Detection of nanoscale ESD effect on GMR head signal using the wavelet transform technique: HBM and CDM cases

An electrical signal anomaly is an undesired signal and is difficult to detect by a commercial instrument due to its short duration and unpredictable fault on a signal. Since a GMR recording head is a stack of nanometer thick multilayers, in particular, a magnetic layer and conductor layers, for magnetic insulating spacers, it is very sensitive to electron movements. Visible damage is understandable and protectable but latent failure cannot be measured. It is possibly observed by using frequency-domain apparatus but certainly it is not real-time detection. Therefore, in order to detect a latent failure head affected by ESD in the time domain, current conventional instruments are ineffective. In this study, the wavelet transform technique using the 4th order Daubechies is proposed to detect the glitches on a magnetic recording head signal in the time domain. It is found that the glitches occur when the ESD level of the charged device model (CDM) and human body model (HBM) on giant magnetoresistive (GMR) heads are in ranges of 6–15 V and 40–120 V, respectively. The electrical test parameters and scanning electron microscope (SEM) photo of the recording heads show no visible change in reader sensor. To ensure the results, the GMR damage is observed by SEM when the CDM-ESD and HBM-ESD are 10 V and 130 V, respectively. The glitches in the magnetic response signal of the GMR head are found to increase when the ESD level is increased. Thus, the Daubechies wavelet transform technique can be a novel approach to detect the pre-degradation of a GMR head due to an ESD effect.     

Micromagnetic Simulation of Transfer Curve in Giant-Magnetoresistive Head

The transfer curve of the giant-magnetoresistive （GMR） magnetic head represents its most important property in applications, and it is calculated by the micromagnetic modeling of the free layer and the pinned layer in the heart of the GMR head. Affections of the bias hard magnetic layer and the anti-ferromagnetic pinning layer are modeled by effective magnetic fields. The simulated transfer curve agrees with experiment quite well, therefore the values of these effective magnetic fields can be determined by the model. A synthetic antiferromagnetic spin valve structure GMR head is also analyzed for comparison.     

Triboelectrification of materials used in tape heads

Triboelectrification of tapes by read/write heads can result in either increased error rates or permanent damage to the heads through electrostatic discharge (ESD) or electrochemical processes. In order to understand these phenomena, we have studied triboelectrification between tapes and different tape head materials used in magnetic tape storage drives. The triboelectrification phenomenon can be modeled as a Thevenin equivalent battery or current source whose magnitude is highly dependent not only on materials, but also on physical parameters such as tape speed, wrap angle, the direction of tape over asymmetric multi-material substrates, and the complete electrical circuit. In this report, we will discuss the different physical parameters that affect the tribocharging of tape by different tape and head materials. We also show that tribocharging can cause ESD damage.     

(CoFe)_(1-x)Ag_x颗粒巨磁电阻薄膜的磁折射效应研究

在线非接触测试巨磁电阻效应对磁电子器件的工业化生产具有重要的意义 .用红外光谱研究了 (CoFe) 1 -xAgx颗粒薄膜的磁折射效应 ,研究表明在红外波段 ,一级近似可以认为巨磁电阻比值与磁折射变化率成正比 ,可以利用磁折射效应作为在线非接触工具测量与自旋散射相关的巨磁电阻效应 .     

Instability of storage and temperature increment in nanopillars due to human body model electrostatic discharge

MRAM relevant to current induced magnetization switching (CIMS) is studied due to thermal increment caused by CIMS. In this paper, the instability of storage and the thermal increment caused by the transient current from the HBM ESD in nanopillars of MRAM are studied. We determine the voltage which can cause erroneous switching in MRAM by inducing CIMS. The finite element method is used to calculate the temperature increase caused by the discharge. Results indicate that this voltage is not sufficient to cause permanent physical or magnetic damage to MRAMs but only affects the reliability of the stored information.     

熔石英元件抛光表面的亚表面损伤研究

通过结合HF酸洗和微分干涉差显微成像对两组抛光元件的亚表面损伤进行直接观测和分析。结果显示微分干涉差显微成像相比于传统的明场成像具有更好的分辨率,可以更有效检测HF酸洗后暴露的各种浅塑性亚表面损伤。对两组抛光元件的亚表面损伤的对比分析发现熔石英元件在抛光中会产生大量的亚表面损伤,这些亚表面损伤绝大多数是浅塑性的划痕和坑,仅有少量的脆性断裂损伤,较大的抛光颗粒会产生更多更严重的亚表面损伤,并且这些亚表面损伤被表面沉积层所掩盖,表面粗糙度不能反映亚表面损伤的严重程度。     

Concentration dependence of giant magnetoresistance in magnetic granular composites

We combine effective medium theory (EMT) with the two-channel conducting model to study the magnetic granular concentration dependence of a giant magnetoresistance (GMR) in magnetic granular composites. The composite is composed of small magnetic granules (such as Co) embedded in an immiscible nonmagnetic metallic matrix (such as Ag). We present a model for the composite in which the magnetic metallic granules are spherical in shape and have a distribution in sizes, and in which there are different contributions of superparamagnetic and ferromagnetic granules to conductance. The calculated result about the concentration dependence of GMR is in agreement with the experimental data.     

Pressure-induced enhancement of giant magnetoresistance due to crossover of interlayer exchange coupling in Fe/Cr multilayers

We report the first observation of a large pressure-induced enhancement of giant magnetoresistance (GMR) in magnetic multilayers (MML). In Fe/Cr MMLs with the Cr layer thickness of approximately 30 A, a crossover from biquadratic to bilinear interlayer exchange coupling (IEC) was observed by applying pressure, and simultaneously the GMR under high pressure (>2 GPa) was enhanced to be twice as large as that at ambient pressure. The enhanced GMR is attributed to the suppression of the biquadratic IEC by applying pressure, and the electrical resistivity in parallel alignment of magnetization also showed a crossover behavior, suggesting an electronic origin for the observed pressure effects.     

Giant magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems

We theoretically investigate the giant magnetoresistance (GMR) effect in general magnetically modulated semiconductor nanosystems, which can be realized experimentally by depositing two parallel ferromagnetic strips on the top of a heterostructure. Here the exact magnetic profiles and arbitrary magnetization direction of ferromagnetic strips are emphasized. It is shown that a considerable GMR effect can be achieved in such nanosystems due to the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio is strongly influenced by the magnetization direction of ferromagnetic strips in nanosystems, thus possibly leading to tunable GMR devices.     

Micromagnetic simulations on detection of magnetic labelled biomolecules using MR sensors

In this work, we present a study of the interaction between the magnetic particles used in biological applications and the giant magnetoresistive effect (GMR) sensor. The fractional change in resistance, and hence the sensitivity, will be maximized by matching, as far as possible, the size of the sensor to the size of the beads and by carefully positioning the beads over the sensor. We found, by micromagnetic simulations, that the amount of the surface coverage with magnetic particles may affect the magnetization curve of the sensor and will change the field dependence of the GMR response.     

Isotopic dependence of the giant monopole resonance in the even-A 112-124Sn isotopes and the asymmetry term in nuclear incompressibility

The strength distributions of the giant monopole resonance (GMR) have been measured in the even-A Sn isotopes (A=112-124) with inelastic scattering of 400-MeV alpha particles in the angular range 0 degrees -8.5 degrees . We find that the experimentally observed GMR energies of the Sn isotopes are lower than the values predicted by theoretical calculations that reproduce the GMR energies in 208Pb and 90Zr very well. From the GMR data, a value of Ktau = -550 +/- 100 MeV is obtained for the asymmetry term in the nuclear incompressibility.     

Improved giant magnetoresistance in magnetic granular Co5 Cu95 alloys by direct-current joule heating

The dc joule heating technique has been used to produce giant magnetoresistance (GMR) Co₅Cu₉₅ granular alloys. At T=10 K, GMR as large as 28.5% has been observed in the as-quenched sample annealed with I=6A in a magnetic field up to 30 kOe. At room temperature, the joule-heated samples show higher GMR in comparison with that annealed by the conventional method.     

Co/Cu92Mn8/Co结构中的低场巨磁电阻研究

对三明治结构的Co/Cu/Co和Co/Cu₉₂Mn₈/Co系列的巨磁电阻效应进行了研究,发现两者的巨磁电阻均随中介层厚度作周期性振荡,但是接近反相.作为与Co/Cu/Co系统的比较,发现若在Cu基中稀释Mn原子,巨磁电阻随外磁场变化的曲线会有非常大的改变,同时饱和场或开关场也有较大的下降,这意味着有可能为Co/Cu金属多层膜的巨磁电阻的实用化研究开辟出一条新的思路. 关键词：     

Improved giant magnetoresistance in magnetic granular Co5 Cu95 alloys by direct-current joule heating

The dc joule heating technique has been used to produce giant magnetoresistance (GMR) Co₅Cu₉₅ granular alloys. At T=10 K, GMR as large as 28.5% has been observed in the as-quenched sample annealed with I=6A in a magnetic field up to 30 kOe. At room temperature, the joule-heated samples show higher GMR in comparison with that annealed by the conventional method.     

Asymptotic Entanglement Sudden Death in Two Atoms with Dipole–Dipole and Ising Interactions Coupled to a Radiation Field at Non-Zero Detuning

We investigate the time evolution and asymptotic behavior of a system of two two-level atoms (qubits) interacting off-resonance with a single mode radiation field. The two atoms are coupled to each other through dipole–dipole as well as Ising interactions. An exact analytic solution for the system dynamics that spans the entire phase space is provided. We focus on initial states that cause the system to evolve to entanglement sudden death (ESD) between the two atoms. We find that combining the Ising and dipole–dipole interactions is very powerful in controlling the entanglement dynamics and ESD compared with either one of them separately. Their effects on eliminating ESD may add up constructively or destructively depending on the type of Ising interaction (Ferromagnetic or anti-Ferromagnetic), the detuning parameter value, and the initial state of the system. The asymptotic behavior of the ESD is found to depend substantially on the initial state of the system, where ESD can be entirely eliminated by tuning the system parameters except in the case of an initial correlated Bell state. Interestingly, the entanglement, atomic population and quantum correlation between the two atoms and the field synchronize and reach asymptotically quasi-steady dynamic states. Each one of them ends up as a continuous irregular oscillation, where the collapse periods vanish, with a limited amplitude and an approximately constant mean value that depend on the initial state and the system parameters choice. This indicates an asymptotic continuous exchange of energy (and strong quantum correlation) between the atoms and the field takes place, accompanied by diminished ESD for these chosen setups of the system. This system can be realized in spin states of quantum dots or Rydberg atoms in optical cavities, and superconducting or hybrid qubits in linear resonators.     

Annealing effects and degradation mechanism of NiFe/Cu GMR multilayers

Structural, transport and magnetic properties of sputtered Ni₈₀Fe₂₀/Cu multilayers showing giant magnetoresistance (GMR) were studied using X-ray reflectometry and diffraction, transport measurements, ferromagnetic resonance (FMR), and magneto-optical Kerr effect. In particular, mechanisms of the GMR degradation at elevated temperatures were investigated. Multilayers with an individual layer thickness of 2 nm show a sharp drop of the GMR after annealing at about 250°C. Whereas below this temperature grain growth and defect reduction contribute to a partial improvement of the GMR, above ∼250°C interdiffusion between Ni and Cu appears to lead to layer intermixing and to the degradation of transport and magnetic properties. Moreover, the initial 〈1 1 1〉 texture sharpens, and strong tensile stresses arise in the layer stack. We correlated the structural alterations to changes in the magnetic properties such as the strength of the antiferromagnetic coupling (bilinear and biquadratic) and the magnetic anisotropy. Above 250°C an increasing magnetic inhomogeneity of the Permalloy layers can be inferred from the FMR linewidth broadening.     

Quantum Theory for Interfacial Roughness and Angle Dependence of Giant Magnetoresistance in Magnetic Multilayers

The giant magnetoresistance(GMR)in magnetic multilayers with current in the plane of the layers is studied by using the quantum-statistical Green‘s function approach,in which the effects of the interfacial roughness and magnetization configuration on the GMR are included,It is shown that the maximal GMR first increses and then decreases with increasing interfacial roughness,exhibiting a peak at an optimum value of interfacial roughness.An approximately linear dependence of GMR on sin^2(θ/2)is obtained,where θ is the angle between magnetizations of the two successive ferromagnetic layers,FUrthermore,the maximal GMR is found to increase with increasing the number of bilayers.     

不同过渡层上Co/Cu/Co三明治结构的巨磁电阻效应研究

通过对不同过渡层上Co(5.5nm)/Cu(3.5nm)/Co(5.5nm)三明治结构的研究,发现过渡层的磁性及过渡层诱导的三明治晶格结构对材料的巨磁电阻效应有重要影响.反铁磁Cr过渡层由于和相邻铁磁Co层之间存在着反铁磁耦合,可以获得6％以上的巨磁电阻值,但它同时使材料的矫顽力较大,因此磁灵敏度不高.Ni和Ti过渡层上Co/Cu/Co三明治结构,由于形成了强的（111）织构,其巨磁电阻值也达到5％以上.磁性材料Ni过度层还使三明治结构材料的矫顽力大为下降,从而显著提高了材料的磁灵敏度. 关键词：     

Application of magnetically modulated microwave absorption to study of giant magnetoresistance effect in the Ni−Fe/Cu multilayer system

Magnetically modulated microwave absorption (MMMA), magnetic hysteresisM(H), giant magnetoresistance (GMR) and ferromagnetic resonance (FMR) have been examined in the antiferro-magnetically coupled Py/Cu (Py=Ni₈₃Fe₁₇, permalloy) multilayer system. The correlation between results obtained by the MMMA technique, the standard GMR measurements, and magnetization reversal studies is shown. Microwave studies of GMR, magnetization reversal, and FMR for different orientations of the magnetic field with respect to the sample surface are presented.     

金属颗粒薄膜巨磁电阻效应的影响因素

研究金属颗粒薄膜的颗粒尺寸、磁性组分等对巨磁电阻效应的影响.在自由电子模型和自旋相关散射理论的基础上，计算了金属颗粒膜体系的电子平均散射势.在计算过程中将自旋相关项与宏观量相联系，得到了巨磁电阻效应与磁性成分比例、颗粒尺寸的关系.磁电阻效应的模拟曲线表明，增加磁性成分比例和减小磁性颗粒尺寸可增强颗粒膜的巨磁电阻效应. 关键词：