Development of a new atmospheric pressure cold plasma jet generator and application in sterilization

This paper reports that a new plasma generator at atmospheric pressure, which is composed of two homocentric cylindrical all-metal tubes, successfully generates a cold plasma jet. The inside tube electrode is connected to ground, the outside tube electrode is connected to a high-voltage power supply, and a dielectric layer is covered on the outside tube electrode. When the reactor is operated by low-frequency (6 kHz--20 kHz) AC supply in atmospheric pressure and argon is steadily fed as a discharge gas through inside tube electrode, a cold plasma jet is blown out into air and the plasma gas temperature is only 25--30℃. The electric character of the discharge is studied by using digital real-time oscilloscope (TDS 200-Series), and the discharge is capacitive. Preliminary results are presented on the decontamination of E.colis bacteria and Bacillus subtilis bacteria by this plasma jet, and an optical emission analysis of the plasma jet is presented in this paper. The ozone concentration generated by the plasma jet is 1.0×10¹⁶cm^-3 which is acquired by using the ultraviolet absorption spectroscopy.     

LBNL14GHz离子源AECR-U的最新进展

A radial sputter probe has been developed for the AECR-U as an additional method of producing metal ion beams.Negative voltage is applied to the probe to incite collisions with target atoms,thereby sputtering material into the plasma.The sputter probe is positioned through one of the 6 radial access slots between the permanent hexapole structure of the AECR-U.The probe position can be varied with respect to the inner edge of the hexapole magnet structure.Charge state distributions and peak beam intensities at bias voltages up to-5kV were obtained for gold samples at varying distances of the probe with respect to the plasma.For high charge states production the radial position with respect to the plasma was more sensitive than for the medium and lower charge states.For high charge state ion production the probe was optimized at a distance of 0.6cm inside the chamber wall(4.1cm from the center of the chamber).Stable beams with peak intensities of up to 28eμA of Au~(24 ) and 1.42eμA of Au~(41 ) have been produced using the sputter probe technique. In addition,a solid state circuit under development by Scientific Solutions,Inc which provides a bandwidth up to 100MHz was used to drive the 14GHz klystron amplifier for the LBNL AECR-U ion source.Various broadband and discrete heating modes were tested and the results for high charge state ion production were compared with single frequency heating.     

Influence of a centered dielectric tube on inductively coupled plasma source: Chamber structures and plasma characteristics

A high-density RF ion source is an essential part of a neutral beam injector. In this study, the authors attempt to retrofit an original regular RF ion source reactor by inserting a thin dielectric tube through the symmetric axis of the discharge chamber. With the aid of this inner tube, the reactor is capable of generating a radial magnetic field instead of the original transverse magnetic field, which solves the E × B drift problem in the current RF ion source structure. To study the disturbance of the dielectric tube, a fluid model is introduced to study the plasma parameters with or without the internal dielectric tube, based on the inductively coupled plasma(ICP) reactor. The simulation results show that while introducing the internal dielectric tube into the ICP reactor, both the plasma density and plasma potential have minor influence during the discharge process, and there is good uniformity at the extraction region. The influence of the control parameters reveals that the plasma densities at the extraction region decrease first and subsequently slow down while enhancing the diffusion region.     

Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) magnetron sputtering at room temperature. The RF power is varied from 75 to 150W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power. The lowest resistivity achieved is 2.07×10^-3\Omegacm at an RF power of 100W with a Hall mobility of 16cm²V^-1s^-1 and a carrier concentration of 1.95×10²⁰cm^-3. The films obtained are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33eV for the films deposited at different RF powers.     

Experimental study on parameters of dust plasma in SiH4/C2H4/Ar discharges

Measurements of dust plasma parameters were carried out in the discharges of （SiH4/C2H4/Ar） mixtures. Dust particles were formed in the capacitively coupled radio-frequency discharge of these reactive mixtures in a cylindrical chamber. Langmuir probe was employed for diagnosing and measuring the important plasma parameters such as electron density and electron temperature. The results showed that the electron density dropped, and in contrast the electron temperature rose when the dust particles formed. The curves of the electron density and temperature versus the RF power and pressure were presented and analysed. Further, it was found that the wriations of electron temperature and the size of dust void with the RF power followed the similar trends. These trends might be useful for understanding more about the characteristics of dusty voids.     

Experimental results of helicon source

Helicon plasma sources are known as efficient generators of uniform and high density plasma. A helicon plasma source was developed for the investigation of plasma stripping and plasma lenses at the Institute of Modern Physics, CAS. In this paper, the characteristics of helicon plasma have been studied by using a Langmuir four-probe and a high plasma density up to 3.9× 10^13/cm^3 has been achieved with the Nagoya type III antenna. In the experiment, several important phenomena were found： （1） for a given magnetic induction intensity, the plasma density became greater with the increase of RF power; （2） helicon mode appeared at RF power between 300 W and 400 W; （3） the plasma density gradually tended to saturation as the RF power increased to the higher power; （4） a higher plasma density can be obtained by a good match between the RF power and the magnetic field distribution. The key issue is how to optimize the matching between the RF power and the magnetic field. Moreover, some tests on the extraction of ion beams were performed, and preliminary results are given. The problems which existed in the helicon ion source will be discussed and the increase in beam density will be expected by extraction system optimum.     

Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance--voltage measurement. Using capacitance--frequency measurement, it finds one type of trap in conventional DHEMTs with τ_T=(0.5-6) ms and D_T= (1 - 5) × 10¹³ cm^-2·eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with τ_T(f)=(0.2-2) μs and slow with τ_T(s)=(0.5-6) ms. The density of trap states evaluated on the EHEMTs is D_T(f)=(1 - 3) × 10¹² cm^-2·eV^-1 and D_T(s)=(2 - 6) × 10¹² cm^-2·eV^-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.     

Review of relaxation oscillations in plasma processing discharges

Relaxation oscillations due to plasma instabilities at frequencies ranging from a few Hz to tens of kHz have been observed in various types of plasma processing discharges. Relaxation oscillations have been observed in electropositive capacitive discharges between a powered anode and a metallic chamber whose periphery is grounded through a slot with dielectric spacers. The oscillations of time-varying optical emission from the main discharge chamber show, for example, a high-frequency (\sim 40~kHz) relaxation oscillation at 13.33Pa, with an absorbed power being nearly the peripheral breakdown power, and a low-frequency ( \sim 3 Hz) oscillation, with an even higher absorbed power. The high-frequency oscillation is found to ignite plasma in the slot, but usually not in the peripheral chamber. The kilohertz oscillations are modelled using an electromagnetic model of the slot impedance, coupled to a circuit analysis of the system including the matching network. The model results are in general agreement with the experimental observations, and indicate a variety of behaviours dependent on the matching conditions. In low-pressure inductive discharges, oscillations appear in the transition between low-density capacitively driven and high-density inductively driven discharges when attaching gases such as SF₆ and Ar/SF₆ mixtures are used. Oscillations of charged particles, plasma potential, and light, at frequencies ranging from a few Hz to tens of kHz, are seen for gas pressures between 0.133 Pa and 13.33 Pa and discharge powers in a range of 75--1200 W. The region of instability increases as the plasma becomes more electronegative, and the frequency of plasma oscillation increases as the power, pressure, and gas flow rate increase. A volume-averaged (global) model of the kilohertz instability has been developed; the results obtained from the model agree well with the experimental observations.     

Electrical and structural properties of diamond films implanted by various doses of oxygen ions

Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investigated. Hall effect measurements show that lower dose oxygen ion implantation is beneficial to preparing n-type diamonds. The carrier concentration increases with the dose increasing, indicating that oxygen ions supply electrons to the diamonds. The results of AES spectrum indicate that oxygen ions are doped into the diamond films, and the O-implanted depth is around 0.1μm. Raman spectrum measurements indicate that the lower dose oxygen ion implantation at 10¹⁴cm^-2 or 10¹⁵cm^-2 is favourable for producing less damaged O-doped diamond films.     

Phase transition and pitting corrosion behaviour for Mo—implanted aluminium

Molybdenum ions are implanted into aluminium with high ion flux and high dose at elevated temperatures of 200℃, 400℃ and 500℃. Due to the high temperature and high flux of vacancies and interstitial atoms, the atom diffusion and chemical effects are enhanced during the ion implantation. The effects increase with increasing ion flux and dose, so that new phase formation and phase transition emerge noticeably. X-ray diffraction analysis shows that when the aluminium is implanted with Mo ions at a low ion flux (25μA/cm²), the Al₅Mo alloy is formed. The atomic ratio of Mo/Al of the Al₅Mo phase is close to 20%. When the aluminium is implanted with Mo ions at a high ion flux (50μA/cm²), the phase transition from Al₅Mo to Al₁₂Mo appears, and the latter is dominant, which is determined to be the final phase. The ratio of Mo/Al in Al₁₂Mo is 7.7%. Rutherford backscattering spectroscopy indicates also that the Mo/Al atom ratio is ～7% to ～8% in Mo-implanted aluminium. The atomic ratios of the constituents in Al₅Mo and Al₁₂Mo are of stoichiometric composition for these alloys. The thicknesses of the Al₁₂Mo alloy layers for Mo-implanted Al with ion doses of 3×10¹⁷/cm² and 1×10¹⁸/cm² are 550nm and 2000nm, respectively. The pitting corrosion potential V_p increases obviously. It is clear that due to the formation of Al₁₂Mo alloy layer, the pitting corrosion resistance is enhanced.     

Guided-Wave Two-Dimensional Acousto-Optic Scanner Using Proton-Exchanged Lithium Niobate Waveguide

Two-dimensional scanning of a 0.6328 mum guided-light beam has been realized using noncolinear acousto-optic (AO) coplanar Bragg diffraction together with colinear AO guided-mode to substrate radiation-mode conversion in a Z-cut Xpropagation LiNbO3 proton-exchanged (PE) waveguide. The two surface acoustic (SAW) waves utilized are at the center frequencies of 500 and 200 MHz, propagating in the Y and X axes, respectively. Two-dimensional scanning of approximately 720 resolvable light beam spots, namely, 18 40 (horizontal vertical) scanning, has been demonstrated using a light beam of 1.0 mm aperture. The total number of resolvable beam spots can be greatly increased from 720 by simply utilizing SAW transducers of larger bandwidth and a light beam of greater aperture. It should also be possible to significantly increase the diffraction efficiency from 3 % by optimizing the parameters of the PE waveguide and the SAWs.     

Hybrid Wavelength and Code Division Multiple Access in Optical Networks

A review of schemes for multiple access in fiber optic networks shows that a hybrid of wavelength and code division multiple access (WCDMA) combines the best features of both. In particular, the hybrid scheme retains the large information carrying capacity of wavelength division multiple access (WDMA) and flexibility of code division multiple access (CDMA). In this paper WDMA, optical CDMA (OCDMA), and WCDMA networks are discussed. In OCDMA networks, concept of incoherent and coherent coding including inverse decoding and matched filter is introduced. The delay performance of both WDMA and WCDMA networks, under the simple suboptimum access protocols based on cyclic search, is computed. It has been shown quantitatively that tuning delay significantly affects the delay performance of both WDMA and WCDMA networks. Futhermore, delay performance of WCDMA networks is always better than the WDMA networks for the same tuning delay, load, and number of users.     

Effect ofγ-radiation on the spectral luminescence characteristics of impure cadmium tungstate crystals

Results of a study of the effect of γ-radiation on the spectral luminescence properties of cadmium tungstate crystals doped with silver, bismuth, and molybdenum cations are presented. Spectral characteristics of the nondnnnoped crystals are briefly described. Absorption and photo and X-ray luminescence spectra of the crystals taken before and after exposure to γ-radiation (5.5·10⁴ Gy) are compared. It is found that the spectral characteristics of the crystals doped with silver, bismuth, and molybdenum cations do not change markedly after the exposure. The relation between the type of impurity-induced defects, individual characteristics of the impurity cations, and the character of the effect of γ-radiation on the spectral luminescence properties of impure crystals is analyzed (preliminarily). Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 55–60, January–February, 1997.     

Femtosecond Transform-Limited Pulse Generation by Compensating for the Linear Chirp of SPM Spectra in Dispersion Shifted Fibers

A simple technique of pulse compression, based on the linear chirp compensation of self-phase modulation (SPM) spectra in dispersion shifted fibers, is demonstrated. The optimization procedure is carried out, for a short span of a single-mode fiber, using a parabolic law, which describes the behavior of the squared output pulse width versus the pump peak power in the case of Gaussian pulses. The experimental results give a minimum pulse duration of 233 fs, which is in good agreement with the model. Shorter and coherent pulses, down to 90 fs, have been obtained by inserting an interference filter at the optical output.     

Sorting of bending magnets for the SSRF booster

The Shanghai Synchrotron Radiation Facility(SSRF)booster ring,a full energy injector for the storage ring,is deigned to accelerate the electron beam energy from 150MeV to 3.5GeV that demands high extraction efficiency at the extraction energy with low beam loss rate when electrons are ramping.Closed orbit distortion(COD)caused by bending magnet field uniformity errors which affects the machine performance harmfully could be effectively reduced by bending magnet location sorting.Considering the affections of random errors in measurement,both ideal sorting and realistic sorting are studied based on measured bending magnet field uniformity errors and one reasonable combination of bending magnets which can reduce the horizontal COD by a factor of 5is given as the final installation sequence of the booster bending magnets in this paper.     

Measurement of nonlinear coefficient of optical fiber based on small chirped soliton transmission

We measure the waveform and phase curves of short optical pulses before and after transmission over different lengths of fibers by use of the pulse analyzer with the frequency-resolved optical gating (FROG),and numerically simulate pulse evolution under the experimental conditions.The nonlinear coefficient of the fiber is given by comparing the experimental results with the numerical ones.Difference between the experiment and numerical simulation is analyzed.     

Resonance scattering of canonical elastic shells in absorbing fluid medium

Resonance scattering of elastic spherical shell and cylindrical shell while the surrounding fluid medium has absorption is studied. The normal mode solution derived using exact elastic theory and the separation of variables is still applicable. However, the scattering form function has to be modified for the absorbing medium, otherwise the unreasonable result would be obtained. The backscattering form function in the absorbing medium is redefined, and the form function of elastic spherical and cylindrical shell with vacuum or solid matter filled is calculated in various absorption conditions. The results show that the absorption of surrounding fluid leads to notable attenuation of the coincidence resonances in the mid-frequency, but it has a little influence on the low-frequency resonance scattering induced by the filler inside the shell.     

Single-beam self-referenced phase-sensitive surface plasmon resonance sensor with high detection resolution

A versatile and low-cost single-beam self-referenced phase-sensitive surface plasmon resonance(SPR)sensing system with ultra-high resolution performance is presented.The system exhibits a root-mean-square phase fluctuation of ±0.0028.over a period of 45 min.i.e.a resolution of±5.2×10-9 refractive index units.The enhanced performance has been achieved through the incorporation of three design elements:a true single-beam configuration enabling complete self-referencing so that only the phase change associated with SPR gets detected,a differential measurement scheme to eliminate spurious signals not related to the sensor response,and the elimination of retardation drifts by incorporating temperature stabilization in the liquid crystal phase modulato .Our design should bring the detection sensitivity of non-labeling SPR biosensing closer to that achievable by conventional fluorescence-based techniques.     

Influences of SiO2 protective layers and annealing on the laser-induced damage threshold of Ta2O5 films

Ta2O5 films are prepared on BK7 substrates with conventional electron beam evaporation deposition.The effects of SiO2 protective layers and annealing on the laser-induced damage threshold (LIDT) of the films are investigated.The results show that SiO2 protective layers exert little influence on the electric field intensity(EFI)distribution,microstructure and microdefect density but increase the absorption slightly.Annealing iS effective on decreasing the microdefect density and the absorption of the films.Both SiO2 protective layers and annealing are beneficial to the damage resistance of the films and the latter is more effective to improve the LIDT.Moreover,the maximal LIDT of Ta2O5 films is achieved by the combination of SiO2 protective layers and annealing.