1.315μm附近CO2的高分辨率吸收光谱

利用可调谐激光长程吸收光谱测量系统,记录到1.315μm附近高气压（80kPa和40kPa）CO2的高分辨率吸收光谱,拟合分析获得谱线参数,结果与HITRAN 2k的数据基本一致。用程差法测量了绝对吸收,氧碘激光频率(7 603.138 5cm-1)的总吸收截面为(0.23~0.29)×-24cm2。仅计算谱线吸收的吸收截面为0.18×10-24cm2。在1.315μm波段COCO2存在连续吸收,吸收截面为(0.05~0.11)×10-24cm2。还讨论了测量误差问题。     

In-Situ Measurement of Electrical Character of PbTe at High Pressure and High Temperature

There is a widespread interest in lead telluride (PbTe) as a good thermoelectric material. We report the temperature dependence of thermopower S(T) and resistance R(T) for PbTe at the different pressures of from 1.8GPa to 5 GPa obtained by using the cubic anvil high pressure apparatus. With increasing pressure, R(T) and S(T) decrease. The effect of pressure on R(T) is larger than that on S(T). The power factor that is determined by thermopower and resistivity increases with increasing pressure. This method is an efficient tool for synthesizing good thermoelectric materials at high pressure and high temperature.     

1.315μm附近CO2的高分辨率吸收光谱

 利用可调谐激光长程吸收光谱测量系统，记录到1.315μm附近高气压（80kPa和40kPa）CO₂的高分辨率吸收光谱，拟合分析获得谱线参数，结果与HITRAN 2k的数据基本一致。用程差法测量了绝对吸收，氧碘激光频率(7 603.138 5cm^-1)的总吸收截面为(0.23~0.29)×^-24cm²。仅计算谱线吸收的吸收截面为0.18×10^-24cm²。在1.315μm波段COCO₂存在连续吸收，吸收截面为(0.05~0.11)×10^-24cm²。还讨论了测量误差问题。     

In-Situ Conductivity Measurement of BaF2 under High Pressure and High Temperature

We perform the in-situ conductivity measurement on BaF2 at high pressure using a microcircuit fabricated on a diamond anvil cell. The results show that BaF2 initially exhibits the electrical property of an insulator at pressure below 25 GPa, it transforms to a wide energy gap semiconductor at pressure from 25 to 30 GPa, and the conductivity increases gradually with increasing pressure from 30 GPa. However, the metallization predicted by theoretical calculation at 30-33 GPa cannot be observed. In addition, we measure the temperature dependence of the conductivity at several pressures and obtain the relationship between the energy gap and pressure. Based on the experimental data, it is predicted that BaF2 would transform to a metal at about 87 GPa and ambient temperature. The conductivity of BaF2 reaches the order of 10^-3Ω^-1 cm^-1 at 37 GPa and 2400 K, the superionic conduction is not observed during the experiments, indicating the application of pressure elevates greatly the transition temperature of the superionic conduction.     

Analysis and Correction of Diffraction Effect on the B／A Measurement at High Frequencies

A numerical method is developed to analyse and to correct the diffraction effect in the measurement of acoustic nonlinearity parameter B/A at high frequencies. By using the KZK nonlinear equation and the superposition approach of Gaussian beams, an analytical model is derived to describe the second harmonic generation through multi-layer medium SiO2/liquid specimen/SiO2. Frequency dependence of the nonlinear characterization curve for water in 110-155 MHz is numerically and experimentally investigated. With the measured dip position and the new modal, values of B/A for water are evaluated. The results show that the present method can effectively correct the diffraction effect in the measurement.     

Fabrication of Ge Nano-Dot Heterojunction Phototransistors for Improved Light Detection at 1.55μm

Heterojunction phototransistors （HPTs） with several Ge/Si nano-dot layers as the absorption region are fabricated to obtain improved light detectivity at 1.55μm. The HPT detectors are of n-p-n type with ten layers of Ge（8ML ） /Si（45nm） incorporated in the base-collector junction and are grown by an ultrahigh-vacuum chemicalvapor-deposition system. The detectors are operated with normal incidence. Because of the good quality of the grown material and fabrication process, the dark current is only 0.71pA/μm^2 under 5 V bias and the breakdown voltage is over 20 V. Compared to the positive-intrinsic-negative （PIN） reference detector with the same absorption layer, the responsivity is improved over 17 times for normal incidence at 1.55μm.     

Formaldehyde around 3.5 and 5.7-μm: Measurement and calculation of broadening coefficients

Self- and N₂-broadening coefficients of H₂CO have been retrieved in both the 3.5 and 5.7-μm spectral regions. These coefficients have been measured in FT spectra for transitions with various J (from 0 to 25) and K values (from 0 to 10), showing a clear dependence with both rotational quantum numbers J and K. First, an empirical model is presented to reproduce the rotational dependence of the measured self- and N₂-broadening coefficients. Then, calculations of N₂-broadening of H₂CO were made for some for 3296 ν₂ transitions using the semi-classical Robert-Bonamy formalism. These calculations have been done for various temperatures in order to obtain the temperature dependence of the line widths. Finally, self- and N₂-broadening coefficients, as well as temperature dependence of the N₂-widths has been generated to complete the whole HITRAN 2008 version of formaldehyde (available as supplementary materials).     

Measurement and correction of coupling in BEPCⅡ

The existing linear coupling theory and representation method are introduced briefly. The so-called local and global coupling is discussed in more detail. The vertical orbit distortion excited by a horizontal corrector is represented with the coupling parameters at the corrector and the observation point. The formula is used to measure the coupling in BEPCⅡ. In order to correct the coupling, vertical correctors are used to change the vertical orbit through sextupoles by a least square method. We also introduce and review other frequently used coupling measurement/tuning methods used in our machine.     

Electrical Conductivity of Synthetic Quartz Crystals at High Temperature and Pressure from Complex Impedance Measurements

An electrical conductivity measurement system under high-pressure conditions with a multi-anvil high-pressure apparatus by an ac complex impedance method was set up.With this system,we have successfully measured the electrical conductivity of synthetic quartz under pressure up to approximately 1.0GPa in the temperature range 661-987K.The values of electrical conductivity decrease with the increasing pressure and increase with the increasing temperature.The activation enthalpies for the α-quartz crystals are 1.10-1.28eV.The electrical conductivity of α-quartz is ionic,with Na ions moving in channels parallel to the c-axis being the predominant current carrier.     

Detection of HCl on the first and second overtone using semiconductor diode lasers at 1.7 μm and 1.2 μm

Sensitivity studies are also performed, to evaluate the minimum detectable concentration of HCl in air. Received: 7 August 1998/Revised version: 5 October 1998     

High temperature operation of edge-emitting photonic-crystal distributed-feedback quantum cascade lasers at λ∼7.6 μm

We present large-area, edge-emitting, photonic-crystal (PC) distributed-feedback (DFB) quantum cascade lasers (QCLs) emitting at λ∼7.6 μm and operating up to a heat sink temperature of 80 °C. The lasers use the anticrossing of index- and Bragg-guided dispersions of rectangular lattice to control the optical mode in the wafer plane. Single-mode operation with a high signal-to-noise ratio of about 20 dB and narrow beam divergence of 6.2° was obtained. A high peak power of 630 mW at 20 °C and still more than 160 mW at 60 °C was observed. Such a high performance single-mode device is very important to expand the potential applications in the long-wave infrared range.     

High output power operation of 1.3-μm strained MQW lasers with low threshold currents at high temperature

We have investigated the temperature dependencies of the slope efficiency and the threshold current for strained multiquantum well (MQW) lasers as a parameter of the well number. Smaller well numbers mean larger temperature dependencies of the slope efficiency and the threshold current, while larger well numbers mean larger internal loss and broadening of the photoluminescence linewidth of the MQW structure. Furthermore, the change in the slope efficiency with temperature change is related to the change in internal loss. In this work, the 1.3-m strained MQW laser with a compressive strain of 1.0% and 7 wells shows the highest output power of 6.8 mW for an injection current of 50 mA and the lowest threshold current of 5.5 mA at 85°C, and the lowest variation in output power of 2.0 dB from 25–85°C at injection current of 50 mA.     

Comparative theoretical analysis of continuous wave laser cutting of metals at 1 and 10 μm wavelength

We present a derivation and, based on it, an extension of a model originally proposed by V.G. Niziev to describe continuous wave laser cutting of metals. Starting from a local energy balance and by incorporating heat removal through heat conduction to the bulk material, we find a differential equation for the cutting profile. This equation is solved numerically and yields, besides the cutting profiles, the maximum cutting speed, the absorptivity profiles, and other relevant quantities. Our main goal is to demonstrate the model’s capability to explain some of the experimentally observed differences between laser cutting at around 1 and 10 μm wavelengths. To compare our numerical results to experimental observations, we perform simulations for exactly the same material and laser beam parameters as those used in a recent comparative experimental study. Generally, we find good agreement between theoretical and experimental results and show that the main differences between laser cutting with 1- and 10-μm beams arise from the different absorptivity profiles and absorbed intensities. Especially the latter suggests that the energy transfer, and thus the laser cutting process, is more efficient in the case of laser cutting with 1-μm beams.     

Measurement of the integrated luminosities of the data taken by BESⅢ at √s=3.650 and 3.773 GeV

Data sets were collected with the BESⅢ detector at the BEPCⅡ collider at the center-of-mass energy of √s=3.650 GeV during May 2009 and at √s=3.773 GeV from January 2010 to May 2011. By analyzing the large angle Bhabha scattering events, the integrated luminosities of the two data sets are measured to be （44.49±0.02±0.44） pb-1 and （2916.94±0.18±29.17） pb-1, respectively, where the first error is statistical and the second error is systematic.     

Analysis of far-infrared laser magnetic resonance spectra of CH2Br at 447.3 and 671.1μm

A simple model has been developed to describe the Zeeman patterns of far-infrared laser magnetic resonance spectra of the monobromomethyl radical CH₂Br observed at 447.3 and 671.1μm. A satisfactory agreement between the experimental spectra of the radical and their simulation with this simple model has been achieved. This approach can be used to gain further information about the structure and the spectrum of this interesting radical.     

Detection efficiency enhancement of single-photon detector at 1.55-μm by using of single photons lock-in and optimal threshold

The detection efficiency considerations are often the true determining factor as to whether a sensitive measurement is feasible. We demonstrate a robust method of single photons lock-in to enhance the detection efficiency of InGaAs single-photon avalanche diodes at 1.55-μm wavelength and suppressing background noise. With the optimal threshold for discrimination, the detection efficiency is achieved to 1.87 times bigger than that of the conventional photon counting method.     

Fabrication and modulation characteristics of InGaAsP/InGaAsP MQW DCPBH lasers at λ ∼ 1.57 μm

InGaAsP/InGaAsP multiple-quantum-well (MQW) double-channel planar-buried heterostructure (DCPBH) lasers emitting at λ∼ 1.57 μm were fabricated by optimizing the epitaxial growth with material characterization. At 25 °C (85 °C), a 1.8-μm-wide and 300-μm-long antireflectivity/high reflectivity coated laser exhibits a threshold current of 8 mA (23 mA) and a slope efficiency of 0.34 mW/mA (0.24 mW/mA) in continuous-wave mode (cw) as a result of the optimized thickness of the p-InP filling layer in the PBH structure with p-n-p-n current blocking layers. The maximum cw output power was approximately 20 mW at 25 °C, which was reduced to 17 mW at 85 °C. The peak wavelength varied from 1572 nm at 25 °C to 1602 nm at 100 °C for a fixed output power of 5 mW, indicating a temperature coefficient of ∼ 0.4 nm/K. The resonance frequency in the small-signal modulation response of devices depends on the etching depth of the U-shaped double channel; it increases from 0.4 GHz without channel etching to 4.3 GHz with 7-μm-thick etching. The full-width at half maximum values in the horizontal and vertical far-field patterns were approximately 24.5° (25.2°) and 29.4° (30.1°), respectively, at 25 °C (85 °C). PACS 42.55.Px; 73.61.Ey; 81.05.Ea