Layered MoS2 grown on c ‐sapphire by pulsed laser deposition

Layered growth of molybdenum disulphide (MoS₂) was successfully achieved by pulsed laser deposition (PLD) method on c ‐plane sapphire substrate. Growth of monolayer to a few monolayer MoS₂, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A_1g–E¹_2g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm^–1, suggesting a monolayer MoS₂ was obtained. Two‐dimensional (2D) layer growth of MoS₂ is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross‐sectional view of transmission electron microscopy (TEM). The in‐plane relationship, (0006) sapphire//(0002)MoS₂and sapphire//MoS₂ is determined. The results imply that PLD is suitable for layered MoS₂ growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS₂, analysed by X‐ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Ti:sapphire rib channel waveguide fabricated by reactive ion etching of a planar waveguide

We report, to our knowledge, the first active channel waveguide in Ti:sapphire. We have created ∼1.4-μm high ribs in a ∼10-μm thick Ti:sapphire planar waveguide by reactive ion etching. Following excitation by an Ar-ion laser, the rib structure showed channel-waveguide fluorescence emission. The mode profiles and the beam-parameter values (M²) were measured. The coupling efficiency of fluorescence emission into a single-mode fiber was an order of magnitude higher than for fluorescence from unstructured planar regions of the waveguide. Such devices are of interest as low-threshold tunable lasers and as broadband light sources in low-coherence interferometry. Received: 22 December 2002 / Revised version: 30 March 2002 / Published online: 8 August 2002     

Characterization of nitrogen-doped ZnO thin films grown by plasma-assisted pulsed laser deposition on sapphire substrates

The crystalline, optical and electrical properties of N-doped ZnO thin films were measured using X-ray diffraction, photoluminescence and Hall effect apparatus, respectively. The samples were grown using pulsed laser deposition on sapphire substrates coated priorly with ZnO buffer layers. For the purpose of acceptor doping, an electron cyclotron resonance (ECR) plasma source operated as a low-energy ion source was used for nitrogen incorporation in the samples. The X-ray diffraction analyses indicated some deterioration of the ZnO thin film with nitrogen incorporation. Temperature-dependent Van der Pauw measurements showed consistent p-type behavior over the measured temperature range of 200–450 K, with typical room temperature hole concentrations and mobilities of 5×10¹⁵ cm⁻³ and 7 cm²/V s, respectively. Low temperature photoluminescence spectra consisted of a broad emission band centered around 3.2 eV. This emission is characterized by the absence of the green deep-defect band and the presence of a band around 3.32 eV.     

Temperature dependent photoluminescence processes in ZnO thin films grown on sapphire by pulsed laser deposition

Temperature dependence of the photoluminescence (PL) transitions in the range of 10–300 K was studied for ZnO thin films grown on sapphire by pulsed laser deposition. The low temperature PL spectra were dominated by recombination of donor bound excitons (B_X) and their phonon replicas. With increasing temperature, free exciton (F_X) PL and the associated LO phonon replicas increased in intensity at the expense of their bound counterparts. The B_X peak with line width of ∼6 meV at 10 K exhibited thermal activation energy of ∼17 meV, consistent with the exciton-defect binding energy. The separation between the F_X and B_X peak positions was found to reduce with increasing temperature, which was attributed to the transformation of B_X into the shallower donor bound exciton complexes at consecutive lower energy states with increasing temperature, which are possible in ZnO. The energy separation between F_X peak and its corresponding 1-LO phonon replica showed stronger dependence on temperature than that of 2-LO phonon replica. However, their bound counterparts did not exhibit this behavior. The observed temperature dependence of the energy separation between the free exciton and it is LO phonon replicas are explained by considering the kinetic energy of free exciton. The observed PL transitions and their temperature dependence are consistent with observations made with bulk ZnO crystals implying high crystalline and optical quality of the grown films.     

SrRuO based heterostructures grown by pulsed laser deposition

In this report we demonstrate that high quality epitaxial heterostructures, based on metallic SrRuO₃ and insulating SrTiO₃ individual blocks a few unit cells thick, can be grown in a purely 2D, layer-by-layer mode, using pulsed laser deposition with in situ reflection high energy electron diffraction (RHEED) diagnostics. The thickness of each constituent block can be controlled at the level of a single unit cell. A detailed investigation carried out at the synchrotron facility, ESRF, by various X-ray techniques has demonstrated that each intensity oscillation of the RHEED specular spot corresponds strictly to the growth of a single perovskite unit cell, either SrRuO₃ or SrTiO₃. Furthermore, we show that, in these structures, the interfaces between the different constituent blocks are very sharp with a roughness of only one unit cell. Received 3 July 2002 / Received in final form 12 September 2002 Published online 31 October 2002 RID="a" ID="a"e-mail: tebano@uniroma2.it     

Zinc oxide nanostructures grown by pulsed laser deposition

We report the use of PLD to grow different ZnO nanostructures. Very different film morphologies have been observed using different laser wavelengths to ablate the target. The influence of substrate temperature and oxygen background pressure on the film morphology has been investigated too. Smooth and rough films, hexagonal pyramids and columns have been obtained by using a KrF excimer laser (248 nm) for the target ablation, while hexagonal hierarchical structures and pencils have been obtained by using ArF (193 nm). Photoluminescence and X-ray diffraction measurements revealed the good quality of the samples, in particular of those deposited using the ArF laser beam.     

Epitaxial lithium fluoride films grown by pulsed laser deposition

Lithium fluoride (LiF) films have been prepared on LaAlO₃ (LAO), MgO, Si and TiN buffered Si substrates using a pulsed laser deposition (PLD) technique. Their surface morphology and structural qualities were studied by using scanning electron microscopy (SEM) and X-ray diffractometry (XRD). Those films deposited on (100)MgO and (100)TiN buffered Si exhibited (200)_LiF||(200)_MgOand(200)_LiF||(200)_TiN||(200)_Si epitaxial relationships, respectively. These results suggest that LiF films can be epitaxially grown on lattice match substrates and, for the first time, on (100)Si via a buffer layer. LiF grown on bare (100)Si and (100)LAO substrates, however, yielded films of (100) preferred orientation only. Lattice mismatch and thermal effects are invoked to explain these observations. The surfaces of the LiF films are very rough and covered with large globules due to splashing of molten droplets from the target. In order to remedy such deficiencies we used a shadow mask to reduce both the size and the number of these globules while maintaining the heteroepitaxial properties. As a result optically smooth LiF films of excellent structural quality are produced. PACS 78.55.FV; 81.15.FG; 68.55.JK     

Epitaxial ZrC thin films grown by pulsed laser deposition

ZrC thin films were grown on (0 0 1)Si, (1 1 1)Si and (0 0 0 1)sapphire substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction, X-ray reflectivity and Auger electron spectroscopy investigations were used to characterize the structure and composition of the deposited films. It has been found that films grown at temperatures higher than 700 °C under very low water vapor pressures were highly textured. Films deposited on (0 0 1)Si grew with the (0 0 1) axis perpendicular to the substrate, while those deposited on (1 1 1)Si and (0 0 0 1)sapphire grew with the (1 1 1) axis perpendicular to the substrate. Pole figures investigations showed that films were epitaxial, with in-plane axis aligned to those of the substrate.     

Characterization of frequency-tripled nanosecond pulsed Ti:sapphire laser injection seeded by a frequency-scanning cw Ti:sapphire laser by use of optogalvanic spectroscopy of silicon atoms

The performance of a narrow-linewidth nanosecond pulsed deep-UV coherent light source consisting of a frequency-tripled nanosecond pulsed Ti:sapphire laser injection seeded by a frequency-scanning cw Ti:sapphire laser has been characterized by using optogalvanic spectroscopy of silicon atoms as a diagnostic. The envelope of the optogalvanic spectrum indicates the pure Doppler broadening of silicon atoms, which was estimated to be as broad as 4 GHz, without the broadening effect from the laser linewidth itself.     

Electrical conductivity of YSZ film grown by pulsed laser deposition

Yttria-stabilized zirconia (YSZ) thin films, 0.6–1.5 μm, were deposited on Pt and sapphire substrates by a pulsed laser deposition (PLD) method. Their structural and transport properties have been studied by means of X-ray diffraction and electrical conductivity measurements. The in-plane and the perpendicular-to-plane conductivities (hereafter, “across-plane” conductivity) of thin films were measured and compared to that of bulk sample. X-ray diffraction and electron microscopy results showed that the films on Pt and sapphire were polycrystalline cubic with a columnar structure. Both the across-plane and the in-plane conductivities of YSZ thin film were close to that of bulk specimens. Thus no conductivity enhancement was found for the present nano-crystalline YSZ films (grain or column size, 60∼100 nm).     

Critical dimensions for YBCO islands grown by pulsed laser deposition

Islands of constant width at half maximum of approximately 100 nm have been observed during the pulsed laser deposition of films of nominal thickness from 0.7 to 3.0 nm of the material YBa₂Cu₃O_7-δ(YBCO) on substrates of SrTiO₃. The critical island dimensions of width, height and spacing were analyzed with classical kinetic and thermodynamic theories. Analytically it was calculated that the equilibrium island width for a 29-nm-high island should be 111 nm. The analysis also predicted that islands of smaller height should be wider, and higher islands should be narrower. Islands of height from 3.5 nm to 29 nm were observed with an atomic force microscope to have a constant width at half maximum of approximately 100 nm. There are several possible differences between experiment and analysis that could explain the difference in the results: the islands formed in a non-equilibrium phase of YBCO, the island strain relaxed from the base to the top, and smaller islands may not have reached their equilibrium width. Larger islands had significant roughening at the top. Calculations predict that these islands would be unstable with respect to surface perturbations. Calculations of relaxation strain energy and surface energy showed that there was excess strain energy available for island heights above 9 nm to provide the extra surface energy that would be necessary for surface perturbations to develop. The minimum observed interisland spacing of 36 nm agreed with calculations of the average atom diffusion length (40.6 nm). Received: 2 April 2001 / Accepted: 6 September 2001 / Published online: 20 December 2001     

Phase transitions in Co nanoclusters grown by pulsed laser deposition

The crystalline structure of Co clusters embedded in an amorphous Al₂O₃ matrix was studied by transmission electron microscopy (TEM) and electron diffraction (TED). In the first stage of the growth a metastable structure (body-centred-cubic) is observed. A face-centred-cubic phase (fcc) is found when the size of the clusters increases ( diameter > 4 nm). The hexagonal-close-packed phase arises in the fcc phase by a succession of stacking faults at the largest sizes. The mechanisms of phase transformation have been determined by using high resolution electron microscopy (HREM). The chemical nature of the clusters, in particular the existence of Co-O bonds, was investigated by using electron energy loss spectroscopy (EELS). Received 03 July 2000 and Received in final form 22 December 2000     

Evolution of Ag nanocrystal films grown by pulsed laser deposition

We have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare metal-on-insulator growth morphology in Pulsed Laser Deposition (PLD) and Physical Vapor Deposition (PVD). Such films deposited from a thermal vapor are known to exhibit a characteristic morphological progression beginning with isolated three-dimensional islands and ending with a percolating, continuous film that conducts electrically. We have studied this progression for Pulsed Laser Deposition, a technique that differs from PVD in that depositing species arrive in short bursts (<10 microseconds) with kinetic energy typically of 10–100 eV. Kinetic Monte Carlo (KMC) simulations that take into account only the pulsed nature of the flux predict that PLD films should advance to percolation with relatively less deposition compared with PVD under otherwise identical conditions. Our experiments, with PLD and PVD performed in the same chamber, reveal that PLD films actually require more deposition to reach percolation. We conclude that energetic effects are important in determining morphology evolution. PACS 81.15.Fg; 68.55.-a; 81.07.Bc; 82.20.Wt     

p-Type zinc oxide films grown by infrared-light-assisted pulsed laser deposition

In this paper, ZnO films were grown on sapphire (0001) substrates by infrared-light-assisted pulsed-laser deposition (IRA-PLD). In addition, a nitrogen-plasma-assisted (PA-N) system was utilized for effectively doping the acceptor by radio frequency induction coupled plasma (RF-ICP). The effect of IRA-PLD and PA-N systems was investigated by studying the difference in substrate temperature with and without plasma assistance. We found that ZnO films exhibit no exciton emission with PA-N at a high temperature and that an increase in the substrate temperature yields ZnO films with a (002) and c-axis preferred orientation in a nitrogen (N₂) gas atmosphere. ZnO films are changed from n-type to p-type at a substrate temperature of 673 K by IRA-PLD with an N₂ background atmosphere.     

SnO2 thin films grown by pulsed Nd:YAG laser deposition

SnO₂ thin films have been deposited on glass substrates by pulsed Nd:YAG laser at different oxygen pressures, and the effects of oxygen pressure on the physical properties of SnO₂ films have been investigated. The films were deposited at substrate temperature of 500°C in oxygen partial pressure between 5.0 and 125 mTorr. The thin films deposited between 5.0 to 50 mTorr showed evidence of diffraction peaks, but increasing the oxygen pressure up to 100 mTorr, three diffraction peaks (110), (101) and (211) were observed containing the SnO₂ tetragonal structure. The electrical resistivity was very sensitive to the oxygen pressure. At 100 mTorr the films showed electrical resistivity of 4×10⁻² Ω cm, free carrier density of 1.03×10¹⁹ cm⁻³, mobility of 10.26 cm² V⁻¹ s⁻¹ with average visible transmittance of ∼87%, and optical band gap of 3.6 eV.     

Pyroelectric properties of CaCu3Ti4O12 thin films grown by pulsed laser deposition

A pyroelectric behavior was observed in CaCu₃Ti₄O₁₂ films and the pyroelectric coefficient was measured to be 1.35×10^?7 C/cm²?K for a film with thickness of 700 nm from 295 K to 340 K, larger than those of most pyroelectric materials. It was observed that the pyroelectric coefficient increased with the thickness of films from 300 to 700 nm. The origin of pyroelectric effect is proposed to depend on the distortion of the Ti–O octahedron due to the presence of Ti³⁺ ions. Comparing with the measurement result of an unpolarized film, our study strongly supports the interpretation of relaxor ferroelectric behavior in CaCu₃Ti₄O₁₂.     

Chemical composition of ZrC thin films grown by pulsed laser deposition

ZrC films were grown on (1 0 0) Si substrates by the pulsed laser deposition (PLD) technique using a KrF excimer laser working at 40 Hz. The nominal substrate temperature during depositions was set at 300 °C and the cooling rate was 5 °C/min. X-ray diffraction investigations showed that films deposited under residual vacuum or under 2 × 10⁻³ Pa of CH₄ atmosphere were crystalline, exhibiting a (2 0 0)-axis texture, while those deposited under 2 × 10⁻² Pa of CH₄ atmosphere were found to be equiaxed and with smaller grain size. The surface elemental composition of as-deposited films, analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), showed the usual high oxygen contamination of carbides. Once the topmost 2-4 nm region was removed, the oxygen concentration rapidly decreased, down to around 3-8% only in bulk. Simulations of the X-ray reflectivity (XRR) curves indicated a smooth surface morphology, with roughness values below 1 nm (rms) and films density values of around 6.30-6.45 g/cm³, very close to the bulk density. The growth rate, estimated from thickness measurements by XRR was around 8.25 nm/min. Nanoindentation results showed for the best quality ZrC films a hardness of 27.6 GPa and a reduced modulus of 228 GPa.     

TiCN thin films grown by reactive crossed beam pulsed laser deposition

In this work, we used a crossed plasma configuration where the ablation of two different targets in a reactive atmosphere was performed to prepare nanocrystalline thin films of ternary compounds. In order to assess this alternative deposition configuration, titanium carbonitride (TiCN) thin films were deposited. Two crossed plasmas were produced by simultaneously ablating titanium and graphite targets in an Ar/N₂ atmosphere. Films were deposited at room temperature onto Si (100) and AISI 4140 steel substrates whilst keeping the ablation conditions of the Ti target constant. By varying the laser fluence on the carbon target it was possible to study the effect of the carbon plasma on the characteristics of the deposited TiCN films. The structure and composition of the films were analyzed by X-ray Diffraction, Raman Spectroscopy and non-Rutherford Backscattering Spectroscopy. The hardness and elastic modulus of the films was also measured by nanoindentation. In general, the experimental results showed that the TiCN thin films were highly oriented in the (111) crystallographic direction with crystallite sizes as small as 6.0 nm. It was found that the hardness increased as the laser fluence was increased, reaching a maximum value of about 33 GPa and an elastic modulus of 244 GPa. With the proposed configuration, the carbon content could be easily varied from 42 to 5 at.% by changing the laser fluence on the carbon target.     

Alumina capped ZnO quantum dots multilayer grown by pulsed laser deposition

To extend the applicability of ZnO, with the bulk band gap of about 3.3 eV, into deep UV region, we have grown a multilayer of alumina capped ZnO quantum dots of mean in-plane sizes in the range of ∼1.8-3.6 nm at room temperature using alternate Pulsed Laser Deposition. Size dependent blue shift of the band gap of these dots up to ∼4.5 eV is observed in the optical absorbance spectra. The observed blue shift can be understood using the effective mass approximation in weak and strong confinement regimes.