ³H₆ transition of Tm³⁺ ions), and red emission at about 691 nm (attributed to ³F₃ → ³H₆ transition of Tm³⁺ ions). Also, the influence of doping Al³⁺ ions were investigated. In brief, the doping of Al³⁺ ions has no effect on the position of emission peak. Howbeit the up-conversion efficiency and intensity of ZAGO:Yb,Tm phosphors are stronger than ZGO:Yb,Tm and ZAO:Yb,Tm phosphors, while the crystallinity is the opposite. More particularly, all as-prepared powder phosphors emit strong luminescence, which is observable by the naked eye, demonstrating the potential applications in luminous paint, luminescent dye, etc.     

Yb3+离子掺杂浓度对Yb∶YAG晶体发光及荧光寿命的影响

研究了不同掺杂浓度Yb∶YAG晶体的发光特性和荧光寿命.Yb3+在YAG晶体中的掺杂浓度分别为5at%、10at%、20at%、30at%.Yb3+离子掺杂浓度越高，Yb∶YAG晶体的吸收系数越大.采用940 nm波长的LD泵浦源和TRIA X550荧光谱仪，对这一系列掺有不同浓度Yb3+的Yb∶YAG晶体进行了荧光光谱的测定.结果表明:在1030 nm主发光波段的荧光强度以10at%Yb∶YAG的为最强.同时发现它在450 nm-680 nm波段有明显的可见发光，其强度随Yb3+掺杂浓度的增加而迅速地增强.Yb∶YAG晶体的荧光寿命存在浓度猝灭现象，对猝灭机制进行了分析研究，指出浓度猝灭的主要原因是合作发光和痕量稀土离子的上转换发光.