Dynamic susceptibility of thin films with perpendicular magnetic anisotropy

We investigate the spin dynamics related to the Gilbert damping constant in infinite continuous thin films with perpendicular magnetic anisotropy (PMA), based on numerical and analytic approaches. We obtain the dynamic susceptibility of the infinite continuous thin films with various PMA energies by using micromagnetic simulations with periodic boundary conditions. These results are compared with the analytic solution that we derived from the Landau–Lifshitz–Gilbert equation. Based on our numerical and analytic studies, we support the physical analysis for results in the experimental determination of the Gilbert damping constant for PMA materials.     

Origin of the short-range, strong repulsive force between ionic surfactant layers

We study the electrostatic interaction between two ionic surfactant layers by performing molecular dynamic simulations of salt-free thin water films coated by surfactants (Newton black films). We find a strong exponentially decaying short-range repulsion not explained by classical Poisson-Boltzmann theory. This electrostatic force is shown to be mainly due to the anomalous dielectric response of water near charged surfactant layers. This result clarifies the much debated physical mechanism underlying the controversial "hydration forces" observed in experiments. In the case of ionic thin films, the "hydration forces" can be identified with the electrostatic forces induced by the layers of highly polarized water originated at the interfaces.     

Dipolar interactions in ferromagnetic thin films

We introduce a discrete model describing the motion of a zigzag domain wall in a disordered ferromagnet with in-plane magnetization, driven by an external magnetic field. The main ingredients are dipolar interactions and anisotropy. We investigate the dynamic hysteresis by analyzing the effects of external field frequency on the coercive field by Monte Carlo simulations. Our results are in good agreement with experiments on Fe/GaAs films reported in literature, and we conclude that dynamic hysteresis in this case can be explained by a single propagating domain wall model without invoking domain nucleation.     

(111)取向生长Pb(Zr0:95Ti0:05)O3纳米晶薄膜的铁电与热释电特性

" 在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法与快速退火工艺制备了300 nm厚的锆钛酸铅Pb(Zr0:95Ti0:05)O3 (PZT95/5)反铁电薄膜．结果显示600~700 ℃晶化处理的钙钛矿PZT95/5薄膜具有高度(111)取向生长特性．薄膜的电性能测量采用金属-铁电-金属电容器结构．在20 V电压作用下,600~700 ℃晶化处理的PZT95/5薄膜显示出饱和电滞回线．在1 kHz下,600、650和700 ℃晶化的薄膜介电常数与损耗分别为519与0.028、677与0.029、987     

Component effects on the vanadium oxide thin films phase transition character phenomenon observed

We present what is, to the best of our knowledge, how the components affect the phase transition character of the vanadium oxide thin films. The vanadium oxide thin films are prepared on zinc selenide by a DC magnet sputtering method for the first time; the components are achieved by the x-ray photoelectron spectroscopy (XPS). The films are annealed to tune their components. A spectral transmittance study has been made from 2.5 to 25.0 μm. We can see that, except for doping, different components can change the phase transition characters of the films. The components can affect the phase transition temperature, hysteresis cycle, and the transmittance.     

Surface smoothening mechanism of amorphous silicon thin films

An important concern in the deposition of thin hydrogenated amorphous silicon () films is to obtain smooth surfaces. Herein, we combine molecular-dynamics simulations with first-principles density functional theory calculations to elucidate the smoothening mechanism of plasma deposited thin films. We show that the deposition precursor may diffuse rapidly on the film surface via overcoordinated surface Si atoms and incorporate into the film preferentially in surface valleys, with activation barriers for incorporation dependent on the local surface morphology. Experimental data on smoothening and precursor diffusion are accounted for.     

Study on the dynamic critical behavior of a ferroelectric heterostructure

A Landau–Devonshire theory added in Landau–Khalatnikov dynamic equation has been used firstly to explore the dynamic critical behavior of a ferroelectric heterostructure composed of two different ferroelectric films. Two identical surface transition layers within each film are assumed, and an antiferroelectric interfacial coupling between two materials is considered. One interfacial parameter β is introduced to describe the differences of physical characteristics between two constituent films, which can reflect more realistic dynamic mechanism. It is found that the ferroelectric heterostructure may exhibit multi-loop hysteresis loop and four peaks of dielectric susceptibility if the appropriate values of parameter β, antiferroelectric interfacial coupling and size of the system are selected. We obtain the critical behavior of the appearance in multi-loop hysteresis loops and four peaks of dielectric susceptibility by equilibrium action of parameter β and antiferroelectric interfacial coupling, which will provide theoretical guiding for designing the multi-state memory and miniaturized device in future.     

Self-organized structures in soft confined thin films

We present a mini-review of our recent work on spontaneous, self-organized creation of mesostructures in soft materials like thin films of polymeric liquids and elastic solids. These very small scale, highly confined systems are inherently unstable and thus self-organize into ordered structures which can be exploited for MEMS, sensors, opto-electronic devices and a host of other nanotechnology applications. In particular, mesomechanics requires incorporation of intermolecular interactions and surface tension forces, which are usually inconsequential in classical macroscale mechanics. We point to some experiments and quasi-continuum simulations of self-organized structures in thin soft films which are germane not only to nanotechnology, but also to a spectrum of classical issues such as adhesion/debonding, wetting, coatings, tribology and membranes.     

Thermal Hysteresis in La2/3 Ca1/3 MnO3 Films Grown on Tilted SrTiO3 Substrates and Influence of External Magnetic Field

Thermal hysteresis in the resistivity of La2/3 Cu1/3MnO3 thin films grown on tilted SrTiO3 substrates is simulated by using the random network model on the basis of mixed-phase percolation between metallic and insulating domains, The metallic-insulating transition temperatures during the warming process are lower than those during the cooling process due to the difference in fraction of metallic domains between warming and cooling process. With an external magnetic field, the metallic-insulating transition temperatures shift to a higher value and the resistivities are reduced. The excellent agreement between the simulation and the experimental data further verifies that phase separation plays a crucial role in the transport process of La2/3Ca1/3MnO3 thin films.     

基于微波透射法的金属薄膜方块电阻测量理论及其应用

依据矩形波导基模的场分布表达式和电磁边界条件,解析推导了插入金属薄膜后的矩形波导透射系数,建立了考虑介质衬底影响的金属纳米薄膜微波透射系数仿真计算方法及其方块电阻的微波测量方法.运用全波电磁仿真方法对金属纳米薄膜方块电阻的微波测量装置进行了仿真验证,结果表明透射系数幅度与方块电阻的对数之间呈线性关系.采用磁控溅射工艺分别在高阻硅和玻璃两种介质衬底表面制备了不同方块电阻值的银薄膜,并测量其微波透射系数.实测结果表明,提出的方法适用于方块电阻阻值为0.05—0.5?/square的金属薄膜.研究结果对于微纳制造领域的导电薄膜方块电阻表征具有参考价值.     

Effect of electrode on dielectric susceptibility and pyroelectric properties of a ferroelectric thin film capacitor using landau-khalatnikov theory

The influence of electrodes on the dielectric susceptibility and pyroelectric properties of a ferroelectric thin film with surface transition layers has been investigated within the framework of Landau-Khalatnikov dynamic theory. The contribution of the electrodes is reflected by the depolarization field in the free-energy function. The large electrode effect implies the strong depolarization field in ferroelectric thin films. The results show that the electrode materials can greatly impact the dynamic dielectric and pyroelectric properties of a ferroelectric thin film.     

掺杂锰基氧化物中的相分离和渗流效应

目前，相分离仍是锰基氧化物超大磁电阻材料研究的热点，渗流效应假设已广泛用于解释其电输运特性．作者用变温磁力显微镜首次在La0.33Pr0.34Ca0.33MnO3薄膜中直接观察到了渗流过程，微观上证明了渗流效应假设的正确性．实验发现，降温过程中电阻率的陡降是铁磁金属相的渗流效应引起的，升温过程中电阻率的上升，则是由导电路径上磁畴的磁化强度随温度的升高而降低引起的，而导电路径一直存在．微观的磁回滞和宏观的电阻回滞相吻合．当然要定量解释锰氧化物中的超大磁电阻效应还需要做大量的理论和实验工作．     

Simulation of flexoelectricity effect on imprint behavior of ferroelectric thin films

The impact of flexoelectricity on the imprint behavior in ferroelectric thin films has been investigated within the framework of Landau-Khalatnikov theory, by incorporating the coupling effect between the stress gradient and polarization. It is found that the imprint phenomenon can be in part induced by flexoelectricity. In the presence of flexoelectric coupling, the compressive stress shifts the hysteresis loop to the negative electric field axis, but the tensile stress shifts it to the opposite direction, which is in good agreement with experimental result. Besides, the characteristic length of stress distribution has a significant influence on the upper part of hysteresis loop. It highlights the pressing need to avoid the stress gradient in order to prevent degradation of device performance in ferroelectric thin films.     

Room temperature ferroelectricity of tetragonally strained SrTiO3 thin films on single crystal Rh substrates

Epitaxial SrTiO₃ thin films were deposited on single crystalline Rh substrates by pulsed laser deposition. The tetragonally stained structure of the SrTiO₃ thin films with a c/a ratio of 1.04 was confirmed by x-ray diffraction experiments. The SrTiO₃ thin films exhibited good ferroelectric properties with a high remanent polarization (2P_r) of 8 μC/cm² and a canonical ferroelectric piezoresponse hysteresis loop at room temperature. We estimated a high activation electric field of about 6.4 MV/cm for domain wall creeping. This activation electric field is higher than that of typical ferroelectric materials such as PbTiO₃.     

Interaction effects in magnetic oxide nanoparticle systems

The interaction effects in magnetic nanoparticle system were studied through a Monte Carlo simulation. The results of simulations were compared with two different magnetic systems, namely, iron oxide polymer nanocomposites prepared by polymerization over core and nanocrystalline cobalt ferrite thin films prepared by sol-gel process. The size of the particles in the nanocomposites were estimated to be ∼15 nm with very little agglomeration. The low values of the coercivity obtained from the hysteresis measurements performed confirm that the system is superparamagnetic. SEM studies showed the cobalt ferrite films to have a nanocrystalline character, with particle sizes in the nanometer range. Hysteresis measurements performed on the thin films coated on silicon do not give evidence of the superparamagnetic transition up to room temperature and the coercivity is found to increase with decreasing film thickness. Comparison with simulations indicate that the nanocomposites behave like a strongly interacting array where exchange interactions lead to high blocking temperatures, whereas the films are representative of a semi-infinite array of magnetic clusters with weak interactions and thickness-dependent magnetic properties.     

Energy relations during the nanosecond remagnetization of magnetic films

The energy changes and dynamic hysteresis loops during the remagnetization of magnetic films are examined theoretically (using the theory for uniform rotation) and using experimental data for real films. Analysis of experimental data shows that the relations among the different forms of adsorbed energy are different for real and idealized films. Apparently, part of the energy accumulates in the film for a time comparable to the duration of the remagnetization and affects the remagnetization both before and after the uniform rotation is disrupted.     

Correlation between crystallinity and resistive switching behavior of sputtered WO3 thin films

The as-deposited WO₃ thin films were post-annealed at different temperatures (300 °C and 600 °C) in air to investigate a correlation between crystallinity and switching behavior of WO₃ thin films. Associating the results of XRD, FTIR, XPS and FESEM measurements, the annealing-caused crystallinity change contributes to the variation of the switching behaviors of the WO₃ thin films. The as-deposited WO₃ films with low crystalline structure are preferred for random Ag conducting path, resulting in large switching ratio but fluctuating I–V hysteresis, whereas the annealed WO₃ films with crystallized compact structure limits Ag conducting path, favoring the stable I–V hysteresis but small switching ratio. It is therefore concluded that electrochemical redox reaction-controlled resistance switching depends not only on electrode materials (inert and reactive electrodes) but also on crystallinity of host oxide.     

Local phase decomposition as a cause of polarization fatigue in ferroelectric thin films

We show that lead zirconate titanate thin films undergo local phase decomposition during fatigue. The original remanent polarization of the fatigued film is completely restored after furnace annealing in an O2 atmosphere, following a significant regrowth of a perovskite phase from the pyrochlorelike structure. By comparing our data with other researchers' work on annealing of fatigued ferroelectric samples, we conclude that local phase separation is the generic reason for electrical fatigue in ferroelectrics. A fatigue model is proposed in order to interpret our experimental data.     

Exchange bias training effect in coupled all ferromagnetic bilayer structures

Exchange coupled bilayers of soft and hard ferromagnetic thin films show remarkable analogies to conventional antiferromagnetic/ferromagnetic exchange bias heterostructures. Not only do all these ferromagnetic bilayers exhibit a tunable exchange bias effect, they also show a distinct training behavior upon cycling the soft layer through consecutive hysteresis loops. In contrast with conventional exchange bias systems, such all ferromagnetic bilayer structures allow the observation of training induced changes in the bias-setting hardmagnetic layer by means of simple magnetometry. Our experiments show unambiguously that the exchange bias training effect is driven by deviations from equilibrium in the pinning layer. A comparison of our experimental data with predictions from a theory based upon triggered relaxation phenomena shows excellent agreement.     

Dynamic hysteresis loop in a ferroelectric heterostructure

A Landau–Devonshire theory in combination with Landau–Khalatnikov dynamic equation has been firstly used to study the dynamic hysteresis loop of a ferroelectric heterostructure consisting of two different films. The surface transition layer within each component film and an antiferroelectric coupling at the interface between two films are considered. A parameter β is introduced to describe the differences of physical properties between two constituent films. The influence of parameterβ, surface transition layer, antiferroelectric coupling and electric field frequency on the dynamic hysteresis loop of the ferroelectric heterostructure is discussed in detail. The results show that the system can exhibit antiferroelectriclike behavior (i.e., multi-loop hysteresis) through tuning some critical factors.