Front Propagation Dynamics with Exponentially-Distributed Hopping

We study reaction-diffusion systems where diffusion is by jumps whose sizes are distributed exponentially. We first study the Fisher-like problem of propagation of a front into an unstable state, as typified by the A+B → 2A reaction. We find that the effect of fluctuations is especially pronounced at small hopping rates. Fluctuations are treated heuristically via a density cutoff in the reaction rate. We then consider the case of propagating up a reaction rate gradient. The effect of fluctuations here is pronounced, with the front velocity increasing without limit with increasing bulk particle density. The rate of increase is faster than in the case of a reaction-gradient with nearest-neighbor hopping. We derive analytic expressions for the front velocity dependence on bulk particle density. Computer simulations are performed to confirm the analytical results.     

Effect of magnetic field on Mott's variable-range hopping parameters in multiwall carbon nanotube mat

We report the temperature and magnetic field dependence of the conductivity of multiwall carbon nanotube mat in the temperature range 1.4-150 K and in magnetic fields up to 10 T. It is observed that charge transport in this system is governed by Mott’s variable-range hopping of three-dimensional type in the higher temperature range and two-dimensional type in the lower temperature range. Mott’s various parameters, such as localization length, hopping length, hopping energy and density of states at the Fermi level are deduced from the variable-range hopping fit. The resistance of the sample decreases with the magnetic field applied in the direction of tube axis of the nanotubes. The magnetic field gives rise to delocalization of states with the well-known consequence of a decrease in Mott’s T0 parameter in variable-range hopping. The application of magnetic field lowers the crossover temperature at which three-dimensional variable-range hopping turns to two-dimensional variable-range hopping. The conductivity on the lower temperature side is governed by the weak localization giving rise to positive magnetoconductance. Finally, a magnetic field-temperature diagram is proposed showing different regions for different kinds of transport mechanism.     

Periodic mode hopping induced by thermo-optic effects in continuous-wave optical parametric oscillators

We show that thermal effects can lead to periodic mode hopping in cw optical parametric oscillators (OPOs). This mode hopping may occur as soon as two modes have different intensities at the point where they exchange their stability; this condition is easily fulfilled in OPOs that are triply resonant, or doubly resonant with a weakly resonant pump. We have observed such oscillations experimentally in a type II OPO in both configurations. A simple thermo-optic multimode model reproduces well the experimental regimes. We expect that multimode instabilities based on this mechanism can be observed with various aspects in many experimental setups at high pumping rate.     

Multiphonon hopping of carriers in CuO thin films

We have performed a detailed study of the electrical conduction process in CuO thin films deposited by the sol-gel dip coating technique in a temperature range 280-420 K. The electrical conduction is analyzed within the framework of various hopping conduction models. Multiphonon hopping conduction mechanism is found to dominate the electrical transport in the entire temperature region. Our results are consistent with this model of hopping conduction mechanisms with weak carrier-lattice coupling.     

Single-step triplet-triplet annihilation: an intrinsic limit for the high brightness efficiency of phosphorescent organic light emitting diodes

We investigate triplet-triplet annihilation in molecular host-guest systems where triplets are localized on spatially separated guest molecules. Our results indicate that the dominant mechanism of annihilation is single-step long-range (F?rster-type) energy transfer between two excited guests. This mechanism leads to a fundamental limit for the efficiency of phosphorescent organic light emitting diodes at high luminance. Our model is confirmed by photoluminescence decay experiments on 2,3,7,8,12,13,17,18-octaethylporphine platinum as guest in a host matrix of 4,4'-N,N'-dicarbazole-biphenyl.     

Controlled generation of intrinsic localized modes in microelectromechanical cantilever arrays

We propose a scheme to induce intrinsic localized modes (ILMs) at an arbitrary site in microelectromechanical cantilever arrays. The idea is to locate the particular cantilever beam in the array that one wishes to drive to an oscillating state with significantly higher amplitude than the average and then apply small adjustments to the electrical signal that drives the whole array system. Our scheme is thus a global closed-loop control strategy. We argue that the dynamical mechanism on which our global driving scheme relies is spatiotemporal chaos and we develop a detailed analysis based on the standard averaging method in nonlinear dynamics to understand the working of our control scheme. We also develop a Markov model to characterize the transient time required for inducing ILMs.     

Proton diffusion mechanism in amorphous SiO2

We study proton diffusion in amorphous SiO2 from the atomic scale to the long-range percolative regime. Ab initio molecular dynamics suggest that the dominant atomic process consists in cross-ring interoxygen hopping assisted by network vibrations. A statistical analysis accounting for the disorder in amorphous SiO2 yields relations between transition energies and interoxygen distances for both cross-ring and nearest-neighbor hopping. The percolative regime is then addressed through large-size model systems reproducing these relations. Cross-ring hopping is confirmed as the dominant diffusion mechanism and supported by a good agreement with experiment for the activation energy.     

纳米硅薄膜的低温电输运机制

在很宽的温度范围(500—20K)研究了本征和不同掺磷浓度的纳米硅薄膜的电输运现象.发现 原先的异质结量子点隧穿(HQD)模型能很好地解释薄膜在高温下(500—200K)的电导曲线,但 明显偏离低温下的实验值.低温电导(100—20K)具有单一的激活能W,并与k_BT值 大小相当(W～1—3k_BT),呈现出Hopping电导的特征.对HQD模型做了修正,认为 纳米硅同时存在两种输运机制：热激发辅助的电子隧穿和费米能级附近定域态之间的Hoppin g电导.高温时(T 关键词： 纳米硅薄膜 低温电导 电输运     

The effect of sintering time and temperature on the electrical properties of MnZn ferrites

Polycrystalline samples of Zn_0.37Mn_0.58Fe_2.05O₄ have been prepared by the solid state reaction method. The structural characterization of the samples indicated that 1523 K is the most proper temperature for obtaining a single phase spinel structure. The DC electrical conductivity measurement was carried out by a two-probe method. Temperature dependent of DC electrical conductivity increases with increase in temperature ensuring the semiconductor nature of the samples. The drift mobility was estimated and found to be temperature dependant. The electrical conduction mechanism in these samples change from hopping, in the low temperature range, to polaron hopping in the high temperature range. The portion of energy Δε anticipated in hopping was determined. It decreases with increasing the sintering time and temperature. PACS 70; 71.20.Nr; 75.50.Gg     

Effects of photoexcitation on the current transport mechanism in amorphous indium selenide thin films

The effect of photoexcitation on the current transport mechanism in amorphous indium selenide thin films was studied by means of dark and illuminated conductivity measurements as a function of temperature. Analysis of the dark electrical conductivity in the temperature range 110–320 K reveals behaviour characteristic of carriers excited to the conduction band and thermally assisted variable-range hopping (VRH) at the Fermi level above 280 K and below 220 K, respectively. In the temperature range 220–280 K, a mixed conduction mechanism was observed. A conductivity activation energy of ～300 meV (above 280 K), a density of localised states (evaluated assuming a localisation length of 5 Å) of 1.08 × 10²¹ cm^?3 eV^?1, an average hopping distance of 20.03 Å (at 120 K) and an average hopping energy of 27.64 meV have been determined from the dark electrical measurements. When the sample was exposed to illumination at a specific excitation flux and energy, the values of the conductivity activation energy, the average hopping energy and the average hopping range were significantly decreased. On the other hand, the density of localised states near the Fermi level increased when the light flux was increased. Such behaviour was attributed to a reversible Fermi level shift on photoexcitation.     

Structural and transport properties of β″-Al2O3

We report results of a molecular dynamics simulation of sodium β″-Al₂O₃. We confirm that the superiotic properties of this material require deviation from the stoichiometric composition. Our results yield values for the transport coefficients of the material that are in good agreement with experiment. Thermal parameters, measured by diffraction studies are well reproduced by the calculations. The simulations suggest a change in the diffusion mechanism from hopping, at low temperatures, to liquid-like at higher temperatures. The change in migration mechanism isaccompanied by corresponding structural changes.     

Systematical study of dimer diffusion on metal fcc(0 0 1) surfaces

We study systematically the dimer diffusion on a series of metal fcc(0 0 1) surfaces. The atomic interactions are modeled by the realistic model potentials including embedded-atom method potential, surface-embedded-atom method potential, and Rosato-Guillopé-Legrand potential. Based on the results of the static calculations and the molecular dynamics simulations, three different kinds of fcc(0 0 1) surfaces can be distinguished named hard, middle, and soft. On the different kind of surfaces, not only the dominant diffusion mechanism but also the physical model for exchange mechanism is different. In addition, besides the conventional hopping and exchange mechanisms, some other interesting diffusion mechanisms for dimers are observed in our molecular dynamics simulations such as exchange rotation mechanism, cooperative hopping mechanism, and cooperative exchange mechanism.     

Backscattering suppression in supersonic 1D polariton condensates

We investigate the effect of disorder on the propagation of one-dimensional polariton condensates in semiconductor microcavities. We observe a strong suppression of the backscattering produced by the imperfections of the structure when increasing the condensate density. This suppression occurs in the supersonic regime and is simultaneous to the onset of parametric instabilities which enable the "hopping" of the condensate through the disorder. Our results evidence a new mechanism for the strong scattering reduction of polaritons at high speeds.     

Electrical properties of a lead-free perovskite ceramic: (Na<Subscript>0.5</Subscript>Sb<Subscript>0.5</Subscript>)TiO<Subscript>3</Subscript>

Polycrystalline (Na_0.5Sb_0.5)TiO₃ was prepared using a high-temperature solid-state reaction method. An XRD analysis indicated the formation of a single-phase monoclinic structure. Complex impedance studies revealed the presence of grain boundary effects from 300 °C onwards. Also, the dielectric relaxation in the system was found to be of a non-Debye type. The ac conductivity data were used to evaluate the density of states at the Fermi level, the minimum hopping length and activation energy of the compound. The dc electrical and thermal conductivities of grain and grain boundary have been assessed. The correlated barrier hopping model was found to successfully explain the mechanism of charge transport in (Na_0.5Sb_0.5)TiO₃. PACS 72.20.Ee; 77.22.Ch; 77.22.Gm; 77.84.Dy; 81.05.Je     

Bipolaron mechanism for organic magnetoresistance

We present a mechanism for the recently discovered magnetoresistance in disordered pi-conjugated materials, based on hopping of polarons and bipolaron formation, in the presence of the random hyperfine fields of the hydrogen nuclei and an external magnetic field. Within a simple model we describe the magnetic field dependence of the bipolaron density. Monte Carlo simulations including on-site and longer-range Coulomb repulsion show how this leads to positive and negative magnetoresistance. Depending on the branching ratio between bipolaron formation or dissociation and hopping rates, two different line shapes in excellent agreement with experiment are obtained.     

Cell structure and stability of detonations with a pressure-dependent chain-branching reaction rate model

We examine detonation waves with a four-step chain-branching reaction model that exhibits explosion limits close to the two lower limits of hydrogen–oxygen chemistry. The reaction model consists of a chain-initiation step and a chain-branching step, both temperature-dependent with Arrhenius kinetics, followed by two pressure-dependent termination steps. Increasing the chain-branching activation energy or the overdrive shortens the reaction length in the ZND wavelength and leads to more unstable detonations, according to multi-dimensional linear stability analysis. Corresponding numerical simulations show that detonations with weak chain-branching reactions have a wave structure similar to those with a single-step reaction; strong chain-branching detonations show distinct keystone features. Keystone regions are bounded by a discontinuity in reactivity across the shear layers emanating from the triple points at the intersection of the transverse waves and the main front. Especially in the strong case, chain-branching occurs within a thin front at the back side of the keystone figure, or immediately behind Mach stems.     

Disorder and localization of electrons in bilayer graphene

We investigate localization behavior of electron states in bilayer graphene formed with the Bernal stacking in the presence of various types of disorder (site-energy, in-plane hopping and inter-plane hopping) by the use of the transfer matrix method. It is found that all the states are localized at various kinds of disorder (site-energy, in-plane hopping and inter-plane hopping) except that in the case of inter-plane-hopping disorder the states at the zero energy are critical. The implications of the results are discussed.     

Hopping and drift mechanisms of photoconductivity in ZnO:Li films

The mechanisms of dark- and photoconductivity in ZnO:Li films are investigated. The obtained results are interpreted on the basis of hopping mechanism of charge carriers transport for the dark conductivity and the hopping or drift mechanism for the photoconductivity depending on the energy of an exciting photon. For photons with the energy more than the forbidden band gap the drift mechanism of carriers transport takes place, while for photons with the energy less than the forbidden band gap the hopping mechanism takes place.     

Noncontact friction and relaxational dynamics of surface defects

The motion of a cantilever near sample surfaces exhibits additional friction even before two bodies come into mechanical contact. Called noncontact friction (NCF), this friction is of great practical importance to the ultrasensitive force detection measurements. The observed large NCF of a micron-scale cantilever found an anomalously large damping that exceeds theoretical predictions by 8-11 orders of magnitude. This finding points to a contribution beyond fluctuating electromagnetic fields within the van der Waals approach. Recent experiments reported by Saitoh et al. [Phys. Rev. Lett. 105, 236103 (2010)] also found a nontrivial distance dependence of NCF. Motivated by these observations, we propose a mechanism based on the coupling of a cantilever to the relaxation dynamics of surface defects. We assume that the surface defects couple to the cantilever tip via spin-spin coupling and their spin relaxation dynamics gives rise to the backaction terms and modifies both the friction coefficient and the spring constant. We explain the magnitude, as well as the distance dependence of the friction due to these backaction terms. Reasonable agreement is found with the experiments.