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1.
刘光勇 《工程物理研究院科技年报》2003,(1):160-161
固体的断裂过程贯通宏、细、微观多个层次尺度,涉及固体力学、材料科学与物理学等领域。细观破坏过程的4种基本构元(孔洞、微裂纹、界面失效、变形局部化等)的起源和演化描述必须在微(纳)观尺度才能完全阐明。从原子尺度运用分子动力学技术模拟纳米单晶铜薄膜中孔洞在拉伸作用下的力学行为和动态断裂过程。 相似文献
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3.
刘光勇 《原子与分子物理学报》2004,21(4):377-379
用分子动力学方法模拟了拉伸状态下纳米单晶铜中孔洞的力学行为。通过与无孔纳米单晶铜块体弹性性能的比较,可知小孔使纳米单晶铜的弹性模量显下降。弹性阶段,有孔单晶铜中无位错产生;超过其弹性极限后,位错线从四周向有孔单晶铜内部发射,位错滑移为其主要变形机制。 相似文献
4.
基于Brenner的REBO势函数,利用分子动力学方法模拟了含氢量不同的类金刚石薄膜的纳米压痕过程,依据得到的加载卸载曲线,计算了薄膜的刚度、硬度以及弹性模量.结果表明:类金刚石薄膜的硬度由氢含量和sp3键含量两个因素共同决定;当薄膜中氢含量小于39% 时,薄膜硬度主要取决于sp3键含量,sp3键越多,硬度越高;当薄膜中氢含量达到52%,薄膜硬度则显著下降,此时氢的作用占据主导地位.
关键词:
类金刚石薄膜
分子动力学模拟
纳米压痕
硬度 相似文献
5.
刘光勇 《原子与分子物理学报》2004,21(Z1):377-379
用分子动力学方法模拟了拉伸状态下纳米单晶铜中孔洞的力学行为.通过与无孔纳米单晶铜块体弹性性能的比较,可知小孔使纳米单晶铜的弹性模量显著下降.弹性阶段,有孔单晶铜中无位错产生;超过其弹性极限后,位错线从四周向有孔单晶铜内部发射,位错滑移为其主要变形机制. 相似文献
6.
纳米结构的力学性能是纳米超微型器件设计的基础,分子动力学是研究纳米结构力学行为的有效方法.本文采用镶嵌原子方法模拟金属铜纳米棒的弯曲力学行为.计算结果表明由于尺寸效应和表面效应的影响,在纳观尺度下纳米结构表现出与宏观尺度下完全不同的力学特征.金属纳米棒弯曲力学过程分为初始变形迟滞阶段、线弹性变形阶段和塑性变形阶段.塑性变形阶段表现出“刚化”、“台阶”和较强的延性等特征.
关键词:
纳米结构
纳米棒
弯曲性能
分子动力学 相似文献
7.
分子动力学模拟铜薄膜的热导率 总被引:1,自引:0,他引:1
采用分子动力学(MD)方法模拟铜薄膜的热导率,给出了厚度在100~400nm、温度在100~600K范围内铜薄膜热导率对尺寸及温度的依赖关系. 相似文献
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结合卫星“微型核”的特点,研究电介质薄膜中的导热机理以及薄膜厚度对导热系数的影响.以结构较为简单、具有可靠势能函数,实验数据较为丰富和可靠的氩的(fcc)晶体为模型,采用平衡分子动力学方法(EMD)和各向异性非平衡分子动力学方法(NEMD)计算了氩晶体及其法向薄膜的热导率,并与实验结果进行比较.模拟结果表明,氩晶体纳米薄膜的热导率显著小于对应大体积晶体的实验值,具有明显的尺寸效应.在氩薄膜厚度为2.124—5.310nm的模拟范围内,薄膜的法向热导率随着薄膜厚度的增加而呈近似线性增加.
关键词:
热导率
纳米薄膜
尺寸效应
平衡分子动力学
非平衡分子动力学 相似文献
9.
研究了分子动力学模拟中纳米多晶金属样本的构建过程.首先采用Voronoi几何方法生成初始的纳米多晶铝和铜样本,然后用快速冷凝(或共轭梯度)法得到样本的局域最低能态,最后在恒温零应力周围环境下(常温常压NPT系综)退火得到最低能态样本.使用样本的残余内应力来衡量纳米多晶样本是否与实验制备的一致.通过监测这两步弛豫过程中晶界结构的变化形态、体系平均内应力和能量下降过程及具体的局域分布和不同弛豫条件下最终样本的弹性常数,发现样本的能量和残余内应力都接近实验制备的纳米多晶金属.对Voronoi几何法生成的晶界而言 相似文献
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冲击波阵面反映材料在冲击压缩下的弹塑性变形行为以及屈服强度、应变率条件等宏观量, 还与冲击压缩后的强度变化联系. 本文使用分子动力学方法, 模拟研究了冲击压缩下纳米多晶铜中的动态塑性变形过程, 考察了冲击波阵面和弹塑性机理对晶界存在的依赖, 并与纳米多晶铝的冲击压缩进行了比较. 研究发现: 相比晶界对纳米多晶铝的贡献而言, 纳米多晶铜中晶界对冲击波阵面宽度的影响较小; 并且其塑性变形机理主要以不全位错的发射和传播为主, 很少观察到全位错和形变孪晶的出现. 模拟还发现纳米多晶铜的冲击波阵面宽度随着冲击应力的增加而减小, 并得到了冲击波阵面宽度与冲击应力之间的定量反比关系, 该定量关系与他人纳米多晶铜模拟结果相近, 而与粗晶铜的冲击压缩实验结果相差较大. 相似文献
11.
Effect of stress state on deformation and fracture of nanocrystalline copper:Molecular dynamics simulation 下载免费PDF全文
Deformation in a microcomponent is often constrained by surrounding joined material making the component under mixed loading and multiple stress states. In this study, molecular dynamics(MD) simulation are conducted to probe the effect of stress states on the deformation and fracture of nanocrystalline Cu. Tensile strain is applied on a Cu single crystal,bicrystal and polycrystal respectively, under two different tension boundary conditions. Simulations are first conducted on the bicrystal and polycrystal models without lattice imperfection. The results reveal that, compared with the performance of simulation models under free boundary condition, the transverse stress caused by the constrained boundary condition leads to a much higher tensile stress and can severely limit the plastic deformation, which in return promotes cleavage fracture in the model. Simulations are then performed on Cu single crystal and polycrystal with an initial crack. Under constrained boundary condition, the crack tip propagates rapidly in the single crystal in a cleavage manner while the crack becomes blunting and extends along the grain boundaries in the polycrystal. Under free boundary condition, massive dislocation activities dominate the deformation mechanisms and the crack plays a little role in both single crystals and polycrystals. 相似文献
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应用分子模拟方法,建立了聚酰亚胺(polyimide,PI),石墨烯及羧基、氨基、羟基功能化石墨烯模型,探究了聚酰亚胺和石墨烯,聚酰亚胺和功能化石墨烯共混后复合材料的力学性能和玻璃化转变温度(T_g).研究结果表明,羧基修饰的石墨烯与PI复合后材料力学性能增加显著,其杨氏模量和剪切模量分别为4.946 GPa和1.816 GPa.不同官能团修饰的石墨烯引入PI后材料的T_g均有不同程度下降;未修饰的石墨烯与PI复合后,其T_g(559.30 K)较纯PI的T_g(663.57 K)降幅最大;而羧基修饰的石墨烯与PI复合后T_g(601.61 K)降幅最小.计算比较了PI/石墨烯复合材料体系密度、溶解度参数、相互作用能、弹性系数和氢键平均密度,研究发现羧基修饰石墨烯/PI复合材料的密度为1.396 g·cm~(-3),溶解度参数为23.51 J~(1/2)·cm~(-3/2),其相互作用能与氢键平均密度最大,弹性系数显示羧基修饰石墨烯与PI组成的复合材料内部最均匀.计算结果表明,羧基功能化石墨烯可以大幅度提高PI的力学性能,增强石墨烯与PI之间的相互作用可以减少复合材料T_g的降幅程度.此基体间相互作用的研究方法可以作为预测聚合物基纳米复合材料结构与性能的有效工具,以期为材料的设计与应用提供理论指导. 相似文献
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AbstractMolecular dynamics simulations have been performed to study the mechanical properties of a columnar nanocrystalline copper with a mean grain size between 9.0 and 24 nm. A melting–cooling method has been used to generate the initial samples: this method produces realistic samples that contain defects inside the grains such as dislocations and vacancies. The results of uniaxial tensile tests applied to these samples reveal the presence of a critical mean grain size between 16 and 20 nm, for which there is an inversion of the conventional Hall–Petch relation. The principal mechanisms of deformation present in the samples correspond to a combination of dislocations and grain boundary sliding. In addition, this analysis shows the presence of sliding planes generated by the motion of perfect edge dislocations that are absorbed by grain boundaries. It is the initial defects present inside the grains that lead to this mechanism of deformation. An analysis of the atomic configurations further shows that nucleation and propagation of cracks are localised on the grain boundaries especially on the triple grains junctions. 相似文献
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纳米尺度金属Ag以其独特的导电和导热性,广泛应用于微电子、光电子学、催化等领域,特别是在纳米微电极和纳米器件方面的应用.本文采用分子动力学方法模拟了不同晶粒尺寸下多晶银纳米线的拉伸变形行为,详细分析了晶粒尺寸对多晶银纳米线弹性模量、屈服强度、塑性变形机理的影响.发现当晶粒尺寸小于13.49 nm时,多晶Ag纳米线呈现软化现象,出现反Hall-Petch关系,此时的塑性变形机理主要以晶界滑移、晶粒转动为主,变形后期形成五重孪晶;当晶粒尺寸大于13.49 nm时,塑性变形以位错滑移为主,变形后期产生大量的孪晶组织. 相似文献
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利用分子动力学模拟方法,从原子尺度上研究了类金刚石(DLC)薄膜生长过程. 按照运动特点把入射原子在表面的行为分为表面冷冻、迁移、注入和反弹等四种,并由此提出原子运动模型. 入射原子的表面行为对DLC薄膜的微观结构以及生长方式有重要影响. 其中原子水平迁移是薄膜热弛豫的主要途径,入射原子的注入和迁移行为相互竞争,决定了薄膜生长的模式和最终结构. 利用统计分析手段给出了入射能量对原子表面行为进而对薄膜结构的影响,加深了对DLC薄膜生长机理的认识. 相似文献
16.
The formation and mechanical properties of amorphous copper are
studied using molecular dynamics simulation. The simulations of
tension and shearing show that more pronounced plasticity is found
under shearing, compared to tension. Apparent strain hardening and
strain rate effect are observed. Interestingly, the variations of
number density of atoms during deformation indicate free volume
creation, especially under higher strain rate. In particular, it is
found that shear induced dilatation does appear in the amorphous
metal. 相似文献
17.
The formation and mechanical properties of amorphous copper are studied using molecular dynamics simulation. The simulations of tension and shearing show that more pronounced plasticity is found under shearing, compared to tension. Apparent strain hardening and strain rate effect are observed. Interestingly, the variations of number density of atoms during deformation indicate free volume creation, especially under higher strain rate. In particular, it is found that shear induced dilatation does appear in the amorphous metal. 相似文献
18.
The effect of deposition temperature on the intermixing and microstructure of Fe/Ni thin film 下载免费PDF全文
The physical vapour deposition of Ni atoms on α-Fe(001) surface under different deposition temperatures were simulated by molecular dynamics to study the intermixing and microstructure of the interfacial region. The results indicate that Ni atoms hardly penetrate into Fe substrate while Fe atoms easily diffuse into Ni deposition layers. The thickness of the intermixing region is temperature-dependent, with high temperatures yielding larger thicknesses. The deposited layers are mainly composed of amorphous phase due to the abnormal deposition behaviour of Ni and Fe. In the deposited Ni-rich phase, the relatively stable metallic compound B2 structured FeNi is found under high deposition temperature conditions. 相似文献
19.
采用分子动力学模拟方法, 研究了金纳米管沿不同晶向拉伸与压缩载荷下的力学性能, 并分析了金纳米管的半径对其力学行为的影响. 在模拟计算中, 采用镶嵌原子势描述金原子之间的相互作用. 模拟结果表明, 在拉伸及压缩过程中, 不同晶向的金纳米管力学性能相差较大, 在拉伸和压缩载荷下金纳米管<110>向的屈服强度最大; 在三个晶向<100>, <110>, <111>的金纳米管中, <100>晶向的金纳米管其屈服强度和杨氏模量都远远小于其他晶向. 研究结果还发现, 当纳米管的半径小于3.0 nm时, 金纳米管的屈服强度没有大的变化, 而当半径大于3.0 nm后, 随着半径的增大, 其屈服强度明显降低.
关键词:
分子动力学模拟
金纳米管
力学性能 相似文献
20.
In this article, we study the deposition of AlGaN film on AlN template by molecular dynamics (MD) simulations. The effects of growth temperature and film thickness on the dislocation of deposited AlGaN film are simulated and studied. The atomic structure of deposited AlGaN film is also investigated. We find that the dislocations usually occur at the interface between AlN template and AlGaN film and then extend towards the growth direction. The dislocation density decreases with the increase of AlGaN film thickness, which indicates that increasing the thickness of deposited AlGaN film to a certain extent is beneficial to reducing dislocation. In addition, increasing the growth temperature can also effectively reduce the dislocation in deposited AlGaN film. Furthermore, the crystallinity of deposited AlGaN film could be improved by increasing the growth temperature. This is consistent with the dislocation discussion. The mobility of adatoms increases as the growth temperature increases. So it is easier for adatoms to find their ideal lattice points at higher temperature. Thus the dislocation and other defects can be effectively reduced and the crystal quality of deposited AlGaN film could be improved. 相似文献