Dependence of nitrogen vacancy color centers on nitrogen concentration in synthetic diamond

Crystallization of diamond with different nitrogen concentrations was carried out with a FeNiCo-C system at pressure of 6.5 GPa. As the nitrogen concentration in diamond increased, the color of the synthesized diamond crystals changed from colorless to yellow and finally to atrovirens (a dark green). All the Raman peaks for the obtained crystals were located at about 1330 cm^-1 and contained only the sp³ hybrid diamond phase. Based on Fourier transform infrared results, the nitrogen concentration of the colorless diamond was < 1 ppm and absorption peaks corresponding to nitrogen impurities were not detected. However, the C-center nitrogen concentration of the atrovirens diamond reached 1030 ppm and the value of A-center nitrogen was approximately 180 ppm with a characteristic absorption peak at 1282 cm^-1. Furthermore, neither the NV⁰ nor the NV^- optical color center existed in diamond crystal with nitrogen impurities of less than 1 ppm by photoluminescence measurement. However, Ni-related centers located at 695 nm and 793.6 nm were observed in colorless diamond. The NE8 color center at 793.6 nm has more potential for application than the common NV centers. NV⁰ and NV^- optical color centers coexist in diamond without any additives in the synthesis system. Importantly, only the NV^- color center was noticed in diamond with a higher nitrogen concentration, which maximized optimization of the NV^-/NV⁰ ratio in the diamond structure. This study has provided a new way to prepare diamond containing only NV^- optical color centers.     

Surface resistance measurements at the metal/electrolyte interface of Ag(100) and Ag(111) thin film electrodes

The conductivity of thin film metal electrodes with a thickness of the order of the mean free path of the conduction electrons (50 nm at 300 K) is sensitive to several processes on the metal surface (e.g. adsorption and desorption of ions). We developed epitaxially grown Ag(100)/MgO(100) and Ag(111)/TiO₂(110) electrodes of 20 nm thickness. The change in the surface resistance of Ag(100) thin film electrodes during adsorption of the halide ions Cl⁻, Br⁻ and I⁻ shows the different strengths of specific adsorption. We investigated the phase transition of thiocyanate (SCN⁻) on Ag(100) electrodes by combining the surface resistance method with voltammetric, capacitance and ex-situ XPS measurements. The influence of adsorbed uracil on the resistance of Ag(100) films was demonstrated. The surface resistance is very sensitive to small concentrations of metal cations (e.g. Tl⁺). The surface resistance of Ag(100) and Ag(111) thin film electrodes shows the typical difference in the stripping potential of Tl⁺ of about 100 mV.     

Luminescence and OSL study of the inorganic compounds Tl-doped (NH4)2BeF4 and (NH4)2SiF6

The search of materials with efficient optically stimulated luminescence (OSL) properties and a high hydrogen content for fast neutron dosimetry has led to the development of Tl⁺-doped ammonium salts (NH₄)₂SiF₆ and (NH₄)₂BeF₄. Preliminary OSL studies have shown that the OSL in (NH₄)₂SiF₆:Tl⁺ and (NH₄)₂BeF₄:Tl⁺is efficient. In order to optimise the OSL emission and its detection, the identification of the luminescent centres in the OSL process is necessary. This study focuses on the identification of the luminescent centres associated with Tl⁺ based on optical studies in the vacuum UV (VUV) at different temperatures.     

Observation of photon recoil effects in single-beam absorption spectroscopy with an ultracold strontium gas

We report on observing photon recoil effects in the absorption of a single monochromatic light at 689 nm through an ultracold ⁸⁸Sr gas,where the recoil frequency is comparable to natural linewidth of the narrow-line transition 5s^{2 1}S₀-5s5p ³P₁ in strontium.In the regime of high-saturation,the absorption profile becomes asymmetric due to the photon-recoil shift,which is of the same order as the natural linewidth.The lineshape is described by an extension of the optical Bloch equations including the momentum transfers to atoms during emission and absorption of photons.Our work reveals the photon recoil effects in a simplest single-beam absorption setting,which is of significant relevance to other applications such as saturation spectroscopy,Ramsey interferometry,and absorption imaging.     

Cu掺杂天然方钠石的VUV-Vis发光特性

采用高温固相法制备了Cu掺杂天然方钠石光致发光粉末。使用电子探针能谱分析（EDS）和微区分析（EPMA）测出了天然方钠石所含的主要化学成分。用X射线衍射（XRD）研究了Cu掺杂对方钠石结构的影响。室温下测量了真空紫外-紫外-可见光光谱。结果表明,激发光谱中171 nm处的激发带属于基质吸收;202,255,280,290 nm左右的激发带是Cu⁺离子的3d¹⁰→3d⁹4s跃迁引起的。Cu在方钠石晶体中以两种位置存在,分别为Cu⁺离子在Na⁺离子晶格位置上出现的Cu1位置和复合层间的Cu2位置,并形成Cu⁺ 离子的Cu1和Cu2发光中心。用不同波长光激发Cu1和Cu2发光中心得到的峰值分别位于420 nm和470 nm的蓝色荧光来源于Cu⁺离子内的3d⁹4s→3d¹⁰电子跃迁。对样品的发光机理及浓度猝灭过程进行了探讨和研究。     

一步溶液法制备ZnO亚微米晶体棒及其发光性能

用硝酸锌(Zn(NO₃)₂·4H2O)或醋酸锌(Zn(CH₃COO)₂·2H2O)分别与六亚甲基四胺((CH₂)₆N₄)以等浓度0.005mol/L配制成两种反应溶液,通过化学溶液法在玻璃衬底上生长出ZnO六角型亚微米棒(长5~8μm,直径300~700nm)。测量了样品的XRD和扫描电镜像。经XRD分析,所得样品均为纤锌矿的ZnO六角型晶体。扫描电镜(SEM)像表明,生长时间为3h或5h时,样品为细长条的棒状结构,长径比超过10:1;生长48h后的ZnO亚微米棒的一端被腐蚀成一定深度的ZnO亚微米管。用负离子配位四面体生长模型分析了ZnO亚微米棒的生长机理。ZnO亚微米棒退火前后的光致发光谱表明,退火处理后的发射谱中的紫外峰消失,而红色发光峰红移并且增强(峰值由630nm左右移到710nm),同时它的激发光谱中的室温激子激发峰也增强。     

Ionic conductivity and phase stabilization in Cu- and Tl-substituted CsAg2I3

Samples of general formula CsAg_2−xM_xI₃, x=0–0.4 and M=Cu and Tl, have been prepared and studied by powder X-ray diffraction, DSC and electrical conductivity measurements. X-ray diffractograms and DSC curves showed the possibility of stabilizing the high-temperature -phase at lower temperatures in Tl-substituted samples, while such results were not obtained in Cu-substituted samples. Ionic conductivity measurements showed two regions corresponding to the low- and high-temperature phases. The transition temperature between the two phases was found to remain unchanged with the addition of Cu⁺ and decreased gradually with increasing Tl⁺. The ionic conductivity decreased in Cu-substituted samples and enhanced with the incorporation of Tl⁺ ion in the lattice of CsAg₂I₃. Dielectric constant was found to show behaviour similar to that of the ionic conductivity, and this is an evidence of the predominant effect of ion hopping on this property.     

两种宽谱带蓝光发射材料的制备、表征及光学特性

合成了两种以钙为中心金属离子的有机电致发光材料2-(2-羟基苯基)苯并噻唑钙Ca(BTZ)₂和2-(2-羟基苯基苯并噻唑)-(1,10-邻菲罗啉)合钙Ca(BTZ)₂phen。通过红外光谱、紫外-可见光吸收光谱、循环伏安曲线、原子力显微镜以及光致发光光谱表征了材料的结构、光学带隙、能带结构、成膜性以及光学性能。实验结果表明,在DMSO溶液中,Ca(BTZ)₂的紫外吸收峰主要为290,330,422nm;Ca(BTZ)₂phen的紫外吸收峰主要为292,330,428nm。Ca(BTZ)₂的荧光发射峰为458nm和500nm,色坐标为x=0.2176,y=0.3223;Ca(BTZ)₂phen的荧光发射峰主要为465nm和514nm,色坐标为x=0.2418,y=0.3817。利用真空热蒸镀法可以得到均匀致密的Ca(BTZ)₂phen的薄膜,其粗糙度为1.56。Ca(BTZ)₂薄膜也有望通过旋涂制备。实验发现Ca(BTZ)₂与Ca(BTZ)₂phen的荧光光谱几乎覆盖整个可见光区域,为宽谱带发光材料,有望设计成合理的器件结构实现白光发射。     

掺Yb硅酸盐玻璃的热漂白性能研究

采用传统高温熔融法制备了掺Yb硅酸盐玻璃, 玻璃组成为 60SiO₂-12Al₂O₃-28CaO-1.0 mol%Yb₂O₃. 将玻璃分成两组, 一组经总剂量3 kGy的Co⁶⁰γ辐射源辐射, 另一组做空白对照. 然后测试了玻璃未辐射、辐射后及热漂白后的吸收谱和近红外发光谱. 实验结果表明: 一定的热处理会使得玻璃在辐射过程中产生的色心缺陷发生分解, 即辐射后的玻璃在300–900 nm波段的吸收系数显著地降低了, 在400 nm处未经辐射、经3 kGy辐射以及热漂白后的玻璃吸收系数分别是0.93, 2.9, 1.89 cm^-1. 另外, 玻璃的近红外发光强度明显增强, 在1028 nm处未经辐射、经3 kGy辐射以及热漂白后的玻璃近红外发光相对强度分别是588, 261, 436, 从而极大地改善了玻璃的光学性能. 所以一定的热处理可以使辐射后的玻璃产生热漂白的现象. 研究结果为进一步发展抗辐射玻璃材料提供了新的实验依据.     

新型电子俘获型光存储材料Sr2SnO4:Sb3+的发光性能研究

采用高温固相法在1300℃的温度获得了一种新型电子俘获型光存储材料 Sr₂SnO₄:Sb³⁺. 结果表明: 208 nm (Sb³⁺ 的¹S₀→¹P₁)和265 nm (¹S₀→³P₁)的紫外光是Sr₂SnO₄:Sb³⁺ 的最有效信息写入光源; 其发射是覆盖400---700 nm的宽带(³P_0,1→^XXS₀), 肉眼可看到淡黄色白光, 色坐标为(0.341, 0.395). 热释光谱研究结果表明: Sr₂SnO₄:Sb³⁺ 有分别位于39℃, 124℃, 193℃和310℃的四个热释峰. 其中, 39~℃的热释峰强度很低, 因而Sr₂SnO₄:Sb³⁺ 只具有不到140 s的微弱余辉. 而310℃的高温热释峰在空置1天后, 仍能保持约45.6%的初始强度, 并对980 nm的红外光有很好的红外上转换光激励响应. 因此, Sr₂SnO₄:Sb³⁺ 是一种具有一定的信息存储应用潜力的新型光存储发光材料.     

Radiation defects in Ce-activated fluorobromozirconate glass-ceramic X-ray storage phosphors

We report on a photostimulated luminescence (PSL) effect in Ce-doped fluorobromozirconate glasses. Small hexagonal or orthorhombic BaBr₂ crystallites are formed in the glass upon annealing. The PSL shows a (381,415) nm doublet which is due to the 5d–4f luminescence of Ce³⁺ in the orthorhombic BaBr₂ crystallites embedded in the glass matrix. The stimulation band of the PSL peaking at 580 nm is probably due to perturbed F centres in the crystallites. After X-irradiation the magnetic circular dichroism of the optical absorption showed a broad band in the spectral range between 440 and 800 nm, having a derivative-like line shape centred at about 600 nm. The spectrum consists of two overlapping bands: one, derivative-like, belongs probably to F-centres, whereas the second band, superimposed on the low-energy region of the F-centre band, is due to a hole centre.     

YNbO4：Tm3+/Yb3+上转换发光特性研究

按照50Nb₂O₅-（46-x）Y₂O₃-4Yb₂O₃-xTm₂O₃（x=0.1,0.2,0.5,1,2）的配比方式,采用高温固相法制备出了掺杂Tm³⁺/Yb³⁺的YNbO₄晶体粉末。在980 nm红外光激发下,观测到波长为478,645,707 nm的上转换荧光,分别对应于Tm³⁺离子的¹G₄→³H₆、¹G₄→³F₄、³F₃→³H₆能级跃迁过程。利用上转换发射功率与980 nm激光器工作电流关系估算出跃迁过程吸收光子数目为2.72,2.69,2.01,从而确定出前两者为三光子吸收过程,最后一个对应于双光子吸收过程。运用Judd-Ofelt理论研究样品光谱特性,根据样品的吸收谱得到样品的谱线强度参数Ω_t（t=2,4,6）,进而得出理论振子强度及实验振子强度,二者均方根偏差δ_rms=1.299×10^-7。计算了Tm³⁺离子向下能级跃迁的跃迁几率、跃迁分支比等参数。最后得出结论：（1）³F₄能级寿命较长,适合作为上转换中间能级;（2）³H₅能级寿命较长,且³H₅→³H₆跃迁分支比（96.46%）接近100%,可用于产生1 216 nm激光。     

低能离子轰击后铌酸锂晶体表面层的性质

从实验中观察到,低能离子轰击后的铌酸锂晶体表面层在3500—6500?之间出现至少两个光吸收峰,表面的相对暗电导率增加两个数量级。这表明离子轰击后的铌酸锂中产生了附加的光吸收和电导激活中心。在离子轰击过程中,由于某些原子基团和原子的优先溅射,在表面层中造成相当大的化学计量比偏离,它直接影响晶体的光学和电学性质。XPS(X射线电子能谱)测试结果证实,这一表面层的构成符合铌酸锂缺陷结构的空位模型。讨论了附加激活中心的成因,并据此解释了Ar⁺/O⁺混合离子轰击铌酸锂晶体所得到的结果。 关键词：     

外场作用下C12H4Cl4O2的分子结构和电子光谱研究

各种环境毒物危害着人类的生产生活,二噁英更是严重危害人类的健康.C₁₂H₄Cl₄O₂（2,3,7,8-tetrachlorodibenzo-p-dioxin,TCDD）是二噁英中毒性最强的化合物,也是目前已知毒性最强的污染物.为研究TCDD外场效应,采用密度泛函理论方法优化了不同静电场0–0.025 a.u.（0–1.2856×10¹⁰ V/m）作用下TCDD分子的基态几何结构,得到了分子总能量;在此基础上,采用含时密度泛函理论方法对TCDD分子的紫外-可见（UV-Vis）吸收光谱在不同外电场下的变化进行了研究.结果表明：分子几何构型与电场大小呈现强烈的依赖关系,分子总能量随着外电场的增强而减小;伴随着外电场的增强,分子激发态的摩尔吸收系数逐渐减小,UV-Vis吸收峰显著红移.     

SrZn2(PO4)2:Sn2+,Mn2+荧光粉的发光性质及其能量传递机理

采用高温固相法制备了SrZn₂(PO₄)₂:Sn²⁺(SZ₂P:Sn²⁺), SrZn₂(PO₄)₂:Mn²⁺(SZ₂P:Mn²⁺), SrZn₂ (PO₄)₂:Sn²⁺, Mn²⁺(SZ₂P:Sn²⁺, Mn²⁺) 荧光粉. 通过X射线衍射、激发和发射光谱详细研究了荧光粉的物相和发光性质. 在SrZn₂(PO₄)₂ 基质中, Sn²⁺离子发射光谱是峰值位于461 nm宽带谱, 归属于Sn²⁺离子的³P₁→¹S₀能级跃迁, SZ₂P:Mn²⁺激发光谱由基质吸收带(200–300 nm)和位于352, 373, 419, 431和466 nm的一系列激发峰组成, 分别对应Mn²⁺离子的⁶A₁(⁶S)→⁴E(⁴D), ⁶A₁(⁶S)→⁴T₂(⁴D), ⁶A₁(⁶S)→[⁴A₁(⁴G), ⁴E(⁴G)], ⁶A₁(⁶S)→⁴T₂(⁴G)和⁶A₁(⁶S)→⁴T₁(⁴G)能级跃迁, 因此, SZ₂P:Sn²⁺ 的发射光谱与SZ₂P:Mn²⁺的激发光谱有较大范围的重叠. 结果表明Sn²⁺对Mn²⁺发光有明显的敏化作用. 基于Dexter电多极相互作用能量传递公式和Reisfeld近似原理分析, 荧光粉SZ₂P:Sn²⁺, Mn²⁺中Sn²⁺-Mn²⁺离子之间的能量传递机理属于电四极-电四极相互作用引起的共振能量传递, 并计算出Sn²⁺-Mn²⁺离子之间能量传递临界距离R_c ≈ 1.78 nm. 通过改变Sn²⁺, Mn²⁺离子掺杂浓度, 实现了荧光粉发光颜色的调节, 在254 nm短波紫外激发下荧光粉发出较强的蓝白光. 研究结果表明SZ₂P:Sn²⁺, Mn²⁺荧光粉有望应用于紧凑型节能灯照明领域, 随着半导体紫外芯片技术的发展, 有潜力应用于未来的白光发光二极管照明领域.     

锶原子光晶格钟自旋极化谱线的探测

87Sr原子存在核自旋,在磁场作用下原子能级会分裂成不同塞曼子能级.通过光抽运对原子进行自旋极化,其自旋极化谱线的探测为锶光钟系统的闭环锁定提供精确的频率参考.本文对~(87)Sr原子钟跃迁能级5s~2~1S_0→5s5p~3P_0中的m_F=+9/2和m_F=-9/2的塞曼磁子能级自旋极化谱线进行了探测.经过一级宽带冷却和二级窄线宽冷却与俘获后,锶冷原子温度为3.9μK,原子数目为3.5×10~6.利用邻近"魔术波长"的813.426 nm半导体激光光源实现水平方向的一维光晶格装载.采用归一化探测方法用线宽为Hz量级的698 nm钟激光对~1S_0→~3P_0偶极禁戒跃迁进行探测,在150 ms的探测时间下获得线宽为6.7 Hz的钟跃迁简并谱.在磁光阱竖直方向施加一个300 mGs的偏置磁场获得塞曼分裂谱,并通过689 nm的圆偏振自旋极化光进行光抽运,最终在探测时间为150 ms时,获得左右旋极化谱线线宽分别为6.2 Hz和6.8 Hz.     

Er3+/Yb3+共掺杂铋酸盐玻璃的上转换发光和能量传递

用高温熔融法制备了Er³⁺/Yb³⁺共掺杂的45Bi₂O₃-45GeO₂-10PbO玻璃,对玻璃样品进行了光谱测试,分析了上转换发光机制和Yb³⁺→Er³⁺的能量传递效率。通过Yb³⁺离子浓度对Er³⁺离子在铋酸盐玻璃中的上转换荧光强度影响的研究,得到Er³⁺质量分数为0.5%以及Yb³⁺质量分数为2.5%时上转换发光强度最大。研究结果表明,在970nm泵浦激发下,Er³⁺/Yb³⁺共掺杂B₄₅G₄₅P₁₀玻璃在532,545,673nm处产生较强的上转换绿光和红光,是一种较为理想的上转换发光基质材料。     

宽带腔增强吸收光谱技术应用于痕量气体探测及气溶胶消光系数测量

基于氙灯的非相干宽带腔增强吸收光谱系统, 并将其应用于痕量气体及气溶胶消光系数的测量. 该系统的探测灵敏度通过测量NO₂在520—560 nm波长范围内的吸收得到验证, 最小可探测灵敏度为1.8× 10^-7cm^-1 (1σ, 0.12 s积分时间, 50次平均), 对应的NO₂探测极限～33 nmol/mol. 结合标准气溶胶粒子发生系统, 测量了不同浓度的单分散硫酸铵气溶胶粒子在532 nm波长处的消光系数, 得到粒径为600 nm的硫酸铵气溶胶的消光截面为1.12× 10^-8cm², 与文献报道值1.167× 10^-8cm²相一致, 验证了气溶胶测量的可行性和准确性.     

Eu2+在磷酸镧中的发光及Ce3+→Eu2+的能量传递

采用高温固相反应合成了LaPO₄:Eu²⁺和LaPO₄:Ce³⁺,Eu²⁺样品,报道了Eu²⁺在LaPO₄中的发光性质和Ce³⁺→Eu²⁺的能量传递现象。文中探讨了Ce³⁺→Eu²⁺的能量传递机理,根据Dexter电多极相互作用的理论证明其为偶极子偶极子相互作用的共振能量传递。     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。