溅射硒化物靶与金属单质靶制备Cu2 ZnSnSe4薄膜及电池的比较研究

采用磁控溅射SnSe-ZnSe-Cu硒化物靶和Sn-Zn-Cu金属单质靶的方法制备两种Cu2 ZnSnSe4(CZTSe)预制层,并将两种预制层采用相同的硒化工艺制备出CZTSe薄膜吸收层.分别采用XRD、Raman、SEM、EDS等分析了薄膜的晶体结构、相的纯度、表面及截面形貌和元素组分,结果发现采用硒化物靶制备的CZTSe吸收层薄膜更为平整致密且无明显孔洞.同时采用Hall测试和J-V测试对太阳电池薄膜的电学性质进行了表征,结果表明硒化物靶制备的CZTSe太阳电池的电流密度以及光电转化效率要高于金属单质靶,金属单质靶制备的CZTSe薄膜电池的开路电压为356 mV,短路电流密度为20.61 mA/cm2,光电转换效率为2.18;,而硒化物靶制备的CZTSe薄膜电池的开路电压为354 mV,短路电流密度为28.41 mA/cm2,光电转换效率为3.33;.     

Y2O3/ZrO2复合泡沫陶瓷烧结的初步研究

本文采用有机泡沫浸渍法制备了Y2O3/ZrO2双层复合、Y2O3/Y2O3-ZrO2/ZrO2三层复合及Y2O3和ZrO2单相泡沫陶瓷,分析了两种复合泡沫陶瓷层间的结合及各层显微结构随烧结温度的变化,并与单相氧化物陶瓷进行了对比。结果表明:双层复合陶瓷层间有较大缝隙,这是因为两种氧化物陶瓷烧结不同步造成的。三层复合陶瓷中Y2O3-ZrO2混合中间层的存在减弱了Y2O3、ZrO2烧结不同步引起的层间应力,层间结合明显改善,并大大减少了泡沫陶瓷表面宏观裂纹。两种复合陶瓷的ZrO2内层的烧结程度都低于单相ZrO2,这主要是因为先于ZrO2烧结的Y2O3外层阻碍了内部气体的排出从而阻碍ZrO2的烧结所致。     

ZL101A铝合金微弧氧化纳米陶瓷涂层的腐蚀行为研究

本文通过在硅酸盐电解液中加入纳米TiO2添加剂,研究了在NaCl溶液中长时间浸泡后,ZL101A铸造铝合金微弧氧化陶瓷涂层的腐蚀行为.结果表明,微弧氧化涂层可以在一定程度上保护基体不被腐蚀,电解液中加入纳米TiO2添加剂后,不但填补部分疏松层的孔洞,也增加了致密层的厚度,有效阻挡了Cl-对基体的直接侵入.     

基于一维光子晶体的Tamm态耦合实现可调双频滤波器

设计一个金属层-DBR-金属层的结构,研究两个相同光学Tamm态的耦合形成的耦合模式的特性.通过传输矩阵法,得出电磁波入射的透射谱.透射谱上有一对间距很小的孪生耦合透射峰.基于这对耦合模式可以实现可调双频窄带滤波器,其通带的位置和间距可以通过改变中间层的一维光子晶体的层数或者改变入射波的入射角度来调节.     

激光烧蚀硅靶下荷电粒子和纳米晶粒的电流响应研究

采用波长为308 nm的XeCl脉冲准分子激光器,在5～50 Pa的Ar气压下烧蚀高阻抗单晶硅(Si)靶.在烧蚀点正前方、距靶1.5 cm处放置一个中心开孔直径为2 mm的挡板,挡板后面上下对称放置两个极板,然后串联一个标准电阻接地,电阻大小为10 Ω,利用高分辨数字存储示波器记录并测量回路中产生的瞬间电流来研究荷电粒子和纳米晶粒的电流响应.实验结果表明烧蚀产物中的正离子在气压为5 Pa时到达极板上数量最多.纳米Si晶粒带正电并且随着气压的增加纳米Si晶粒下落到极板的数量呈现先增大后减小趋势,在气压为8 Pa时达到最大值,这与扫描电子显微镜的测量结果基本一致.所得结果为进一步研究烧蚀粒子在环境气体中的输运动力学过程提供了依据.     

物理所等铁基磷族化合物超导体高压研究获进展

<正>Ca10(PtnAs8)(Fe2As2)5(n=3,4)是一种新型的具有复杂结构的铁基磷族化合物超导体,其晶体结构可描述为在CaFe2As2晶格中交替用PtnAs8中间层(被成为方钴矿层)来置换Fe2As2层,即在一个晶胞中以CaPtnAs8-Ca-Fe2As2复杂的层状形式堆垛而成。这类化合物有两类不同的中间层,其相应的物理性能也明显不同当中间层为时,未掺杂的()()化合物为反铁磁半导体,用部份替代其     

SiC陶瓷在钎焊过程中的6H到3C多型相变（英文）

为探究钎焊过程对SiC陶瓷晶体结构的影响，为钎焊工艺设计提供理论及试验数据支撑，本研究采用纯Ni箔作为中间层在1 100～1 245℃下实现了6H-SiC的钎焊连接，并研究了焊缝以及6H-SiC基体与焊缝界面处的微观形貌。研究结果表明，少量Ni原子在钎焊过程中会扩散进入6H-SiC陶瓷，并以固溶形式存在，降低了6H-SiC层错能。随着钎焊温度升高，6H-SiC/焊缝界面处的焊后残余应力增大，当钎焊温度达到1 245℃时，界面处的6H-SiC的(0001)面沿■方向产生滑移，6H-SiC切变形成3C-SiC。因此，SiC陶瓷在钎焊过程中受应力和钎料组成元素的作用发生相变，针对特殊环境使用的SiC陶瓷需要斟酌钎焊工艺对其晶体结构及性能的影响。     

La1-xCaxMnO3陶瓷的导电性和磁性研究

采用固相反应法制备了含钙量介于15～50;的La1-xCaxMnO3系列多晶陶瓷;在78～300K温度范围内测量了这些陶瓷的电阻-温度曲线,从而确定陶瓷的最佳组分为La0.67Ca0.33MnO3;测量了La0.67Ca0.33MnO3陶瓷的磁化曲线,确定其居里温度位于265K附近.在此基础上,制备了掺Ag量为2～15;质量分数的La0.67Ca0.33MnO3系列陶瓷;通过对比这些陶瓷的电阻随温度的变化关系,确定最佳掺Ag量为4;质量分数,掺Ag量为4;质量分数陶瓷的磁电阻比未掺Ag时有大幅度提高.X射线衍射分析和扫描电镜观察结果表明:Ag掺入La0.67Ca0.33MnO3陶瓷后,并未进入晶格,而是进入晶粒间界和孔洞.对La0.67Ca0.33MnO3陶瓷掺Ag改性机理进行了初步分析.     

3D型冷阴极结构形态对场发射影响研究

通过在圆铜片上用导电银胶固定圆柱体和长方体形成3D型冷阴极,采用有限元分析软件ANSYS仿真分析了圆柱体和长方体上表面的电场分布,圆柱体直径为12.7 mm,长方体阴极上表面为正方形,边长为12.7 mm.两种阴极高度相同,采用化学气相沉积法(CVD),以酞菁铁(FePc)为催化剂,在圆柱体和长方体上表面合成了碳纳米管薄膜(CNTs),合成的碳纳米管形貌由场发射扫描电镜(FESEM)进行表征,采用二极管结构,以涂有荧光粉的ITO导电玻璃作为阳极,在真空室中真空度为2×10-4 Pa测设了两种3D型冷阴极的场发射特性,结果表明,随着两种阴极场强最大值比值增大,长方体阴极的场发射性能优于圆柱体阴极.     

CVD金刚石薄膜表面的缺陷研究

用SEM方法观察分析了CVD金刚石薄膜表面的缺陷形貌和结构,直观的两种缺陷为孪晶和孔洞.孪晶反映了晶粒的不完整性,它的产生取决于气相中活性分子的浓度与生长表面活性位数目的比值,孪晶比率随碳源浓度升高和衬底温度的降低而增大;孔洞反映了膜的不致密性,其产生与膜生长速率和衬底表面初始成核密度切相关,孔洞密度随碳源浓度升高和衬底温度的升高而增大.     

微波等离子化学气相沉积金刚石膜涂层氮化硅刀具

金刚石的成核和生长影响金刚石膜的质量.本文用自制的一种新型的不锈钢谐振腔型微波等离子CVD设备,等离子直径为76mm,均匀的温度分布使得金刚石膜均匀生长,在不同工艺条件下研究Si3N4陶瓷刀具上金刚石涂层的成核质量,用SEM,Raman检测和分析研究了在Si3N4刀具上高速高质量生长金刚石膜涂层的制备工艺,并检测了涂层刀具的切削性能,切削试验表明,在切削18wt;Si-Al合金时,金刚石涂层刀具比未涂层刀具的使用寿命增多10倍以上.     

透明尖晶石陶瓷的研究进展

透明尖晶石陶瓷材料由于具有陶瓷的耐高温、耐腐蚀、耐磨损、抗冲击、高硬度、高强度、良好的电绝缘性能特点,而且还具有白宝石单晶体相近的光学性能,在紫外、可见光、红外光波段具有良好的光学透过率,使其在透明装甲、窗口和头罩材料的应用受到重视。本文综合国内外的一些研究成果,简要介绍了透明尖晶石陶瓷的性能、研制生产和应用开发情况。     

Formation and properties of Fe-based amorphous/nanocrystalline alloy coating prepared by wire arc spraying process

Wire arc spraying process was used to deposit FeBSiCrNbMnY amorphous/nanocrystalline alloy coating onto stainless steel substrate. The microstructure of the coating was characterized by using X-ray diffraction (XRD), scanning election microscopy (SEM) equipped with energy dispersive X-ray analysis (EDXA) and transmission electron microscopy (TEM). The coating is about 500 μm in thickness with fully dense and low porosity. The microstructure of the coating is classified into two regions, namely, a full amorphous phase region and homogeneous dispersion of α Fe, Cr nanoscale particles with a scale of 30–60 nm in a residual amorphous matrix region. The formation mechanism of the amorphous and nanocrystalline alloy was discussed. Mechanical properties, such as microhardness and wear resistance of the coating were also analyzed. The Vickers hardness of the coating is around Hv = 900–1050. The relatively wear resistance of the amorphous/nanocrystalline alloy coating is about 3× than that of crystalline structure 3Cr13 martensite stainless steel coating under the same wear testing condition. The FeBSiCrNbMnY amorphous/nanocrystalline alloy coating has high microhardness and excellent wear resistance.     

微弧氧化陶瓷膜封孔后处理及抗高温氧化性能的研究

在铝酸盐体系中,利用微等离体氧化脉冲电源在Ti-6Al-4V合金表面制备了以Al2TiO5为主晶相的陶瓷膜层,然后采用钛酸四丁酯/乙醇和硅酸钠溶液的封孔方法对微弧氧化陶瓷膜进行封孔后处理。通过SEM及高温氧化测试,分析比较了陶瓷膜层在封孔前后的表面形貌以及抗高温氧化性能的变化情况。结果表明:封孔后膜层孔洞明显变小。经700℃高温氧化测试,采用钛酸四丁酯/乙醇溶液封孔方法不仅没有带来抗高温氧化性能的提高反而下降,而硅酸钠溶液的封孔方法提高了抗高温氧化性能。     

衬底对沉积碳纳米管薄膜的影响

利用微波等离子体化学气相沉积(MPCVD)方法,分别在不锈钢衬底上和刻线的镍膜上直接沉积了碳纳米管膜。通过SEM、拉曼光谱和XRD表征,讨论了不同衬底对碳纳米管膜生长的影响。结果表明:在一定条件下,可在镍膜上沉积垂直于衬底的高度取向的碳纳米管,但在不锈钢衬底上却长出取向无序的碳纳米管膜,这说明衬底对碳纳米管的取向生长起着关键作用。     

铝合金表面复合陶瓷防火涂层的制备及性能研究

以无机胶粘剂及陶瓷粉体为原料,制备用于地铁内饰的铝合金板表面阻燃陶瓷涂层.研究了胶粘剂、无机阻燃剂的加入量及料浆粒度与涂层致密度的关系.按照饰面型防火涂料的国家标准(GB12441-2005)和材料非燃性的英国标准(BS476-4)对涂层的理化性能进行检测.结果表明:当粘结剂的用量为60;、添加剂粒度为1～2 μm时,涂层表面均匀、致密、无缩孔.所制备的陶瓷涂层均达到上述标准.涂层的耐火极限高于30 min,不燃,不脱落,无烟,不产生有毒的气体,具有很好的防火阻燃作用.     

Preparation of Ge-Si epitaxial alloys by sputtering

Ge-Si alloy layers have been epitaxially grown throughout the whole range of composition onto Ge substrates by the simultaneous getter sputtering from elemental Ge and Si sources. The epitaxial temperature was 550 to 830° C at growth rates of about 1 μm/h, depending on the Si atomic fraction in the range of 0.05 to 0.88. As the Si content in the alloy increases, the crystallinity of the layer decreases: Si-rich alloy layers contained microtwins. Hall measurements of alloy layers without intentional doping indicated p-type conductivity with Hall mobility of 600 cm²/V·sec at carrier concentration of 2 × 10¹⁶ cm^-3 for 25 at% Si in the alloy at room temperature. The observed temperature dependence of the hole mobility is indicative of alloy scattering.     

Anisotrope Längenänderungen bei spannungs- und verformungsinduzierter martensitischer Gitterumwandlung kubisch-flächenzentriert → hexagonal

With the elastic and plastic deformation of the steel X8Mn16, respectively, a stress or deformation induced transformation of the fcc γ-matrix lattice into the hex. ϵ-martensite occurs, being connected with anisotropic changes in length, and leading to a decrease of the apparent elastic modulus of the alloy. A further investigation shows it is obviously the question of the result of the strain-memory effect, until now not yet being observed with iron alloys. Similar anisotropic changes in length can be taken into account with all pure metals and alloys, the martensitic transformation of which turns out under the influence of an outer uniaxial stress.     

The effect of solute supersaturation on the ageing process of an Al 59,5 wt% zn alloy

The effect of the solution treatment temperature on the mechanism of the decomposition at room temperature of an quenched Al 59,5 wt.-% Zn alloy has been examined. The investigations were carried out using X-ray techniques, optical and transmission electron microscopy and measuring the changes in the dimensions, electrical resistivity and the hardness. The sequence of the phase transformations in the alloy quenched from 370°C were as follows. The transformation begins with spinodal decomposition. After some development of the spinodal structure, which is associated with increase in wavelength, the heterogenuous nucleation and growth of the zinc-rich particles occur within the spinodal structure. Simultaneously the discontinuous transformation was observed to grow into the spinodal structure. The decomposition of the same alloy quenched from 300°C (miscibility gap region) took place much more rapidly than when quenched from 370°C. Directly after quenching the spinodal structure was also observed using JEM-1000, coincidental with a remarkable increase of electrical resitivity. At the same time the heterogenuous nucleation and growth of the zinc particles, on the interfaces of the α-α′ phases was observed. The discontinuous transformation was also found within the α′ supercooled phase. The decomposition of the Al 38 at.-% Zn alloy quenched from 300°C appeared to be divided into two stages. In the first the decomposition of the zinc-rich α′ phase takes place and in the second one the transformation of the zinc-poor a phase occurs. These two transformations are distinctly marked on the curves of the changes in the dimensions, electrical resistivity as well as in the intensity of the (101) reflexion of the zinc phase.     

A novel polymer-derived high-temperature SiC/SiAlCN nanocrystalline glass ceramic

A polymer alloy (CA) composed of polycarbosilane (PCS) and polyaluminasilazane (PASZ) was used as precursor for polymer-derived ceramics. Due to the difference in crystallization behavior between PCS-derived and PASZ-derived ceramics, a novel non-oxide SiC/SiAlCN nanocrystalline glass ceramic was successfully fabricated via in situ crystallization of the PCS domain in CA. Ceramic yield of the CA, which was up to 89.9% at 1000 °C, was very high because of interaction between PCS and PASZ during pyrolysis. Micro-morphology of the novel glass ceramic indicated that nanocrystalline SiC was uniformly dispersed in an amorphous phase. The SiC/SiAlCN nanocrystalline glass ceramic may be a high-performance potential material for use in high temperature environments.