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通过对微晶硅太阳电池量子效率的测量,结合微区拉曼光谱和电学特性测试,讨论了本征层的硅烷浓度和等离子体辉光功率对太阳电池量子效率的影响.发现本征层硅烷浓度增加时,电池的长波响应变差,材料结构由微晶相演变成非晶相;等离子体辉光功率的增加造成了电池短波响应的变化.同时发现测量微晶硅太阳电池时使用掩膜板所得短路电流密度与量子效率积分获得的短路电流密度相差不大.将优化后的沉积参数应用于不锈钢柔性衬底的非晶硅/微晶硅叠层太阳电池,获得了9.28;(AM0,1353 W/m2)和11.26;(AM1.5,1000 W/m2)的光电转换效率. 相似文献
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VHF-PECVD制备不同氢稀释条件下硅薄膜特性分析 总被引:3,自引:3,他引:0
本文集中报导了不同硅烷浓度条件下,制备的系列硅薄膜电学特性和结构特性的分析研究。结果表明:随着硅烷浓度的逐渐减小,材料逐渐地由非晶向微晶转变。傅立叶变换红外吸收(FFIR)的测试结果表明:微晶硅材料存在着自然的不稳定性,表现为氧含量随着时间的推移而增多。而且,微结构因子(IR)的结果给出:对于适用于电池有源层的微晶硅材料来说,其IR不能太大,也不能太小,本实验中相对好的微晶硅材料其IR为31%。 相似文献
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用电致发光(EL)技术检测P型常规单晶硅太阳电池,发现角部发黑问题.研究其与电池制造工艺或单晶硅材料的相关性,测试正常和黑角电池片的电性能参数发现黑角电池光电转换效率低于19.90;.经腐蚀剥离电池分析基底单晶硅材料,发现黑角处材料的少子寿命比中心位置处低约50μs以上.用Schimmel A择优腐蚀液剥离黑角电池,在黑角位置的硅材料明显出现位错缺陷,且缺陷数量高于中心区域.经多项实验检测分析,初步得出EL测试出现黑角边问题的单晶硅电池与基底硅材料的原生缺陷有关. 相似文献
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We report on the development and application of n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) alloys in single and tandem junction thin film silicon solar cells. Single junction microcrystalline silicon (μc-Si:H) solar cells are prepared in n-i-p deposition sequence where n-type μc-SiOx:H films serve as window layers. In tandem solar cells, μc-SiOx:H layers are placed between amorphous (a-Si:H) and μc-Si:H component cells, serving as an intermediate reflector. The requirements for μc-SiOx:H layer depending on its application are discussed. Our results show that the optical, electrical and structural properties of μc-SiOx:H can be conveniently tuned over a wide range to fulfil various requirements for applications in both types of cells. Additionally, the properties of μc-SiOx:H layers appear to be substrate dependent, which should be taken into account when layers are utilized in cells. The advantages of low refractive index and high optical band gap allow to achieve high efficiencies of 9.2% and 12.6% for single junction and tandem solar cells, respectively. 相似文献
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Shunsuke Kasashima Taweewat Krajangsang Aswin Hongsingthong Hideaki Fujioka Porponth Sichanugrist Makoto Konagai 《Journal of Non》2012,358(17):2260-2263
Multi-junction silicon-based thin-film solar cells are attractive materials for further cost-reduction and high efficiency. Meanwhile, it is also well considered that a concentrator solar cell is another alternative approach to enhance the conversion efficiency. In concentrator solar cells, the photocurrent linearly increases with the concentration ratio of incident light. At the same time, the open-circuit voltage (Voc) of solar cells increases logarithmically with the photocurrent. This leads to an increase in efficiency with increasing sunlight intensity.We proposed a novel hetero-junction structure microcrystalline silicon (μc-Si:H) solar cell structure using wide-gap microcrystalline silicon oxide (μc-Si1 ? xOx:H) as p-layer and it has some advantages over conventional homo-junction μc-Si:H solar cells under low concentrations. It was observed that wide-gap doped layers can reduce carrier recombination rate especially in p-layer and at the p/i interface and Voc enhancement with increasing light intensity improves as the band gap of p-layer is increased. Our best solar cell has efficiencies of 9.2% at 1 sun and 10.4% at 11.8 suns. We also investigated the degradation behavior of hetero-junction μc-Si:H solar cells. The degradation in efficiency for this type of solar cell was less than 6%. Therefore, hetero-junction μc-Si:H solar cell is the promising alternative for low-light concentration. 相似文献
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《Journal of Non》2006,352(9-20):1105-1108
To study the electronic transport in highly n-doped microcrystalline silicon (n+-μc-Si:H) thin films, grain-boundary trapping model is implemented in AMPS (analysis of microelectronic and photonic structure)-1D. This approach is based on the traditional thermionic-emission model and considering the electronic transport parallel to the substrate. In spite of its simplicity, the model leads to the simulated values of activation energy, free carrier concentration, interface trap charge density and mobility which are in good agreement with the referred Hall effect measurement results for electron cyclotron resonance-chemical vapor deposited (ECR-CVD) highly n-doped μc-Si:H thin films. 相似文献
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《Journal of Non》2006,352(9-20):937-940
The high rate deposition of microcrystalline silicon (μc-Si:H) by means of the novel multi-hole-cathode very high frequency (MHC-VHF) plasma technique has been studied in the high-pressure depletion region (9.3 Torr). A distinct relationship between vacancy incorporation, the crystalline volume fraction and a qualitative measurement of the energy of the ions bombarding the substrate has been found. The observed relation is explained with the help of an ion-phase-diagram: we claim that the most energetic ions, containing at least one silicon atom, are responsible for the local amorphization of the μc-Si:H films via the ion induced Si bulk displacement mechanism. 相似文献
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《Journal of Non》2006,352(28-29):2943-2946
Hydrogenated microcrystalline silicon (μc-Si:H) films have a large number of grain boundaries that oxidize after deposition, leading to deterioration of device performance. In this study, post-treatment of μc-Si:H thin films was carried out with methane-related radicals generated by a hot wire. The effect of the hot-wire passivation on the properties of the μc-Si:H thin films was investigated using Fourier-transform infrared (FT-IR) transmission spectroscopy. Through post-treatment, hydrogen on the silicon-crystallite surface was substituted with hydrocarbon. Further, an increase in filament temperature (Tft) was found to enhance passivation. For films treated at Tft above 1700 °C, post-oxidation and nitridation hardly occurred, whereas films treated at Tft below 1400 °C were oxidized and nitrided even after post-treatment. 相似文献
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Y. Sobajima S. Kamanaru H. Muto J. Chantana C. Sada A. Matsuda H. Okamoto 《Journal of Non》2012,358(17):1966-1969
We have investigated the effects of temperature (during film growth and post-deposition thermal annealing) and H2-plasma treatment on the electronic and structural properties of p-type microcrystalline silicon films (p-μc-Si:H) for solar cell applications. The highest dark conductivity is obtained in the thermally annealed p-μc-Si:H prepared at low substrate temperature of 50 °C. This dark conductivity is decreased by two orders of magnitude when the film is exposed to H2-plasma, being completely restored after thermal annealing. Namely, reversible dual-conductivity cycle is observed between thermally annealed state and H2-plasma-treated state in p-μc-Si:H. The dual-conductivity cycle is accompanied with the reversible change in the infrared-absorption spectrum at around 1845 cm? 1 assigned as SiHB complex in p-μc-Si:H network structure. Taking into account of the reversible structural change by H2-plasma-exposure and thermal-annealing cycles, necessary process-procedure condition has been proposed for obtaining high photovoltaic performance in thin-film-Si solar cells with high quality p-μc-Si:H. 相似文献
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《Journal of Non》2006,352(9-20):896-900
In this study, employing a high-density, low-temperature SiH4–H2 mixture microwave plasma, we investigate the influence of source gas supply configuration on deposition rate and structural properties of microcrystalline silicon (μc-Si) films, and demonstrate the plasma parameters for fast deposition of highly crystallized μc-Si films with low defect density. A fast deposition rate of 65 Å/s has been achieved for a SiH4 concentration of 67% diluted in H2 with a high Raman crystallinity of Xc > 65% and a low defect density of (1–2) × 1016 cm−3 by adjusting source gas supply configuration and plasma conditions. A sufficient supply of deposition precursors, such as SiH3, as well as atomic hydrogen H on film growing surface is effective for the high-rate synthesis of highly crystallized μc-Si films, for the reduction in defect density, and for the improvement in film homogeneity and compactability. A preliminary result of p–i–n structure μc-Si thin-film solar cells using the resulting μc-Si films as an intrinsic absorption layer is presented. 相似文献
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We have studied the dark conductivity of a broad microstructural range of plasma deposited single phase undoped microcrystalline silicon (μc-Si:H) films in a wide temperature range (15–450 K) to identify the possible transport mechanisms and the interrelationship between film microstructure and electrical transport behavior. Different conduction behaviors seen in films with different microstructures are explained in the context of underlying transport mechanisms and microstructural features, for above and below room temperature measurements. Our microstructural studies have shown that different ranges of the percentage volume fraction of the constituent large crystallite grains (Fcl) of the μc-Si:H films correspond to characteristically different and specific microstructures, irrespective of deposition conditions and thicknesses. Our electrical transport studies demonstrate that each type of μc-Si:H material having a different range of Fcl shows different electrical transport behaviors. 相似文献
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Mehmet Günes Hamza Cansever Gökhan Yilmaz Vladimir Smirnov Friedhelm Finger Rudolf Brüggemann 《Journal of Non》2012,358(17):2074-2077
Metastability effects in microcrystalline silicon (μc-Si:H) thin films have been investigated using dark conductivity, σD, photoconductivity, σph, and sub-bandgap absorption methods. Nitrogen and inert gasses can cause reversible aging effect in conductivities but not in the sub-bandgap absorption. However, DI water and O2 gas treatment result in both reversible and nonreversible effects in conductivities as well as in the sub-bandgap absorption. Only oxygen affected the dark conductivity reversibly in amorphous silicon, a-Si:H, films, other results were unaffected from the aging and annealing processes applied. 相似文献
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J. Kočka T. Mates M. Ledinský H. Stuchlíková J. Stuchlík A. Fejfar 《Journal of Non》2008,354(19-25):2227-2230
Four series of intrinsic thin Si films were prepared by plasma enhanced chemical vapor deposition at standard and high growth rate conditions. We suggest a simple ‘μc-Si:H layer quality factor’ based on the ratio of subgap optical absorption coefficient values: α(1.4 eV)/α(1 eV). This ratio minimizes the light scattering effects for rough films and can serve as a reliable detection of the amorphous/microcrystalline structure transition and also as a figure of merit for the microcrystalline layer. The quality factor is evaluated for series of our samples with well known structure and also compared with samples from other laboratories with different deposition and measurement techniques. 相似文献