Emission measurement and safety assessment for the production process of silicon nanoparticles in a pilot-scale facility

Emission into the workplace was measured for the production process of silicon nanoparticles in a pilot-scale facility at the Institute of Energy and Environmental Technology e.V. (IUTA). The silicon nanoparticles were produced in a hot-wall reactor and consisted of primary particles around 60 nm in diameter. We employed real-time aerosol instruments to measure particle number and lung-deposited surface area concentrations and size distribution; airborne particles were also collected for off-line electron microscopic analysis. Emission of silicon nanoparticles was not detected during the processes of synthesis, collection, and bagging. This was attributed to the completely closed production system and other safety measures against particle release which will be discussed briefly. Emission of silicon nanoparticles significantly above the detection limit was only observed during the cleaning process when the production system was open and manually cleaned. The majority of the detected particles was in the size range of 100–400 nm and were silicon nanoparticle agglomerates first deposited in the tubing then re-suspended during the cleaning process. Appropriate personal protection equipment is recommended for safety protection of the workers during cleaning.     

Flexible integration of optical switch with optical power splitting and attenuating functions for optical fiber-based networking applications

A flexible integration of optical switch with optical power splitting and attenuating functions has been proposed to optimally serve optical fiber-based networking applications. In this switch, an etched binary-slope sidewall reflector is electrostatically actuated in and out of the plane to manipulate optical signals between input and output optical fibers. The fabrication process is a simple combination of a bulk-silicon micromachining process and silicon-to-glass anodic bonding where fiber alignment grooves, reflectors and actuators are fabricated on the same silicon substrate. Ball-lensed fibers are assembled with the device to achieve high coupling efficiency. Performances of the fabricated devices are measured and discussed. The switching time is less than 9 ms at 31 V. The excess loss of the device is less than 3 dB and the controllable attenuation range is up to 38 dB at 139 V, respectively. Moreover, polarization-dependent loss is less than 0.7 dB in the whole attenuation and splitting range.     

ZnO nanorods with different morphologies and their field emission properties

ZnO nanorods with different morphologies were grown by changing the temperature of the process using the thermal vapor deposition method without a catalyst. The X-ray diffraction pattern of these nanorods showed a single-crystalline wurtzite structure and a c-axis orientation. The turn-on fields of the pencil-like and normal ZnO nanorods were 1.7 V/μm and 2.2 V/μm at a current density of 0.1 μA/cm², and the emission current density from the ZnO nanorods reached 1 mA/cm² at bias fields of 5.1 V/μm and 7.5 V/μm, respectively. The results indicated that ZnO nanorods could give sufficient brightness as a field emitter in a flat panel display.     

High efficiency on-chip charge pump DC–DC converter for LCD drivers

An on-chip charge pump (CP) DC–DC converter applicable to potable displays is described. A merged 2×/3× booster eligible for both single-phase pumping and dual-phase pumping is developed. A closed-loop sensing scheme with analog/digital mixed-mode voltage regulation helps to ensure a low ripple output voltage and high power transfer efficiency. A test vehicle was implemented for a DC input range of 2.2–3.6 V and the DC output of 5 V with a load condition of 20 mA in a standard 0.35-μm 2poly-4metal CMOS process. The test results reveal output ripple of less than 80 mV and efficiency of 77.4% in the 2× dual phase mode.     

Low capacitance ESD protection circuits for GaAs RF ICs

We present a novel electrostatic discharge (ESD) protection circuit for GaAs radio frequency (RF) integrated circuits (ICs), which are targeted for 10 Gb/s fiber-optic communication applications. The robustness, parasitic impedance, and loading effect of the new ESD protection circuit are studied and compared with the conventional diode-based ESD protection technique. Two versions of this type of ESD protection circuit were fabricated with a 60-GHz InGaP heterojunction bipolar transistor (HBT) technology. These two circuits can withstand, respectively, 2700 and 5000 V human body model (HBM) ESD stress and provide a similar level of ESD protection to RF ICs. The corresponding impedances of the off state are represented by an equivalent shunt capacitance and shunt resistance of 0.22 pF and 500 Ω, and 0.5 pF and 250 Ω, at 10 GHz. This ESD protection circuit can protect the 10 Gb/s RF ICs against much higher level ESD stress than conventional diode-based ESD protection circuits even with smaller size.     

Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing

Metal-induced crystallization method is one of the favorable non-laser crystallization methods for thin-film transistors in large-area displays. However, it is necessary to reduce metal contamination in the film to lower leakage current for the device applications. A new two-step crystallization method, consisting of a nucleation step by AlCl₃ vapor-induced crystallization and a grain growth step by a pulsed rapid thermal annealing, has been proposed to increase the grain size and reduce the residual metal contamination in crystallized poly-Si films. The grain size of the poly-Si film crystallized by the VIC + PRTA two-step crystallization process was as large as 70 μm. Furthermore, the Al concentration in the poly-Si film was reduced by two orders of magnitude from 1 × 10²⁰ cm^?3 by VIC only process to 1.4 × 10¹⁸ cm^?3 by the two-step process. As a result, the minimum leakage current of poly-Si TFTs using the poly-Si film prepared by the two-step process was reduced from 1.9 × 10^?10 A/μm to 2.8 × 10^?11 A/μm at a drain voltage of 5 V, without carrier mobility degradation.     

Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires

Field emission studies of WO_2.72 nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler–Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×10⁶ μA/cm² can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO_2.72 nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications.     

Fabrication of solution-processed SnO2–Based flexible ReRAM using laser-induced graphene transferred onto PDMS

In this paper, we are reporting the fabrication of a solution-processed SnO₂-based flexible ReRAM using laser-induced graphene (LIG) transferred onto polydimethylsiloxane (PDMS). The fabricated ReRAM showed forming-free and self-compliance bipolar resistive switching characteristics when the applied voltage was swept from 0 V to 4.5 V for SET and from 0 V to - 4.5 V for RESET. The device operates as a filamentary type ReRAM and its conduction mechanism analysis indicates that the space charge limited conduction (SCLC) is dominant mechanism in the analog resistive switching of the fabricated device. For the reliability analysis, 100 cycles of endurance test and 1.8 × 10³ s of retention test were performed. The flexibility of the fabricated ReRAM device was demonstrated by showing that the resistive switching characteristics were still obtained after bending 200 times repeatedly down to 1 mm radius. Our study suggests the new fabrication process of a solution-processed flexible ReRAM and proves its potential applications to flexible electronics.     

Structural and electrochemical properties of layered lithium nitridocuprates Li3 − xCuxN

We report a systematic study of the layered lithium nitridocuprates Li_3 ? xCu_xN with 0.1 ≤ x ≤ 0.39. The structural data obtained from experimental XRD patterns, Rietveld refinements and unit cell parameters calculation vs x, indicate that copper (I) substitute interlayer lithium ions in the parent nitride Li₃N to form the Li_3 ? xCu_xN compound without any Li vacancy in the Li₂N^? layer. Electrochemical results report Li insertion into the corresponding layered structures cannot take place in the 1.2/0.02 V voltage range as in the case of lithium into nitridonickelates and nitridocobaltates. However, in the initial charge process of Li_3 ? xCu_xN at 1.4 V leading to a specific capacity higher than 1000 mA h/g, the oxidation of copper and nitride ions is probably involved inducing a strong structural disordering process. As a consequence a new rechargeable electrochemical system characterized by discharge–charge potential of ≈ 0.3 V/1.2 V appears from the second cycle. Cycling experiments 0.02 V voltage/0.02 V range induce a complete destruction of the layered host lattice and the presence of Cu₃N in the charge state suggests a conversion reaction. The capacity recovered in the 1.4/0.02 V range practically stabilizes around 500 mA h/g after 20 cycles.     

Curing temperature- and concentration-dependent dielectric properties of cross-linked poly-4-vinylphenol (PVP)

In this paper, dielectric properties of various thick PVP films cured at temperatures between 125° C and 200 °C are investigated. The thicknesses of PVP films are adjusted by varying their concentration in PGMEA solvent from 10 wt% to 2.5 wt%. Through FT-IR, C–V, SEM, and AFM analyses, the optimum curing process temperatures (150 °C for 10 wt% and 7.5 wt% samples, and 175 °C for 5 wt% samples) where PET substrates can be thermally endured are proposed in terms of their low hysteresis voltage in the C–V curve (1–2 V in 10 wt% samples, below 1 V in 7.5 wt% samples, and 0.5 V in 5 wt% samples).     

Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO₂ insulating layer is presented. Very low dark current of 2.24 × 10⁻¹¹ A and increased photo to dark current contrast ratio was achieved at 10 V. It was found that the dark current was drastically reduced by seven orders of magnitude at 10 V compared to samples without HfO₂ insulating layer. The observed decrease in dark current is attributed to the large barrier height which is due to introduction of HfO₂ insulating layer and the calculated barrier height was obtained as 0.95 eV. The peak responsivity of HfO₂ inserted device was 0.44 mA/W at bias voltage of 15 V.     

Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 GHz) in a 0.18 μm CMOS process

ESD protection for radio frequency (RF) applications must deal with good ESD performance, minimum capacitance, zero series resistance and good capacitance linearity. In order to fulfill these requirements, different ESD protection strategies for RF applications have been investigated in a 0.18 μm CMOS process. This paper compares different ESD protection devices and shows that a suitable ESD performance target for RF applications (200 fF max, 2 kV HBM) can be reached with a diode network scheme. The optimization of the diodes is then a key point which is detailed. A trade-off has to be found between the ESD performance, the voltage drop during ESD and the parasitic capacitance. Poly as well as shallow trench isolation (STI) bounded diodes have been studied and it appears clearly that a solution based on poly bounded diodes is the best choice.     

Synthesis of vanadium-doped palladium nanoparticles for hydrogen storage materials

Palladium–vanadium (Pd/V) alloy nanoparticles stabilized with n-pentyl isocyanide were prepared as new hydrogen storage materials by a facile polyol-based synthetic route with tetraethylene glycol and NaOH at 250 °C. The size distribution of the nanoparticles thus obtained featured two peaks at 4.0 ± 1.1 and 1.4 ± 0.3 nm in diameter, which were the mixture of Pd/V alloy and Pd nanoparticles. The ratio between the number of Pd/V and that of Pd nanoparticles was 51:49, and the Pd:V ratio of the overall product was 9:1 in wt%, indicating that the 4.0 nm Pd/V nanoparticles were composed of 81% Pd and 19% V. The inclusion of vanadium caused the increase in the d-spacing and thus expansion of lattice constant. A rapid increase in hydrogen content at low H₂ pressures was observed for the Pd/V nanoparticles, and a 0.47 wt% H₂ adsorption capacity was achieved under a H₂ pressure of 10 MPa at 303 K. Hydrogen storage performances of Pd/V alloy nanoparticles was superior compared with Pd nanoparticles.     

Assessment of the beneficial combination of electrochemical and ultrasonic activation of compounds originating from biomass

The electro-oxidation of organic molecules at the anode with simultaneous generation of hydrogen at the cathode in electrosynthesis reactors is considered as a promising and efficient process for the co-production of hydrogen and bio-sourced value-added chemicals. In this study and for the first time, we investigated the electro-oxidation of glucose and methylglucoside in 0.1 mol L⁻¹ NaOH on polycrystalline Pt (real surface area = 14.5 ± 0.5 cm², roughness ≈ 5) in the potential range [0; +1.20 V vs. rhe] under silent and ultrasonic (bath, 45 kHz, P_acous = 11.20 W) conditions. A series of linear sweep voltammograms, chronoamperograms and high-performance liquid chronoamperograms were generated. It was found that higher current densities were obtained under ultrasonic conditions over the potential range of +0.25 V to +1.10 V vs. rhe, indicating that higher oxidation rates were provided under ultrasonication. It was observed that the desorption of species from the Pt surface in the medium potential region was favoured, allowing free catalytic Pt sites for further adsorption and oxidation of reactants; and in the high potential region, high peak current densities in the presence of ultrasound was due to enhanced mass transport of the electroactive species from the bulk electrolyte to the Pt-polycrystalline electrode surface. HPLC studies confirmed that higher electrochemical activity was obtained in the presence of ultrasound than in the absence. In our conditions, it was also found that low frequency ultrasound did not change the selectivity of the glucose and methylglucoside electro-oxidation reactions but instead, a significant increase in the rate of conversion was observed.     

A MEMS micromirror driven by electrostatic force

A microelectromechanical systems (MEMS) micromirror is demonstrated in this paper. The micromirror is actuated by an electrostatic force and can achieve a large out of plane stroke by eliminating the electrostatic pull-in effect. The micromirror consists of a mirror of 400 μm by 400 μm in the center, a spring and three fixed bottom electrodes each side. Design principles and the analytical model are both developed, and they are verified by finite element analysis (FEA). The resonant frequency for the piston movement of the designed micromirror is about 2.5 kHz by FEA simulation. The micromirror prototype has been fabricated by a surface micromachining process and it is successfully tested using a microsystem analyzer. An out of plane stroke of 1.65 μm is observed at 100 V and it agrees well with the predicted result from analytical model.     

Synthesis and characterization of PPV-based light-emitting copolymer with alkylsilylphenyloxy pendant group for light-emitting diode applications

A novel light-emitting copolymer with high brightness and luminance efficiency was synthesized using the Gilch polymerization method, and its electro-optical properties were investigated. A polymer light-emitting diode (PLED) was fabricated in ITO/PEDOT/light-emitting copolymer/Ca/Al configuration. The turn-on voltage of the PLED was about 5.0 V with maximum brightness and luminance efficiency up to 1420 cd/m² at 16.2 V and 0.5 cd/A at 6.8 V, respectively.     

High-density uniformly aligned silicon nanotip arrays and their enhanced field emission characteristics

High-density (∼10⁸/cm²), uniformly aligned silicon nanotip arrays are synthesized by a plasma-assisted hot-filament chemical vapor deposition process using mixed gases composed of hydrogen, nitrogen and methane. The silicon nanotips grow along 〈112〉, and are coated in situ with a ∼3 nm thick amorphous carbon film by increasing the methane concentration in the source gases. In comparison to the uncoated silicon nanotips arrays, the coated tips have enhanced field emission properties with a turn-on field of 1.6 V/μm (for 10 μA/cm²) and threshold field of 3 V/μm (for 10 mA/cm²), suggesting their potential applications for flat panel displays.     

Potential-modulated electrochemiluminescence of a tris(2,2′-bipyridine)ruthenium(II) / lidocaine system under 430 kHz ultrasound irradiation

The electrochemiluminescence (ECL) of tris(2,2′-bipyridine)ruthenium(II) (Ru(bpy)₃²⁺) in the presence of lidocaine was investigated under ultrasound (US) irradiation. The sonoelectrochemical experiments are conducted by indirect irradiation of ultrasound with a piezoelectric transducer operating at 430 kHz. In a supporting electrolyte at pH 11, the Ru(bpy)₃²⁺/lidocaine system gave weak ECL peaks around +1.2 V and +1.45 V, respectively. The ECL signal at +1.2 V was attributed to redox reactions of the oxidative intermediates of Ru(bpy)₃²⁺ and lidocaine, while the signal at +1.45 V was assumed to be caused by an advanced oxidation process due to the generation of hydroxyl radicals (OH) at the electrode surface. In this study, the potential modulation approach is employed in the study of ECL process upon US irradiations because it can suppress the noise components from sonoluminescence effectly and improve the resolution of ECL-potential profiles. It is found ECL signals were greatly enhanced upon US irradiation at the output power of 30 W, however, the relative intensity of ECL signal at +1.2 V was larger than that obtained with a rotating disk electrode even though the mass transport effect is equilvalent. The experiment results suggest that the chemical effect (i.e., generation of OH) by 430 kHz US becomes remarkable in the electrochemical process. Detailed ECL reaction routes under US are proposed in this study.     

Synthesis of V O2(A) nanobelts by the transformation of V O2(B) under the hydrothermal treatment and its optical switching properties

V O₂(A) nanobelts had been successfully synthesized by the transformation of V O₂(B) using H₂O as the solvent under the hydrothermal approach at 280 °C for 48 h. Some parameters, such as the reaction temperature and time, had been briefly discussed to reveal the transition from V O₂(B) to V O₂(A). It was found that H₂O played a crucial role in the transition from V O₂(B) to V O₂(A). The phase transition of V O₂(A) nanobelts was at 162 °C. The optical switching properties of V O₂(A) were studied by the variable-temperature infrared spectra for the first time. In addition, V O₂(A) nanobelts were calcined at 700 °C for 2 h under a high purity Ar (99.999%) atmosphere to obtain V O₂(M) which exhibited a strong crystallographic transition at around 65 °C.     

Structure and electrical properties of HfO<Subscript>2</Subscript> high-<Emphasis Type="Italic">k</Emphasis> films prepared by pulsed laser deposition on Si (100)

High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N₂ atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10⁻⁸ A/cm² at the applied voltage of −1.5 V.