Spin transfer in magnetic tunnel junctions with hot electrons

Recent data on the bias dependence of the spin transfer effect in magnetic tunnel junctions have shown that torque remains intact at bias voltages for which the tunneling magnetoresistance has been strongly reduced. We show that the current induced excitations due to hot electrons, while reducing the magnetoresistance, enhance both the charge current and the spin transfer in magnetic tunnel junctions in such a manner that the ratio of the torque to the charge current does not significantly change.     

Current driven magnetization dynamics in helical spin density waves

A mechanism is proposed for manipulating the magnetic state of a helical spin density wave using a current. It is shown that a current through a bulk metal with a helical spin density wave induces a spin transfer torque, which gives rise to a rotation of the order parameter. The use of spin transfer torque to manipulate the magnetization in bulk systems does not suffer from the obstacles seen for magnetization reversal using interface spin transfer torque in multilayered systems. The effect is demonstrated by a quantitative calculation of the current induced magnetization dynamics of a rare earth metal, Er. Finally, we propose a setup for experimental verification.     

Spin torque, tunnel-current spin polarization, and magnetoresistance in MgO magnetic tunnel junctions

We employ the spin-torque response of magnetic tunnel junctions with ultrathin MgO tunnel barrier layers to investigate the relationship between spin transfer and tunnel magnetoresistance (TMR) under finite bias, and find that the spin torque per unit current exerted on the free layer decreases by < 10% over a bias range where the TMR decreases by > 40%. This is inconsistent with free-electron-like spin-polarized tunneling and reduced-surface-magnetism models of the TMR bias dependence, but is consistent with magnetic-state-dependent decay lengths in the tunnel barrier.     

Biased quasiballistic spin torque magnetization reversal

We explore the ultrafast limit of spin torque magnetization reversal time. Spin torque precession during a spin torque current pulse and free magnetization ringing after the pulse is detected by time-resolved magnetotransport. Adapting the duration of the pulse to the precession period allows coherent control of the final orientation of the magnetization. In the presence of a hard axis bias field, we find optimum quasiballistic spin torque magnetization reversal by a single precessional turn directly from the initial to the reversed equilibrium state.     

Influence of an interface layer on the effective coupling at a ferromagnet/antiferromagnet interface

We examine the exchange anisotropy induced at a ferromagnetic/antiferromagnetic interface when an antiferromagnetic interface layer exists. We show that competition between exchange couplings in the interface layer can result in a ferrimagnetic-like compensation point. This leads to a reversal of the effective field acting on the ferromagnet, and a consequent sign change of the exchange bias for temperatures near the Néel temperature of the antiferromagnet. A surprising result is the sensitive dependence of the compensation point on exchange interactions. Even minute modifications of the exchange interactions near the interface can result in a reversal of the effective field, provided certain conditions are met.     

Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: first-principles calculations

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions.     

Parameter dependence of resonant spin torque magnetization reversal

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.     

Thermal spin transfer in Fe-MgO-Fe tunnel junctions

We compute thermal spin transfer (TST) torques in Fe-MgO-Fe tunnel junctions using a first principles wave-function-matching method. At room temperature, the TST in a junction with 3 MgO monolayers amounts to 10(-7) J/m(2)/K, which is estimated to cause magnetization reversal for temperature differences over the barrier of the order of 10 K. The large TST can be explained by multiple scattering between interface states through ultrathin barriers. The angular dependence of the TST can be very skewed, possibly leading to thermally induced high-frequency generation.     

Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect

Spin transfer torque in magnetic structure occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium is absorbed by the interface. In this paper, considering the Rashba effect on the semiconductor region, we discuss the spin transfer torque in semiconductor/ferromagnetic structure and obtain the components of spin-current density for two models:(i) single electron and(ii) the distribution of electrons. We show that no matter whether the difference in Fermi surface between semiconductor and Fermi spheres for the up and down spins in ferromagnetic increases, the transmission probability decreases. The obtained results for the values used in this article illustrate that Rashba effect increases the difference in Fermi sphere between semiconductor and Fermi sphere for the up and down spins in ferromagnetic. The results also show that the Rashba effect, brings an additional contribution to the components of spin transfer torque, which does not exist in the absence of the Rashba interaction. Moreover, the Rashba term has also different effects on the transverse components of the spin torque transfer.     

Out-of-Plane Torque Influence on Magnetization Switching and Susceptibility in Magnetic Multilayers

Based on both the spin diffusion equation and the Landau-LlTshitz-Gilbert （LLG） equation, we demonstrate the influence of out-of-plane spin torque on magnetization switching and susceptibility in a magnetic multilayer system. The variation of spin accumulation and local magnetization with respect to time are studied in the magnetization reversal induced by spin torque. We also research the susceptibility subject to a microwave magnetic field, which is compared with the results obtained without out-of-plane torque.     

Magnetization reversal in perpendicular exchange-biased multilayers

Co/Pt multilayers with perpendicular magnetic anisotropy exhibit an exchange bias when covered with an IrMn layer. The exchange bias field, which is about 7 mT for 3 Co/Pt bilayer repetitions and a Co layer thickness of 5 Å, can be increased up to 16.5 mT by the insertion of a thin Pt layer at the Co/IrMn interface. The interfacial magnetic anisotropy of the Co/IrMn interface (KSCo/IrMn =-0.09 mJ/m2) favours in-plane magnetization and tends to tilt the Co spins away from the film normal. Dynamical measurements of the magnetization reversal process reveal that both thermally activated spin reversal in the IrMn layer and domain wall nucleation in the Co/Pt multilayer influence the interfacial spin structure and therefore the strength of the perpendicular exchange bias field.     

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes.     

Effect of resistance feedback on spin torque-induced switching of nanomagnets

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.     

Antiferromagnetic ordering driven by the molecular orbital order of C(60) in alpha'-tetra-kis-(Dimethylamino)-ethylene-C(60)

We have studied the ground state of a fullerene-based magnet, the alpha;{'}-phase tetra-kis-(dimethylamino)-ethylene-C60 (alpha'-TDAE-C(60)), by electron spin resonance and magnetic torque measurements. Below T(N) = 7 K, nonparamagnetic field dependent resonances with a finite excitation gap (1.7 GHz) are observed along the a axis. Strong enhancement in their intensity as temperature is decreased is inconsistent with excitation from a singlet state, which had been proposed for the alpha'-phase ground state. Below T(N), nonquadratic field dependence of the magnetic torque signal is also observed in contrast to quadratic field dependence in the paramagnetic phase. The angle-dependent torque signals below T(N) indicate the existence of an anisotropy of the bulk magnetization. From both experiments, we propose an antiferromagnetic ground state driven by the cooperative orientational ordering of C(60) in the alpha'-TDAE-C(60).     

Magneto-Transport and Nanomagnet Dynamics in MgO-Based Magnetic Tunnel Junctions(MTJs)

We investigate bias and different barrier thicknesses effects on quantities related to spin and charge currents in MgO-based magnetic tunnel junctions. Using the non-Equilibrium Green's function formalism, we demonstrate that the in-plane and out-of-plane components of the spin-transfer torque have asymmetric and symmetric behaviors respectively. Magneto-resistance also decreases with increasing barrier thickness. The Landau–Lifshits–Gilbert equation describes the dynamics of the magnetization made by spin transfer torque. Increasing in spin current above its critical value or smaller the magnet reduces the switching time which is major result for making of new memory devices.     

Interaction-driven spin precession in quantum-dot spin valves

We analyze spin-dependent transport through spin valves composed of an interacting quantum dot coupled to two ferromagnetic leads. The spin on the quantum dot and the linear conductance as a function of the relative angle theta of the leads' magnetization directions is derived to lowest order in the dot-lead coupling strength. Because of the applied bias voltage spin accumulates on the quantum dot, which for finite charging energy experiences a torque, resulting in spin precession. The latter leads to a nontrivial, interaction-dependent, theta dependence of the conductance. In particular, we find that the spin-valve effect is reduced for all theta not equal pi.     

Perpendicular spin torques in magnetic tunnel junctions

We quantitatively determine a perpendicular spin torque in magnetic tunnel junctions by measuring the room-temperature critical switching current at various magnetic fields and current pulse widths. We find that the magnitude of the torque is proportional to the product of the current density and the bias voltage, and the direction of the torque reverses as the polarity of the voltage changes. By taking into account the energy-dependent inelastic scattering of tunnel electrons, we formulate the bias dependence of the perpendicular spin torque which is in qualitative agreement with the experimental results.     

Electric and thermo spin transfer torques in Fe/Vacuum/Fe tunnel junction

We present first-principle calculations of electric and thermo spin transfer torques (STT) in Fe/Vacuum(Vac)/Fe magnetic tunnel junctions (MTJs). Our quantitative studies demonstrate rich bias dependence of STT and tunnel magneto resistance (TMR) behaviors with respect to the interface roughness. Thermoelectric effects in Fe/Vac/Fe MTJs is remarkable. We observe larger ZT of 6.2 in 8 ML clean Vacuum barrier, where the heavily restrained thermal conductance should be responsible for. Thermo-STT in Fe/Vac/Fe MTJs show same order as that in Fe/MgO/Fe MTJs with similar barrier thickness.     

Dynamics of spin transport in voltage-biased Josephson junctions

We investigate spin transport in voltage-biased spin-active Josephson junctions. The interplay of spin filtering, spin mixing, and multiple Andreev reflection leads to nonlinear voltage dependence of the dc and ac spin current. We compute the voltage characteristics of the spin current (IS) for superconductor-ferromagnet-superconductor Josephson junctions. The subharmonic gap structure of IS(V) is shown to be sensitive to the degree of spin mixing generated by the ferromagnetic interface, and exhibits a pronounced even-odd effect associated with spin transport during multiple Andreev reflection processes. For strong spin mixing both the magnitude and the direction of the dc spin current can be sensitively controlled by the bias voltage.     

Photocurrent spin diode: Electrically controlled sign reversal of current polarization

We report a study of spin-dependent transport through a quantum dot irradiated by continuous circularly polarized light resonant to the electron-heavy hole transition. We use the nonequilibrium Green's function to calculate the spin accumulation, spin-resolved currents, and current polarization in the presence of an external bias and intradot Coulomb interaction. It is found that for a range of external biases sign reversal of the current polarization can be modulated. The system thus operates as a rectifier for spin current polarization. This effect follows from the interplay between the external irradiation and the Coulomb repulsion. The spin-polarized transport through a three-terminal device is also discussed. Spin current with high polarization could be obtained due to spin filter effect.