Correlation between sintering temperature and properties of ZnO ceramic varistors

The effect of sintering temperature on ZnO varistor properties is investigated in the range of 700–1400 °C. The increase of sintering temperature does not influence the well-known peaks related to hexagonal wurtzite structure of ZnO ceramics, whereas the average grain size is increased from (1.08 to 2.1 μm). With increasing sintering temperature up to 1200 °C, the nonlinear region is clearly observed in the I–V characteristics, whereas this region is completely absent only for the sample sintered at 1400 °C. As the sintering temperature increased, the breakdown field decreased over a wide range from 2838.7 to 6.41 V/cm, while the nonlinear coefficient is increased in the range of (23.86–47.76). Furthermore, the barrier height decreased from 1.76 to 0.974 eV, whereas electrical conductivity is improved. On the other hand, the optical band gap is gradually decreased in the range of 3.08–2.70 eV with increasing sintering temperature. These results showed a strong correlation between sintering temperature and the properties of ZnO ceramic varistor.     

Enhanced dielectric and nonohmic properties of SrTiO3-modified CaCu3Ti4O12 ceramics

Dielectric and nonohmic properties of CaCu₃Ti₄O₁₂ (CCTO) ceramics can be modified by addition of SrTiO₃ (STO) in different molar proportions which were fabricated by a modified sol-gel method. XRD results indicated that all modified ceramics showed mixed phase consisting of both CCTO and STO. SEM images and grain size distribution probability also presented the change of microstructure with the addition of STO. The dielectric loss of the CCTO/0.4STO ceramics sintered at 1000 °C can be lower than 0.02 in a wide frequency (1 kHz–10 kHz), especially at 1 kHz, the dielectric loss of this sample is as low as 0.012. Furthermore, excellent nonlinear I–V electrical characteristic (high breakdown voltage to 54.15 kV/cm for CCTO/0.4STO sintered at 1000 °C) was observed as well. All the results indicated that the addition of STO does improve the dielectric properties and nonohmic characteristics of CCTO ceramics dramatically.     

Characteristics of DC discharge in a wire-cylinder configuration at high ambient temperatures

In the present work, the characteristics of direct-current (DC) discharge in a wire-cylinder configuration at an ambient temperature range of 350–850 °C were studied by analyzing photographs of the discharging process and the corresponding V–I characteristics, with the aim of facilitating the application of plasma technology in the fields of energy and the environment. The influences of the ambient temperature, the inter-electrode gap, the gas medium and the cathode material on the DC discharge were investigated. The corona-onset threshold voltage (COTV) and the spark-breakdown threshold voltage (SBTV) decrease as the ambient temperature increases, and the SBTV decreases more rapidly. Increasing the inter-electrode gap enlarges the difference between the SBTV and the COTV. After spark breakdown, in an air atmosphere, glow discharge is more likely to take place under conditions of high ambient temperatures or small inter-electrode gaps. The values of the SBTV in different atmospheres have the following relation: air ≈ O₂ > CO₂. At an ambient temperature range of 350–850 °C and in an atmosphere of N₂, glow discharge and arc discharge occur successively as the output voltage of the power supply is increased, while in an atmosphere of O₂ and CO₂, only corona and arc discharge are successively observed. In an air atmosphere, when the inter-electrode gap is 29 mm, corona, glow and arc discharge occur successively with increasing output voltage when the ambient temperature is 850 °C, while only corona and arc discharge appear when the temperature is 350–750 °C. When the inter-electrode gap is 5 mm in an air atmosphere, corona, glow and arc discharge occur successively in an ambient temperature range of 350–850 °C. The cathode material has a minor influence on the COTV and a more significant influence on the SBTV. In a device using a cathode with a low work function, the SBTV is low, and the power to maintain arc discharge is small.     

Oxygen nonstoichiometry and transport properties of strontium substituted lanthanum cobaltite

Oxygen nonstoichiometry, structure and transport properties of the two compositions (La_0.6Sr_0.4)_0.99CoO_3−δ (LSC40) and La_0.85Sr_0.15CoO_3−δ (LSC15) were measured. It was found that the oxygen nonstoichiometry as a function of the temperature and oxygen partial pressure could be described using the itinerant electron model. The electrical conductivity, σ, of the materials is high (σ > 500 S cm^− 1) in the measured temperature range (650–1000 °C) and oxygen partial pressure range (0.209–10^− 4 atm). At 900 °C the electrical conductivity is 1365 and 1491 S cm^− 1 in air for LSC40 and LSC15, respectively. A linear correlation between the electrical conductivity and the oxygen vacancy concentration was found for both samples. The mobility of the electron-holes was inversely proportional with the absolute temperature indicating a metallic type conductivity for LSC40. Using electrical conductivity relaxation the chemical diffusion coefficient of oxygen was determined. It was found that accurate values of the chemical diffusion coefficient could only be obtained using a sample with a porous surface coating. The porous surface coating increased the surface exchange reaction thereby unmasking the chemical diffusion coefficient. The ionic conductivity deduced from electrical conductivity relaxation was determined to be 0.45 S cm^− 1 and 0.01 S cm^− 1 at 1000 and 650 °C, respectively. The activation energy for the ionic conductivity at a constant vacancy concentration (δ = 0.125) was found to be 0.90 eV.     

Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (1 1 1) diodes

The effect of rapid thermal annealing on the electrical and structural properties of Ni/Au Schottky contacts on n-InP have been investigated by current–voltage (I–V), capacitance–voltage (C–V), auger electron spectroscopy (AES) and X-ray diffraction (XRD) techniques. The Au/Ni/n-InP Schottky contacts are rapid thermally annealed in the temperature range of 200–500 °C for a duration of 1 min. The Schottky barrier height of as-deposited Ni/Au Schottky contact has been found to be 0.50 eV (I–V) and 0.86 eV (C–V), respectively. It has been found that the Schottky barrier height decreased with increasing annealing temperature as compared to as-deposited sample. The barrier height values obtained are 0.43 eV (I–V), 0.72 eV (C–V) for the samples annealed at 200 °C, 0.45 eV (I–V) and 0.73 eV (C–V) for those at 400 °C. Further increase in annealing temperature to 500 °C the barrier height slightly increased to 0.46 eV (I–V) and 0.78 eV (C–V) compared to the values obtained for the samples annealed at 200 °C and 400 °C. AES and XRD studies showed the formation of indium phases at the Ni/Au and InP interface and may be the reason for the increase in barrier height. The AFM results showed that there is no significant degradation in the surface morphology (rms roughness of 1.56 nm) of the contact even after annealing at 500 °C.     

dc and ac characterizations of electrical conducting nanoporous carbon structures based on resorcinol-formaldehyde

Structural, electrical and morphological properties of electrical conducting nanoporous carbon structures, prepared at different pyrolysis temperatures by sol–gel method, were investigated. The effect of the measurement temperature on the electrical properties of the obtained sample pyrolysed at 675 °C was studied. The imaginary and real parts of the sample impedance versus frequency, in the range of 40 Hz–100 MHz, are investigated. The Nyquist diagrams were used to identify an equivalent circuit and the fundamental parameters of the circuit are determined at different temperatures with the aim to study the contributions of the grains and boundary grains to the conductivity.     

Effect of annealing on the electronic parameters of Au/poly(ethylmethacrylate)/n-InP Schottky diode with organic interlayer

A thin poly(ethylmethacrylate) (PEMA) layer is deposited on n-InP as an interlayer for electronic modification of Au/n-InP Schottky structure. The electrical properties of Au/PEMA/n-InP Schottky diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements at different annealing temperatures. Experimental results show that Au/PEMA/n-InP structure exhibit a good rectifying behavior. An effective barrier height as high as 0.83 eV (I–V) and 1.09 eV (C–V) is achieved for the Au/PEMA/n-InP Schottky structure after annealing at 150 °C compared to the as-deposited and annealed at 100 and 200 °C. Modified Norde's functions and Cheung method are also employed to calculate the barrier height, series resistance and ideality factors. Results show that the barrier height increases upon annealing at 150 °C and then slightly decreases after annealing at 200 °C. The PEMA layer increases the effective barrier height of the structure as this layer creates a physical barrier between the Au metal and the n-InP. Terman's method is used to determine the interface state density and it is found to be 5.141 × 10¹² and 4.660 × 10¹² cm^?2 eV^?1 for the as-deposited and 200 °C annealed Au/PEMA/n-InP Schottky diodes. Finally, it is observed that the Schottky diode parameters change with increasing annealing temperature.     

Transport properties of the Pr2−xSrxNiO4±δ ceramics with x = 0.3 and 0.6

As potential cathode materials Pr_2−xSr_xNiO_4±δ compositions with x = 0.3 and 0.6 were prepared at 1300 °C in air and their electrical conductivity and oxygen non-stoichiometry were investigated in the temperature range 20–1000 °C and oxygen partial pressure (pO₂) 1–21,000 Pa. Sr-doping allows partially to stabilize the Pr₂NiO_4±δ structure, but some phase transitions were observed in spite of that. The electrical conductivity and the oxygen mobility of the Pr- and La-containing ceramic nickelates with K₂NiF₄- type structure are 10–15% higher for Pr_2−xSr_xNiO_4−δ compounds at the same temperature and oxygen partial pressure.     

On the use of NiO as sintering additive for BaCe0,9Y0,1O3 − α

The effect of nickel oxide addition on the densification behaviour and electrical conductivity of BaCe_0.9Y_0.1O_3 ? α (BCY10) is investigated. Small addition (4 mol%) of this sintering aid reduces the sintering temperature by 200 °C and promotes the densification. 95% of the theoretical density was reached after sintering at 1250 °C for 10 h in air. Addition of NiO has no detrimental effect on the total conductivity of BCY10 in wet hydrogen. Nevertheless, the activation energy of the recorded blocking effect is higher than that of the bulk contribution, indicating different electrical properties between grains and internal interfaces in pure and NiO doped BCY10.     

The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30 °C to 100 °C. The current-dependent electroluminescence (EL) spectra, current–voltage (I–V) curves and luminescence intensity–current (L–I) characteristics of green InGaN/GaN MQW LEDs have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW LEDs. The experimental results show that both the forward voltages decreased with a slope of ?3.7 mV/K and the emission peak wavelength increased with a slope of +0.02 nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the existence of a band gap shrinkage effect. The junction temperature estimated from the forward voltage and the emission peak shift varied from 25.6 to 14.5 °C and from 22.4 to 35.6 °C, respectively. At the same time, the carrier temperature decreased from 371.2 to 348.1 °C as estimated from the slope of high-energy side of the emission spectra. With increasing injection current, there was found to be a strong current-dependent blueshift of ?0.15 nm/mA in the emission peak wavelength of the EL spectra. This could be attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect that resulted from the piezoelectric polarization and spontaneous polarization in InGaN/GaN heterostructures. We also demonstrate a helpful and easy way to measure and calculate the junction temperature of InGaN/GaN MQW LEDs.     

Temperature-dependent current conduction mechanism and charge trapping in Ta2O5 RF-sputtered on GaN

A gallium nitride (GaN) based Metal-Oxide-Semiconductor (MOS) capacitor was fabricated using radio frequency (RF)-sputtered tantalum oxide (Ta₂O₅) as the high-k gate dielectric. Electrical characteristics of this capacitor were evaluated via capacitance–voltage (C–V), current–voltage (I–V), and interface trap density (D_it) measurements with emphasis on the substrate temperature dependence ranging from 25 °C to 200 °C. Charge trapping and conduction mechanism in Ta₂O₅ were investigated. The experimental results suggested that higher substrate temperature rendered higher oxide capacitance, reduced gate leakage current, and lowered mid-gap interface trap density at the expenses of high border traps and high fixed oxide charges. The gate leakage current through Ta₂O₅ was found to obey the Ohm's conduction at lower gate bias and the Poole–Frenkel conduction at higher gate bias.     

Influence of sintering conditions on the electrical properties of 10% ZrO2–10% Y2O3–CeO2 (mol%)

Yttria–zirconia doped ceria, 10% ZrO₂–10% Y₂O₃–CeO₂ (mol%) (CZY) and 0.5 mol% alumina-doped CZY (CZYA), prepared through oxide mixture process, were sintered by isothermal sintering (IS) and two-step sintering (TSS) having as variable the temperature and soaking time. The electrical conductivity of sintered samples was investigated in the 250 to 600 °C temperature range by impedance spectroscopy in air atmosphere. The microstructure was analyzed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Alumina, as additive, improves the grain boundary conductivity of samples sintered at temperatures lower than 1500 °C. Concerning the sintering mode, two-step sintering (TSS) proved to be a good procedure to obtain CZYA samples with high electrical conductivity and density (> 95%) at relatively low sintering temperature and long soaking time.     

The effect of alumina and Cu addition on the electrical properties and the SOFC performance of Gd-doped CeO2 electrolyte

Alumina and transition metals were added to Gd-doped ceria and the electrical properties of doped ceria were studied. For 10 mol% Gd-doped ceria (GDC), 1 at.% transition metals (Fe, Co, Ni, Cu, or Ga) were added as a sintering aid and 1, 2, 5, 10, and 20 at.% alumina was added as a possible strengthening media. The electrical conductivity was measured as a function of temperature (250–700 °C) in air. The open circuit voltage (OCV) and the impedance spectra of the cell in dual atmosphere (air on one side, hydrogen on another side) were measured as a function of time. Samples added with both 1 at.% Cu and 2 at.% alumina showed good sinterability without much loss of electrical conductivity. The time-dependence of the OCV value and the impedance spectra showed that either the alumina-added or the Cu and alumina co-added sample exhibited the slower degradation of OCV and the less electrode polarization than GDC. The results indicate that Cu and alumina addition improved the stability of the cell.     

Ionic conductivity of Ce1−xNdxO2−x / 2

The electrical conductivity of sintered samples of Ce_1−xNd_xO_2−x / 2 (0.01 ≤ x ≤ 0.2) was investigated in air as a function of temperature between 150 and 600 °C using AC impedance spectroscopy. The individual contribution of the bulk and grain boundary conductivities has been discussed in detail. In the low temperature range (< 350 °C), the activation enthalpy for bulk conductivity exhibited a shallow minimum at 3 mol% Nd, with a value of 0.68 eV. The activation enthalpy also produced a shallow minimum at 5 mol% Nd in the high temperature range (> 350 °C), with a value of 0.56 eV. It was shown that Ce_1−xNd_xO_2−x / 2 is an electrolyte that obeys the Meyer Neldel rule. The bulk conductivity data measured by others for the same system has also been recalculated and re-evaluated to facilitate easier comparison with our own data.     

Pulsed laser deposition of high temperature protonic films

Pulsed laser deposition has been used to fabricate nanostructured BaCe_0.85Y_0.15O_3−δ films. Protonic conduction of the fabricated BaCe_0.85Y_0.15O_3−δ films was compared to the sintered BaCe_0.85Y_0.15O_3−δ. Sintered samples and laser targets were prepared by sintering BaCe_0.85Y_0.15O_3−δ powders derived by solid state synthesis. Films 1 to 8 μm thick were deposited by KrF excimer laser on porous Al₂O₃ substrates. Thin films were fabricated at deposition temperatures of 700 to 950 °C at O₂ pressures up to 200 mTorr using laser pulse energy densities of 1.4–3 J/cm². Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe_0.85Y_0.15O_3−δ films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 to 900 °C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 °C; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied from 115 to 54 kJ. Film microstructure was attributed to the difference in electrical conductivity of the BaCe_0.85Y_0.15O_3−δ films.     

DC conductivity and dielectric properties of maize starch/methylcellulose blend films

The transient current, electrical conductivity, dielectric constant (ε′), and dielectric loss factor (ε″) of starch and methylcellulose homopolymers and their blends with various compositions were studied under different conditions. The x-ray diffraction pattern was obtained for individual polymers and 50:50 wt/wt% blend sample to identify both the structure and degree of crystallinity. From transient current, the ionic and electronic transfer number as well as charge carrier density and drift mobility were determined. The values of activation energy in the temperature range 30–90 °C indicate that the conduction mechanism is due to combined electronic and ionic processes, while in the temperature range 100–160 °C, electronic contribution is predominant. The complex dielectric data of the present samples in an extended frequency and temperature range appear as different relaxation processes, which are connected with polymer dynamics.     

Study on dielectric surface discharge in transformer oil under high voltage nanosecond pulse

Electrical equipments are always subjected to different operating conditions and voltage waves which cause electrical failure on the surface and in the bulk of dielectrics. In this paper, experiments have been carried out to study main factors that influence the characteristic of dielectric surface discharge in transformer oil. Experimental study on flashover of nylon 6 and polymethyl methacrylate (PMMA) under applied voltage ranged from 50 to 250 kV shows that the flashover voltage U is influenced by the insulation structure, rise velocity and pulse width of the applied voltage. Flashover electrical field value E in pulse with rise time less than 10 ns is higher than that in DC and AC voltages. When angle between electrode and the sample is about 45°, nylon 6 and PMMA show the best flashover performance. From these results, the influence of the secondary electron emission and space charges on the electrical breakdown of dielectrics has been stressed.     

Thermal and electrical conductivities of silver–indium–tin alloys

The variations of thermal conductivity with temperature for the Ag–[x] wt% Sn–20 wt% In alloys (x=8, 15, 35, 55 and 70) were measured using a radial heat flow apparatus. From the graphs of thermal conductivity versus temperature, the thermal conductivities of solid phases at their melting temperature for the Ag–[x] wt% Sn–20 wt% In alloys (x=8, 15, 35, 55 and 70) were found to be 46.9±3.3, 53.8±3.8, 61.2±4.3, 65.1±4.6 and 68.1±4.8 W/Km, respectively. The variations of electrical conductivity of solid phases versus temperature for the same alloys were determined from the Wiedemann–Franz equation using the measured values of thermal conductivity. From the graphs of electrical conductivity versus temperature, the electrical conductivities of the solid phases at their melting temperatures for the Ag–[x] wt% Sn–20 wt% In alloys (x=8, 15, 35, 55 and 70) alloys were obtained to be 0.036, 0.043, 0.045, 0.046 and 0.053 (×10⁸/Ωm), respectively. Dependencies of the thermal and electrical conductivities on the composition of Sn in the Ag–Sn–In alloys were also investigated. According to present experimental results, the thermal and electrical conductivities for the Ag–[x] wt% Sn–20 wt% In alloys linearly decrease with increasing the temperature and increase with increasing the composition of Sn.     

Impedance spectroscopy and conduction mechanism of multiferroic (Bi0.6K0.4)(Fe0.6Nb0.4)O3

Polycrystalline (Bi_0.6K_0.4) (Fe_0.6Nb_0.4)O₃ material has been prepared using a mixed-oxide route at 950 °C. It was shown by XRD that at room temperature structure of the compound is of single-phase with hexagonal symmetry. Some electrical characteristics (impedance, modulus, conductivity etc.) were studied over a wide frequency (1 kHz–1 MHz) and temperature (25–500 °C) ranges. The Nyquist plot (i.e., imaginary vs real component of complex impedance) of the material exhibit the existence and magnitude of grain interior and grain boundary contributions in the complex electrical parameters of the material depending on frequency, input energy and temperature. The nature of frequency dependence of ac conductivity follows Joncher׳s power law, and dc conductivity follows the Arrhenius behavior. The appearance of P–E hysteresis loop confirms the ferroelectric properties of the material with remnant polarization (2P_r) of 1.027 µC/cm² and coercive field (2E_c) of 16.633 kV/cm. The material shows very weak ferromagnetism at room temperature with remnant magnetization (2M_r) of 0.035 emu/gm and coercive field (2H_c) of 0.211 kOe.     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.