Electro-optic metal–insulator–semiconductor–insulator–metal Mach-Zehnder plasmonic modulator

The performance of a CMOS-compatible electro-optic Mach-Zehnder plasmonic modulator is investigated using electromagnetic and carrier transport simulations. Each arm of the Mach-Zehnder device comprises a metal–insulator–semiconductor–insulator–metal (MISIM) structure on a buried oxide substrate. Quantum mechanical effects at the oxide/semiconductor interfaces were considered in the calculation of electron density profiles across the structure, in order to determine the refractive index distribution and its dependence on applied bias. This information was used in finite element simulations of the electromagnetic modes within the MISIM structure in order to determine the Mach-Zehnder arm lengths required to achieve destructive interference and the corresponding propagation loss incurred by the device. Both inversion and accumulation mode devices were investigated, and the layer thicknesses and height were adjusted to optimise the device performance. A device loss of <8 dB is predicted for a MISIM structure with a 25 nm thick silicon layer, for which the device length is <3 μm, and <5 dB loss is predicted for the limiting case of a 5 nm thick silicon layer in a 1.2 μm long device: in both cases, the maximum operating voltage is 7.5 V.     

Plasmonic finite-thickness metal–semiconductor–metal waveguide as ultra-compact modulator

We propose a plasmonic waveguide with semiconductor gain material for optoelectronic integrated circuits. We analyze properties of a finite-thickness metal–semiconductor–metal (F-MSM) waveguide to be utilized as an ultra-compact and fast plasmonic modulator. The InP-based semiconductor core allows electrical control of signal propagation. By pumping the core we can vary the gain level and thus the transmittance of the whole system. The study of the device was made using both analytical approaches for planar two-dimensional case as well as numerical simulations for finite-width waveguides. We analyze the eigenmodes of the F-MSM waveguide, propagation constant, confinement factor, Purcell factor, absorption coefficient, and extinction ratio of the structure. We show that using thin metal layers instead of thick ones we can obtain higher extinction ratio of the device.     

Plasmonic modulator based on gain-assisted metal–semiconductor–metal waveguide

We investigate plasmonic modulators with gain material to be implemented as ultra-compact and ultra-fast active nanodevices in photonic integrated circuits. We analyze metal–semiconductor–metal (MSM) waveguides with InGaAsP-based active material layers as ultra-compact plasmonic modulators. The modulation is performed by changing the gain of the core, that results in different transmittance through the waveguides. A MSM waveguide enables high field localization and therefore high modulation speed. Bulk semiconductor, quantum wells and quantum dots, arranged in either horizontal or vertical layout, are considered as the core of the MSM waveguide. Dependences on the waveguide core size and gain values of various active materials are studied. The designs consider also practical aspects like n- and p-doped layers and barriers in order to obtain close to reality results. The effective propagation constants in the MSM waveguides are calculated numerically. Their changes in the switching process are considered as a figure of merit. We show that a MSM waveguide with electrical current control of the gain incorporates compactness and deep modulation along with having a reasonable level of transmittance.     

Liquid–crystal tunable waveguides for integrated plasmonic components

A broad range of liquid–crystal tunable plasmonic waveguides, based on long-range, dielectric-loaded, and channel surface plasmon polaritons, are theoretically designed and investigated. Liquid–crystal switching is rigorously modeled by solving for the coupled elastic/electrostatic problem, whereas the optical studies are conducted via the finite-element method. Extensive tunability of key optical properties, such as modal index, propagation losses, and modal confinement is demonstrated for waveguides of different optical confinement scale. These highly functional waveguiding structures are proposed as building blocks for the design of functional components, e.g. optical attenuators, directional couplers and switches, in integrated plasmonic chips.     

Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal–semiconductor–metal photodetectors

Perovskite photoconductor-type photodetector with metal–semiconductor–metal(MSM) structure is a basic device for photodetection applications. However, the role of electrode interlayer in MSM-type perovskite devices is less investigated compared to that of the pin diode structure. Here, a systematic investigation on the influence of phenyl-C_(61)-butyric acid methyl ester(PCBM) and indene-C_(60) bisadduct(ICBA) interfacial layers for MSM perovskite photodetectors is reported.It is found that the fullerene-based interlayer significantly enhances the photocurrent of the MSM photodetectors. On one hand, the PCBM interlayer is more suitable for CH_3 NH_3 PbI_3 photodetector, with the responsivity two times higher than that of the device with ICBA interlayer. The ICBA layer, on the other hand, becomes more effective when the band gap of perovskite is enlarged with bromine composition, denoted as CH_3 NH_3 Pb(I_(1-x)Br_x)_3(0 ≤ x ≤1). It is further found that the specific detectivity of photodetectors with ICBA interlayer becomes even higher than those with PCBM when the bromine compositional percentage reaches 0.6(x 0.6).     

Corrugated-enhanced second harmonic generation in metal–insulator–metal plasmonic waveguides

Nonlinear effects such as second-harmonic generation (SHG) are important for applications such as switching and wavelength conversion. In this study, the generation of second harmonic in metal–insulator–metal (MIM) plasmonic waveguides was investigated for both symmetric and asymmetric structures. Symmetric means that the metals at the top and bottom of the dielectric layer are the same and asymmetric means that the metals at the top and bottom of the dielectric layer are different. Two different structures are considered here as plasmonic waveguide for generation of second harmonic and analyzed using finite-difference time domain method. Besides the structure has grating on both sides for more coupling between photons and plasmons. The wavelength duration of grating per length unit (number of grooves) will be optimized to reach the highest second harmonic generation. To perform this optimization, the wavelength of operation λ = 458 nm is considered. It was shown that field enhancement in symmetric MIM waveguides can result in enhancement of SHG magnitude compared to the literature values and asymmetric device results in more than two orders of magnitude enhancement in SHG compared to symmetric structure. It is also shown that the electric field of second harmonic depends on the thickness of crystal (insulator). So, its thickness is optimized to achieve the highest electric field.     

Improved amplitude–frequency characteristics for T-splitter photonic crystal waveguides in terahertz regime

Based on the plane-wave expansion method, we calculate TE/TM gaps of 2-D photonic crystals (PCs) with typical square lattices composed of the silicon rods in air. Using the finite-difference time-domain method, we simulate the electromagnetic field distribution of THz waves in photonic crystals T-splitters. By the improved T-splitter with a rod in the junction, we achieved the amplitude–frequency characteristics of a pass band of 84% from 1.12 to 1.22 THz and surpassed by 76% the amplitude consistency of common T-splitters. And using the finite-difference time-domain method, we demonstrated that the improved T-splitter excels a common T-splitter in the degree of separation between the two output ports. These results provide a useful guide and a theoretical basis for the developments of THz functional components.     

Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures

This paper presents the fabrication and characterization of Al/PVA:n-CdS (MS) and Al/Al₂O₃/PVA:n-CdS (MIS) diode. The effects of interfacial insulator layer, interface states (N _ss ) and series resistance (R _s ) on the electrical characteristics of Al/PVA:n-CdS structures have been investigated using forward and reverse bias I–V, C–V, and G/w–V characteristics at room temperature. Al/PVA:n-CdS diode is fabricated with and without insulator Al₂O₃ layer to explain the effect of insulator layer on main electrical parameters. The values of the ideality factor (n), series resistance (R _s ) and barrier height (? _b ) are calculated from ln(I) vs. V plots, by the Cheung and Norde methods. The energy density distribution profile of the interface states is obtained from the forward bias I–V data by taking into account the bias dependence ideality factor (n(V)) and effective barrier height (? _e ) for MS and MIS diode. The N _ss values increase from mid-gap energy of CdS to the bottom of the conductance band edge for both MS and MIS diode.     

New design of triplexer based on metal–insulator–metal plasmonic ring resonators

In this work, we propose a new design of all-optical triplexer based on of metal–insulator–metal（MIM） plasmonic waveguide structures and ring resonators. By adjusting the radii of ring resonators and the gap distance, certain wavelengths can be filtered out and the crosstalk of each channel can also be reduced. The numerical results show that the proposed MIM plasmonic waveguide structure can really function as an optical triplexer with respect to the three wavelengths, that is, 1310, 1490, and 1550 nm, respectively. It can be widely used as the fiber access network element for multiplexer–demultiplexer wavelength selective in fiber-to-the-home communication systems with transmission efficiency higher than 90%. It can also be a potential key component in the applications of the biosensing systems.     

Reflective plasmonic waveplates based on metal–insulator–metal subwavelength rectangular annular arrays

We propose and present a quarter-wave plate using metal–insulator–metal (MIM) structure with sub-wavelength rectangular annular arrays (RAA) patterned in the upper Au film. It is found that by manipulating asymmetric width of the annular gaps along two orthogonal directions, the reflected amplitude and phase of the two orthogonal components can be well controlled via the RAA metasurface tuned by the MIM cavity effect, in which the localized surface plasmon resonance dip can be flattened with the cavity length. A quarter-wave plate has been realized through an optimized design at 1.55 μm, in which the phase difference variation of less than 2% of the π/2 between the two orthogonal components can be obtained in an ultra-wide wavelength range of about 130 nm, and the reflectivity is up to ∼90% within the whole working wavelength band. It provides a great potential for applications in advanced nanophotonic devices and integrated photonic systems.     

Si–LiNbO3–air–metal structure for concentrated terahertz emission from ultrashort laser pulses

A planar Si–LiNbO₃–air–metal structure is proposed as a further development of the highly efficient optical-to-terahertz conversion scheme in sandwich structures that was recently demonstrated. The new structure allows one to collect the terahertz emission into one spatial direction and to control its spectrum by varying an air gap between the metal substrate and the LiNbO₃ layer. While the overall increase in the terahertz generation can reach a factor of 2, the spectral density in the interesting for practical application interval 0.5–1.5 THz can be increased by a factor of 3.5–4.     

Optical switch effect of metal–dielectric–metal plasmonic waveguide coupled with stub structure

The transmission line theory (TLT) and the finite difference time domain (FDTD) method are applied to investigate the optical transmission characteristics of the metal–dielectric–metal (MDM) plasmonic waveguide coupled with a stub structure. The transmission rate of the FDTD simulation results demonstrates periodically variation from less than 1% to more than 92% as a function of the length of the stub, which fits well with the results of TLT. Furthermore, the transmission also performs a periodically switch distribution with the change of the refractive index of the stub from 1.0 to 2.0 gradually. Both methods are adopted for modulating the superposition phase of the interference between the reflected surface plasmon polaritons (SPPs) wave from the end of the stub and the passing SPPs wave in the waveguide, which can be interpreted as the principle mechanism for the optical switch effect of the MDM waveguide with a stub structure.     

A wire-form emitter metal–insulator–semiconductor tunnel junction

Physical effects arising due to change of configuration of a MIS system from planar to cylindrical, are theoretically analyzed. Attention is paid to the voltage partitioning and all the components of tunneling current. A simple simulation model is developed enabling prediction of the band diagram details and calculation of the currents. The trends expected with decreasing system radius are elucidated. Cylindrical geometry can be faced with when quantum wire is used as an electron emitter. Similar form may also be roughly attributed to an edge region of conventional MIS capacitors.     

Hydrogen interaction with GaN metal–insulator–semiconductor diodes

Interaction mechanism of hydrogen with GaN metal–insulator–semiconductor (MIS) diodes is investigated, focusing on the metal/semiconductor interfaces. For MIS Pt-GaN diodes with a SiO₂ dielectric, the current–voltage (I–V) characteristics reveal that hydrogen changes the conduction mechanisms from Fowler–Nordheim tunneling to Poole–Frenkel emission. In sharp contrast, Pt-Si_xN_y-GaN diodes exhibit Poole–Frenkel emission in nitrogen and do not show any change in the conduction mechanism upon exposure to hydrogen. The capacitance–voltage (C–V) study suggests that the work function change of the Schottky metal is not responsible mechanism for the hydrogen sensitivity.     

Quantized longitudinal exciton-polaritons in periodic metal–semiconductor nanostructures

We theoretically investigate the optical properties of one-dimensional photonic crystals composed of two alternating layers, namely a semiconductor film and a metallic one. The nonlocal optical response of the semiconductor is here described by using a resonant excitonic dielectric function, whereas the local response function of the metal film is modeled with Drude formula. We calculate optical spectra of the metal–semiconductor 1D photonic crystal for both s- and p-polarization geometries. In both cases the spectra exhibit a rich resonance structure due to the coupling of size-quantized excitons inside the semiconductor film with light. We show the difference between s- and p-polarization reflectivity as the angle of incidence is increased. In the p-polarization geometry, besides transverse exciton-polariton modes, longitudinal polarization waves are excited producing additional spectral resonances. The spectra become radically different when the frequency corresponding to the minimum of the first photonic pass-band is close to the exciton resonance, since such a frequency is distinct for s- and p-polarized modes. We also show how reflectivity spectra for both polarizations are modified with varying the metal filling fraction which controls the width of the gap below the lowest frequency band.     

Ultra compact hybrid plasmonic–photonic coupler: configuration of metal–silica–silicon

In this work, a novel and practical configuration as a hybrid plasmonic–photonic coupler based on silicon (Si) nanofibers, silica waveguides and metal nanoparticles is examined and investigated. All of utilized waveguides, fibers and nanoparticles are embedded in an \(\hbox {Mg}_{2}\hbox {F}\) crystal host. Integrated plasmonic–photonic coupler provides significant transmission efficiency during guiding and propagating of light. Utilizing enhanced plasmonic waveguides helps to reduce the inherent losses such as scattering into the far-field and absorption of optical power inside the employed components, especially in nanoparticles. The transmission loss component under transverse electric excitation (TE) for the superstructure has been calculated as approximately \(\gamma _{T}=3\,\hbox {dB}/675\)  nm. Also, we investigate the coupling efficiency at overlapping regions between Si nanofibers and silica ( \(\hbox {SiO}_{2})\) waveguides which is referred to near-field interactions. Transmitted power ratio and the group velocity of the propagated light are computed and depicted for the proposed coupler.     

Pressure-induced semiconductor–metal phase transition in Mg2Si

In situ electrical resistivity measurement of powdered Mg₂Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg₂Si underwent a pressure-induced semiconductor–metal phase transition that took place in the Ni₂In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.     

Tunable plasmonic filter with circular metal–insulator– metal ring resonator containing double narrow gaps

Tunable filter based on two metal–insulator–metal (MIM) waveguides coupled to each other by a ring resonator with double narrow gaps is designed and numerically investigated by finite-difference time-domain (FDTD) simulations. The propagating modes of surface plasmon polaritons (SPPs) are studied. By introducing narrow gaps in ring resonators, the transmission in different resonance modes can be effectively adjusted by changing the gap width (g), and the transmitted peak wavelength has a nonlinear relationship with g. Another structure consisting two cascading ring resonators and regular MIM waveguide have also been proposed. The mechanism based on circular ring resonators with narrow gaps may provide a novel method for designing all-optical integrated components in optical communication and computing.