Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermionic-field emission resulted in the following parameters: characteristic energy E₀₀ = 9.8 meV, Schottky barrier height at zero bias Φ_b0 = 0.802 eV, bias coefficient of barrier height β = 0, and effective Richardson constant A* = 37.32 A cm⁻² K⁻².     

An investigation of electrophysical characteristics of organic semiconductor films

The presence of a p-n-transition at the aniline film-aqueous solution of organic fuchsin semiconductor interface is studied. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 80–83, June, 2007.     

Temperature characteristics of magnetoelectric interaction in langatate-ferromagnet composite resonators

Magnetoelectric interaction in a layered langatate-hysteretic ferromagnet structure is observed with no bias magnetic field applied. The temperature characteristics of interaction are determined mainly by the properties of the ferromagnetic layer. Raising the temperature weakens the coupling between layers and lowers the efficiency of interaction.     

Structural and electrophysical characteristics of YBCO films on sapphire

We present experimental results for the structural and electrophysical characteristics of YBCO films deposited on sapphire substrates without an interface layer. The films were deposited by laser sputtering of a target. We establish certain relationships between the structural and electrophysical characteristics of the films. We show the films’ electrophysical parameters are determined by the number of "defective" blocks whose [010] axes are at random angles relative to the [100] axis of the substrate. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk University. Translated from Izvestiya Vysshikh Uchebnykh Zaved, Fizika, No. 5, pp. 75–78, May, 1998.     

不同类型偶氮材料光致双折射的温度特性研究

在不同温度下,分别测量了掺杂偶氮材料、偶氮聚合物和偶氮液晶聚合物的光致双折射行为,并利用双e指数模型对光致双折射的动力学过程进行了拟合.实验结果表明,偶氮材料的光致双折射源于偶氮分子的光致异构和光致分子取向,光致双折射大小随温度的升高表现出先增大后减小的趋势.在抽运光的作用下,含偶氮材料的光致双折射包含一个由偶氮分子取向引起的快过程和一个由偶氮分子带动大分子取向引起的慢过程.关闭抽运光后,掺杂偶氮材料和偶氮聚合物表现为可逆的弛豫,而偶氮液晶聚合物则展现出长久光存储特性.     

Structural and electronic characteristics of pure and doped ZnO varistors

We report here the structural,surface morphology,mechanical,and current-voltage characteristics of Zn1-xMxO ceramic samples with various x and M(0.00≤x≤0.20,M=Ni,Cu).It is found that the considered dopants do not influence the well-known peaks related to the wurtzite structure of ZnO ceramics,while the shapes and the sizes of grains are clearly affected.The average crystalline diameters deduced from the SEM micrographs are between 2.06 μm and 4.8 μm for all samples.The oxygen element ratio is increased by both dopants.Interestingly,the potential barrier can be formed by adding Cu up to 0.20,while it is completely deformed by 0.025 Ni addition.The breakdown field can be enhanced up to 4138 V/cm by 0.025 Cu addition,followed by a decrease with further increase of Cu up to 0.20.On the other hand,a gradual decrease in Vickers microhardness is reported for both dopants,and the values in the Ni samples are higher compared to those in the Cu samples.The electrical conductivity is generally improved by Ni,while the addition of Cu improves it only in the over doped region(≥0.10).These results are discussed in terms of the differences of valency and ferromagnetic ordering.     

Photoelectric and electrophysical characteristics of In2S3-SiOx-Si Structures

Results are presented of the investigation of the effect of two oxidation methods of silicon (chemical and anodic) on the electrophysical properties of In₂1S₃-SiO_x-Si structures. It is shown that the change in the potential barrier height in silicon and the properties of the interface depend on the oxidation method. In the development of solar energy photoconverters, preference should be given to structures on n-type silicon with chemical oxide.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 3–6, July, 1985.     

Temperature dependent characteristics of submicron GaAs avalanche photodiodes obtained by a nonlocal analysis

In this paper, using a nonlocal analysis we have extracted the temperature dependent ionization coefficients and threshold energies of submicron GaAs avalanche photodiodes (APDs) with multiplication region thicknesses as narrow as 49 nm, from electron and hole injection photo-multiplication processes. These extracted parameters have been used to predict the temperature dependence of APDs characteristics, such as mean gain, 3 dB-bandwidth, gain-bandwidth product, excess noise factor, performance factor, and breakdown field, over a temperature range of 20 K to 290 K. In the nonlocal analysis we have taken the effects of nonuniform electric filed within the multiplication region and its surrounding depletion regions, injected carrier’s initial ionization energy, carrier’s spatial ionization rate as well as the carrier’s dead space and its previous ionization history into account. We have shown that our predicted gain values are in excellent agreement with existing experimental data measured by others.     

Peculiarities of the electrophysical characteristics of platinum silicide-silicon contacts under impulsive overloads

The extremal operating states of the active elements of integrated circuits and discrete devices as well as the different actions on semiconductor devices with a Schottky barrier based on metal silicide-silicon contacts lead to a change in their physical parameters. In this work the effect of impulsive overloads on a formed platinum silicide-silicon contact is studied. It is shown, with the help of analytical expressions for the currents in the superbarrier region and in the region of resonant tunneling charge transfer, that under impulsive action a change occurs in both the transitional layer and in the region of space charge; the change is associated with the increase in the concentration of deep levels in the region of space charge that participate in the resonance tunneling. Estimates of the Joule heating by the current flowing in the structures employed do not exceed 100°C, indicating that defect formation under the impulsive actions is nonthermal.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 70–73, September, 1988.     

Frequency and spatial characteristics of the electrophysical parameters of a living tree trunk

The method of vertical electrical sounding is applied to derive the spatial characteristic of the dc resistivity ρ of a living pine trunk, ρ = L-0.85, and the frequency characteristic of the ac resistance R of the same pine trunk, R = f-0.053. The results are simulated by the methods of fractal geometry, according to which ρ = L ^{−h + 2} and $ R \sim f^{ - \tfrac{3} {h} + 1} $ R \sim f^{ - \tfrac{3} {h} + 1} , where h is the walk dimension of the electric current in the trunk. From comparison between the experimental and theoretical results, it follows that h = 2.85 and fractal dimension D = 1/h = 0.35. Since D = 1, conducting layers form a Cantor set.     

Temperature dependent X-ray observations of TTF-TCNQ

Single crystal X-ray oscillation photographs of the organic solid TTF-TCNQ have been recorded at temperatures above and below the conductivity maximum. No evidence of a multiplicative enlargement of the unit cell in a direction parallel to the conducting chains has been observed.     

Temperature dependent dc and ac electrical transport properties of the composite of a polyaniline nanorod with copper chloride

We have prepared the composite of polyaniline nanorods with copper chloride by chemical oxidative polymerization of aniline. Introduction of copper chloride in polyaniline significantly increases the conductivity of the nanocomposite. Temperature dependence of resistivity for our sample is best fitted with the quasi-one-dimensional hopping model and also the tunneling model. Negative magnetoconductivity is obtained for the samples at room temperature. Temperature variation of ac conductivity can be explained in terms of correlated barrier hopping model. Frequency dependence of the real part of impedance is explained by the Maxwell-Wagner capacitor model. Two activation behaviors are observed from the analysis of grain and grain boundary contributions.     

Simulation of the electrophysical characteristics of a biological tissue with allowance for large-scale inhomogeneities

An electrodynamic model of reflection of a plane wave from a layer simulating a biological structure with a slowly varying thickness is constructed with allowance for roughness in the case when the characteristic size of inhomogeneities on the surface is much larger than the wavelength. The model makes it possible to vary the size of inhomogeneities on the rough surface, the electrophysical parameters of the biological sample under investigation, and the geometrical parameters and to establish the dependences between these parameters and the biological properties of the biotissue being simulated.     

Temperature dependent electron transport in graphene

We have investigated the electron transport in graphene at different carrier densities. Single layer graphene was fabricated into Hall bar shaped devices by mechanical extraction onto a silicon oxide/silicon substrate followed by standard microfabrication techniques. From magnetoresistance and Hall measurements, we measure the carrier density and mobility at different gate voltages. Different temperature dependent resistivity behaviors are found in samples with high and low mobilities.     

Temperature dependent ultrasonic characterization of biological media

Quantitative ultrasound (QUS) is an imaging technique that can be used to quantify tissue microstructure giving rise to scattered ultrasound. Other ultrasonic properties, e.g., sound speed and attenuation, of tissues have been estimated versus temperature elevation and found to have a dependence with temperature. Therefore, it is hypothesized that QUS parameters may be sensitive to changes in tissue microstructure due to temperature elevation. Ultrasonic backscatter experiments were performed on tissue-mimicking phantoms and freshly excised rabbit and beef liver samples. The phantoms were made of agar and contained either mouse mammary carcinoma cells (4T1) or chinese hamster ovary cells (CHO) as scatterers. All scatterers were uniformly distributed spatially at random throughout the phantoms. All the samples were scanned using a 20-MHz single-element f/3 transducer. Quantitative ultrasound parameters were estimated from the samples versus increases in temperature from 37 °C to 50 °C in 1 °C increments. Two QUS parameters were estimated from the backscatter coefficient [effective scatterer diameter (ESD) and effective acoustic concentration (EAC)] using a spherical Gaussian scattering model. Significant increases in ESD and decreases in EAC of 20%-40% were observed in the samples over the range of temperatures examined. The results of this study indicate that QUS parameters are sensitive to changes in temperature.