Alloy formation at the Ni–Al interface for nickel films deposited on Al(110) surfaces

Alloy formation at the Ni–Al interface for thin nickel films deposited on Al(110) surfaces has been studied using high-energy ion scattering/channeling (HEIS) and X-ray photoelectron spectroscopy (XPS). For nickel atoms deposited at room temperature on Al(110), a large amount of nickel–aluminum intermixing occurs at the interface. For the first two monolayers (ML) of deposited nickel, an NiAl-like compound is formed. The intermixing continues with a different rate, forming an Ni₃Al-like compound for nickel coverages from 2 to 8 ML, at which point a nickel metal film begins to grow on the surface. Nickel atoms deposited at 250°C on the Al(110) surface exhibit no surface compound formation, but diffuse up to 400 Å into the aluminum substrate. Interatomic potentials based on the embedded-atom method (EAM) are used in a Monte Carlo approach to simulate the evolution of the Ni–Al(110) interface as a function of the nickel coverage. The calculated ion-scattering yields and X-ray photoelectron intensities from nickel and aluminum atoms in these simulated interfaces are in good quantitative agreement with the experimental results. The simulations show a high-density Ni–Al alloy forming at the Al(110) surface which apparently inhibits outward diffusion of aluminum, leading to the more nickel-rich alloy and finally nickel film growth. The ion-scattering simulations show an unusually large amount of backscattering occurring below the Ni–Al(110) interface, apparently associated with defocusing of the incident ion beam.     

Al(111)/Al_3Li(111)的界面性质

运用基于第一性原理的平面波贋势法,计算研究了Al (111)/Al_3Li (111)的界面性质.结果表明:Al (111)/Al_3Li (111)的界面具有三种原子配位关系结构,其中界面处仍保持与基体Al一致的三明治堆垛构型的界面稳定性最好.计算表明,该结构界面最薄弱层,位于Al_3Li (111)内,其分离功最小(约1.53 J/m~2),强度最弱,而基体Al和Al_3Li内部的强度随着到界面距离的增大而逐渐增强.     

Phase Characterization of Diffusion Soldered Ni/Al/Ni Interconnections

The formation and growth of intermetallic phases in the Ni-Al system during a novel joining process for Ni/Ni interconnections based on diffusion soldering has been studied. The Ni/Al/Ni bonds were accomplished by isothermal solidification and subsequent interdiffusion of Ni and Al in the Ni/Al/Ni joints held at a temperature of 720°C. Optical and scanning electron microscopy, electron probe microanalysis and X-ray diffraction analysis were used to characterize the microstructural changes as a function of the reaction time. The following phases appeared sequentially: liquid Al → Al₃Ni → Al₃Ni₂ → AlNi (stoichiometric) → AlNi (Ni-rich) → AlNi₃. At intermediate stages two to four phases coexisted. The NiAl phase occurred in two variants, namely a Ni-rich AlNi (60 at.% Ni) and stoichiometric AlNi. The joining process was completed after 30 h of reaction. Then only AlNi₃ was present in the Ni/Al/Ni interconnection zone. The quality of the resultant bond and the high melting point of the AlNi₃ phase (1360°C) indicate a great potential of the diffusion soldering for the joining of heat dissipating devices used in electronics and electrotechnics.     

Unusual Multilayer Surface Alloy: Al(100)-c(2 x 2)-2Li

An unusual multilayer surface alloy is formed by adsorption of one monolayer Li on Al(100). It is shown by low energy electron diffraction that the first three layers consist of a mixed Al-Li layer, a pure Al layer, and a second Al-Li layer. Thus the alloy has the same layer stoichiometry as the (100) surface of the metastable Al(3)Li bulk alloy. However, the relative orientation of the two mixed layers is the same as that in the Al(3)Ti-type structure. These findings are confirmed by total-energy calculations, which lead further to the prediction that the bulk Al(3)Li alloy has a faulted, Al(3)Ti-type surface.     

Epitaxial growth and magnetic exchange anisotropy in Fe3O4<Emphasis Type="Bold">/NiO bilayers grown on MgO(001) and Al</Emphasis>2O3(0001)

Epitaxial Fe3O4/NiO bilayers were epitaxially grown on MgO(001) and Al2O3(0001) substrates to investigate the influence of the fully spin compensated (001) and the non-compensated (111) NiO interface planes between the ferromagnetic (F) and antiferromagnetic (AF) layers on the AF/F exchange coupling. Bilayers of different magnetite thicknesses and constant NiO thickness were investigated. The structural characterizations indicate a perfect epitaxy of the two layers for the both growth directions in the two Fe3O4/NiO/MgO(001) and NiO/Fe3O4/Al2O3(0001) systems. An epitaxial ferrimagnetic (Ni,Fe)Fe2O4 phase is observed at the AF/F interface when the NiO oxide is grown on the top of the Fe3O4 layer while a perfectly flat AF/F interface is observed in the Fe3O4/NiO/MgO(001) system exhibiting only a very slight interdiffusion. Magnetic measurements indicate a relative strong bias at 300 K for the bilayers grown on Al2O3(0001), which decreases with the inverse of the ferrimagnetic layer thickness as theoretically expected. On the contrary, a zero exchange biasing is observed at 300 K for the bilayers grown on MgO(001).     

Adsorption of methanol on Ni3Al(1 1 1) and NiAl(1 1 0): A high resolution PES study

The adsorption of methanol on Ni₃Al(1 1 1) and NiAl(1 1 0) has been studied using high resolution photoemission spectroscopy (HR-PES) and density functional theory (DFT). Both methanol and methoxy are formed on these surfaces after the initial methanol exposure at low temperatures. Heating to 200 K leads to further formation of methoxy. On NiAl(1 1 0) two different methoxy species are observed where the first is formed upon methanol adsorption, and the other results from methanol decomposition during heating. The DFT calculations show that methanol and methoxy interacts with the Al atoms on both surfaces. Methanol is found to bond through the oxygen atom to the Al on-top site on Ni₃Al(1 1 1) and NiAl(1 1 0) with the C–O axis tilted with respect to the surface normal. On Ni₃Al(1 1 1) methoxy is situated in a 2Ni+Al hollow site, whereas on NiAl(1 1 0) the Al–Al bridge site is preferred.     

Growth of ultrathin Pd films on Al(001) surfaces

High-energy ion backscattering spectroscopy (HEIS) and X-ray photoelectron spectroscopy (XPS) were used to determine the growth mode and the interface structure of ultrathin Pd films deposited on Al(001) surfaces at room temperature. Measured Al and Pd surface peak areas for MeV He⁺ ions incident normal to the surface show that Pd atoms intermix with and displace Al substrate atoms. The mixing continues for Pd coverages from 0–5 monolayers, at which point a Pd metal film begins to grow on the alloy surface. XPS measurements of the Pd 3d photopeaks show a chemical shift that is consistent with the formation of an AlPd-like compound during the mixing phase, and Pd metal thereafter. HEIS results further reveal that the alloyed overlayer as well as the Pd metal film have some degree of axial alignment with respect to the Al substrate. The XPS intensity measurements are consistent with this two-stage growth model.     

Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing

Solid reactions between Ni and relaxed Si_0.7Ge_0.3 substrate were systematically investigated with different Al interlayer thicknesses. The morphology, composition, and micro-structure of the Ni germanosilicide layers were analyzed with different annealing temperatures in the appearance of Al. The germanosilicide layers were characterized by Rutherford backscattering spectrometry, cross-section transmission electron microscopy, scan transmission electron microscopy, and secondary ion mass spectroscopy. It was shown that the incorporation of Al improved the surface and interface morphology of the germanosilicide layers, enhanced the thermal stabilities, and retarded the Ni-rich germanosilicide phase to mono germanosilicide phase. With increasing annealing temperature, Al atoms distributed from the Ni/Si_0.7Ge_0.3 interface to the total layer of Ni₂Si_0.7Ge_0.3, and finally accumulated at the surface of NiSi_0.7Ge_0.3. We found that under the assistance of Al atoms, the best quality Ni germanosilicide layer was achieved by annealing at 700 ℃ in the case of 3 nm Al.     

The interface structure and band alignment at alumina/Cu(Al) alloy interfaces—Influence of the crystallinity of alumina films

Both epitaxial and amorphous ultra-thin alumina films were grown on a Cu-9 at.%Al(1 1 1) substrate by selective oxidation of Al in the alloy in ultra high vacuum. The crystallinity of the alumina films was controlled by oxidation temperature. The photoelectron spectra of Al 2p, O 1s and valence band were measured in-situ during oxidation. The influence of the crystallinity on the interface structure between the alumina films and the substrate was discussed by analyzing the Al 2p spectra composed of multiple peaks. The energy difference between the Fermi level of the substrate and the valence band maximum of the alumina films (band offset) was derived from the valence band spectra. The energy band alignment at the interface between each of the two alumina films and the substrate was revealed by combining the binding energy values of the core levels with the band offset values. The influence of the alumina crystallinity on the band alignment was discussed.     

Electronic structures and mechanical properties of Al(111)/ZrB2(0001) heterojunctions from first-principles calculation

Employing first-principles density functional theory (DFT), the structures and electronic and mechanical properties of Al(111)/ZrB₂(0001) heterojunctions are investigated. It is found that both B-terminated ZrB₂(0001) and Zr-terminated ZrB₂(0001) can form heterojunction interfaces with Al(111) surface. The heterojunction with B-terminated ZrB₂(0001) is demonstrated to be most stable by comparing the surface adhesion energies of six different heterojunction models. In the stable configurations, the Al atom is found projecting to the hexagonal hollow site of neighbouring boron layer for the B-terminated ZrB₂(001), and locating at the top site of the boron atoms for Zr-terminated ZrB₂(001) interface. The mechanisms of interface interaction are investigated by density of states, charge density difference and band structure calculations. It is found that covalent bonds between surface Al atoms and B atoms are formed in the B-terminated heterojunction, whereas the Al atoms and Zr atoms are stabilised by interface metallic bonds for the Zr-terminated case. Mechanical properties of Al/ZrB₂ heterojunctions are also predicted in the current work. The values of moduli of Al/ZrB₂ heterojunctions are determined to be between those of single crystal Al and ZrB₂, which exhibit the transition of mechanical strength between two bulk phases. DFT calculations with the current models provide the mechanical properties for each heterojunction and the corresponding contributions by each type of interface in the composite materials. This work paves the way for industrial applications of Al(111)/ZrB₂(0001) heterojunctions.     

Nonstoichiometric interfaces and Al2O3 adhesion with Al and Ag

We have determined the relative stability of stoichiometric, oxygen-rich, and aluminum-rich Al/Al 2O (3) and Ag/Al 2O (3) interfaces from first principles. Stable structures vary significantly with oxygen chemical potentials. Computed works of adhesion agree reasonably well with sessile drop experimental values, including correlation with measured oxygen chemisorption effects on Ag. The ordering of predicted bond energies of the interfaces, ceramics, and metals seems consistent with monotonic and fatigue fracture experiments.     

磁控溅射沉积铝/贫铀与金/贫铀镀层的界面研究

采用磁控溅射技术沉积制铝/贫铀/铝(Al/DU/Al)、金/贫铀/金(Au/DU/Au) "三明治" 薄膜样品. 利用高分辨扫描电镜、 X射线衍射仪、X射线光电子能谱仪、 扫描俄歇微探针对Al/DU/Al, Au/DU/Au样品的Al/DU, Au/DU界面行为进行表征与研究. 结果表明: 沉积态DU层以柱状晶生长; Al/DU界面扩散明显, 物理扩散过程中伴随着Al, DU化学反应形成Al₂U, Al₃U金属化合物; 金属化合物的形成导致界面处Al 2p电子结合能向高能端移动, U 4f电子向低能端移动; 微量O在Al/DU界面处以Al₂O₃及铀氧化物形式存在; DU镀层中以铀氧化形式存在; 沉积态的Au/DU界面扩散为简单的物理扩散, 团簇效应导致Au/DU界面处Al 2p, U 4f电子结合能均向高能端移动; 在Au/DU界面及DU镀层中, 微量O以铀氧化物形式存在; Al/DU界面扩散强于Au/DU; 相同厚度的Al, Au保护镀层, Al镀层保护效果优于Au镀层. 关键词： Al/DU界面 Au/DU界面 磁控溅射 界面扩散     

Structure and phase composition of the intermetallide Ni3Al+0.5 at.% B synthesized under pressure

We have used x-ray structural analysis, together with transmission and scanning electron microscopy, to study the phase composition, structure, and elemental distribution in the intermetallide Ni₃Al+0.5 at.% B, produced by self-propagating high-temperature synthesis under pressure. It is shown that the synthesized material is an ordered alloy of the type L1₂. The phase composition of the alloy Ni₃Al+0.5 at.% B is represented by the phases Ni₃Al (the fundamental phase), grains of a layered NiAl composition, and inclusions of Ni₃B. The latter is found inside the Ni₃Al grains, in the form of surrounded particles, and at dislocations and at grain boundaries in the NiAl phase. Institute for the Physics of Strength and Materials Production. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 59–64, September, 1996.     

Surface interactions of Au(I) cyclo-trimer with Au(111) and Al(111) surfaces: A computational study

A plane-wave density functional theory (DFT) study on surface interactions of a cyclo-[Au(μ-Pz)]₃ monolayer (denoted as T), Pz = pyrazolate, with Au(111) and Al(111) surfaces (denoted as M′) has been performed. Structural and electronic properties at the M′–T interfaces are determined from individually optimized structures of M′, T and M′–T. Results show that the gold pyrazolate trimer (T) binds more strongly on the Au(111) surface than on Al(111). Charge redistribution has been observed at both M′–T interfaces, where charge is “pushed” back towards the Au(111) surface from the trimer monolayer in Au(111)–T system, while the opposite happens in the Al(111)–T system where the charge is being pushed toward the trimer monolayer from the Al(111) surface. Considerable changes to the work function of Au(111) and Al(111) surfaces upon the trimer adsorption which arise from monolayer vacuum level shifts and dipole formation at the interfaces are calculated. The interaction between cyclo-[Au(μ-Pz)]₃ with metal surfaces causes band broadening of the gold pyrazolate trimer in M′–T systems. The present study aids better understanding of the role of intermolecular interactions, bond dipoles, energy-level alignment and electronic coupling at the interface of metal electrodes and organometallic semiconductor to help design metal–organic field effect transistors (MOFETs) and other organometallic electronic devices.     

Microstructural evolution and phase transformation in the liquid-solid Al/Ni diffusion couple

The liquid-solid Al/Ni diffusion couple was successfully fabricated by annealing at 1373?K for 48?h followed by water-quenching. Cross-sectional scanning and transmission electron microscopic analyses show that the multilayered diffusion zones comprise the following sequence of layers: γ-Ni(Al) | γ′-Ni₃Al | β′-NiAl | Ni-rich β-NiAl | β-NiAl. The Ni-rich β-NiAl upon quenching undergoes a martensitic transformation from β (B2) to β′ (L1₀). The β′ martensite is found to be internally twinned on the {111}<112>system. The volume changes and strains due to martensitic phase transformation, the precipitation of γ′-Ni₃Al from γ-Ni(Al) and lattice mismatch between Ni-rich β-NiAl and β-NiAl in the Al/Ni diffusion couple are quantitatively determined. The cuboidal γ′ phase coherently precipitates cube-on-cube in γ-Ni(Al). Composition fluctuations existing in the supersaturated solid solution γ-Ni(Al), provide sufficient driving force for the precipitation and facilitate nucleation and growth of the γ′ phase under isothermal annealing.     

Microstructure and mechanical properties of continuous Al2O3 fibre reinforced Ni45Al45Cr7.5Ta2.5 alloy (IP75) matrix composites

Single crystalline Al₂O₃ fibres (sapphire), coated with the NiAl alloy IP75 by physical vapour deposition (PVD), were assembled to fabricate composites by means of diffusion bonding. The microstructure and chemistry of both as-coated fibre and as-diffusion bonded composites were investigated by electron microscopy and microanalysis. The interface shear stress for complete debonding was measured by fibre push-out tests at room temperature, and the composite tensile strength was measured at 900°C and 1100°C. An amorphous layer with a thickness of about 400?nm formed between the fibre and the matrix during the PVD process and was maintained during diffusion bonding. A Laves phase precipitated along NiAl grain boundaries in the IP75 matrix. This caused a lower tensile strength of the IP75/Al₂O₃ composite at high temperatures compared to as-cast monolithic IP75 and rendered the composite useless for structural applications.     

Associative versus dissociative adsorption of water on Al(100)

The adsorption of water on Al (100) at 100 K has been studied using Fourier transform infrared-reflection absorption spectroscopy (FTIR-RAS), nuclear reaction analysis (NRA) and work function measurements (Δφ). All results are consistent with molecular adsorption, as no evidence was found for other possible dissociation products such as atomic O or D (H) at this temperature. By condensing alternating layers of D₂O and H₂O, it was found that a narrow feature in the _v(OD) (_v(OH)) region of the spectrum at 2720 cm⁻¹ (3700 cm⁻¹) is associated with non-hydrogen bonded OD (OH) groups in water molecules existing at the ice-vacuum interface. Surface hydroxyl groups resulting from dissociative adsorption exhibit a broader O-D stretch at 2760 cm⁻¹.     

A first-principles study of oxygen adsorption and interaction with Al adatoms on Al(110)

We use first-principles density-functional theory to identify several stable binding sites for adsorbed O₂ and O on Al(110). Our calculations indicate that it is energetically favorable for O₂ to dissociate to two atoms on Al(110). When O₂ dissociates, it is energetically favorable for the resulting O atoms to exist as dimers. We identify several possible configurations for O dimers on this surface, and quantify atomic interactions between an Al adatom and these dimers. Our work provides insight into the initial stages of oxidation of Al(110), as well as the role of oxygen impurities in Al thin-film epitaxy.     

Growth of Ni-Al alloys on Ni(1 1 1), from Al deposits of various thicknesses: (II) Formation of NiAl over a Ni3Al interfacial layer

This paper describes the second part of a study devoted to the growth of thin Ni-Al alloys after deposition of Al on Ni(1 1 1). In the previous paper [S. Le Pévédic, D. Schmaus, C. Cohen, Surf. Sci. 600 (2006) 565] we have described the results obtained for ultra-thin Al deposits, leading, after annealing at 750 K, to an epitaxial layer of Ni₃Al(1 1 1). In the present paper we show that this regime is only observed for Al deposits smaller than 8 × 10¹⁵ Al/cm² and we describe the results obtained for Al deposits exceeding this critical thickness, up to 200 × 10¹⁵ Al/cm². Al deposition was performed at low temperature (around 130 K) and the alloying process was followed in situ during subsequent annealing, by Auger electron spectroscopy, low energy electron diffraction and ion beam analysis-channeling measurements, in an ultra-high vacuum chamber connected to a Van de Graaff accelerator. We evidence the formation, after annealing at 750 K, of a crystallographically and chemically well-ordered NiAl(1 1 0) layer (whose thickness depends on the deposited Al amount), over a Ni₃Al “interfacial” layer (whose thickness—about 18 (1 1 1) planes—is independent of the deposited Al amount). The NiAl overlayer is composed of three variants, at 120° from each other in the surface plane, in relation with the respective symmetries of NiAl(1 1 0) and Ni₃Al(1 1 1). The NiAl layer is relaxed (the lattice parameters of cc-B2 NiAl and fcc-L1₂ Ni₃Al differ markedly), and we have determined its epitaxial relationship. In the case of the thickest alloyed layer formed the results concerning the structure of the NiAl layer have been confirmed and refined by ex situ X-ray diffraction and information on its grain size has been obtained by ex situ Atomic Force Microscopy. The kinetics of the alloying process is complex. It corresponds to an heterogeneous growth leading, above the thin Ni₃Al interfacial layer, to a mixture of Al and NiAl over the whole Al film, up to the surface. The atomic diffusion is very limited in the NiAl phase that forms, and thus the progressive enrichment in Ni of the Al film, i.e. of the mean Ni concentration, becomes slower and slower. As a consequence, alloying is observed to take place in a very broad temperature range between 300 K and 700 K. For annealing temperatures above 800 K, the alloyed layer is decomposed, Al atoms diffusing in the bulk of the substrate.     

A phase-field study of the aluminizing of nickel

A quantitative phase-field approach for multiphase systems that is based upon CALPHAD free energies is used to model the aluminization of nickel wires, wherein vapour-phase alloying is used to deposit Al on the surface of the Ni wire and then the wire is annealed so that to remove all Al gradients and achieve a homogenous Ni-Al alloy. Both processes are modelled and numerical results are compared with experiments. It is found that the kinetics of both processes is controlled by bulk diffusion. During aluminization at 1273 K, formation and growth of intermetallics, Ni₂Al₃ NiAl and Ni₃Al, are strongly dependent on the Al content in the vapour phase. Ni₂Al₃ growth is very fast compared with NiAl and Ni₃Al. It is also found that an intermediate Al content in the vapour phase is preferable for aluminization, since the Ni₂Al₃ coating thickness is difficult to control. Ni₂Al₃ is found to disappear in a few minutes during homogenization at 1373 K. Thereafter, the NiAl phase, in which the composition is highly non-uniform after aluminization, continues growing until the supersaturation in this phase vanishes. Then, NiAl coating disappears concomitantly with the growth of Ni₃Al, which disappears thereafter. Finally, the Al concentration profile in Ni(Al) homogenizes.