Defect and electrical properties of nanocrystalline tungsten trioxide

Nanocrystalline tungsten trioxide particles were prepared by a wet-chemical method. Transmission electron microscope (TEM) analysis shows that the average grain size is about 15nm. The oxygen deficiency of nanometre-sized sample is higher than that of ordinary tungsten trioxide. The electric conductivity increases because of high oxygen deficiency. Ironic relaxation polarization and crystallographic shear (CS) planes theory were used to explain the unusual dielectric characteristic of nanocrystalline tungsten trioxide.     

Ferroelectric and optical properties of ‘Ba-doped’ new double perovskites

Solid solution of Pb_1.5Ba_0.5BiNbO₆ ceramic is explored here to obtain its ferroelectric and optical properties. The polycrystalline sample was prepared by a standard solid state reaction route. Room temperature XRD and FTIR spectra of the compound exhibit an appreciable change in its crystal structure of Pb₂BiNbO₆ on addition of ‘Ba’ in A site. The surface morphology of the gold-plated sintered pellet sample recorded by SEM exhibits a uniform distribution of small grains with well-defined grain boundaries. Detailed studies on the nature of polarization and variation of dielectric constant, tangent loss with temperature as well as frequency indicate the existence of Ferro-electricity in the sample. Using UV-Vis spectroscopy, the optical band gap of the studied sample has been estimated as 2.1 eV, which is useful for photo catalytic devices. Photoluminescence analysis of the powder sample shows a strong red photoluminescence with blue excitation, which is basically useful for LED.     

Structural,electrical and magnetic properties of Zr–Mg cobalt ferrite

Spinel cobalt ferrite, CoFe_2−xM_xO₄ has been synthesized by substitution of the combination of metallic elements M=Zr–Mg by the microemulsion method using polyethylene glycol as a surfactant. Powder X-ray diffraction analysis reveals that the substitution results in shrinkage of the unit cell of cobalt ferrite due to higher binding energy of the synthesized samples. The energy-dispersive X-ray fluorescence analysis confirms the stoichiometric ratios of the elements present. The thermogravimetric analysis shows that the minimum temperature required for the synthesis of these substituted compounds is 700 °C. A two-point probe method was employed for the measurement of the electrical resistivity in a temperature range of 293±5 to 673±5 K. It appears that there is a decrease in the number of Fe²⁺/Fe³⁺ pairs at the octahedral sites due to the substitution and corresponding migration of some of the Fe³⁺ ions to tetrahedral sites, consequently increasing the resistivity and the activation energy of hopping of electron at the octahedral sites. The susceptibility data also suggest migration of Fe³⁺ to tetrahedral site in the initial stage, which results in an increase in A–B interactions leading to large increase in the blocking temperature (T_B) as observed in samples having dopant content x=0.1.     

Structural,electrical and optical properties of sol–gel AZO thin films

Transparent conductive Al-doped zinc oxide (AZO) thin films were prepared by a sol–gel method and their structural, electrical and optical properties were systematically investigated. A minimum resistivity of 4.2 × 10⁻³ Ω cm was obtained for the 650 °C-annealed films doped with 1.0 at.% Al. All films had the preferential c-axis oriented texture according to the X-ray diffraction (XRD) results. Optical transmittance spectra of the films showed a high transmittance of over 85% in the visible region and the optical band gap of the AZO films broadened with increasing doping concentration.     

Correlation study of structural,electrical and mechanical properties of quenched tin–zinc–cadmium solder alloys

It is important, for electronic application, to decrease the melting point of SnZn₉ solder alloy because it is too high as compared with the most popular eutectic Pb–Sn solder alloy. Adding Cd causes structural changes such as phase transformations, dissolution of atoms and formation of Cd crystals in the quenched SnZn₉ alloy, and its physical properties are affected by this change. For example, the melting point is decreased towards the melting point of the Pb–Sn eutectic alloy, or even much less. The structure, electrical and mechanical properties of quenched Sn_{91? x} Zn₉Cd _x (x?=?0 or x?≥?5) alloys have been investigated. Adding Cd to a quenched SnZn₉ alloy increases its electrical resistivity and decreases its elastic modulus and internal friction. The Sn₇₁Zn₉Cd₂₀ alloy has the lowest melting point (162 °C) and electrical and internal frictions as compared with commercial Pb–Sn solder alloys.     

Structural and electrical properties of Ga–Te systems under high pressure

First-principles evolutionary calculation was performed to search for all probable stable Ga–Te compounds at extreme pressure. In addition to the well-known structures of P6_3/mmc and Fm-3 m Ga Te and I4/m Ga_2 Te_5, several new structures were uncovered at high pressure, namely, orthorhombic I4/mmm GaTe_2 and monoclinic C2/m Ga Te_3, and all the Ga–Te structures stabilize up to a maximum pressure of 80 GPa. The calculation of the electronic energy band indicated that the high-pressure phases of the Ga–Te system are metallic, whereas the low-pressure phases are semiconductors. The electronic localization functions(ELFs) of the Ga–Te system were also calculated to explore the bond characteristics. The results showed that a covalent bond is formed at low pressure, however, this bond disappears at high pressure, and an ionic bond is formed at extreme pressure.     

Correlation between photographic and electrical properties of the polymer–semiconductor–salt of metal photosensitive composition

In the current paper experimental data about changes in the electrical properties (relative permittivity) of the PVA–ZnO–BiCl₃ photosensitive composition under UV radiation are presented. Also the correlation between dielectric constant and density of optical blackening are investigated.     

Contribution from structural Jahn–Teller ions to the elastic and ferroelectric properties of lithium niobate and lithium tantalate

Elastic and ferroelectric characteristics of single crystals of lithium niobate and tantalate are investigated in a wide range of temperatures by complex acoustooptic means. The contribution from Jahn–Teller NbO₆ and TaO₆ systems to the characteristics of elastic moduli, ultrasonic attenuation, and nonlinear optical coefficients is analyzed using a new phenomenological model. It is hypothesized that the displacement of Nb⁵⁺ and Ta⁵⁺ ions, which exhibit the second-order Jahn–Teller effect along trigonal axis C, and the subsequent ordering of octahedral, result in unusual elastic and ferroelectric properties.     

Phase formation and electrical properties of BNLT–BZT lead-free piezoelectric ceramic system

Phase formation study in lead-free piezoelectric ceramics based on lanthanum doped bismuth sodium titanate (Bi_0.4871Na_0.4871La_0.0172TiO₃:BNLT) and zirconium doped barium titanate (BaZr_0.05Ti_0.95O₃:BZT), has been carried out in the system of (1−x)BNLT–xBZT where x = 0.0–1.0, by two-step mixed oxide method. It was observed that the addition of BZT in the BNLT ceramics developed the dielectric and piezoelectric properties of the ceramics with the optimum piezoelectric constant (d₃₃) and dielectric constant (ε_r) at room temperature of about 138 pC/N and 1651, respectively, from the 0.2 BNLT to 0.8 BZT ceramic sample. The Curie temperature (T_C) of this ceramic was found at 295 °C which is 195 °C higher than that of pure BZT ceramics, promising the use of this ceramic in a higher range of temperature.     

Effect of B2O3 on the structure and properties of tungsten–tellurite glasses

The elastic properties and Debye temperatures of xB₂O₃–70TeO₂–(30–x)WO₃, (0 ≤ x ≤ 30 mol%) glasses have been investigated using sound velocity measurements at 4 MHz. Ultrasonic and thermal parameters, combined with the results of IR spectroscopic analyses, were employed to explore the effect of B₂O₃ on the structure of tungsten–tellurite glasses. According to IR analysis, there is competition between WO₆ and TeO₄ units to form BO₄ units, and the vibrations of the tellurite structural units are shifted towards lower wavenumbers on the formation of non-bridging oxygens. It is assumed that B₂O₃ acts as a modifier by decreasing the glass-transition temperature T _g and increasing both the thermal stability and glass formation range of the tellurite glasses. The change in density and molar volume with B₂O₃ content reveals that the borate units are less dense than the tellurite structural units. The observed compositional dependence of elastic moduli is interpreted in terms of the effect of B₂O₃ on the coordination number of the tellurite units. A good correlation was observed between experimentally determined elastic moduli and those computed with the Makishima–Mackenzie model.     

Study of electrical and thermoelecrical properties of sulfides Tm x Mn1–x S

Variable-valence Tm _x Mn_1–x S (0 ? x ? 0.15) compounds have been synthesized and their structural, electrical, and thermoelectrical properties have been studied in the temperature range of 80–1100 K. The regions of existence of solid solutions of sulfides Tm _x Mn_1–x S with the NaCl-type fcc lattice have been determined. It has been found that, as thulium ions are substituted for manganese cations, the electrical resistivity increases, and the lattice parameter increases more sharply than that corresponding to the Vegard’s law. The study of the temperature dependences of the thermopower coefficient has revealed that the current carrier sign is retained to 500 K for all the substitution concentrations, and the charge carrier type changes from the hole type to the electron type with variations in the temperature. The experimental data have been explained in terms of the exciton model.     

Spectroscopic properties of Nd3+-doped tungsten–tellurite glasses

In this work, we investigate the spectroscopy properties of neodymium doped tungsten–tellurite glasses prepared in ambient and O₂-rich atmospheres. A conversion of TeO₄ to TeO₃ units was caused by the addition of Nd³⁺ into the glass, which was confirmed by absorption spectra and by Judd–Ofelt parameter behavior. The relaxation of the ⁴F_3/2 level is dominated by radiative decay and cross-relaxation between Nd³⁺ and Nd³⁺ ions. The energy transfer from Nd³⁺ to the hydroxyl group is negligible when compared to the cross-relaxation. The luminescence quantum efficiency values of the ⁴F_3/2 level decreases as the Nd³⁺ concentration increases, independently if determined by the Judd–Ofelt method or by the thermal lens technique. The observed reduction in the IR absorption associated to OH groups was not effective to improve the luminescence quantum efficiency.     

Structural,optical and electrical properties of laser irradiated Pb doped Ga–Se chalcogenide thin films

Using the Transverse Electrical Excitation at Atmospheric Pressure (TEA) nitrogen laser, we had irradiated the amorphous thin films of Ga₁₀Se₈₁Pb₉ chalcogenide glass and the results have been discussed in terms of the structural aspects of Ga₁₀Se₈₁Pb₉ glass. The observed changes are associated with the interaction of the incident photon and the lone-pairs electrons which affects the band gap. The X-ray structural characterization revealed the amorphous nature of as prepared films and polycrystalline nature of the laser irradiated films. The optical band gap of these thin films is measured by using the absorption spectra as a function of photon energy in the wavelength region 400–1200 nm. It is found that the optical band gap decreases while the absorption coefficient increases with increasing the irradiation time. The decrease in the optical band gap has been explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase in exposure time. The dc conductivities and activation energies of these thin films are measured in temperature range 303–403 K. It has been found that the activation energy in Ga₁₀Se₈₁Pb₉ chalcogenide thin films decreases whereas the dc conductivity increases at each temperature by increasing the irradiation time.     

Synthesis,characterization and mesomorphic properties of new liquid-crystalline compounds involving ester–chalcone linkages

We report the synthesis and evaluation of thermal behaviour of two novel series of chalcone-based liquid-crystalline compounds. The flexibility in these systems is provided by attaching straight alkoxy chain at one end. All the mesogens have been characterized by spectroscopic methods such as ¹H-NMR, FTIR, mass spectra, UV/Vis, and also elemental analysis. Their thermal behaviour was evaluated mainly by polarizing optical microscopic observation and DSC studies. It has been observed that the majority of the compounds display nematic and/or smectic mesophases. In both the series, compounds having C₃ to C₇ tail display only enantiotropic nematic phase, whereas C₈ and C₁₀ homologues exhibit enantiotropic smectic C and nematic phases. The higher homologues with C₁₂, C₁₄ and C₁₆ tails show the smectic C phase only.     

Effect of composition and light intensity on the electrical properties of Sn–Sb–Se glassy films

Electrical and photoelectrical measurements have been performed on Sn_xSb₂₀Se_70-x (8≤x≤16) glassy films. The dc activation energy, optical gap and photoconduction parameters show a typical variation near x=10 composition indicating the occurrence of a rigidity percolation threshold in the present system. The photosensitivity increases with the increase in Sn content up to x=14 and an abrupt decrease for x=16 composition. Negative photoconductivity region have been observed in the higher temperature side for samples with x=10 and 16. This system belongs to the type II category of photoconductors. The results are explained on the basis of a change in the density of localized states present in the mobility gap with the change in the composition. PACS 71.20.Nr; 72.20.-I; 78.66.Jg; 81.05.Gc; 73.50.Pz