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1.
    
Nano‐multilayers of Cu(6 nm)/Co(∼22 nm) have been electrodeposited in potentiostatic pulse mode on ITO coated glass substrates. Cyclic voltammetry and chronoamperometric studies were performed to determine the potential and duration for the deposition of individual layers. A 50‐bilayer stack exhibited a room temperature GMR of 12.5%, at 8 kOe. Even at low fields of ∼3 kOe, this multilayer exhibited ∼10% GMR, thereby demonstrating the potential application of electrodeposition (ED) process in achieving appreciable value of GMR at room temperature and at lower field values. The observed high value of GMR at room temperature may be attributed to the antiferromagnetically (AF) aligned magnetic layers in the absence of magnetic field. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

2.
The magnetization reversal of electrodeposited CoNi/Cu multilayer nanowires patterned in an array using a hole template has been investigated. The reversal mode is found to depend on the CoNi layer thickness t(CoNi); with increasing t(CoNi) a transition occurs from coherent rotation to a combination of coherent and incoherent rotation at around t(CoNi)=51 nm. The reversal mode has been identified using the magnetic hysteresis loops measured at room temperature for CoNi/Cu nanowires placed at various angles between the directions of the nanowire axis and external fields using a vibrating sample magnetometer. The nanowire samples have a diameter of ∼250 nm and constant Cu layer thickness of 4.2 nm with various t(CoNi) ranging from 6.8 nm to 7.5 μm. With increasing t(CoNi), the magnetic easy axis moves from the direction perpendicular to nanowires to that parallel to the nanowires at around t(CoNi)=51 nm, indicating a change in the magnetization reversal mode. The reversal mode for the nanowires with thin disk-shaped CoNi layers (t(CoNi)=6.8, 12 and 17 nm) is of a coherent rotation type, while that for long rod-shaped CoNi layers (t(CoNi)=150 nm, 1.0, 2.5 and 7.5 μm) can be consistently explained by a combination of coherent rotation and a curling mode. The effects of dipole–dipole interactions between nanowires and between adjacent magnetic layers in each nanowire on the reversal process have been discussed.  相似文献   

3.
The present work discusses the successful electrodeposition of Cu/Co multilayers, exhibiting appreciable GMR of 12-14% at room temperature. The effect of individual Cu and Co layers on the magnitude and behavior of GMR has been studied. By varying the thickness of individual layers the field at which saturation in GMR is observed can be controlled. It was observed that for lower thicknesses of Co layer, the saturation fields are reduced below 1 kOe. The Cu layer thickness seems to control the nature of magnetic coupling and the saturation field, with the two showing a correlation.  相似文献   

4.
    
In this contribution the influence of annealing on magnetization reversal and on the giant magnetoresistance effect of [Ni80Fe20/Au(t Au)/Co(t Co)/Au(t Au)]10 multilayers with t Co = 0.6, 0.8 nm and t Au = 1.5, 2.2 nm was studied. Measurements performed for as‐deposited samples and after subsequent annealing at T a (423 K < T a < 523 K) show that the GMR effect is stable under annealing below 475 K. It even slightly increases, for T a above 450 K, opening a path for a GMR value control and therefore is important for applications. The most pronounced changes were observed in the saturation field H CoS‖ which is a measure of perpendicular anisotropy. The significant variations were also noticed in the central part of the M (H ) and R (H ) curves. They are characterized by the nucleation field H N and the saturation field H S⊥ which are related to the appearance and disappearance of stripe domains in Co layers, respectively. The influence of T a on values of H CoS‖, H S⊥ and H N will be discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

5.
    
A key problem in some applications of pseudo spin‐valve structures (PSV) is the choice of appropriate materials for soft and hard ferromagnetic layers and their thickness to ensure a high difference in the switching fields. We show that this can be achieved using a NiO/Co structure as a hard magnetic layer. By varying the thickness of the constituent layers, good symmetrical switching characteristics have been shown in PSV structures with NiO/Co as a hard magnetic layer. The most important features of our PSV structures with suitable selected thickness of particular layers are: a relatively high value of GMR amplitude (up to 9% at RT) due to a possible electron specular reflection at the NiO/Co interfaces, a high coercivity (∼500 Oe) of hard magnetic layer resulted from a specific interaction of a 15 nm thick antiferromagnetic NiO with a 2 nm thick Co layer, nearly symmetrical magnetoresistance transfer curves MR(H) due to negligible unidirectional anisotropy field of NiO/Co bilayer with NiO thickness <15 nm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

6.
    
Magnetic and magnetotransport properties of (Ni80Fe20/Au/Co/Au)N multilayers with tCo = 0.6 nm and different thicknesses of Au layers (1.5 ≤ tAu ≤ 2.2 nm) have been investigated. The Co layer thickness used ensures its perpendicular anisotropy. We argue that in a hysteretic region of R(H) and M(H) dependencies the reorientation of Py layers is strongly influenced by the magnetic stray fields originating from the domain structure of Co layers. The values of stray fields are determined from R(H) and M(H) measurements and are compared with the calculated ones. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

7.
    
Magnetic Tunnel Junctions (MTJs) were fabricated on thermally oxidized Si(100) wafers by utilizing DC magnetron sputtering. Magnetic properties of MTJs with structure of Ta(50)/Cu(100)/Ta(50)/Ni80Fe20(20)/ Cu(50)/Mn75Ir25(100)/Co70Fe30(25)/AlOx(15)/Co70Fe30(25)/Ni80Fe20(t)/Ta(50), where t = 0, 100 and 100 Å, were investigated by using SQUID, XRD and MR analyzer. Exchange bias field is inversely proportional to temperature for t = 0 Å sample. XRD shows the improvement of (111) texture of IrMn3 and Cu after annealing. The exchange bias field decreases with increasing temperature due to thermal effect. And it is the highest for t = 100 Å due to increased crystallites size of IrMn3. For the free layer, the temperature dependence of interlayer exchange coupling involves the same mechanism as that of exchange bias. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

8.
The room-temperature magnetoresistance (MR) of electrodeposited Co–Cu/Cu multilayers was investigated. Samples were prepared on either a polycrystalline Ti foil or on a silicon wafer covered with a Ta buffer and a Cu-seed layer. The field dependence of the magnetoresistance was analyzed by decomposing the GMR into ferromagnetic (FM) and superparamagnetic (SPM) contributions, whereby the field dependence of the latter could be described by a Langevin function. In order to better understand the influence of the deposition conditions on the GMR in electrodeposited multilayers, the evolution of the relative importance of the two GMR contributions is discussed in terms of the Co dissolution process during the Cu deposition pulse.  相似文献   

9.
Co-W thin films were electrodeposited from aqueous bath with different organic additives. Electrochemical analysis showed that the transient state was limited and polarization behaviors were more evident during Co-W electrodeposition in the presence of organic additives. SEM measurement indicated that the surface morphology was affected by the nature of the organic additives to a large extent. Homogeneous Co-W thin films were obtained from the solutions containing ethyl methacrylate. Moreover, it was obvious that the presence of organic additives, in the electroplating bath, modified the structure and magnetic properties of the Co-W thin films according to the XRD and VSM measurements.  相似文献   

10.
11.
    
Electrochemical method has been applied for preparing Co/Cu multilayered thin films. The layers were electrodeposited after injecting Co and Cu containing solutions in a flow exchanged supporting electrolyte solution. In X‐ray diffraction at low angle range a long period peak could be observed, and in the middle angle region a single broad peak showing an average lattice spacing of the film was observed. The electrical resistance showed the properties of Giant Magnetoresistance (GMR). The GMR ratio showed a variation against Cu layer thickness as expected for anti‐ferromagnetically coupled films. The maximum GMR ratio obtained in this study was 6.2% at room temperature for the film of [Co 2.0 nm/Cu 1.0 nm]15. Though we need further studies for choosing suitable deposition conditions, the electrodeposition method is a promising method for producing multilayered thin films. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

12.
    
Electrons interacting with a domain wall in ferromagnetic metals are considered theoretically. In the framework of semiclassical approximation and taking into account Coulomb interaction between electrons, we calculate the spin and charge distribution near the domain wall as well as the local conductivity. We show that the conductivity is significantly modified near the wall and also depends on electron–electron interaction.  相似文献   

13.
    
It is well established that appropriate oxide capping is effective in forming nano‐oxide layers (NOL) in spin‐valve films for specular enhancement of giant magnetoresistance (GMR) effect. However, the beneficial effect of a NOL is strongly dependent on its process of formation. Therefore, we are interested to use a nano‐semiconducting layer (NSL) for specular reflection instead of oxide layers because its achievement is easier since no specific growth conditions are needed. Moreover, we intend to compare the efficiency of the electronic confinement inside the spin valve induced either by NSL or NOLs for structures with the same stack. We have prepared hard‐soft spin valve structures by sputtering on glass substrates with the following stacking sequence: Fe6 nm/Cu3 nm/CoFe1.8 nmRu0.8 nmCoFe3 nmCu2 nmRu2 nm. The reflecting layers have been inserted in the middle of the Fe soft layer and on the top of the spin valve. The GMR effect is enhanced by 60% and 75% respectively for the NSL and the NOL. This shows that the NOL is more efficient in term of electronic confinement. To understand the origin of the difference between the NOL and NSL magnetization measurements as well as transmission electron microscopy are presented.  相似文献   

14.
    
Local MH loops have been measured on the free layer of a magnetic tunnelling junction using a magneto‐optical Kerr effect system, with 2‐μm spatial resolution, to investigate the distribution of the interlayer exchange‐coupling field (HE) and the coercivity (Hc) on the free layer. HE and Hc increase gradually from a junction edge, reach a maximum at the centre and then fall off gradually at the other edge. Annealing enhances HE and smooths it out at the junction centre but Hc decreases after annealing. Two‐dimensional plots of HE and Hc show symmetric saddle shapes with their axes aligned with the pinned layer due to the shadow‐mask effect during deposition. HE measured along the pinned layer in this case shows a ridge curve with peaks at junction edges but Hc is nearly constant. Atomic force microscopy measurements show that the roughness variations over the junction are similar to HE with greater roughness at the centre, indicating mutual correlation and confirming the origin of HE to be Néel's orange‐peel coupling based on surface roughness. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

15.
    
A magnetic tunnel transistor (MTT) device using an amorphous n‐type Si semiconductor film for the base and collector consisting of [CoFe/NiFe] (free layer) and Si (top layer) multilayers is used to study the spin‐dependent hot electron magnetocurrent (MC) and the tunneling magnetoresistance at room temperature. A large MC of more than 40.2% is observed at the emitter–base bias voltage VBE of 0.62 V. The increasing emitter hot current and transfer ratio with the increase of the emitter–base voltage are due mainly to a rapid creation of a number of conduction‐band states in the Si collector. However, above a VBE of 0.62 V, a rapid decrease of the MC is observed in an amorphous Si‐based MTT. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

16.
Complexing agents are often used to improve the quality of electrodeposited alloys. Influence of different complexing agents with hydroxycarboxylic acid group on the electrodeposited Co-Pt-W thin films has been investigated. Cathodic polarization curves show that the polarization behaviors of electroplating bath with different complexing agents are very different. Surface morphology, phase composition and magnetic properties are observed by means of FESEM, XRD and vibrating sample magnetometer (VSM), respectively. It has been found out that, if citrate was used as complexing agent, the Co-Pt-W thin films were homogeneous and the granular crystals with the average grain size of 2 μm have been observed. Co-Pt-W thin films exhibited hexagonal close packed (hcp) lattice and strong perpendicular anisotropic magnetic behavior (Hc⊥ = 215.5 kA/m; Hc∥ = 55.4 kA/m). In the presence of gluconate, needle-like deposits were obtained and a strong face centered cubic (fcc(1 1 1)) texture was measured. The Co-Pt-W thin films showed isotropic magnetic behavior. In the case of tartate and malate, the coexistence of needle-like deposits and cellular deposits appeared. The XRD patterns showed that the mixed fcc and hcp phase formed. Perpendicular anisotropic magnetic behaviors of thin films, from malate or tartate baths, were not obvious.  相似文献   

17.
The influence of a Bi surfactant layer on the structural and magnetic properties of Co/Cu multilayers grown onto Cu(1 1 0) buffer layer by RF magnetron sputtering has been studied. The results of X-ray diffraction revealed the initial deposition of a 2.0 Å-thick Bi layer onto the Cu buffer layer prior to the deposition of the Co/Cu multilayer yielded high-quality fcc-(1 1 0) oriented epitaxial films. The X-ray photoelectron spectra revealed that Bi was segregated at around the top of the surface. Therefore, Bi was concluded to be an effective surfactant to enhance the epitaxial growth of Co/Cu(1 1 0) multilayer. The maximum giant magnetoresistance and antiferromagnetic interlayer coupling ratios of the Co/Cu multilayers were increased by using the Bi surfactant layer.  相似文献   

18.
    
Si/SiO2/Ta/NiFe/Mn–Ir/CoFe/NOL/CoFe/Al–O/CoFe/NiFe/Ta bottom conventional (without nano‐oxide layer, NOL) and specular (with NOL) MTJs were prepared by DC magnetron sputtering methods. In the case of a conventional MTJ, the TMR ratio increased up to 300 °C but the TMR ratio of a specular MTJ increased up to 400 °C. The highest TMR ratios of two samples after annealing at each optimal temperature were 21.6% (conventional MTJ) and 22.7% (specular MTJ), respectively, This improved thermal property of the specular MTJ is due to the NOL, which could act as a diffusion barrier for Mn. The bias‐voltage dependence of both samples was vastly improved after annealing at each optimal temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

19.
    
Magnetotransport studies of high quality AlGaN/GaN heterojunctions are reported. The transport and quantum lifetimes were respectively deduced from low temperature mobility and Shubnikov de Haas measurements as a function of carrier density in metal organic vapor phase epitaxy grown AlGaN/GaN/sapphire heterostructures. It is found that contrary to theoretical predictions both quantum and transport lifetimes have the same bell shape behavior versus carrier density. We determined experimental ratio of quantum to transport lifetime varying from 9 to 16 for carrier densities in 1–9 × 1012 cm–2 range. We show that the quantum lifetime is very sensitive to interface scattering at high carrier density. Therefore, our work shows how Shubnikov de Haas experiments can be used to characterize the quality of AlGaN/GaN interfaces used in modern light emitting devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

20.
    
We have observed a distinct inverse magnetoresistance in a hybrid tunnel junction. Two types of perovskite oxides, La0.67Sr0.33MnO3 and SrRuO3, were used as ferromagnetic electrodes with an SrTiO3 barrier in between them. Micron‐scale junctions were fabricated from 90° off‐axis sputtered trilayers, using standard optical lithography. Homo‐junctions that incorporate either La0.67Sr0.33MnO3 or SrRuO3 as both electrodes showed only normal positive magnetoresistances. In contrast, a clear inverse magnetic switching was found at 10 K for the hybrid junction. The spin polarization of SrRuO3 is about –9% as calculated based upon Julliere model, which is in quantitative agreement with the value (–10%) determined by the earlier tunneling experiment on SrRuO3/SrTiO3/Al structures. This is not only the manifestation of the existence of a negatively polarized material at the Fermi level, but also demonstrates that the widely‐cited Julliere model is applicable even to a negative polarization case. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

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