Effect of nitrogen partial pressure on Al–Ti–N films deposited by arc ion plating

AlTiN films with different nitrogen partial pressures were deposited using arc ion plating (AIP) technique. In this study, we systematically investigated the effect of the nitrogen partial pressure on composition, deposition efficiency, microstructure, macroparticles (MPs), hardness and adhesion strength of the AlTiN films. The results showed that with increasing the nitrogen partial pressure, the deposition rate exhibited a maximum at 1.2 Pa. Results of X-ray photoelectron spectroscopy (XPS) analysis revealed that AlTiN films were comprised of Ti–N and Al–N bonds. XRD results showed that the films exhibited a (1 1 1) preferred growth, and AlTi₃N and TiAl_x phases were observed in the film deposited at 1.7 Pa. Analysis of MPs statistics showed MPs decreased with the increase in the nitrogen partial pressure. In addition, the film deposited at 1.2 Pa possessed the maximum hardness of 38 GPa and the better adhesion strength.     

Structural and mechanical properties of Al–C–N films deposited at room temperature by plasma focus device

The Al–C–N films are deposited on Si substrates by using a dense plasma focus(DPF) device with aluminum fitted central electrode(anode) and by operating the device with CH_4/N_2 gas admixture ratio of 1:1. XRD results verify the crystalline Al N(111) and Al_3CON(110) phase formation of the films deposited using multiple shots. The elemental compositions as well as chemical states of the deposited Al–C–N films are studied using XPS analysis, which affirm Al–N, C–C, and C–N bonding. The FESEM analysis reveals that the deposited films are composed of nanoparticles and nanoparticle agglomerates. The size of the agglomerates increases at a higher number of focus deposition shots for multiple shot depositions. Nanoindentation results reveal the variation in mechanical properties(nanohardness and elastic modulus)of Al–C–N films deposited with multiple shots. The highest values of nanohardness and elastic modulus are found to be about 11 and 185 GPa, respectively, for the film deposited with 30 focus deposition shots. The mechanical properties of the films deposited using multiple shots are related to the Al content and C–N bonding.     

Influence of post-deposition annealing on the structural,optical and electrical properties of Li and Mg co-doped ZnO thin films deposited by sol–gel technique

Lithium (Li) and magnesium (Mg) co-doped zinc oxide (ZnO) thin films were deposited by sol–gel method using spin coating technique. The films were deposited on glass substrates and annealed at different temperatures. The effects of annealing temperature on the structural, optical and electrical properties of the deposited films were investigated using X-ray diffraction (XRD), Ultraviolet–Visible absorption spectra (UV–VIS), photoluminescence spectra (PL), X-ray photo electron spectroscopy (XPS) and Hall measurements. XRD patterns indicated that the deposited films had a polycrystalline hexagonal wurtzite structure with preferred (0 0 0 2) orientation. All films were found to exhibit a good transparency in the visible range. Analysis of the absorption edge revealed that the optical band gap energies of the films annealed at different temperatures varies between 3.49 eV and 3.69 eV. Room temperature PL spectra of the deposited films annealed at various temperatures consist of a near band edge emission and visible emission due to the electronic defects, which are related to deep level emissions, such as oxide antisite (O_Zn), interstitial zinc (Zn_i), interstitial oxygen (O_i) and zinc vacancy (V_Zn) which are generated during annealing process. The influence of annealing temperature on the chemical state of the dopants in the film was analysed by XPS spectra. Ion beam analysis (Rutherford back scattering) experiments were performed to evaluate the content of Li and Mg in the films. Hall measurements confirmed the p-type nature of the deposited films.     

Influence of post-deposition annealing on the structural and optical properties of ZnO thin films prepared by sol–gel and spin-coating method

Thin films of zinc oxide have been deposited onto (0001) sapphire substrate by sol–gel and spin-coating methods. The XRD pattern showed that the crystallinity of the annealed ZnO films had improved in comparison with that of the as-grown films. Photoluminescence spectra revealed a two-line structure, which is identified in terms of UV emission and defect-related emission. The emission intensity was found to be greatly dependent on heat treatment. Host phonons of ZnO and a shift of the _E2$E_2$ (high) peak from its position have been observed from Raman spectra. The surface morphologies of the film had been improved after annealing was observed from AFM images.     

Effect of annealing temperature on the microstructure and optical–electrical properties of Cu–Al–O thin films

We have successfully prepared Cu–Al–O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu–Al–O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO₂. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO₂ phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO₂ phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical–electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3–3.8 eV depending on the annealing temperature.     

Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness. Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.     

Rapid thermal annealing effects on the structural and optical properties of Na–N codoped ZnO films

Polycrystalline ZnO thin films codoped with Na and N were obtained by chemical bath deposition. The structural characteristic and the optical properties of the rapid thermal annealed ZnO:(Na,N) films were investigated by X-ray diffraction, scanning electron microscopy, energy dispersive spectrometer (EDS), Raman spectrum and room-temperature photoluminescence. After RTA treatment, the XRD spectra showed a continuous decrease of the full- width at half-maximum (FWHM) of the (0 0 2) diffraction peak of the ZnO:(Na,N) film. The Raman spectra revealed that the intensity of the mode around 582 cm⁻¹ increased with the increase of the RTA temperature. The PL spectra showed different trends in the UV luminescence of ZnO:(Na,N) films after RTA treatments.     

Influence of Co:Cu ratio on properties of Co–Cu films deposited at different conditions

A series of Co–Cu films with different Co:Cu ratio was electrodeposited at different electrolyte pH, deposition potential and film thickness, and their morphology, crystal structure and magnetic properties were investigated. Compositional analysis by energy dispersive x-ray spectroscopy disclosed that the Co and Cu content were 75 and 25 wt%, respectively, at high pH (3.2) level, while for films at low pH (2.5) level the compositions are 61 Co and 39 wt% Cu, and further decrease of Co:Cu ratio occurred as the film thicknesses increased. The surface morphology of the films changed from an initial dendritic stage to expanded dendrites with increasing Cu content by the electrolyte pH. The dendrites became more obvious at 3 μm and the dendritic structures increased with further increase of film thickness as the Co:Cu ratio decreased. Hence, the increase of the Cu content is thought to be the cause of the increase of dentritic structure. Structural characterizations by x-ray diffraction (XRD) showed that all films have face-centered cubic structure. In the XRD patterns, the peak intensity of Co (111) is lower for the films grown at low pH compared to that of high pH, and the (111) peaks of Co and Cu slightly separated at 3 μm and then the intensity of the Cu (111) increased with increasing film thickness from 4 to 5 μm, so that the Co:Cu ratio changed at all deposition parameters. Magnetic measurements displayed that the saturation magnetization decreased and the coercivity increased as the Co:Cu ratio decreased with all deposition parameters. Also, the magnetic easy axis was found to be in the film plane for all films. It was seen that the variations in the properties of the films might be attributed to the change of Co:Cu ratio caused by the deposition parameters.     

Synthesis and structures of Al–Ti nanoparticles by hydrogen plasma-metal reaction

Three kinds of Al–Ti nanoparticles (7.7, 27.8, and 42.6 at.% Ti) have been prepared from Al–65, Al–85, and Al–88 at.% Ti master alloys by hydrogen plasma-metal reaction, with average particle sizes of 30, 25, and 80 nm, respectively. The higher evaporation rate of Al than Ti resulted in the low Ti contents in the nanoparticles than those in the master alloys. Microscopy observation revealed that the primary nanoparticles are spherical in shape, and occur as chain aggregates of several individual nanoparticles due to the faster collision rate than the coalescence rate. All the Al–Ti nanoparticles contain amorphous alumina layers of about 2–3 nm in thickness surrounding the crystalline core. AlTi intermetallic nanoparticles were successfully produced for Al–27.8 at.% Ti, with a single crystal of AlTi in one chain aggregate. The composite nanoparticles of Al together with some Al₃Ti phases are prepared for Al–7.7 at.% Ti, with each phase in the individual particle of one chain aggregate. The composite nanoparticles of AlTi with some AlTi₃ were produced for Al–42.6 at.% Ti, with each phase in the individual particle of one chain aggregate. The formation mechanism of Al–Ti nanoparticles was interpreted in terms of phase transition and the effect of hydrogen.     

Effect of Sn and Al additions on the microstructure and mechanical properties of amorphous Ti–Cu–Zr–Ni alloys

Amorphous Ti–Cu–Zr–Ni alloys with minor addition of Sn and Al were prepared by melt spinning technique.The effects of Sn and Al additions on the microstructures and mechanical properties of glassy ribbons were investigated.The amorphous state of ribbons was confirmed by x-ray diffraction and transmission electron microscopy,where those ribbons with Sn addition exhibited a fully amorphous state.The characteristic temperature indicates that Ti_(45)Cu_(35)Zr_(10)Ni_5Sn_5 alloy has a stronger glass-forming ability,as proven by differential scanning calorimetry.Ti_(45)Cu_(35)Zr_(10)Ni_5Al_5 alloy showed a better hardness of 9.23 GPa and elastic modulus of 127.15 GPa and good wear resistance.Ti_(45)Cu_(35)Zr_(10)Ni_5Sn_5 alloy displayed a pop-in event related to discrete plasticity according to nanoindentation.When the temperature is below 560 K,Ti_(45)Cu_(35)Zr_(10)Ni_5Sn_5 alloy mainly exhibits elasticity.When the temperature rises between 717 K and 743 K,it shows a significant increase in elasticity but decrease in viscoelasticity after the ribbon experiences the main relaxation at 717 K.When the temperature is above 743 K,the ribbon shows viscoplasticity.     

The formation of V–Al–N thin films by reactive ion beam mixing of V/Al interfaces

The reactive ion beam mixing (IBM) of V/Al interfaces by low-energy N₂⁺ ions at room temperature leads to the formation of V–Al–N ternary nitride thin films. The kinetics, growth mechanisms, composition and electronic structure of those films have been studied using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Factor Analysis and Monte Carlo TRIDYN simulations. The comparison of experimental results with those obtained from TRIDYN simulations suggests that the chemical reaction with the nitrogen partial pressure and processes driven by residual defects are the rate-controlling mechanisms during the reactive IBM of V/Al interfaces. The kinetics of mixing is characterized by two stages. During the first stage (≤4×10¹⁶ ions/cm²), the formation of vanadium nitride is observed. In the second stage, vanadium nitride is transformed into a V–Al–N ternary nitride due to Al incorporation in the near surface region. Moreover, the V/Al ratio can be varied in a broad range, whereas the nitrogen concentration slightly decreases with increasing the aluminium content of the film.     

Influence of sputtering power and Ar–N2 flow on the structure and optical properties of indium nitride films prepared by magnetron sputtering

ABSTRACT

This paper discusses the deposition of indium nitride (InN) thin films on Si (100) substrates by using pulsed DC magnetron sputtering. Effects of varying sputtering power and Ar–N₂ flow ratio on the structural, morphological, and optical properties of indium nitride (InN) films were investigated. The structural characterization indicated nanocrystalline InN film with preferred orientation towards (101) plane that exhibited the optimum crystalline quality at 130?W and for 40:60 Ar–N₂ ratio. The surface morphology of InN, as observed through FESEM, contained irregularly shaped nanocrystals with size that increases with higher sputtering power and Ar:N₂ flow ratio. The optical properties of InN films were studied using ellipsometer at room temperature. The band gap of InN was decreased with the increase of sputtering power to 130?W, whereas an increase in the band gap was noticed with the increase of the Ar:N₂ flow ratio.     

Effect of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol–gel method

In this work, ZnO thin films were synthesized by sol–gel method on glass substrates followed by calcinations on different temperatures. The effect of annealing temperature on the structure and optical properties of the films was studied. The structural characteristics of the samples were analyzed by X-ray diffraction and atomic force microscope. The optical properties were studied by a UV-visible spectrophotometer. The results show that all the prepared ZnO thin films have a high preferential oriented c-axis orientation with compact hexagonal wurtzite structure. With the increasing annealing temperature (mse.ufl.edu), the intensity of (002) peak, particle size, surface RMS roughness, and absorbance of the ZnO thin films were increased as well. On the contrary, the transmittance and optical band gaps were decreased.     

Post‐deposition annealing and crystallisation of Y-Ba-Cu-O thin films deposited on polycrystalline substrates

Superconducting thin films of Y-Ba-Cu-O have been prepared by 50 Hz ac sputtering on polycrystalline SrTiO₃, yttria-stabilized-ZrO₂, and MgO substrates. Films deposited on different substrate materials are required to be annealed at different temperatures to induce superconductivity. The optimum annealing temperature for a film depends on the reaction between the film and its substrate material. It appears that a correlation exists between the process of crystallisation and substrate-film reaction.     

Influence of annealing on microstructure and magnetic-transport of FeCo–SiO2 nanogranular films

A series of FeCo–SiO₂ nanogranular films were prepared using magnetron controlled sputtering method. The microstructure, tunneling giant magnetoresistance (TMR) and magnetic properties of FeCo–SiO₂ films deposited at room temperature and then annealed at various temperatures were investigated using transmission electron microscopy (TEM), conventional four probes method and vibrated sample magnetometer (VSM) under room temperature, respectively. The results showed that all FeCo–SiO₂ films consisted of FeCo granules with equiaxial shape uniformly dispersed in the SiO₂ matrix and formed body-centered cubic (bcc) structure. With increasing the annealing temperature, FeCo granule size increased monotonically. For film with 30.5 vol% FeCo, the size distribution satisfied the log-normal function at lower annealing temperature. While with increasing annealing temperature, the size distribution deviated gradually from the log-normal function. Meanwhile, upon varying the annealing temperature, the TMR of films with lower volume fraction reached a peak value at higher annealing temperature and the TMR of films with higher volume fraction reached a peak value at lower annealing temperature. In addition, the results also indicated that the sensitivity of TMR changed non-monotonically with the increment of the annealing temperature and both the saturation magnetization and the susceptibility of FeCo (30.5 vol%)–SiO₂ films increased with increasing the annealing temperature.     

Temperature dependent structural and optical properties of nanocrystallineCdO thin films deposited by sol–gel process

Nanocrystallites of cadmium oxide (CdO) thin films were deposited by sol–gel dip coating technique on glass and Si substrates. XRD and TEM diffraction patterns confirmed the nanocrystalline cubic CdO phase formation. TEM micrograph of the film revealed the manifestation of nano CdO phase with average particle size lying in the range 1.6–9.3 nm. UV–Vis spectrophotometric measurement showed high transparency (nearly 75% in the wavelength range 500–800 nm) of the film with a direct allowed bandgap lying in the range 2.86–3.69 eV. Particle size has also been calculated from the shift of bandgap with that of bulk value for the films for which the particles sizes are comparable to Bohr exitonic radius. The particle size increases with the increase in annealing temperature and also the intensity of XRD peaks increases which implies that better crystallinity takes place at higher temperature.This revised version was published online in August 2005 with a corrected issue number.     

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the sam- ples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photolumines- cence spectra, and the origin of blue emission was investigated.     

Effect of irradiation and pre-ageing temperature on the mechanical properties of Al–Si alloy

Al–1wt.%Si alloy samples in the solid solution state were irradiated with doses of gamma rays up to 1.75 MGy for 2 h in the temperature range from 423 to 553 K. Induced variations in structure, mechanical and electrical properties were traced by suitable techniques. Observed changes in the measured parameters, internal friction Q ^?1, thermal diffusivity D _th, dynamic elastic modulus Y and resistivity, ρ, were explained in terms of the role and mode of interaction of lattice defects in irradiated and thermally treated samples. Composition inhomogeneity and variations in mass distribution in the matrix were also considered. The structure identification of the samples was carried out by using conventional X-ray diffraction techniques and transmission electron microscopy micrographs.