Anisotropy of atoms in strong magnetic fields

The anisotropy of the atomic electronic density caused by strong magnetic fields is discussed here in the context of the statistical theory. In the framework of the current-density functional theory, a derivation is given of the gradient terms, necessary for anisotropy, based on the polarizability of free electrons in a magnetic field. Numerical results for the electronic density show a strong elongation of the electronic density along the field direction. In very high magnetic fields the electronic density is localized in thin columns along the field.     

C、N、O掺杂CuBr和CuCl的电子结构和磁性的第一性原理研究

本文基于密度泛函理论(DFT)结合广义梯度近似(GGA),采用第一性原理的平面波赝势方法,探究非磁性sp元素(C、N和O)掺杂卤化物(Cu Cl和Cu Br)是否能诱导产生半金属铁磁性.通过计算体系总能量、能带、态密度和分态密度,分析了非磁性元素掺杂卤化物体系的电子结构和磁性;通过对材料加压,给出了体系铁磁性随压强变化的趋势并作了分析.最后计算显示,O和N掺杂能诱导Cu Cl产生稳定的半金属铁磁性,随着压强的增大Cu Cl0.75N0.25和Cu Cl0.75O0.25的铁磁性减弱最终发生磁相变由铁磁态(FM)转变为非铁磁态(NM).     

FeVO_4电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理方法研究了三斜结构FeVO_4的结构,基态的能带结构、总态密度和分波态密度.将FeVO_4非共线的螺旋磁结构简化为六种不同的反铁磁结构,通过比较不同自旋构型的总能确定了基态磁结构.能带计算和总态密度结果均显示FeVO_4是能隙为2.19 e V的半导体,与实验结果相符.考虑Fe原子的在位库仑能,FeVO_4的能带结构和态密度都发生变化,说明FeVO_4晶体是一个典型的强关联电子体系.     

First-principles study on nonlocal ferromagnetism in （Cu, N）-codoped ZnO

First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of ZnO codoped with Cu and N. (Cu, N)-codoped ZnO exhibits magnetism, and the total magnetic moment mainly originates from the p-d hybridization of Cu-N and Cu-O as well as p-p coupling interaction between N and O at the Fermi level. The Zn34Cu2O35N1 favors energetically a ferromagnetic ground state due to the existence of stable Cu-N-Cu complex. These results imply that the (Cu, N)-codoped ZnO is a promising dilute magnetic semiconductor free of magnetic precipitates, which could broaden the horizon of currently known magnetic systems.     

氧、硫掺杂六方氮化硼单层的第一性原理计算

采用基于密度泛函理论和投影缀加平面波的第一性原理计算方法, 研究了六方氮化硼单层(h-BN)中的氮原子缺陷(V_N)、氧原子取代氮原子(O_N)和硫原子取代氮原子(S_N)时的几何结构、磁性性质和电子结构.研究发现, V_N和O_N体系形变较小, 而S_N体系形变较大; h-BN本身无磁矩, 但具有N缺陷或者掺杂后总磁矩都是1 μ_B; 同时给出了态密度和能带结构.利用掺杂体系的局域对称性和分子轨道理论解释了相关结果, 尤其是杂质能级和磁矩的产生. 关键词： 六方BN单层 第一性原理计算 密度泛函理论 分子轨道理论     

Polar behavior in a magnetic perovskite from a-site size disorder: a density functional study

We elucidate a mechanism for obtaining polar behavior in magnetic perovskites based on A-site disorder and demonstrate this mechanism by density functional calculations for the double perovskite (La,Lu)MnNiO6 with Lu concentrations at and below 50%. We show that this material combines polar behavior and ferromagnetism. The mechanism is quite general and may be applicable to a wide range of magnetic perovskites.     

Room-temperature ferromagnetism in carbon-doped ZnO

We report ferromagnetism in carbon-doped ZnO. Our first-principles calculations based on density functional theory predicted a magnetic moment of 2.02 mu(B) per carbon when carbon substitutes oxygen in ZnO, and an ferromagnetic coupling among magnetic moments of the carbon dopants. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed-laser deposition showed ferromagnetism with Curie temperatures higher than 400 K. The measured magnetic moment based on the content of carbide in the films [(1.5-3.0) mu(B) per carbon] was in agreement with the theoretical prediction. The magnetism is due to the Zn-C system in the ZnO environment.     

Reduced density matrices of the anisotropic Heisenberg model

The reduced density matrices of the anisotropic Heisenberg model are studied by means of a functional integral representation based on a generalized Poisson process. Integral equations, which are analogous to the classical Kirkwood-Salzburg equations, are then used to prove the existence of the infinite volume limit of the reduced density matrices, analyticity properties with respect to the fugacity (or magnetic field) and the potentials, and a cluster property, in the low fugacity (high magnetic field) region.The research reported in this paper was supported by the National Science Foundation.     

新型稀磁半导体Mn掺LiCaP的磁电性质

采用基于密度泛函理论的第一性原理平面波超软赝势方法,对纯LiCaP、Mn掺杂LiCaP、Li过量和不足时Mn掺杂LiCaP体系进行几何结构优化,计算并分析了体系的电子结构、能带结构、态密度等.结果表明:Li1±y(Ca1-xMnx) P(x=0. 125,y=0. 125)体系均表现为100%自旋注入,材料均具有半金属亚铁磁性,半金属性稳定,磁矩较大且主要来源于Mn掺入形成的深能级杂质带. Li过量时材料的导电性得到改善,Li不足时体系的居里温度(Tc)提高,说明LiCaP半导体的磁性和电性可以分别通过Mn的掺入和Li的含量进行调控.     

Electronic Structure and Magnetic Properties of Cr-Doped AlN

To understand the electronic and magnetic properties, we have studied Cr-doped zinc-blende AlN system in detail by applying a first-principle plane wave pseudopotential method based on the density functional theory within the local spin density approximation. The analyses of the band structures, density of states, exchange interactions, and magnetic moments show that Al1-xCrxN alloys may exhibit a half-metallic ferromagnetism character, that Cr in the diluted doping limit forms near-midgap deep levels, and that the total magnetization of the cell is 3μB per Cr atom, which does not change with Cr concentration. Moreover, we have succeeded in predicting that Al1-xCrzN alloys in x = 0.0625 has a very high Curie temperature, and lind that ferromagnetic exchange interaction between magnetic dopants is short-ranged.     

Magnetic phase diagram in a quasi-two-dimensional electron gas

Using spin density functional theory within the framework of the local spin density approximation with Perdew-Zunger type exchange-correlation energy, ferromagnetism in a quasi-two-dimensional electron gas (Q-2DEG) is studied. The electronic and magnetic structures of a thin film are calculated as a function of film thickness and electron density. Ferromagnetism in the Q-2DEG is found to appear at a higher electron density than in the three-dimensional electron gas. Unless a film is very thin, with decreasing electron density, a magnetic phase transition occurs from a spin-unpolarized fluid to a Wigner film with surface magnetism, in which the spin polarization localizes only in the neighborhood of surfaces. Further decreasing density induces another transition to a fully spin-polarized ferromagnetic Wigner film.     

A Comparative Study of the Electronic and Magnetic Properties of Gd5Ge4 and Gd5Si4 Compounds

We present a comparative study of electronic structure and magnetic properties of Gd₅Si₄ and Gd₅Ge₄ compounds using first principles full potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT) using the WIEN2k code. The local-spin density approximation with correlation energy (LSDA+U) method has been used as the exchange-correlation potential. The optimized lattice constants are in good agreement with the experimental data. The total and partial density of states (DOS) of Gd₅Si₄ and Gd₅Ge₄ show the difference in Si 3p-Gd 5d and Ge 4p-Gd 5d hybridization, which have an effective role in indirect exchange interaction. In addition, the magnetic moments of Gd, Si, and Ge atoms and the compounds are calculated to clarify the differences in the magnetic properties of these compounds.     

Finite-temperature density functional theory of atoms in strong magnetic fields

The density functional theory of atomic electrons in strong magnetic fields is generalized to finite-temperature systems. General integral formulations are developed in the format of Mermin-Kohn-Sham finite-temperature density functional theory. The lowest order of the general theory leads to a temperature-dependent extended Thomas-Fermi (TETF)-like functional, which is simple enough to be analyzed. The general theory provides a new way of calculating the equilibrium properties of many-electron systems in strong magnetic fields.     

A quantum explanation of the magnetic properties of Mn-doped graphene

Mn-doped graphene is investigated using first-principles calculations based on the density functional theory(DFT).The magnetic moment is calculated for systems of various sizes,and the atomic populations and the density of states(DOS)are analyzed in detail.It is found that Mn doped graphene-based diluted magnetic semiconductors(DMS)have strong ferromagnetic properties,the impurity concentration influences the value of the magnetic moment,and the magnetic moment of the 8×8 supercell is greatest for a single impurity.The graphene containing two Mn atoms together is more stable in the 7×7 supercell.The analysis of the total DOS and partial density of states(PDOS)indicates that the magnetic properties of doped graphene originate from the p–d exchange,and the magnetism is given a simple quantum explanation using the Ruderman–Kittel–Kasuya–Yosida(RKKY)exchange theory.     

Hg2CuTi型Mn2NiGe合金的电子结构、磁性对压力、四方变形的响应

运用基于密度泛函理论的第一性原理方法,研究了Hg2CuTi型 Mn2NiGe合金的电子结构对外加压力的响应以及Mn2NiGe的电子结构、磁性对四方变形的响应．结果表明：i）随着外加压力的增加,因Ni、Mn原子间距的减小而导致杂化程度的增强,使得态密度整体向低能区域移动,同时,态密度幅度整体略有减小;ii）在由奥氏体相到马氏体相的变形中,同样因Ni、Mn原子间距的减小而导致杂化程度的增强,占据态的态密度向低能区域移动,体系的能量降低,同时,成键态向低能方向移动,反键态向高能方向移动,能带变宽,成键作用加强,最终导致在马氏体相中的稳定性增大;iii）在四方变形过程中,Mn2NiGe总磁矩的变化主要由Ni原子磁矩的变化所产生．     

Hg2CuTi型Mn2NiGe合金的电子结构、磁性对压力、四方变形的响应

运用基于密度泛函理论的第一性原理方法,研究了Hg2CuTi型 Mn2NiGe合金的电子结构对外加压力的响应以及Mn2NiGe的电子结构、磁性对四方变形的响应．结果表明：i）随着外加压力的增加,因Ni、Mn原子间距的减小而导致杂化程度的增强,使得态密度整体向低能区域移动,同时,态密度幅度整体略有减小;ii）在由奥氏体相到马氏体相的变形中,同样因Ni、Mn原子间距的减小而导致杂化程度的增强,占据态的态密度向低能区域移动,体系的能量降低,同时,成键态向低能方向移动,反键态向高能方向移动,能带变宽,成键作用加强,最终导致在马氏体相中的稳定性增大;iii）在四方变形过程中,Mn2NiGe总磁矩的变化主要由Ni原子磁矩的变化所产生．     

Magnetic properties of quantum dots and rings

Exact many-body methods as well as current-spin-density functional theory are used to study the magnetism and electron localization in two-dimensional quantum dots and quasi-one-dimensional quantum rings. Predictions of broken-symmetry solutions within the density functional model are confirmed by exact configuration interaction (CI) calculations: In a quantum ring the electrons localize to form an antiferromagnetic chain which can be described with a simple model Hamiltonian. In a quantum dot the magnetic field localizes the electrons as predicted with the density functional approach. Received 5 December 2000     

5d过渡金属原子掺杂氮化硼纳米管的第一性原理计算

采用基于密度泛函理论的第一性原理计算方法,研究了当氮化硼纳米管（BNNT）中的B原子和N原子被5d过渡金属原子（Lu,Hf,Ta,W,Re,Os,Ir,Pt,Au,Hg）取代时BNNT的几何结构、电子结构和磁性性质. 作为对比,给出了理想BNNT,B缺陷体系（V_B）和N缺陷体系（V_N）的相应结果. 研究发现：5d原子取代B（B_5d）时体系的局域对称性接近于C_3v,但是取代N（N_5d）时体系的局域对称性偏离C_3v对称性较大;利用相同的5d原子进行掺杂时,B_5d的成键能比N_5d的成键能大;对于B_5d或者N_5d,其成键能基本上随着5d原子的原子序数的增大而降低;掺杂体系中出现了明显的杂质能级,给出了态密度等结果;不同掺杂情况的磁矩不同,取代B 时体系的总磁矩呈现出较强的规律性. 利用对称性和分子轨道理论解释了5d原子取代B时杂质能级的产生和磁性的变化规律. 关键词： 第一性原理计算 5d过渡金属原子 氮化硼纳米管 密度泛函理论